Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0286 Features Description • Cascadable 50 Ω Gain Block The MSA-0286 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. • 3 dB Bandwidth: DC to 2.5 GHz • 12.0 dB Typical Gain at 1.0␣ GHz • Unconditionally Stable (k>1) • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Surface Mount Semiconductors”. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block C block 3 IN 1 2 5965-9564E OUT MSA Vd = 5 V 6-286 86 Plastic Package ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. MSA-0286 Absolute Maximum Ratings Absolute Maximum[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature 60 mA 325 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 105°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 9.5 mW/°C for TC > 116°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP Parameters and Test Conditions: Id = 25 mA, ZO = 50 Ω Power Gain (|S21| 2) ∆GP Gain Flatness f3 dB 3 dB Bandwidth VSWR f = 0.1 GHz f = 1.0 GHz f = 0.1 to 1.6 GHz Units Min. Typ. 10.0 12.5 12.0 dB dB ± 0.6 GHz 2.5 Input VSWR f = 0.1 to 3.0 GHz 1.5:1 Output VSWR f = 0.1 to 3.0 GHz 1.4:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 4.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 17.0 tD Group Delay f = 1.0 GHz psec 140 Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 4.0 5.0 Max. 6.0 –8.0 Note: 1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current is on the following page. Part Number Ordering Information Part Number MSA-0286-TR1 MSA-0286-BLK No. of Devices 1000 100 Container 7" Reel Antistatic Bag For more information, see “Tape and Reel Packaging for Semiconductor Devices”. 6-287 MSA-0286 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 25 mA) S11 S21 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 .10 .10 .10 .09 .08 .08 .06 .08 .14 .21 .29 .36 .50 171 161 144 129 119 108 111 141 150 142 132 121 101 12.5 12.5 12.4 12.2 12.1 11.9 11.3 10.5 9.6 8.6 7.5 6.4 4.1 4.22 4.20 4.16 4.09 4.01 3.91 3.67 3.35 3.01 2.68 2.37 2.09 1.61 175 170 159 149 139 129 106 84 67 48 30 15 –12 –18.5 –18.3 –18.2 –18.0 –18.0 –17.4 –16.5 –15.7 –14.8 –14.3 –14.0 –13.5 –13.3 .119 .121 .122 .126 .127 .135 .149 .164 .182 .194 .200 .211 .216 1 3 6 6 9 8 12 11 9 5 1 –3 –12 .16 .16 .15 .15 .14 .14 .11 .11 .12 .13 .14 .16 .20 –5 –11 –24 –36 –48 –62 –99 –141 –176 155 140 134 132 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) TC = +85°C TC = +25°C 30 T = –25°C C 12 10 Id = 18 mA Id = 25 mA Id = 40 mA 6 20 10 Gain Flat to DC 0 0.3 0.5 1.0 3.0 6.0 0 1 2 12 3 4 5 6 NF (dB) P1 dB (dBm) 7.0 6.5 I d = 25 mA 6.0 I d = 18 mA I d = 25 mA I d = 40 mA 2 I d = 18 mA 5.5 1.0 2.0 4.0 6 5 P1 dB 4 5 4 3 –25 0 +25 +55 +85 TEMPERATURE (°C) 8 0.5 6 Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=25mA. 7.5 0.2 0.3 7 Vd (V) I d = 40 mA 6 7 Figure 2. Device Current vs. Voltage. FREQUENCY (GHz) 0 0.1 8 3 0 Figure 1. Typical Power Gain vs. Frequency. 4 GP NF 2 10 12 8 4 0.1 13 11 P1 dB (dBm) 8 I d (mA) G p (dB) G p (dB) 40 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. 6-288 NF (dB) 14 86 Plastic Package Dimensions 0.51 ± 0.13 (0.020 ± 0.005) 45° RF INPUT 1 GROUND 1.52 ± 0.25 (0.060 ± 0.010) 4 RF OUTPUT AND DC BIAS A02 GROUND C L 3 2.34 ± 0.38 (0.092 ± 0.015) 2 2.67 ± 0.38 (0.105 ± 0.15) 5° TYP. 0.66 ± 0.013 (0.026 ± 0.005) 0.203 ± 0.051 (0.006 ± 0.002) 8° MAX 0° MIN 2.16 ± 0.13 (0.085 ± 0.005) 0.30 MIN (0.012 MIN) DIMENSIONS ARE IN MILLIMETERS (INCHES) 6-289