OKI MSC23V47207TD 4,194,304-word x 72-bit dynamic ram module : fast page mode type Datasheet

This version: Apr.26. 1999
Semiconductor
MSC23V47207TD-xxBS18
4,194,304-Word x 72-Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
DESCRIPTION
The MSC23V47207TD-xxBS18 is a 4,194,304-word x 72-bit CMOS dynamic random access memory module which
is composed of eighteen 16Mb(4Mx4) DRAMs in TSOP packages mounted with eighteen decoupling capacitors.
This is an 168-pin dual in-line memory module. This module supports any application where high density and large
capacity of storage memory are required.
FEATURES
· 4,194,304-word x 72-bit organization
· 168-pin Dual In-line Memory Module
· Gold tab
· Single 3.3V power supply, ±0.3V tolerance
· Input
: LVTTL compatible
· Output
: LVTTL compatible, 3-state
· Refresh : 2048cycles/ 32ms
· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
· Fast page mode, read modify write capability
· Multi-bit test mode capability
· Serial Presence Detect
PRODUCT FAMILY
tRAC
tAA
tCAC
tOEA
Cycle
Time
(Min.)
MSC23V47207TD-50BS18
50ns
25ns
13ns
13ns
90ns
6480mW
MSC23V47207TD-60BS18
60ns
30ns
15ns
15ns
110ns
5832mW
MSC23V47207TD-70BS18
70ns
35ns
20ns
20ns
130ns
5184mW
Access Time (Max.)
Family
Power Dissipation (Max.)
Operating
Standby
32.4mW
Semiconductor
MSC23V47207TD
MODULE OUTLINE
MSC23V47207TD-xxBS18
(Unit : mm)
4.00Max.
133.35±0.7 *1
131.35 TYP
25.40±0.12
17.78±0.1
3.0±0.1
2 - R2.0
2 - φ3.0±0.1
A
B
C
1
4.0Min.
84
11.43±0.05
36.83±0.05
54.61±0.05
127.35±0.1
133.35±0.12
R1.0
1.0±0.03
2.0±0.1
2.0±0.1
6.35±0.05
6.35±0.05
Detail A
Detail B
Note:
1. Tolerance over 19.78mm from bottom edge is ±0.7.
2.54 MIN
3.12±0.1
3.175±0.13
3.12±0.1
4.175±0.13
0.25 MAX
R1.0
1.27±0.1
1.27±0.03
Detail C
Semiconductor
MSC23V47207TD
PIN CONFIGURATION
Front Side
Back Side
Front Side
Back Side
Pin No.
1
2
3
Pin Name
VSS
DQ0
DQ1
Pin No.
85
86
87
Pin Name
VSS
DQ32
DQ33
Pin No.
43
44
45
Pin Name
VSS
/OE2
/RAS2
Pin No.
127
128
129
Pin Name
VSS
NC
NC
4
5
DQ2
DQ3
88
89
DQ34
DQ35
46
47
/CAS2
/CAS3
130
131
/CAS6
/CAS7
6
7
VCC
DQ4
90
91
VCC
DQ36
48
49
/WE2
VCC
132
133
NC
VCC
8
9
10
11
DQ5
DQ6
DQ7
DQ8
92
93
94
95
DQ37
DQ38
DQ39
DQ40
50
51
52
53
NC
NC
CB2
CB3
134
135
136
137
NC
NC
CB6
CB7
12
13
14
VSS
DQ9
DQ10
96
97
98
VSS
DQ41
DQ42
54
55
56
VSS
DQ16
DQ17
138
139
140
VSS
DQ48
DQ49
15
16
17
18
DQ11
DQ12
DQ13
VCC
99
100
101
102
DQ43
DQ44
DQ45
VCC
57
58
59
60
DQ18
DQ19
VCC
DQ20
141
142
143
144
DQ50
DQ51
VCC
DQ52
19
20
DQ14
DQ15
103
104
DQ46
DQ47
61
62
NC
NC
145
146
NC
NC
21
22
23
24
25
26
27
28
CB0
CB1
VSS
NC
NC
VCC
/WE0
/CAS0
105
106
107
108
109
110
111
112
CB4
CB5
VSS
NC
NC
VCC
NC
/CAS4
63
64
65
66
67
68
69
70
NC
VSS
DQ21
DQ22
DQ23
VSS
DQ24
DQ25
147
148
149
150
151
152
153
154
NC
VSS
DQ53
DQ54
DQ55
VSS
DQ56
DQ57
29
30
31
/CAS1
/RAS0
/OE0
113
114
115
/CAS5
NC
NC
71
72
73
DQ26
DQ27
VCC
155
156
157
DQ58
DQ59
VCC
32
VSS
116
VSS
74
DQ28
158
DQ60
33
34
35
36
A0
A2
A4
A6
117
118
119
120
A1
A3
A5
A7
75
76
77
78
DQ29
DQ30
DQ31
VSS
159
160
161
162
DQ61
DQ62
DQ63
VSS
37
38
39
40
41
42
A8
A10
NC
VCC
VCC
NC
121
122
123
124
125
126
A9
NC
NC
VCC
NC
NC
79
80
81
82
83
84
NC
NC
NC
SDA
SCL
VCC
163
164
165
166
167
168
NC
NC
SA0
SA1
SA2
VCC
Semiconductor
MSC23V47207TD
Serial PD Matrix
Byte No.
