MOTOROLA MRF1535T1 Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
MRF1535T1
Rev. 6, 1/2005
RF Power Field Effect Transistors
MRF1535NT1
MRF1535FNT1
MRF1535T1
MRF1535FT1
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for large−signal, common source amplifier applications in
12.5 volt mobile FM equipment.
• Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 35 Watts
Power Gain — 10.0 dB
Efficiency — 50%
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
• Excellent Thermal Stability
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• Broadband−Full Power Across the Band: 135−175 MHz
400−470 MHz
450−520 MHz
• Broadband UHF/VHF Demonstration Amplifier Information Available
Upon Request
• N Suffix Indicates Lead−Free Terminations
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
520 MHz, 35 W, 12.5 V
LATERAL N−CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264−09, STYLE 1
TO−272
PLASTIC
MRF1535T1(NT1)
CASE 1264A−02, STYLE 1
TO−272 STRAIGHT LEAD
PLASTIC
MRF1535FT1(FNT1)
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain−Source Voltage
VDSS
−0.5, +40
Vdc
Gate−Source Voltage
VGS
± 20
Vdc
ID
6
Adc
PD
135
0.50
W
W/°C
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature
TJ
175
°C
Symbol
Value
Unit
RθJC
0.90
°C/W
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
(1)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22−A113, IPC/JEDEC J−STD−020
1. Calculated based on the formula PD =
Rating
Package Peak Temperature
Unit
1
260
°C
TJ – TC
RθJC
NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
60
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate−Source Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
IGSS
—
—
0.3
µAdc
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 400 µA)
VGS(th)
1
—
2.6
Vdc
Drain−Source On−Voltage
(VGS = 5 Vdc, ID = 0.6 A)
RDS(on)
—
—
0.7
Ω
Drain−Source On−Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on)
—
—
1
Vdc
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Ciss
—
—
250
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Coss
—
—
150
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Crss
—
—
20
pF
10
—
—
50
—
—
Off Characteristics
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
On Characteristics
Dynamic Characteristics
RF Characteristics (In Freescale Test Fixture)
Common−Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA)
f = 520 MHz
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA)
f = 520 MHz
Load Mismatch
(VDD = 15.6 Vdc, f = 520 MHz, 2 dB Input Overdrive, VSWR 20:1 at
All Phase Angles)
Gps
η
Ψ
dB
%
No Degradation in Output Power
Before and After Test
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
2
RF Device Data
Freescale Semiconductor
B1
C1, C9, C20, C23
C2, C5
C3, C15
C4, C6, C19
C7
C8
C10, C21
C11, C22
C12, C13
C14
C16
C17
C18
L1
L2
L3
L4
L5
N1, N2
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
Ferroxcube #VK200
330 pF, 100 mil Chip Capacitors
0 to 20 pF Trimmer Capacitors
33 pF, 100 mil Chip Capacitors
18 pF, 100 mil Chip Capacitors
160 pF, 100 mil Chip Capacitor
240 pF, 100 mil Chip Capacitor
10 µF, 50 V Electrolytic Capacitors
470 pF, 100 mil Chip Capacitors
150 pF, 100 mil Chip Capacitors
110 pF, 100 mil Chip Capacitor
68 pF, 100 mil Chip Capacitor
120 pF, 100 mil Chip Capacitor
51 pF, 100 mil Chip Capacitor
17.5 nH, Coilcraft #A05T
5 nH, Coilcraft #A02T
1 Turn, #26 AWG, 0.250″ ID
1 Turn, #26 AWG, 0.240″ ID
4 Turn, #24 AWG, 0.180″ ID
Type N Flange Mounts
6.5 Ω, 1/4 W Chip Resistor
39 Ω Chip Resistor (0805)
1.2 kΩ, 1/8 W Chip Resistor
33 kΩ, 1/4 W Chip Resistor
0.970″ x 0.080″ Microstrip
0.380″ x 0.080″ Microstrip
0.190″ x 0.080″ Microstrip
0.160″ x 0.080″ Microstrip
0.110″ x 0.200″ Microstrip
0.490″ x 0.080″ Microstrip
0.250″ x 0.080″ Microstrip
0.320″ x 0.080″ Microstrip
0.240″ x 0.080″ Microstrip
Glass Teflon®, 31 mils
Figure 1. 135 − 175 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 135 − 175 MHz
&! &$$&"'%
+, +, +,-
&
& & !&"#$%
*
+, +, +,-
*
*
. / '0
. / '0
()
! "#$%
Figure 2. Output Power versus Input Power
*
! "#$%
Figure 3. Input Return Loss versus Output Power
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS, 135 − 175 MHz
. / '0
+, ! 3&"4%
h&# &!
# &"'%
+,-
+,
+,-
! "#$%
Figure 4. Gain versus Output Power
! 3&"4%
+,-
h&# &!
