MACOM MRF10502 Microwave power transistor npn silicon Datasheet

Order this document
by MRF10502/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed for 1025– 1150 MHz pulse common base amplifier applications
such as TCAS, T ACAN and Mode–S transmitters.
500 W (PEAK)
1025 – 1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
• Guaranteed Performance @ 1090 MHz
Output Power = 500 Watts Peak
Gain = 8.5 dB Min, 9.0 dB (Typ)
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Hermetically Sealed Industry Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input and Output Matching
• Characterized with 10 µs, 1% Duty Cycle Pulses
CASE 355J–02, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
65
Vdc
Collector–Base Voltage
VCBO
65
Vdc
Emitter–Base Voltage
VEBO
3.5
Vdc
Collector Current — Peak
IC
29
Adc
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°C
(1)
PD
1460
8.3
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +200
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
0.12
°C/W
Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θ JC value
measured @ 32 µs, 2%.)
Replaces MRF10500/D
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)
V(BR)CES
65
—
—
Vdc
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0)
V(BR)CBO
65
—
—
Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
3.5
—
—
Vdc
ICBO
—
—
25
mAdc
hFE
20
—
—
—
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz)
GPB
8.5
9.0
—
dB
Collector Efficiency
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz)
η
40
45
—
%
Load Mismatch
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψ
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
FUNCTIONAL TESTS
No Degradation in Output Power
C2
L1
Z5
C3
C4
+
–
+
D.U.T.
C1
RF INPUT
Z1
Z2
Z3
Z4
Z6
Z7
Z8
Z9
RF OUTPUT
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
εr = 2.55, 2 Oz. Copper
C1 — 82 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1 µF
C4 — 100 µF, 100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
.700
.150
.160
.625
.081
.355
1.123
2.000
.650
1.725
.105
.081
.100
.216
.081
1.309
.644
.365
1.108
.500
0.140
Figure 1. Test Circuit
Replaces MRF10500/D
2
POUT, OUTPUT POWER (WATTS)
600
450
300
f = 1090 MHz
VCC = 50 Volts
150
0
15
30
45
60
75
100
115
PIN, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
1120
1150
ZOUT (ZOL*)
1090
1060
f = 1030 MHz
f = 1030 MHz
Zin
1150
Zo = 10 Ω
1060
1090
1120
POUT = 500 W Pk VCC = 50 V
f
MHz
Zin
OHMS
ZOL* (ZOUT)
OHMS
1030
55.3 + j2.25
62.6 + j1.89
1060
56.2 + j0.25
2.56 + j2.09
1090
55.2 – j1.45
2.12 + j2.29
1120
53.7 – j1.35
21.9 + j2.15
1150
3.15 – j1.35
91.6 + j1.62
ZOL* is the conjugate of the optimum load
impedance into which the device operates at a
given output power voltage and frequency.
Figure 3. Series Equivalent Input/Output Impedances
Replaces MRF10500/D
3
PACKAGE DIMENSIONS
–A–
RADIUS
Q
2 PL
U
M
0.51 (0.020)
M
T A
1
K R
–B–
2
D
N
E
H
C
–T–
SEATING
PLANE
CASE 355J–02
ISSUE A
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Replaces MRF10500/D
4
B
M
DIM
A
B
C
D
E
H
J
K
M
N
Q
R
U
3
J
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
MIN MAX MIN
MAX
0.990
1.010
25.15
25.65
0.375
0.395
9.53
10.03
0.145
0.175
3.68
4.45
0.195
0.205
4.95
5.21
0.055
0.065
1.40
1.65
0.117
0.133
2.97
3.38
0.003
0.006
0.08
0.15
0.580
0.620
14.73
15.75
45 _REF
45 _REF
0.590
0.610
14.99
15.49
0.055
0.065
1.40
1.65
0.395
0.405
10.03
10.29
0.800 BSC
20.32 BSC
STYLE 1:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
Similar pages