Freescale MR0A16ACTS35C 256k x 16-bit 3.3-v asynchronous magnetoresistive ram Datasheet

Freescale Semiconductor
Data Sheet
Document Number: MR2A16A
Rev. 4, 6/2007
256K x 16-Bit 3.3-V
Asynchronous
Magnetoresistive RAM
Introduction
The MR2A16A is a 4,194,304-bit magnetoresistive
random access memory (MRAM) device
organized as 262,144 words of 16 bits. The
MR2A16A is equipped with chip enable (E), write
enable (W), and output enable (G) pins, allowing
for significant system design flexibility without bus
contention. Because the MR2A16A has separate
byte-enable controls (LB and UB), individual bytes
can be written and read.
MRAM is a nonvolatile memory technology that
protects data in the event of power loss and does
not require periodic refreshing. The MR2A16A is
the ideal memory solution for applications that
must permanently store and retrieve critical data
quickly.
The MR2A16A is available in a 400-mil, 44-lead
plastic small-outline TSOP type-II package with an
industry-standard center power and ground SRAM
pinout.
MR2A16A
44-TSOP
Case 924A-02
Features
•
Single 3.3-V power supply
•
Commercial temperature range (0˚C to
70˚C), Industrial temperature range (-40˚C
to 85˚C) and Extended temperature range
(-40˚C to 105˚C)
•
Symmetrical high-speed read and write with
fast access time (35 ns)
•
Flexible data bus control — 8 bit or 16 bit
access
•
Equal address and chip-enable access
times
•
Automatic data protection with low-voltage
inhibit circuitry to prevent writes on power
loss
•
All inputs and outputs are
transistor-transistor logic (TTL) compatible
•
Fully static operation
•
Full nonvolatile operation with 20 years
minimum data retention
The MR2A16A is available in Commercial (0˚C to
70˚C), Industrial (-40˚C to 85˚C) and Extended
(-40˚C to 105˚C) ambient temperature ranges.
© Freescale Semiconductor, Inc., 2004, 2006, 2007. All rights reserved.
Device Pin Assignment
OUTPUT
ENABLE
BUFFER
G
UPPER BYTE OUTPUT ENABLE
LOWER BYTE OUTPUT ENABLE
8
A[17:0] ADDRESS
BUFFERS
18
10
ROW
DECODER
COLUMN
DECODER
CHIP
ENABLE
BUFFER
E
UB
SENSE
AMPS
8
LOWER
BYTE
OUTPUT
BUFFER
256K x 16
BIT
MEMORY
ARRAY
16
UB
8
FINAL
WRITE
DRIVERS
8
UPPER BYTE WRITE ENABLE
BYTE
ENABLE
BUFFER LB
LB
8
16
WRITE
ENABLE
BUFFER
W
UPPER
BYTE
OUTPUT
BUFFER
8
8
UPPER
BYTE
WRITE
DRIVER
8
LOWER
BYTE
WRITE
DRIVER
DQU[15:8]
8
DQL[7:0]
LOWER BYTE WRITE ENABLE
Figure 1. Block Diagram
Device Pin Assignment
A0
A1
A2
A3
A4
E
DQL0
DQL1
DQL2
DQL3
VDD
VSS
DQL4
DQL5
DQL6
DQL7
W
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A17
A16
A15
G
UB
LB
DQU15
DQU14
DQU13
DQU12
VSS
VDD
DQU11
DQU10
DQU9
DQU8
NC
A14
A13
A12
A11
A10
Table 1. Pin Functions
Signal Name
Function
A[17:0]
Address input
E
Chip enable
W
Write enable
G
Output enable
UB
Upper byte select
LB
Lower byte select
DQL[7:0]
Data I/O, lower byte
DQU[15:8]
Data I/O, upper byte
VDD
Power supply
VSS
Ground
NC
Do not connect this pin
Figure 2. MR2A16A in 44-Pin TSOP Type II Package
MR2A16A Data Sheet, Rev. 4
2
Freescale Semiconductor
Electrical Specifications
Table 2. Operating Modes
Mode
VDD
Current
DQL[7:0]2
DQU[15:8]2
X
Not selected
ISB1, ISB2
Hi-Z
Hi-Z
X
X
Output disabled
IDDA
Hi-Z
Hi-Z
X
H
H
Output disabled
IDDA
Hi-Z
Hi-Z
L
H
L
H
Lower byte read
IDDA
DOut
Hi-Z
L
L
H
H
L
Upper byte read
IDDA
Hi-Z
DOut
L
L
H
L
L
Word read
IDDA
DOut
DOut
L
X
L
L
H
Lower byte write
IDDA
DIn
Hi-Z
L
X
L
H
L
Upper byte write
IDDA
Hi-Z
DIn
L
X
L
L
L
Word write
IDDA
DIn
DIn
E1
G1
W1
LB1
UB1
H
X
X
X
L
H
H
L
X
L
NOTES:
1 H = high, L = low, X = don’t care
2 Hi-Z = high impedance
Electrical Specifications
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage
greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken to
avoid application of any magnetic field more intense than the maximum field intensity specified in the
maximum ratings.
