Intersil MR82C82 Cmos octal latching bus driver Datasheet

82C82
CMOS Octal Latching Bus Driver
March 1997
Features
Description
• Full Eight-Bit Parallel Latching Buffer
The Intersil 82C82 is a high performance CMOS Octal
Latching Buffer manufactured using a self-aligned silicon
gate CMOS process (Scaled SAJI IV). The 82C82 provides
an eight-bit parallel latch/buffer in a 20 pin package. The
active high strobe (STB) input allows transparent transfer of
data and latches data on the negative transition of this signal. The active low output enable (OE) permits simple interface to state-of-the-art microprocessor systems.
• Bipolar 8282 Compatible
• Three-State Noninverting Outputs
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . 35ns Max.
• Gated Inputs:
- Reduce Operating Power
- Eliminate the Need for Pull-Up Resistors
Ordering Information
• Single 5V Power Supply
PART NUMBER
TEMP. RANGE
• Low Power Operation . . . . . . . . . . . . . . . ICCSB = 10µA
CP82C82
0oC to +70oC
• Operating Temperature Ranges
- C82C82 . . . . . . . . . . . . . . . . . . . . . . . . . .0oC to +70oC
IP82C82
-40oC to +85oC
CS82C82
0oC to +70oC
- I82C82 . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to +85oC
IS82C82
- M82C82 . . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC
CD82C82
-40oC to +85oC
0oC to +70oC
ID82C82
MD82C82/B
PACKAGE
E20.3
20 Ld PLCC
N20.35
20 Ld CERDIP F20.3
-40oC to +85oC
-55oC to +125oC
8406701RA
MR82C82/B
PKG. NO.
20 Ld PDIP
SMD #
-55oC to +125oC 20 Pad CLCC
84067012A
J20.A
SMD #
Pinouts
DI0
1
20 VCC
DI1
2
19 DO0
DI2
3
18 DO1
DI1
DI0
VCC
DO0
82C82 (PLCC, CLCC)
TOP VIEW
DI2
82C82 (PDIP, CERDIP)
TOP VIEW
3
2
1
20
19
DI3 4
TRUTH TABLE
18 DO1
DI4 5
17 DO2
DI3
4
17 DO2
DI4
5
16 DO3
DI5 6
16 DO3
DI5
6
15 DO4
DI6 7
15 DO4
DI6
7
14 DO5
DI7 8
14 DO5
DI7
8
13 DO6
OE
9
12 DO7
GND 10
11 STB
STB
OE
DI
DO
X
H
X
Hi-Z
H
L
L
L
H
L
H
H
↓
L
X
†
H
L
X
†
= Logic One
= Logic Zero
= Don’t Care
= Latched to Value of Last
Data
Hi-Z = High Impedance
↓
= Neg. Transition
PIN NAMES
13
DO6
12
DO7
11
STB
10
GND
OE
9
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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PIN
DI0-DI7
DESCRIPTION
Data Input Pins
DO0-DO7
Data Output Pins
STB
Active High Strobe
OE
Active Low Output
Enable
File Number
2975.1
82C82
Functional Diagram
DIO
D Q
CLK
DO0
DI1
DO1
DI2
DO2
DI3
DO3
DI4
DO4
DI5
DO5
DI6
DO6
DI7
DO7
STB
OE
Gated Inputs
During normal system operation of a latch, signals on the bus
at the device inputs will become high impedance or make
transitions unrelated to the operation of the latch. These unrelated input transitions switch the input circuitry and typically
cause an increase in power dissipation in CMOS devices by
creating a low resistance path between VCC and GND when
the signal is at or near the input switching threshold. Additionally, if the driving signal becomes high impedance (“float” condition), it could create an indeterminate logic state at the input
and cause a disruption in device operation.
The Intersil 82C8X Series of bus drivers eliminates these conditions by turning off data inputs when data is latched (STB =
logic zero for the 82C82/83H) and when the device is disabled
(OE = logic one for 82C86H/87H). These gated inputs disconnect the input circuitry from the VCC and ground power
supply pins by turning off the upper P-channel and lower Nchannel (see Figures 1, 2). No new current flow from VCC to
GND occurs during input transitions and invalid logic states
from floating inputs are not transmitted. The next stage is held
to a valid logic level internal to the device.