+,-
+,
! "#$%
+,-
+,
+,-
. / '0
() . '2
1 #$
1 #$
! "2#%
Figure 7. Drain Efficiency versus Biasing Current
! 3&"4%
+,-
+,-
+,-
h&# &!
& & !&"#$%
. / '0
() . '2
! "2#%
Figure 6. Output Power versus Biasing Current
Figure 5. Drain Efficiency versus Output Power
& & !&"#$%
+,-
. / '0
+,-
+,-
+,
+,-
1 . 2#
1 . 2#
() . '2
$
3 #! "$%
Figure 8. Output Power versus Supply Voltage
() .
$
'2
3 #! "$%
Figure 9. Drain Efficiency versus Supply Voltage
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
4
RF Device Data
Freescale Semiconductor
B1
C1
C2
C3
C4
C5
C6, C7
C8, C15, C16
C9
C10, C14, C25
C11, C22
C12, C24
C13, C23
C17, C18
C19
C20
C21
L1
N1, N2
R1
R2
R3
Z1
Z2
Z3
Z4
Z5, Z8
Z6, Z7
Z9
Z10
Board
Ferroxcube VK200
160 pF, 100 mil Chip Capacitor
3 pF, 100 mil Chip Capacitor
3.6 pF, 100 mil Chip Capacitor
2.2 pF, 100 mil Chip Capacitor
10 pF, 100 mil Chip Capacitor
16 pF, 100 mil Chip Capacitors
27 pF, 100 mil Chip Capacitors
43 pF, 100 mil Chip Capacitor
160 pF, 100 mil Chip Capacitors
10 µF, 50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1 µF, 100 mil Chip Capacitors
24 pF, 100 mil Chip Capacitors
160 pF, 100 mil Chip Capacitor
8.2 pF, 100 mil Chip Capacitor
1.8 pF, 100 mil Chip Capacitor
47.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
500 Ω Chip Resistor (0805)
1 kΩ Chip Resistor (0805)
33 kΩ, 1/8 W Chip Resistor
0.480″ x 0.080″ Microstrip
1.070″ x 0.080″ Microstrip
0.290″ x 0.080″ Microstrip
0.160″ x 0.080″ Microstrip
0.120″ x 0.080″ Microstrip
0.120″ x 0.223″ Microstrip
1.380″ x 0.080″ Microstrip
0.625″ x 0.080″ Microstrip
Glass Teflon®, 31 mils
Figure 10. 450 − 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 450 − 520 MHz
&! &$$&"'%
+,-
+,-
+,-
+,-
. / '0
*
+,*
+,-
&
& & !&"#$%
+, +,-
. / '0
()
! "#$%
Figure 11. Output Power versus Input Power
*
! "#$%
Figure 12. Input Return Loss versus Output Power
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS, 450 − 520 MHz
+,-
h&# &!
# &"'%
! 3&"4%
+,
. / '0
+,-
! "#$%
! "#$%
Figure 14. Drain Efficiency versus Output Power
! 3&"4%
+,
+, +,-
+,-
h&# &!
& & !&"#$%
+,-
+,-
Figure 13. Gain versus Output Power
+,-
+,
+,-
+,-
. / '0
() . '2
1 #$
. / '0
() . '2
! "2#%
1 #$
Figure 15. Output Power versus Biasing Current
! "2#%
Figure 16. Drain Efficiency versus Biasing Current
! 3&"4%
+,-
+,-
+,-
+,1 . 2#
h&# &!
& & !&"#$%
+,-
+,-
. / '0
+,-
() .
$
+,
+, +,-
1 . 2#
'2
+,-
3 #! "$%
Figure 17. Output Power versus Supply Voltage
() .
$
'2
3 #! "$%
Figure 18. Drain Efficiency versus Supply Voltage
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
6
RF Device Data
Freescale Semiconductor
. Ω
()
5
6 . +,-
6 . +,- 6 . +,-
6 . +,-
6 . +,-
5
6 . +,-
6 . +,-
6 . +,()
. / 1 . 2# . . / 1 . 2# . Zin
f
MHz
Zin
Ω
ZOL*
Ω
f
MHz
Zin
Ω
ZOL*
Ω
135
5.0 + j0.9
1.7 + j0.2
450
0.8 − j1.4
1.0 − j0.8
155
5.0 + j0.9
1.7 + j0.2
470
0.9 − j1.4
1.1 − j0.6
175
3.0 + j1.0
1.3 + j0.1
500
1.0 − j1.4
1.1 − j0.6
520
0.9 − j1.4
1.1 − j0.5
= Complex conjugate of source
impedance.