Function described
SPD Value
(Hex)
Note
0
Number of Byte used
80
128 Bytes
1
Total SPD Memory size
08
256 Bytes
2
Memory type
01
Fast Page
3
Number of Rows
0B
11
4
Number of Columns
0B
11
5
Number of Banks
01
1
6
Module Data Width
48
72
7
Module Data Width Continued
00
0
8
Supply Voltage
01
LVTTL
32
50ns
3C
60ns
-70
46
70ns
-50
0D
13ns
0F
15ns
14
20ns
-50
9
-60
10
-60
/RAS Access Time
/CAS Access Time
-70
11
DIMM Configuration type
02
ECC
12
Refresh Rate/Type
00
Normal Refresh
13
Primary DRAM Width
04
x4
14
Error Checking DRAM Width
04
x4
Superset Information
00
Reserved
SPD Data Revision Code
01
1
15-61
62
-50
63
-60
33
Checksum for Byte 0-62
-70
3F
4E
64-127
Reserved
00
128-255
Unused Storage Location (Reserved)
FF
Semiconductor
MSC23V47207TD
BLOCK DIAGRAM
/OE0
/WE0
/OE2
/WE2
/RAS0
/CAS0
/RAS2
/CAS4
DQ0
DQ1
DQ2
DQ3
/CAS /RAS /WE /OE
DQ
DQ
D0
DQ
DQ
DQ32
DQ33
DQ34
DQ35
/CAS /RAS /WE /OE
DQ
DQ
D9
DQ
DQ
DQ4
DQ5
DQ6
DQ7
/CAS /RAS /WE /OE
DQ
DQ
D1
DQ
DQ
DQ36
DQ37
DQ38
DQ39
/CAS /RAS /WE /OE
DQ
DQ
D10
DQ
DQ
/CAS1
/CAS5
DQ8
DQ9
DQ10
DQ11
/CAS /RAS /WE /OE
DQ
DQ
D2
DQ
DQ
DQ40
DQ41
DQ42
DQ43
/CAS /RAS /WE /OE
DQ
DQ
D11
DQ
DQ
DQ12
DQ13
DQ14
DQ15
/CAS /RAS /WE /OE
DQ
DQ
D3
DQ
DQ
DQ44
DQ45
DQ46
DQ47
/CAS /RAS /WE /OE
DQ
DQ
D12
DQ
DQ
CB0
CB1
CB2
CB3
/CAS /RAS /WE /OE
DQ
DQ
D4
DQ
DQ
CB4
CB5
CB6
CB7
/CAS /RAS /WE /OE
DQ
DQ
D13
DQ
DQ
/CAS2
/CAS6
DQ16
DQ17
DQ18
DQ19
/CAS /RAS /WE /OE
DQ
DQ
D5
DQ
DQ
DQ48
DQ49
DQ50
DQ51
/CAS /RAS /WE /OE
DQ
DQ
D14
DQ
DQ
DQ20
DQ21
DQ22
DQ23
/CAS /RAS /WE /OE
DQ
DQ
D6
DQ
DQ
DQ52
DQ53
DQ54
DQ55
/CAS /RAS /WE /OE
DQ
DQ
D15
DQ
DQ
/CAS3
/CAS7
DQ24
DQ25
DQ26
DQ27
/CAS /RAS /WE /OE
DQ
DQ
D7
DQ
DQ
DQ56
DQ57
DQ58
DQ59
/CAS /RAS /WE /OE
DQ
DQ
D16
DQ
DQ
DQ28
DQ29
DQ30
DQ31
/CAS /RAS /WE /OE
DQ
DQ
D8
DQ
DQ
DQ60
DQ61
DQ62
DQ63
/CAS /RAS /WE /OE
DQ
DQ
D17
DQ
DQ
A0-A10
A0-A10 : D0-D17
SCL
VCC
VSS
Serial PD
SCL
SDA
D0-D17
C1-C18
D0-D17
A0 A1 A2
SA0 SA1 SA2
SDA
Semiconductor
MSC23V47207TD
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
VIN, VOUT
-0.5 to 4.6
V
Voltage on VCC Supply Relative to VSS
VCC
-0.5 to 4.6
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD *
18
W
Operating Temperature
TOPR
0 to 70
°C
Storage Temperature
TSTG
-40 to 125
°C
Voltage on Any Pin Relative to VSS
* Ta = 25°C
Recommended Operating Conditions
( Ta = 0°C to 70°C )
Parameter
Symbol
Min.