DC input voltage levels can also cause an increase in ICC if
these input levels approach the minimum VIH or maximum
VIL conditions. This is due to the operation of the input circuitry in its linear operating region (partially conducting
state). The 82C8X series gated inputs mean that this condition will occur only during the time the device is in the trans
parent mode (STB = logic one). ICC remains below the maximum ICC standby specification of l0mA during the time
inputs are disabled, thereby, greatly reducing the average
power dissipation of the 82C8X series devices
Typical 82C82 System Example
In a typical 80C86/88 system, the 82C82 is used to latch
multiplexed addresses and the STB input is driven by ALE
(Address Latch Enable) (see Figure 3). The high pulse width
of ALE is approximately 100ns with a bus cycle time of
800ns (80C86/88 at 5MHz). The 82C82 inputs are active
only 12.5% of the bus cycle time. Average power dissipation
related to input transitioning is reduced by this factor also.
VCC
VCC
VCC
P
P
P
OE
STB
N
P
INTERNAL
DATA
DATA IN
VCC
INTERNAL
DATA
DATA IN
P
N
P
N
N
N
N
FIGURE 16. 82C82/83H
FIGURE 17. 82C86H/87H GATED INPUTS
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82C82
Application Information
Decoupling Capacitors
The transient current required to charge and discharge the
300pF load capacitance specified in the 82C82 data sheet is
determined by:
I = C L (dv/dt)
(EQ. 1)
Assuming that all outputs change state at the same time and
that dv/dt is constant;
I = CL
(EQ. 2)
( V CC x 80% )
----------------------------------tR/tF
(EQ. 3)
where tR = 20ns, VCC = 5.0V, CL = 300pF on each of eight
outputs.
I = ( 8 x 300 x 10
-12
)x (5.0V x 0.8)/ ( 20 x 10
–9
) = 480mA
(EQ. 4)
This current spike may cause a large negative voltage spike
on VCC, which could cause improper operation of the device.
To filter out this noise, it is recommended that a 0.1µF
ceramic disc decoupling capacitor be placed between VCC
and GND at each device, with placement being as near to
the device as possible.
VCC
VCC
P
P
ALE
MULTIPLEXED
BUS
N
STB
ADDRESS
P
ADDRESS
INTERNAL
DATA
DATA IN
N
ICC
N
FIGURE 18. SYSTEM EFFECTS OF GATED INPUTS
4-276
82C82
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +8.0V
Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.5V to VCC +0.5V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance (Typical)
θJA
θJC
CERDIP . . . . . . . . . . . . . . . . . . . . . . . . 75oC/W
18oC/W
CLCC. . . . . . . . . . . . . . . . . . . . . . . . . . 85oC/W
22oC/W
PDIP . . . . . . . . . . . . . . . . . . . . . . . . . .
75
N/A
PLCC . . . . . . . . . . . . . . . . . . . . . . . . . .
75
N/A
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65oC to +150oC
Maximum Junction Temperature
Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oC
Minimum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300oC
(PLCC Lead Tips Only)
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
C82C82. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to +70oC
I82C82 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to +85oC
M82C82 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications
SYMBOL
VIH
VCC = 5.0V ±10%;
PARAMETER
Logical One Input Voltage
VIL
Logical Zero Input Voltage
VOH
Logical One Output Voltage
VOL
Logical Zero Output Voltage
TA = 0oC to +70oC (C82C82);
TA = -40oC to +85oC (I82C82);
TA = -55oC to +125oC (M82C82)
MIN
MAX
UNITS
TEST CONDITIONS
2.0
-
V
C82C82, I82C82 (Note 1)
2.2
-
V
M82C82 (Note 1)
-
0.8
V
2.9
-
V
IOH = -8mA, OE = GND
VCC -0.4V
-
V
IOH = -100µA, OE = GND
-
0.4
V
IOL = 8mA, OE = GND
II
Input Leakage Current
-1.0
1.0
µA
VIN = GND or VCC, DIP Pins 1-9, 11
IO
Output Leakage Current
-10.0
10.0
µA
VO = GND or VCC, OE ≥ VCC -0.5V
DIP Pins 12-19
VIN = VCC or GND, VCC = 5.5V, Outputs Open
ICCSB
Standby Power Supply Current
-
10
µA
ICCOP
Operating Power Supply
Current
-
1
mA/MHz
TA = +25oC, VCC = 5V, Typical (See Note 2)
NOTES:
1. VIH is measured by applying a pulse of magnitude = VIH min to one data input at a time and checking the corresponding device output
for a valid logical “1” during valid input high time. Control pins (STB, OE) are tested separately with all device data input pins at VCC -0.4.