MR2A16A Data Sheet, Rev. 4
Freescale Semiconductor
3
Electrical Specifications
Table 3. Absolute Maximum Ratings1
Parameter
Symbol
Value
Unit
VDD
–0.5 to 4.0
V
VIn
–0.5 to VDD + 0.5
V
IOut
±20
mA
PD
0.600
W
Temperature under bias
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
TBias
–10 to 85
–45 to 95
–45 to 110
Storage temperature
Tstg
–55 to 150
˚C
TLead
260
˚C
Maximum magnetic field during write
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
Hmax_write
15
25
25
Maximum magnetic field during read or standby
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
Hmax_read
100
100
100
Supply
voltage2
Voltage on any
pin2
Output current per pin
Package power
dissipation3
Lead temperature during solder (3 minute max)
˚C
Oe
Oe
NOTES:
1 Permanent device damage may occur if absolute maximum ratings are exceeded. Functional operation
should be restricted to recommended operating conditions. Exposure to excessive voltages or magnetic
fields could affect device reliability.
2 All voltages are referenced to V .
SS
3 Power dissipation capability depends on package characteristics and use environment.
MR2A16A Data Sheet, Rev. 4
4
Freescale Semiconductor
Electrical Specifications
Table 4. Operating Conditions
Parameter
Symbol
Min
Typ
Max
Power supply voltage
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
VDD
3.01
3.02
3.02
3.3
3.3
3.3
3.6
3.6
3.6
Write inhibit voltage
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
VWI
2.5
2.5
2.5
2.7
2.7
2.7
3.01
3.02
3.02
V
Input high voltage
VIH
2.2
—
VDD +
0.33
V
Input low voltage
VIL
–0.54
—
0.8
V
Operating temperature
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
TA
0
-40
-40
70
85
105
Unit
V
˚C
NOTES:
1 After power up or if V
DD falls below VWI, a waiting period of 2 μs must be observed, and E and W
must remain high for 2 μs. Memory is designed to prevent writing for all input pin conditions if VDD
falls below minimum VWI.
2 After power up or if V
DD falls below VWI, a waiting period of 2 ms must be observed, and E and W
must remain high for 2 ms. Memory is designed to prevent writing for all input pin conditions if VDD
falls below minimum VWI.
3 V (max) = V
IH
DD + 0.3 Vdc; VIH (max) = VDD + 2.0 Vac (pulse width ≤ 10 ns) for I ≤ 20.0 mA.
4 V (min) = –0.5 Vdc; V (min) = –2.0 Vac (pulse width ≤ 10 ns) for I ≤ 20.0 mA.
IL
IL
MR2A16A Data Sheet, Rev. 4
Freescale Semiconductor
5
Electrical Specifications
Direct Current (dc)
Table 5. dc Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Input leakage current
Ilkg(I)
—
—
±1
μA
Output leakage current
Ilkg(O)
—
—
±1
μA
Output low voltage
(IOL = +4 mA)
(IOL = +100 μA)
VOL
—
—
0.4
VSS + 0.2
V
Output high voltage
(IOH = –4 mA)
(IOH = –100 mA)
VOH
2.4
VDD – 0.2
—
—
V
Table 6. Power Supply Characteristics
Parameter
Symbol
Typ
Max
Unit
ac active supply current — read
(IOut = 0 mA, VDD = max)
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
IDDR
55
TBD
TBD
80
TBD
TBD
mA
ac active supply current — write modes1
(VDD = max)
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
IDDW
105
TBD
TBD
155
TBD
TBD
mA
ac standby current
(VDD = max, E = VIH)
(no other restrictions on other inputs)
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
ISB1
18
TBD
TBD
28
TBD
TBD
CMOS standby current
(E ≥ VDD – 0.2 V and VIn ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)
(VDD = max, f = 0 MHz)
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
ISB2
9
TBD
TBD
12
TBD
TBD
modes1
mA
mA
NOTES:
