MOTOROLA MRF5S19150SR3 Rf power field effect transistor Datasheet

MOTOROLA
Freescale Semiconductor, Inc.
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by MRF5S19150/D
SEMICONDUCTOR TECHNICAL DATA
The RF Sub - Micron MOSFET Line
Freescale Semiconductor, Inc...
RF Power Field Effect Transistors MRF5S19150R3
N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19150SR3
Designed for PCN and PCS base station applications at frequencies from
1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts,
Pout = 32 Watts, IDQ = 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 32 Watts Avg.
Power Gain — 14 dB
Efficiency — 26%
ACPR — - 50 dB
IM3 — - 36.5 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
100 Watts CW Output Power
• Excellent Thermal Stability
• Qualified Up to a Maximum of 32 V Operation
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1990 MHz, 32 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19150R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19150SR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
357
2
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
CW
100
Watts
Symbol
Value (1,2)
Unit
CW Operation
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 80°C, 32 W CW
RθJC
0.49
0.53
°C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2004
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MRF5S19150R3 MRF5S19150SR3
1
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ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 360 µAdc)
VGS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1400 mAdc)
VGS(Q)
—
3.8
—
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
—
0.24
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3.6 Adc)
gfs
—
9
—
S
Crss
—
3.1
—
pF
Characteristic
Freescale Semiconductor, Inc...
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF.
Common- Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Gps
13
14
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
24
26
—
%
IM3
—
- 36.5
- 35
dBc
ACPR
—
- 50
- 48
dBc
IRL
—
- 17
-9
dB
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz
referenced to carrier channel power.)
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1 - 885 MHz and f2 +885 MHz)
Input Return Loss
(VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
(1) Part is internally matched both on input and output.
MRF5S19150R3 MRF5S19150SR3
2
MOTOROLA RF DEVICE DATA
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+
C9
B1
C17
+
C18
C19
+
C20
R1
VGG
R3
+
R2
C8
C7
C15
C6
+
C21
C16
RF
OUTPUT
Z11
Z8
Z1
Z2
Z3
Z4 C4
Z5
Z6
VDD
+
C23
C14
C5
RF
INPUT
+
C22
DUT
Z10
Z13
C24
Z14
Z15
Z7
Z12
C1
C2
C3
Z9
C26
Freescale Semiconductor, Inc...
B2
R4
+
C10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C27
C13
C11
C25
C28
C29
+
C32
+
C30
+
C33
+
C31
C12
1.023″ x 0.082″ Microstrip
0.398″ x 0.082″ Microstrip
0.203″ x 0.082″ Microstrip
0.074″ x 0.082″ Microstrip
0.630″ x 0.084″ Microstrip
0.557″ x 1.030″ x 0.237″ Microstrip Taper
0.103″ x 1.030″ Microstrip
1.280″ x 0.046″ Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
1.280″ x 0.046″ Microstrip
0.090″ x 1.055″ Microstrip
1.125″ x 0.068″ Microstrip
1.125″ x 0.068″ Microstrip
0.505″ x 1.055″ Microstrip
0.898″ x 0.105″ Microstrip
1.133″ x 0.082″ Microstrip
Arlon GX0300 - 55- 22, 0.03″, εr = 2.55
Figure 1. MRF5S19150 Test Circuit Schematic
Table 1. MRF5S19150 Test Circuit Component Designations and Values
Part
Description
B1, B2
Short RF Beads
C1, C2
0.6 – 4.5 Variable Capacitors, Gigatrim
C3
0.8 pF Chip Capacitor, B Case
C4, C5, C13, C14, C24, C25
9.1 pF Chip Capacitors, B Case
C8, C10
1.0 µF, 50 V SMT Tantalum Capacitors
C6, C12, C16, C17, C18, C27, C28, C29
0.1 µF Chip Capacitors, B Case
C7, C11, C15, C26
1000 pF Chip Capacitors, B Case
C9
100 µF, 50 V Electrolytic Capacitor
C23
470 µF, 63 V Electrolytic Capacitor
C19, C20, C21, C22, C30, C31, C32, C33
22 µF, 35 V Tantalum Capacitors
R1
1 kW Chip Resistor
R2
560 kW Chip Resistor
R3, R4
12 W Chip Resistors
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C17 C18
C9
C19 C20 C23
C14
B1 R3
C5
R1
VGG
VDD
C15
R2
C7
C8
C16
C6
C21 C22
C24
C1
C3
C2
Freescale Semiconductor, Inc...
