Freescale MRF6S21190H Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF6S21190H
Rev. 1, 3/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S21190HR3
MRF6S21190HSR3
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1600 mA, Pout = 54 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 29%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 175 Watts CW
Output Power
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Designed for Digital Predistortion Error Correction Systems
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2110 - 2170 MHz, 54 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF6S21190HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF6S21190HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
CW Operation @ TC = 25°C
Derate above 25°C
TJ
200
°C
CW
175
1
W
W/°C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 85°C, 120 W CW
Case Temperature 83°C, 56 W CW
RθJC
0.29
0.30
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21190HR3 MRF6S21190HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 420 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 4.2 Adc)
VDS(on)
0.12
0.21
0.31
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.8
—
pF
Output Equivalent Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Cout
—
185
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
526
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 54 W Avg., f = 2112.5 MHz and f =
2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
14.5
16
17.5
dB
Drain Efficiency
ηD
26
29
—
%
PAR
5.5
6.1
—
dB
ACPR
—
- 38
- 35
dBc
IRL
—
- 13
-8
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 2110 - 2170 MHz Bandwidth
Video Bandwidth @ 175 W PEP Pout where IM3 = - 30 dBc
VBW
(Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW
—
50
—
frequency - IMD3 @ 100 kHz <1 dBc (both sidebands)
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 54 W Avg.
GF
—
0.16
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 175 W CW
Φ
—
0.52
—
°
Delay
—
2.1
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 175 W CW,
f = 2140 MHz
ΔΦ
—
28
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.016
—
dB/°C
Average Group Delay @ Pout = 175 W CW, f = 2140 MHz
1. Part internally matched both on input and output.
MRF6S21190HR3 MRF6S21190HSR3
2
RF Device Data
Freescale Semiconductor
B1
VBIAS
+
+
C4
R1
C8
C7
R2
C6
C9
C10
+
C11
C12
VSUPPLY
+
C13
C3
Z7
Z6
RF
INPUT
Z1
Z2
Z3
Z4
Z10
Z9
Z11
Z5
C2
Z8
C1
DUT
+
C5
Z1
Z2
Z3
Z4
Z5
Z6
Z7, Z8
RF
OUTPUT
Z13
Z12
0.744″
0.632″
0.400″
0.042″
0.322″
0.313″
0.123″
x 0.084″
x 0.084″
x 0.450″
x 0.580″
x 0.580″
x 0.040″
x 0.121″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13
PCB
C14
C15
C16
+
C17
VSUPPLY
+
C18
0.145″ x 1.320″ Microstrip
0.508″ x 0.320″ Microstrip
0.429″ x 0.279″ Microstrip
0.322″ x 0.084″ Microstrip
0.735″ x 0.084″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF6S21190HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S21190HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short Ferrite Bead
2743019447
Fairrite
C1, C4, C5
8.2 pF Chip Capacitors
ATC100B8R2JT500XT
ATC
C2
47 pF Chip Capacitor
ATC100B470JT500XT
ATC
C3
10 pF Chip Capacitor
ATC100B100JT500XT
ATC
C6
56 pF Chip Capacitor
ATC100B560JT500XT
ATC
C7, C9, C14
0.1 μF Chip Capacitors
CDR33BX104AKYS
Kemet
C8
10 μF, 50 V Electrolytic Capacitor
EMVY500ADA100MF55G
Nippon Chemi - Con
C10, C15
10 μF Chip Capacitors
GRM55DR61H106KA88
Murata
C11, C12, C16, C17
22 μF Tantalum Capacitors
T491X226K035AT
Kemet
C13, C18
220 μF, 50 V Electrolytic Capacitors
EMVY500ADA221MJA0G
Nippon Chemi - Con
R1
1.0 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF6S21190HR3 MRF6S21190HSR3
RF Device Data
Freescale Semiconductor
3
R2
R1
C9 C10
C6
C12
B1
C13
C3
C4
C7
C11
CUT OUT AREA
C8
C1
C2
C17
C5
MRF6S21190H/HS Rev. 0
C14 C15
C16
C18
Figure 2. MRF6S21190HR3(HSR3) Test Circuit Component Layout
MRF6S21190HR3 MRF6S21190HSR3
4
RF Device Data
Freescale Semiconductor
18
32
ηD
Gps, POWER GAIN (dB)
17.5
30
17
16.5
26
Gps
16
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
15.5
15
14.5
28
VDD = 28 Vdc, Pout = 54 W (Avg.), IDQ = 1600 mA
IRL
0
−4
−0.5
−8
−1
−1.5
PARC
−2
14
13.5
2060
2080
2100
2120
2140
2160
2180
2200
−12
−16
−20
−2.5
2220
−24
IRL, INPUT RETURN LOSS (dB)
34
PARC (dB)
18.5
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
40
Gps
38
16
15.5
ηD
36
15
14.5
IRL
VDD = 28 Vdc, Pout = 86 W (Avg.), IDQ = 1600 mA
Single−Carrier W−CDMA, 3.84 MHz Channel Banwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
14
−5
−2
−2.5
13.5 PARC
−3
2080
2100
2120
2140
2160
2180
2200
−10
−15
−20
−3.5
13
12.5
2060
34
−4
2220
−25
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
16.5
42
PARC (dB)
17
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 54 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 86 Watts Avg.