1 All active current measurements are measured with one address transition per cycle.
MR2A16A Data Sheet, Rev. 4
6
Freescale Semiconductor
Electrical Specifications
Table 7. Capacitance1
Parameter
Symbol
Typ
Max
Unit
Address input capacitance
CIn
—
6
pF
Control input capacitance
CIn
—
6
pF
Input/output capacitance
CI/O
—
8
pF
NOTES:
1
f = 1.0 MHz, dV = 3.0 V, TA = 25˚C, periodically sampled rather than 100% tested.
Table 8. ac Measurement Conditions
Parameter
Value
Logic input timing measurement reference level
1.5 V
Logic output timing measurement reference level
1.5 V
Logic input pulse levels
0 or 3.0 V
Input rise/fall time
2 ns
Output load for low and high impedance parameters
See Figure 3A
Output load for all other timing parameters
See Figure 3B
+3.3 V
ZD = 50 Ω
725 Ω
OUTPUT
OUTPUT
RL = 50 Ω
600 Ω
5 pF
VL = 1.5 V
A
B
Figure 3. Output Load for ac Test
MR2A16A Data Sheet, Rev. 4
Freescale Semiconductor
7
Timing Specifications
Timing Specifications
Read Mode
Table 9. Read Cycle Timing1, 2
Parameter
Symbol
Min
Max
Unit
Read cycle time
tAVAV
35
—
ns
Address access time
tAVQV
—
35
ns
time3
tELQV
—
35
ns
Output enable access time
tGLQV
—
15
ns
Byte enable access time
tBLQV
—
15
ns
Output hold from address change
tAXQX
3
—
ns
tELQX
3
—
ns
tGLQX
0
—
ns
tBLQX
0
—
ns
tEHQZ
0
15
ns
tGHQZ
0
10
ns
tBHQZ
0
10
ns
Enable access
Enable low to output
active4, 5
Output enable low to output
Byte enable low to output
Enable high to output
active4, 5
active4, 5
Hi-Z4, 5
Output enable high to output
Byte high to output
Hi-Z4, 5
Hi-Z4, 5
NOTES:
1 W is high for read cycle.
2 Due to product sensitivities to noise, power supplies must be properly grounded and
decoupled, and bus contention conditions must be minimized or eliminated during read and
write cycles.
3 Addresses valid before or at the same time E goes low.
4 This parameter is sampled and not 100% tested.
5 Transition is measured ±200 mV from steady-state voltage.
MR2A16A Data Sheet, Rev. 4
8
Freescale Semiconductor
Timing Specifications
tAVAV
A (ADDRESS)
tAXQX
Q (DATA OUT)
PREVIOUS DATA VALID
DATA VALID
tAVQV
NOTES:
1
Device is continuously selected (E ≤ VIL, G ≤ VIL).
Figure 4. Read Cycle 11
tAVAV
A (ADDRESS)
tAVQV
tELQV
E (CHIP ENABLE)
tEHQZ
tELQX
G (OUTPUT ENABLE)
tGHQZ
tGLQV
tGLQX
LB, UB (BYTE ENABLE)
tBHQZ
tBLQV
tBLQX
DATA VALID
Q (DATA OUT)
Figure 5. Read Cycle 2
MR2A16A Data Sheet, Rev. 4
Freescale Semiconductor
9
Timing Specifications
Write Mode
Table 10. Write Cycle Timing 1 (W Controlled)1, 2, 3, 4, 5
Parameter
Symbol
Min
Max
Unit
tAVAV
35
—
ns
Address set-up time
tAVWL
0
—
ns
Address valid to end of write (G high)
tAVWH
18
—
ns
Address valid to end of write (G low)
tAVWH
20
—
ns
Write pulse width (G high)
tWLWH
tWLEH
15
—
ns
Write pulse width (G low)
tWLWH
tWLEH
15
—
ns
Data valid to end of write
tDVWH
10
—
ns
Data hold time
tWHDX
0
—
ns
tWLQZ
0
12
ns
tWHQX
3
—
ns
tWHAX
12
—
ns
Write cycle
time6
Write low to data
Hi-Z7, 8, 9
Write high to output
Write recovery time
active7, 8, 9
NOTES:
1 A write occurs during the overlap of E low and W low.
2 Due to product sensitivities to noise, power supplies must be properly grounded and decoupled and
bus contention conditions must be minimized or eliminated during read and write cycles.