C10
B2
MRF5S19150
Rev 4
C11
R4
C12
CUT OUT AREA
C4
C32 C33
C26
C27
C13
C25
C30 C31
C28 C29
Figure 2. MRF5S19150 Test Circuit Component Layout
MRF5S19150R3 MRF5S19150SR3
4
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TYPICAL CHARACTERISTICS
Gps
35
13
η
30
12
25
VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1400 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
11
10
20
−30
IRL
9
8
−35
IM3
7
6
ACPR
5
1900
−40
1.228 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
−45
−50
1920
1940
1960
1980
−55
2020
2000
−10
−20
−30
−40
−50
−60
IRL, INPUT RETURN LOSS (dB)
14
η, DRAIN
EFFICIENCY (%)
40
IM3 (dBc), ACPR (dBc)
G ps , POWER GAIN (dB)
15
Figure 3. 2 - Carrier N - CDMA Broadband Performance
−15
IDQ = 2100 mA
G ps , POWER GAIN (dB)
15
1700 mA
1400 mA
14
1050 mA
13
700 mA
12
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
11
1
10
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
16
−20
−25
−40
700 mA
−45
1050 mA
1
100
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation versus
Output Power
58
3rd Order
−35
5th Order
−45
7th Order
−50
VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1400 mA
Two−Tone Measurements, Center Frequency = 1960 MHz
−60
0.1
1400 mA
−50
−25
−55
1700 mA
−35
59
−40
IDQ = 2100 mA
−30
−20
−30
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
−55
Pout , OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
Freescale Semiconductor, Inc...
f, FREQUENCY (MHz)
10
1
P3dB = 53.71 dBm (234.96 W)
57
56
55
P1dB = 53.01 dBm (199.99 W)
54
53
52
51
VDD = 28 Vdc, IDQ = 1400 mA
Pulsed CW, 8 µsec (on), 1 msec (off)
Center Frequency = 1960 MHz
50
49
35
36
37
38
39
40
41
42
43
44
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
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45
MRF5S19150R3 MRF5S19150SR3
5
Freescale Semiconductor, Inc.
45
−25
IM3
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
40
35
−30
−35
η
30
25
IM3 (dBc), ACPR (dBc)
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
−40
−45
20
ACPR
15
−50
−55
Gps
10
5
−60
−65
0
−70
10
1
Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power
Gain, Drain Efficiency versus Output Power
0
109
MTBF FACTOR (HOURS X AMPS2)
1.2288 MHz
Channel BW
−10
−20
−IM3 @
1.2288 MHz
Integrated BW
−30
+IM3 @
1.2288 MHz
Integrated BW
−40
(dB)
Freescale Semiconductor, Inc...
Pout, OUTPUT POWER (WATTS) AVG., N−CDMA
−50
−60
−70
−ACPR @ 30 kHz
Integrated BW
+ACPR @ 30 kHz
Integrated BW
−80
107
106
100
−90
−100
−7.5
108
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (°C)
−6
−4.5
−3
−1.5
0
1.5
3
4.5
f, FREQUENCY (MHz)
Figure 9. 2 - Carrier N - CDMA Spectrum
6
7.5
This above graph displays calculated MTBF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by ID2 for MTBF in a particular application.
Figure 10. MTBF Factor versus Junction Temperature
MRF5S19150R3 MRF5S19150SR3
6
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Zo = 10 Ω
f = 1990 MHz
Zload
f = 1930 MHz
f = 1930 MHz
Freescale Semiconductor, Inc...
Zsource
f = 1990 MHz
VDD = 28 V, IDQ = 1400 mA, Pout = 32 W Avg.
f
MHz
Zload
Ω
Zsource
Ω
1930
1.89 - j5.24
1.06 - j1.58
1960
1.64 - j5.29
0.88 - j1.37
1990
1.3 - j5.49
0.90 - j1.21
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 11. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
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MRF5S19150R3 MRF5S19150SR3
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NOTES
MRF5S19150R3 MRF5S19150SR3
8
MOTOROLA RF DEVICE DATA
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NOTES
MOTOROLA RF DEVICE DATA
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MRF5S19150R3 MRF5S19150SR3
9
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Freescale Semiconductor, Inc...
NOTES
MRF5S19150R3 MRF5S19150SR3
10
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PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
M
B
(FLANGE)
3
K
2
bbb
D
T A
M
B
M
M
M
bbb
M
T A
B
M
ccc
M
Freescale Semiconductor, Inc...
N
ccc
M
T A
B
M
R
(INSULATOR)
M
T A
(LID)
B
M
S
(LID)
M
aaa
M
T A
B
M
M
(INSULATOR)
M
H
C
F
E
T
A
A
SEATING
PLANE
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465B - 03
ISSUE B
NI - 880
MRF5S19150R3
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
K
2
bbb
M
D
T A
M
B
M
bbb
M
T A
M
B
M
T A
M
B
R
(INSULATOR)
ccc
M
N
ccc
M
M
T A
M
M
B
S
(LID)
aaa
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
C
F
E
T
A
A
(FLANGE)
MOTOROLA RF DEVICE DATA
SEATING
PLANE
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465C - 02
ISSUE A
NI - 880S
MRF5S19150SR3
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MOTOROLA RF DEVICE DATA
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