Zin
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
= Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
)7
+809():
;<=>
7
+809():
;<=>
;?(0;
)';= ;@
Z
in
Z
*
OL
Figure 19. Series Equivalent Input and Output Impedance
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
RF Device Data
Freescale Semiconductor
7
Table 5. Common Source Scattering Parameters (VDD = 12.5 Vdc)
IDQ = 250 mA
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.89
−173
8.496
83
0.014
−26
0.76
−170
100
0.90
−175
3.936
72
0.014
−14
0.79
−170
150
0.91
−175
2.429
63
0.011
−23
0.82
−170
200
0.92
−175
1.627
57
0.010
−44
0.86
−170
250
0.94
−176
1.186
53
0.007
−16
0.88
−170
300
0.95
−176
0.888
49
0.005
−44
0.91
−171
350
0.96
−176
0.686
48
0.005
36
0.92
−170
400
0.96
−176
0.568
44
0.005
−1
0.94
−171
450
0.97
−176
0.457
44
0.004
49
0.94
−172
500
0.97
−176
0.394
44
0.003
−51
0.95
−171
550
0.98
−176
0.332
42
0.001
31
0.95
−173
600
0.98
−177
0.286
41
0.013
99
0.94
−173
IDQ = 1.0 A
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.90
−173
8.49
83
0.006
−39
0.86
−176
100
0.90
−175
3.92
72
0.009
−5
0.86
−176
150
0.91
−175
2.44
63
0.006
7
0.87
−176
200
0.92
−175
1.62
57
0.008
21
0.88
−175
250
0.94
−176
1.19
53
0.006
8
0.89
−174
300
0.95
−176
0.89
48
0.008
3
0.89
−174
350
0.96
−176
0.69
48
0.007
48
0.91
−174
400
0.96
−176
0.57
44
0.004
41
0.93
−173
450
0.97
−176
0.46
44
0.004
43
0.93
−173
500
0.97
−176
0.39
44
0.003
57
0.94
−173
550
0.98
−176
0.33
41
0.006
62
0.94
−174
600
0.98
−177
0.28
41
0.009
96
0.93
−173
IDQ = 2.0 A
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.94
−176
9.42
88
0.005
−72
0.89
−177
100
0.94
−178
4.56
82
0.005
4
0.89
−177
150
0.94
−178
2.99
78
0.003
7
0.89
−177
200
0.94
−178
2.14
74
0.005
17
0.90
−176
250
0.95
−178
1.67
71
0.004
40
0.90
−175
300
0.95
−178
1.32
67
0.007
35
0.91
−175
350
0.95
−178
1.08
67
0.005
57
0.92
−174
400
0.96
−178
0.93
63
0.003
50
0.93
−173
450
0.96
−178
0.78
62
0.007
68
0.93
−173
500
0.96
−177
0.68
61
0.004
99
0.94
−173
550
0.97
−177
0.59
58
0.008
78
0.93
−175
600
0.97
−178
0.51
57
0.009
92
0.92
−174
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
8
RF Device Data
Freescale Semiconductor
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common−source, RF power, N−Channel
enhancement mode, Lateral Metal−Oxide Semiconductor
Field−Effect Transistor (MOSFET). Freescale Application
Note AN211A, “FETs in Theory and Practice”, is suggested
reading for those not familiar with the construction and characteristics of FETs.
This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications.
Manufacturability is improved by utilizing the tape and reel
capability for fully automated pick and placement of parts.
However, care should be taken in the design process to insure proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mismatched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate−to−drain (Cgd), and
gate−to−source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance
from drain−to−source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer
(Crss) capacitances on data sheets. The relationships between the inter−terminal capacitances and those given on
data sheets are shown below. The Ciss can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF applications.
=8()
:'
8;
'@
(@@ . :' :@
@@ . :' '@
=@@ . :'
:@
$=0;
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full−on condition. This on−resistance, RDS(on), occurs
in the linear region of the output characteristic and is specified at a specific gate−source voltage and drain current. The
drain−source voltage under these conditions is termed
VDS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high − on the order of 109 Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate−to−source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open−circuited or floating should be avoided. These conditions can
result in turn−on of the devices due to voltage build−up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate−to−source. If gate protection is required, an external zener diode is recommended.
Using a resistor to keep the gate−to−source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate−drain capacitance. If the
gate−to−source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate−threshold voltage
and turn the device on.
DC BIAS
Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (IDQ), whose value is application dependent.
This device was characterized at IDQ = 150 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
RF Device Data
Freescale Semiconductor
9
MOUNTING
The specified maximum thermal resistance of 0.9°C/W assumes a majority of the 0.170″ x 0.608″ source contact on
the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Freescale Application
Note AN4005/D, “Thermal Management and Mounting Method for the PLD−1.5 RF Power Surface Mount Package,” and
Engineering Bulletin EB209/D, “Mounting Method for RF
Power Leadless Surface Mount Transistor” for additional information.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large−signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region.
