MOTOROLA MRF654 Rf power transistor npn silicon Datasheet

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by MRF654/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
• Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 15 W
Minimum Gain = 7.8 dB
Efficiency = 55%
15 W, 470 MHz
RF POWER
TRANSISTOR
NPN SILICON
• Built–In Matching Network for Broadband Operation
• Gold Metallized, Emitter Ballasted for Long Life and Reliability
• Capable of 20:1 VSWR Load Mismatch at 15.5 V Supply Voltage
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CASE 244–04, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
16
Vdc
Collector–Base Voltage
VCBO
36
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
4.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
44
0.25
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Symbol
Max
Unit
RθJC
4.0
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V(BR)CEO
16
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V(BR)CES
36
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
ICES
—
—
2.0
mAdc
Characteristic
OFF CHARACTERISTICS
Collector–Cutoff Current
(VCE = 15 Vdc, VBE = 0)
(continued)
REV 6
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1994
MRF654
1
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
20
—
120
—
Cob
—
31
45
pF
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 15 W, f = 512 MHz)
Gpe
7.8
8.8
—
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 15 W, f = 512 MHz)
η
55
63
—
%
Load Mismatch Stress
(VCC = 15.5 Vdc, f = 512 MHz, Pin = 3.0 W,
VSWR = 20:1, All Phase Angles)
ψ
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
JP1
No Degradation in Output Power
L1
L4
B
B
+
VCC
+
C6
C7
C8
+
L2
C9
L3
C10
C11
–
SOCKET
C2
C5
C1
Z1
Z2
Z3
Z4
Z5
Z6
D.U.T.
C3
C1, C5 — 68 pF Mini–Unelco
C2, C3 — 33 pF, Mini–Unelco
C4 — 47 pF, Mini–Unelco
C6, C11 — 10 µF, 25 V Tantalum
C7, C10 — 0.1 µF, Ceramic
C8, C9 — 91 pF, Mini–Unelco
L1, L4 — 4–1/2 Turns, #18 AWG, Enamel Covered, 0.16″ ID
C4
L2, L3 — 2 Turns, #18 AWG Enamel Covered, 0.16″ ID
B — Ferrite Bead, Ferroxcube 56–590–65–3B
Z1 – Z6 — See PCB Artwork
PCB — 1/32″ G–10, εr = 4.5 @ UHF
Socket — See Socket Drawings
JP1 — Jumper, #14 AWG w/Banana Plugs
Figure 1. 440 – 512 MHz Broadband Test Circuit
MRF654
2
MOTOROLA RF DEVICE DATA
20
Pin = 2.5 W
470 MHz
21
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
f = 440 MHz
512 MHz
16
15
1.5 W
12
512 MHz
9
440 MHz
VCC = 12.5 Vdc
470 MHz
3
1
2
3
0.75 W
8
4
VCC = 12.5 Vdc
0
440
4
460
480
500
520
Pin, INPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
14
1.5 W
12
Pout
0.75 W
6
fo = 512 MHz
6
8
10
12
14
16
60%
10
50%
6
INPUT VSWR 1.5:1
1.4:1
Pin = 2 W
VCC = 12.5 Vdc
2
0
70%
ηc
440
460
VCC, SUPPLY VOLTAGE (VOLTS)
1.2:1
480
500
η c , COLLECTOR EFFICIENCY
18
18
VSWR
Pin = 2.5 W
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
24
1.0:1
520
f, FREQUENCY (MHz)
Figure 4. Power Output versus Supply Voltage
Figure 5. Typical Broadband Circuit Performance
VCC = 12.5 Vdc, Pout = 15 W
Zin
512
490
470
f = 440 MHz
Zo = 10 Ω
ZOL*
512
490
f
MHz
Zin
Ohms
ZOL*
Ohms
440
470
490
512
2.7 + j3.0
2.7 + j3.2
2.7 + j3.6
2.5 + j3.9
2.6 – j0.5
2.6 – j0.1
2.6 + j0.2
2.6 + j0.4
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
ZOL* = given output power, voltage and frequency.
470
f = 440 MHz
Figure 6. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF654
3
PACKAGE DIMENSIONS
2
3
D
1
4
K
M
T
F
A
J
SEATING PLANE
U
P
S
C
8–32 NC 2A
WRENCH FLAT
E
DIM
A
B
C
D
E
G
J
K
M
P
S
T
U
STYLE 1:
PIN 1.
2.
3.
4.
B
MILLIMETERS
MIN
MAX
7.06
7.26
6.20
6.50
14.99
16.51
5.46
5.96
1.40
1.65
1.52
–––
0.08
0.17
11.05
–––
45_NOM
–––
1.27
3.00
3.25
1.40
1.77
2.92
3.68
INCHES
MIN
MAX
0.278
0.286
0.244
0.256
0.590
0.650
0.215
0.235
0.055
0.065
0.060
–––
0.003
0.007
0.435
–––
45 _NOM
–––
0.050
0.118
0.128
0.055
0.070
0.115
0.145
EMITTER
BASE
EMITTER
COLLECTOR
CASE 244–04
ISSUE J
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MRF654
4
◊
*MRF654/D*
MRF654/D
MOTOROLA RF DEVICE
DATA
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