18
IDQ = 2400 mA
Gps, POWER GAIN (dB)
17
2000 mA
1600 mA
16
15
1200 mA
14
800 mA
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
13
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−20
IDQ = 800 mA
−30
1200 mA
2400 mA
−40
2000 mA
1600 mA
−50
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
200
1
10
100
200
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21190HR3 MRF6S21190HSR3
RF Device Data
Freescale Semiconductor
5
−20
VDD = 28 Vdc, IDQ = 1600 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−40
3rd Order
−50
5th Order
−60
7th Order
−70
1
100
10
VDD = 28 Vdc, Pout = 175 W (PEP), IDQ = 1600 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
−20
IM3−U
−30
IM3−L
IM5−U
−40
IM5−L
IM7−L
−50
IM7−U
−60
1
200
100
10
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
1
45
Ideal
0
40
−1
35
−1 dB = 43.79 W
−2
30
−2 dB = 65.39 W
−3
−4
−5
20
25
−3 dB = 85.07 W
ηD
Actual
VDD = 28 Vdc, IDQ = 1600 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
30
40
50
60
70
ηD, DRAIN EFFICIENCY (%)
−30
−10
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
20
15
90
80
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
19
17
60
−30_C
25_C
17
85_C
25_C
16
50
TC = −30_C
40
30
85_C
15
20
14
VDD = 28 Vdc
IDQ = 1600 mA
f = 2140 MHz
ηD
13
1
10
100
10
0
200
Gps, POWER GAIN (dB)
Gps
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
18
16
32 V
28 V
15
14
IDQ = 1600 mA
f = 2140 MHz
VDD = 24 V
13
0
100
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
200
MRF6S21190HR3 MRF6S21190HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 54 W Avg., and ηD = 29%.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
1
−40
Input Signal
−50
0.1
(dB)
PROBABILITY (%)
−30
−60
0.01
−70
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
0
2
4
6
−80
−ACPR in 3.84 MHz
Integrated BW
−90
8
10
−ACPR in 3.84 MHz
Integrated BW
−100
PEAK−TO−AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−110
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 14. Single - Carrier W - CDMA Spectrum
MRF6S21190HR3 MRF6S21190HSR3
RF Device Data
Freescale Semiconductor
7
f = 2220 MHz
Zo = 10 Ω
Zload
f = 2060 MHz
Zsource
f = 2060 MHz
f = 2220 MHz
VDD = 28 Vdc, IDQ = 1600 mA, Pout = 54 W Avg.
f
MHz
Zsource
W
Zload
W
2060
7.001 - j7.706
2.628 + j0.118
2080
6.859 - j7.408
2.602 + j0.415
2100
6.710 - j7.052
2.604 + j0.672
2120
6.573 - j6.707
2.566 + j0.901
2140
6.446 - j6.355
2.536 + j1.175
2160
6.339 - j5.987
2.538 + j1.411
2180
6.251 - j5.653
2.547 + j1.654
2200
6.170 - j5.272
2.533 + j1.892
2220
6.138 - j4.974
2.508 + j2.119
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21190HR3 MRF6S21190HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
M
B
(FLANGE)
3
K
2
bbb
M
D
T A
B
M
M
(INSULATOR)
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
N
R
ccc
M
T A
M
B
S
(LID)
aaa
M
T A
M
(LID)
M
(INSULATOR)
B
M
H
C
E
T
A
(FLANGE)
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
2
bbb
bbb
M
M
D
T A
T A
M
M
B
B
M
M
(INSULATOR)
M
T A
M
B
R
ccc
M
N
ccc
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
CASE 465B - 03
ISSUE D
NI - 880
MRF6S21190HR3
B
K
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
T A
M
S
(LID)
aaa
M
B
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
F
E
T
A
A
(FLANGE)
SEATING
PLANE
CASE 465C - 02
ISSUE D
NI - 880S
MRF6S21190HSR3
MRF6S21190HR3 MRF6S21190HSR3
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Feb. 2008
• Initial Release of Data Sheet
1
Mar. 2008
• Added Fig. 12, MTTF versus Junction Temperature, p. 7
MRF6S21190HR3 MRF6S21190HSR3
10
RF Device Data
Freescale Semiconductor
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MRF6S21190HR3 MRF6S21190HSR3
Document
Number:
RF
Device
Data MRF6S21190H
Rev. 1, 3/2008
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