Two−port stability analysis with this device’s
S−parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Freescale Application Note AN215A, “RF Small−Signal Design
Using Two−Port Parameters” for a discussion of two port
network theory and stability.
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
10
RF Device Data
Freescale Semiconductor
NOTES
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
RF Device Data
Freescale Semiconductor
11
NOTES
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
12
RF Device Data
Freescale Semiconductor
NOTES
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
RF Device Data
Freescale Semiconductor
13
PACKAGE DIMENSIONS
A
E1
B
r1
6
4
b2
4X
888
+
1
#
D1
888
+
DRAIN ID
#
5
2X
b1
888
5
+
2
#
D
4X
e
4
3
6
4X
b3
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
DRAIN ID
NOTE 6
3
2
1
E2
VIEW Y−Y
E
C
SEATING
PLANE
D
SEATING
PLANE
!$A
/ +! $ A , /
/ ! ! +! $ $ # !# !$
! #$+! 3/+ /
/ #+ # ! *,* $ #! # !#
# $ ! , ,! !# ,!!
,! !# !B $ ,! #$ 3 # ,!
,! # !/
/ +! $ # ! ! +
$ / ##! $ $
/ ! $ !/ +! $ # ! ! + + $+#, # #!
!!+ ! # #+ # ! *,*/
/ +! $ $ C # C !
#+# $ / ##! #+#
$ $,# ! / # !B!$$
,! C # C +! $ $ # +#B ++
+#! # /
/ $$,#, ! !$! $ ,! !B $!
#!# ,! ,!# $/
A
DATUM
PLANE
H
E2
Y
Y
A1
L
q
A2
$3! A
/
/
/
/
/
/
c1
$! "++
#
$! "++
$! "++
#!
$! "++
%
%
%
%
DIM
A
A1
A2
D
D1
E
E1
E2
L
b1
b2
b3
c1
e
r1
q
aaa
INCHES
MIN
MAX
/
/
/
/
/
/
/
/ /
/
/
/ /
/
/
/
/
/
/
/
/
/
/
/
/
/
/ &$
/
/
&_
&_
/
MILLIMETERS
MIN
MAX
/
/
/
/
/
/
/
/
/
/
/
/
/ /
/
/
/
/
/
/
/
/
/
/ /
/
/&$
/
/
_
_
/
CASE 1264−09
ISSUE J
TO−272
PLASTIC
MRF1535T1(NT1)
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
14
RF Device Data
Freescale Semiconductor
2X
888
4X
+
P
+
E2
# b2
888
A
E1
B
#
4
1
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
6
DRAIN ID
2X
b1
888
+
#
5
2
D
D2
5
4X
e
6
3
4
4X
b3
D1
888
+
#
E
A
SEATING
PLANE
F
Y
NOTE 5
3
2
1
CCC # VIEW Y−Y
c1
D
DRAIN ID
ZONE "J"
Y
A1
$3! A
/
/
/
/
/
/
6 A2
$! "++
#
$! "++
$! "++
#!
$! "++
%
%
%
%
CASE 1264A−02
ISSUE A
TO−272 STRAIGHT LEAD
PLASTIC
MRF1535FT1(FNT1)
!$A
/ +! $ A ,/
/ ! ! +! $ $ # !# !$
! #$+! 3/+ /
/ +! $ $ # ! ! +
$ / ##! $ $
/ ! $ !/ +! $ $ # ! ! + + $+#, # #!
!!+ ! # #+ # ! *,*/
/ +! $ $ C # C !
#+# $ / ##! #+#
$ $,# ! / # !B!$$
,! C # C +! $ $ # +#B ++
+#! # /
/ $$,#, ! !$! $ ,! !B $!
#!# ,! ,!# $/
/ +! $ # # !$ , ! D 3/
DIM
A
A1
A2
D
D1
D2
E
E1
E2
F
P
b1
b2
b3
c1
e
aaa
bbb
INCHES
MIN
MAX
/
/
/ /
/
/
/
/ /&$
/&$
/
/
/
/
/&$
/&$
/
/ /
/
/
/
/
/
/
/
/ &$
/
/
MILLIMETERS
MIN
MAX
/
/
/
/
/
/
/
/
/&$
/&$
/
/
/
/
/ &$
/&$
/
/
/
/
/
/
/
/ /
/
/&$
/
/
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
RF Device Data
Freescale Semiconductor
15
How to Reach Us:
Home Page:
www.freescale.com
E−mail:
[email protected]
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1−800−521−6274 or +1−480−768−2130
[email protected]
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
[email protected]
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1−8−1, Shimo−Meguro, Meguro−ku,
Tokyo 153−0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1−800−441−2447 or 303−675−2140
Fax: 303−675−2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2005. All rights reserved.
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
Document Number: MRF1535T1
Rev. 6, 1/2005
16
RF Device Data
Freescale Semiconductor
Similar pages