3 If G goes low at the same time or after W goes low, the output will remain in a high-impedance state.
4 After W, E, or UB/LB has been brought high, the signal must remain in steady-state high for a minimum
of 2 ns.
5 The minimum time between E being asserted low in one cycle to E being asserted low in a subsequent
cycle is the same as the minimum cycle time allowed for the device.
6 All write cycle timings are referenced from the last valid address to the first transition address.
7 This parameter is sampled and not 100% tested.
8 Transition is measured ±200 mV from steady-state voltage.
9 At any given voltage or temperature, t
WLQZ max < tWHQX min.
MR2A16A Data Sheet, Rev. 4
10
Freescale Semiconductor
Timing Specifications
tAVAV
A (ADDRESS)
tAVWH
tWHAX
E (CHIP ENABLE)
tWLEH
tWLWH
W (WRITE ENABLE)
tAVWL
LB, UB (BYTE ENABLE)
tDVWH
D (DATA IN)
tWHDX
DATA VALID
tWLQZ
Q (DATA OUT)
Hi-Z
Hi-Z
tWHQX
Figure 6. Write Cycle 1 (W Controlled)
MR2A16A Data Sheet, Rev. 4
Freescale Semiconductor
11
Timing Specifications
Table 11. Write Cycle Timing 2 (E Controlled)1, 2, 3, 4, 5
Parameter
Symbol
Min
Max
Unit
tAVAV
35
—
ns
Address set-up time
tAVEL
0
—
ns
Address valid to end of write (G high)
tAVEH
18
—
ns
Address valid to end of write (G low)
tAVEH
20
—
ns
Enable to end of write (G high)
tELEH
tELWH
15
—
ns
Enable to end of write (G low)7, 8
tELEH
tELWH
15
—
ns
Data valid to end of write
tDVEH
10
—
ns
Data hold time
tEHDX
0
—
ns
Write recovery time
tEHAX
12
—
ns
Write cycle
time6
NOTES:
1 A write occurs during the overlap of E low and W low.
2 Due to product sensitivities to noise, power supplies must be properly grounded and decoupled
and bus contention conditions must be minimized or eliminated during read and write cycles.
3 If G goes low at the same time or after W goes low, the output will remain in a high-impedance
state.
4 After W, E, or UB/LB has been brought high, the signal must remain in steady-state high for a
minimum of 2 ns.
5 The minimum time between E being asserted low in one cycle to E being asserted low in a
subsequent cycle is the same as the minimum cycle time allowed for the device.
6 All write cycle timings are referenced from the last valid address to the first transition address.
7 If E goes low at the same time or after W goes low, the output will remain in a high-impedance
state.
8 If E goes high at the same time or before W goes high, the output will remain in a high-impedance
state.
MR2A16A Data Sheet, Rev. 4
12
Freescale Semiconductor
Timing Specifications
tAVAV
A (ADDRESS)
tAVEH
tEHAX
tELEH
E (CHIP ENABLE)
tAVEL
tELWH
W (WRITE ENABLE)
LB, UB (BYTE ENABLE)
tDVEH
D (DATA IN)
Q (DATA OUT)
tEHDX
DATA VALID
Hi-Z
Figure 7. Write Cycle 2 (E Controlled)
MR2A16A Data Sheet, Rev. 4
Freescale Semiconductor
13
Timing Specifications
Table 12. Write Cycle Timing 3 (LB/UB Controlled)1, 2, 3, 4, 5, 6
Parameter
Symbol
Min
Max
Unit
tAVAV
35
—
ns
Address set-up time
tAVBL
0
—
ns
Address valid to end of write (G high)
tAVBH
18
—
ns
Address valid to end of write (G low)
tAVBH
20
—
ns
Byte pulse width (G high)
tBLEH
tBLWH
15
—
ns
Byte pulse width (G low)
tBLEH
tBLWH
15
—
ns
Data valid to end of write
tDVBH
10
—
ns
Data hold time
tBHDX
0
—
ns
Write recovery time
tBHAX
12
—
ns
Write cycle
time7
NOTES:
1 A write occurs during the overlap of E low and W low.
2 Due to product sensitivities to noise, power supplies must be properly grounded and decoupled and
bus contention conditions must be minimized or eliminated during read and write cycles.