Typ.
Max.
Unit
VCC
3.0
3.3
3.6
V
VSS
0
0
0
V
Input High Voltage
VIH
2.0
-
VCC+0.3
V
Input Low Voltage
VIL
-0.3
-
0.8
V
Power Supply Voltage
Capacitance
( VCC = 3.3V ±0.3V, Ta = 25°C, f = 1 MHz )
Parameter
Symbol
Typ.
Max.
Unit
Input Capacitance (A0 - A10)
CIN1
-
122
pF
Input Capacitance (/RAS0, /RAS2, /WE0, /WE2, /OE0, /OE2)
CIN2
-
73
pF
Input Capacitance (/CAS0 - /CAS7)
CIN3
-
28
pF
I/O Capacitance (DQ0 - DQ63, CB0 - CB7)
CI/O
-
16
pF
Semiconductor
MSC23V47207TD
DC Characteristics
(VCC = 3.3V ±0.3V, Ta = 0°C to 70°C )
Parameter
Symbol
Condition
-50
-60
-70
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Output High Voltage
VOH
IOH = -2.0mA
2.4
VCC
2.4
VCC
2.4
VCC
V
Output Low Voltage
VOL
IOL = 2.0mA
0
0.4
0
0.4
0
0.4
V
Input Leakage Current
ILI
0V ≤ VIN ≤ VCC+0.3V;
All other pins not
under test = 0V
-180
180
-180
180
-180
180
µA
Output Leakage Current
ILO
DQ disable
0V ≤ VOUT ≤ VCC
-10
10
-10
10
-10
10
µA
Average Power
Supply Current
(Operating)
ICC1
/RAS, /CAS cycling,
tRC = Min.
-
1800
-
1620
-
1440
mA
/RAS, /CAS = VIH
-
36
-
36
-
36
mA
/RAS, /CAS
≥ VCC -0.2V
-
9
-
9
-
9
mA
Note
1, 2
Power Supply Current
(Standby)
ICC2
Average Power
Supply Current
(/RAS only refresh)
ICC3
/RAS cycling,
/CAS = VIH,
tRC = Min.
-
1800
-
1620
-
1440
mA
1, 2
Average Power
Supply Current
(/CAS before /RAS refresh)
ICC6
/RAS cycling,
/CAS before /RAS
-
1800
-
1620
-
1440
mA
1, 2
Average Power
Supply Current
(Fast Page Mode)
ICC7
/RAS = VIL,
/CAS cycling,
tPC = Min.
-
1350
-
1260
-
1170
mA
1, 3
Notes: 1. ICC Max. is specified as ICC for output open condition.