2. Typical ICCOP = 1mA/MHz of STB cycle time. (Example: 5MHz µP, ALE = 1.25MHz, ICCOP = 1.25mA).
Capacitance
SYMBOL
TA = +25oC
PARAMETER
TYPICAL
UNITS
TEST CONDITIONS
Freq = 1MHz, all measurements are
referenced to device GND
CIN
Input Capacitance
13
pF
COUT
Output Capacitance
20
pF
4-277
82C82
AC Electrical Specifications
SYMBOL
VCC = 5.0V ±10%;
TA = 0oC to +70oC (C82C82);
CL = 300pF (Note 1), Freq = 1MHz TA = -40oC to +85oC (I82C82);
TA = -55oC to +125oC (M82C82)
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
(1)
TIVOV
Propagation Delay Input to Output
-
35
ns
Notes 2, 3
(2)
TSHOV
Propagation Delay STB to Output
-
55
ns
Notes 2, 3
(3)
TEHOZ
Output Disable Time
-
35
ns
Notes 2, 3
(4)
TELOV
Output Enable Time
-
50
ns
Notes 2, 3
(5)
TIVSL
Input to STB Setup Time
0
-
ns
Notes 2, 3
(6)
TSLIX
Input to STB Hold Time
25
-
ns
Notes 2, 3
(7)
TSHSL
STB High Time
25
-
ns
Notes 2, 3
(8)
TR, TF
Input Rise/Fall Times
-
20
ns
Notes 2, 3
NOTES:
1. Output load capacitance is rated at 300pF for ceramic and plastic packages.
2. All AC parameters tested as per test circuits and definitions below. Input rise and fall times are driven at 1ns/V.
3. Input test signals must switch between VIL - 0.4V and VIH +0.4V.
Timing Waveforms
TR, TF (8)
2.0V
0.8V
INPUTS
TIVSL (5)
TSLIX
(6)
STB
TSHSL (7)
OE
TIVOV
(1)
TELOV (4)
TEHOZ (3)
VOH -0.1V
OUTPUTS
VOL +0.1V
2.4V
0.8V
TSHOV (2)
Test Load Circuits
1.7V
150Ω
OUTPUT
0.6V
TEST
POINT
300pF
(NOTE)
TIVOV, TSHOV, TELOV
3.3V
300Ω
OUTPUT
TEST
POINT
50pF
(NOTE)
TEHOZ OUTPUT HIGH DISABLE
NOTE: Includes stray and jig capacitance.
4-278
300Ω
OUTPUT
TEST
POINT
50pF
(NOTE)
TEHOZ OUTPUT LOW DISABLE
82C82
Burn-In Circuits
MD82C82 CERDIP
VCC
F2
F2
F2
F2
F2
F2
F2
F2
F0
R1
1
R1
C1
20
2
19
A
3
18
A
4
17
A
5
16
A
6
15
A
7
14
A
8
13
A
9
12
10
11
R1
R1
R1
R1
R1
R1
R1
VCC
R2
A
A
R1
R2
F1
MR82C82 CLCC
C1
VCC
F2
F2
R3
3
F2
F2
F2
F2
F2
R3
R3
R3
R3
R3
VCC/2
F2
R3
2
R3
R3
1
20
19
18
4
5
17
16
6
15
7
14
8
9
10
R3
F0
11
12
R3
13
R3
R3
F1 VCC/2 VCC/2
NOTES:
1. VCC = 5.5 ± 0.5V, GND = 0V.
2. VIH = 4.5V ±10%.
3. VIL = -0.2V to 0.4V.
4. R1 = 47kΩ ±5%.
5. R2 = 2.0kΩ ±5%.
6. R3 = 4.2kΩ ±5%.
7. R4 = 470kΩ ±5%.
8. C1 = 0.01µF minimum.
9. F0 = 100kHz ±10%.
10. F1 = F0/2, F2 = F1/2.
4-279
R3
R3
R3
R3
R3
VCC/2
VCC/2
VCC/2
VCC/2
VCC/2
82C82
Die Characteristics
DIE DIMENSIONS:
118.1 x 92.1 x 19 ±1mils
GLASSIVATION:
Type: SiO2
Thickness: 8kÅ ±1kÅ
METALLIZATION:
Type: Si - Al
Thickness: 11kÅ ±1kÅ
WORST CASE CURRENT DENSITY:
2.00 x 105 A/cm2
Metallization Mask Layout
82C82
D12
D11
D10
VCC
DO0
D01
2
1
20
19
18
3
D13
4
D14
5
D15
6
D16
7
8
9
10
11
12
D17
OE
GND
STB
DO7
17
DO2
16
DO3
15
DO4
14
DO5
13
DO6
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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