3 If G goes low at the same time or after W goes low, the output will remain in a high-impedance state.
4 After W, E, or UB/LB has been brought high, the signal must remain in steady-state high for a minimum
of 2 ns.
5 If both byte control signals are asserted, the two signals must have no more than 2 ns skew between
them.
6 The minimum time between E being asserted low in one cycle to E being asserted low in a subsequent
cycle is the same as the minimum cycle time allowed for the device.
7 All write cycle timings are referenced from the last valid address to the first transition address.
MR2A16A Data Sheet, Rev. 4
14
Freescale Semiconductor
Timing Specifications
tAVAV
A (ADDRESS)
tAVBH
tBHAX
E (CHIP ENABLE)
tAVBL
tBLEH
tBLWH
LB, UB (BYTE ENABLE)
tBHDX
W (WRITE ENABLE)
tDVBH
D (DATA IN)
Q (DATA OUT)
DATA VALID
Hi-Z
Hi-Z
Figure 8. Write Cycle 3 (LB/UB Controlled)
MR2A16A Data Sheet, Rev. 4
Freescale Semiconductor
15
Ordering Information
Ordering Information
This product is available in Commercial, Industrial, and Extended temperature versions.
Freescale's semiconductor products can be classified into the following tiers: "Commercial", "Industrial"
and “Extended.” A product should only be used in applications appropriate to its tier as shown below. For
questions, please contact a Freescale sales representative.
•
Commercial — Typically 5 year applications - personal computers, PDA's, portable telecom
products, consumer electronics, etc.
•
Industrial, Extended — Typically 10 year applications - installed telecom equipment,
workstations, servers, etc. These products can also be used in Commercial applications.
Current Part Numbering System (Industrial and Extended devices)
(Order by Full Part Number)
MR
2
A
16
A
V
YS
35
Timing Set (35 = 35 ns)
Package Type (YS = TSOP II)
Operating Temperature Range
(C = -40°C to 85°C, V = -40°C to 105°C)
Revision (A = rev 1)
I/O Configuration (08 = 8 bits, 16 = 16 bits)
Freescale MRAM Memory Prefix
Density Code (0 = 1 Mb, 1 = 2 Mb,
2 = 4 Mb, 4 = 16 Mb)
Memory Type (A = async, S = sync)
Legacy Part Numbering System (Commercial devices)
(Order by Full Part Number)
MR
Freescale MRAM Memory Prefix
Density Code (0 = 1 Mb, 1 = 2 Mb,
2 = 4 Mb, 4 = 16 Mb)
Memory Type (A = async, S = sync)
2
A
16
A
TS
35
C
Operating Temperature Range (C = 0°C to 70°C)
Timing Set (35 = 35 ns)
Package Type (TS = TSOP II)
Revision (A = rev 1)
I/O Configuration (08 = 8 bits, 16 = 16 bits)
MR2A16A Data Sheet, Rev. 4
16
Freescale Semiconductor
Package Information
Package Information
Table 13. Package Information
Device
Pin
Count
Package
Type
Designator
Case No.
Document No.
RoHS
Compliant
MR2A16A
44
TSOP
Type II
TS/YS
924A-02
98ASS23673W
True
Revision History
Revision History
Revision
4
Date
Description of Change
18 Jun 2007
Added new Industrial and Extended temperature product information; updated part
ordering information; changed to 2 ms delay after power up; power supply
characteristics values updated to TBD for industrial and extended temperature
devices.
Mechanical Drawing
The following pages detail the package available to MR2A16A.
MR2A16A Data Sheet, Rev. 4
Freescale Semiconductor
17
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product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2004, 2006, 2007.
MR2A16A
Rev. 4, 6/2007
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