Digitron MR2000 Medium current silicon rectifier Datasheet

DIGITRON SEMICONDUCTORS
MR2000 SERIES
MEDIUM CURRENT SILICON RECTIFIERS
MAXIMUM RATINGS
Symbol
MR
2000
MR
2001
MR
2002
MR
2004
MR
2006
MR
2008
MR
2010
Unit
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
Volts
Non-repetitive peak reverse voltage
(half-wave, single phase, 60Hz peak)
VRSM
60
120
240
480
720
960
1200
Volts
RMS forward current
I(RMS)
40
Amps
IO
20
Amps
IFSM
400(1 cycle)
Amps
TJ, Tstg
-65 to +175
°C
Symbol
Maximum
Unit
RӨJC
1.3
°C/W
Ratings
Average rectified forward current
(single phase, resistive load, 60Hz, TC = 150°C)
Non-repetitive peak surge current
(surge applied @ rated load conditions, half
wave, single phase, 60Hz)
Operating and storage temperature range
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
ELECTRICAL CHARACTERISTICS
Symbol
Maximum
Unit
Maximum instantaneous forward voltage
(IF = 63A, TC = 25°C)
Characteristic
VF
1.1
Volts
Maximum reverse current (rated dc voltage)
TC = 25°C
TC = 100°C
IR
100
500
µA
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[email protected]
www.digitroncorp.com
Rev. 20121127
DIGITRON SEMICONDUCTORS
MR2000 SERIES
MEDIUM CURRENT SILICON RECTIFIERS
Duty cycle = D = tp/t1
Peak power = Ppk
is peak of an
equivalent square
power pulse
144 Market Street
Kenilworth NJ 07033 USA
To determine maximum junction temperature of the diode in a given situation the following procedure is recommended:
The temperature of the case should be measured using a thermocouple placed on the case at the temperature reference
point. The thermal mass connected to the case is normally large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation once steady state conditions are achieved. Using the
measured value of TC the junction temperature may be determined by: TJ = TC + ΔTJC, where ΔTJC is the increase in
junction temperature above the case temperature.
It may be determined by ΔTJC = Ppk ● RØJC [D + (1-D) ● r(tr +tp) –r(t1)] where r(t) = normalized value of transient
thermal resistance at time t from figure 6, and r(t1+tp) = normalized value of transient thermal resistance at time t1 +tp.
phone +1.908.245-7200
fax +1.908.245-0555
[email protected]
www.digitroncorp.com
Rev. 20121127
DIGITRON SEMICONDUCTORS
MR2000 SERIES
MEDIUM CURRENT SILICON RECTIFIERS
As the frequency of the input signal is increased, the reverse
recovery time of the diode (figure 9) becomes significant,
resulting in an increasing ac voltage component across RL
which is opposite in polarity to the forward current, thereby
reducing the value of the efficiency factor, σ, as shown in
figure 10.
It should be emphasized that figure 10 shows waveform
efficiency only; it does not provide a measure of diode
losses. Data was obtained by measuring the ac component of
VO with a true rms ac voltmeter and the dc component with
a dc voltmeter. The data was used in Equation 1 to obtain
points for figure 10.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[email protected]
www.digitroncorp.com
Rev. 20121127
DIGITRON SEMICONDUCTORS
MR2000 SERIES
MEDIUM CURRENT SILICON RECTIFIERS
MECHANICAL CHARACTERISTICS
Case
DO-4(R)
Marking
Alpha-numeric
Normal polarity
Cathode is stud
Reverse polarity
Anode is stud (add “R” suffix)
DO-4(R)
A
B
C
D
E
F
G
H
Inches
Min
Max
0.078
0.422 0.453
0.405
0.800
0.420 0.440
0.250
0.424
0.066
-
Millimeters
Min
Max
1.981
10.719 11.506
10.287
20.320
10.668 11.176
6.350
10.770
1.676
-
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[email protected]
www.digitroncorp.com
Rev. 20121127
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