2. The address can be changed once or less while /RAS = VIL.
3. The address can be changed once or less while /CAS = VIH.
1
Semiconductor
MSC23V47207TD
AC Characteristics (1/2)
(VCC = 3.3V ±0.3V, Ta = 0°C to 70°C ) Note: 1, 2, 3, 11, 12
Parameter
Symbol
-50
-60
-70
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Note
Random Read or Write Cycle Time
tRC
90
-
110
-
130
-
ns
Read Modify Write Cycle Time
tRWC
131
-
155
-
185
-
ns
Fast Page Mode Cycle Time
tPC
35
-
40
-
45
-
ns
Fast Page Mode Read Modify Write Cycle Time
tPRWC
76
-
85
-
100
-
ns
Access Time from /RAS
tRAC
-
50
-
60
-
70
ns
4, 5, 6
Access Time from /CAS
tCAC
-
13
-
15
-
20
ns
4, 5
Access Time from Column Address
tAA
-
25
-
30
-
35
ns
4, 6
Access Time from /CAS Precharge
tCPA
-
30
-
35
-
40
ns
4
Access Time from /OE
tOEA
-
13
-
15
-
20
ns
4
Output Low Impedance Time from /CAS
tCLZ
0
-
0
-
0
-
ns
4
/CAS to Data Output Buffer Turn-off Delay Time
tOFF
0
13
0
15
0
20
ns
7
/OE to Data Output Buffer Turn-off Delay Time
tOEZ
0
13
0
15
0
20
ns
7
Transition Time
tT
3
50
3
50
3
50
ns
3
Refresh Period
tREF
-
32
-
32
-
32
ms
/RAS Precharge Time
tRP
30
-
40
-
50
-
ns
/RAS Pulse Width
tRAS
50
10K
60
10K
70
10K
ns
/RAS Pulse Width (Fast Page Mode)
tRASP
50
100K
60
100K
70
100K
ns
/RAS Hold Time
tRSH
13
-
15
-
20
-
ns
/RAS Hold Time referenced to /OE
tROH
13
-
15
-
20
-
ns
/CAS Precharge Time (Fast Page Mode)
tCP
7
-
10
-
10
-
ns
/CAS Pulse Width
tCAS
13
10K
15
10K
20
10K
ns
/CAS Hold Time
tCSH
50
-
60
-
70
-
ns
/CAS to /RAS Precharge Time
tCRP
5
-
5
-
5
-
ns
/RAS Hold Time from /CAS Precharge
tRHCP
30
-
35
-
40
-
ns
/RAS to /CAS Delay Time
tRCD
17
37
20
45
20
50
ns
5
/RAS to Column Address Delay Time
tRAD
12
25
15
30
15
35
ns
6
Row Address Set-up Time
tASR
0
-
0
-
0
-
ns
Row Address Hold Time
tRAH
7
-
10
-
10
-
ns
Column Address Set-up Time
tASC
0
-
0
-
0
-
ns
Column Address Hold Time
tCAH
7
-
10
-
15
-
ns
Column Address to /RAS Lead Time
tRAL
25
-
30
-
35
-
ns
Read Command Set-up Time
tRCS
0
-
0
-
0
-
ns
Read Command Hold Time
tRCH
0
-
0
-
0
-
ns
8
Read Command Hold Time referenced to /RAS
tRRH
0
-
0
-
0
-
ns
8
Semiconductor
MSC23V47207TD
AC Characteristics (2/2)
(VCC = 3.3V ±0.3V, Ta = 0°C to 70°C ) Note: 1, 2, 3, 11, 12
Parameter
Symbol
-50
-60
-70
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Note
Write Command Set-up Time
tWCS
0
-
0
-
0
-
ns
9
Write Command Hold Time
tWCH
7
-
10
-
15
-
ns
Write Command Pulse Width
tWP
7
-
10
-
10
-
ns
/OE Command Hold Time
tOEH
13
-
15
-
20
-
ns
Write Command to /RAS Lead Time
tRWL
13
-
15
-
20
-
ns
Write Command to /CAS Lead Time
tCWL
13
-
15
-
20
-
ns
Data-in Set-up Time
tDS
0
-
0
-
0
-
ns
10
Data-in Hold Time
tDH
7
-
10
-
15
-
ns
10
/OE to Data-in Delay Time
tOED
13
-
15
-
20
-
ns
/CAS to /WE Delay Time
tCWD
36
-
40
-
50
-
ns
9
Column Address to /WE Delay Time
tAWD
48
-
55
-
65
-
ns
9
/RAS to /WE Delay Time
tRWD
73
-
85
-
100
-
ns
9
/CAS Precharge /WE Delay Time
tCPWD
53
-
60
-
70
-
ns
9
/CAS Active Delay Time from /RAS Precharge
tRPC
5
-
5
-
5
-
ns
/RAS to /CAS Set-up Time (/CAS before /RAS)
tCSR
10
-
10
-
10
-
ns
/RAS to /CAS Hold Time (/CAS before /RAS)
tCHR
10
-
10
-
10
-
ns
/WE to /RAS Precharge Time (/CAS before /RAS)
tWRP
10
-
10
-
10
-
ns
/WE Hold Time from /RAS (/CAS before /RAS)
tWRH
10
-
10
-
10
-
ns
/RAS to /WE Set-up Time (Test Mode)
tWTS
10
-
10
-
10
-
ns
/RAS to /WE Hold Time (Test Mode)
tWTH
10
-
10
-
10
-
ns
Semiconductor
MSC23V47207TD
Notes: 1. A start-up delay of 200µs is required after power-up, followed by a minimum of eight initialization cycles
(/RAS only refresh or /CAS before /RAS refresh) before proper device operation is achieved.
2. The AC characteristics assume tT = 5ns.
3. VIH(Min.) and VIL(Max.) are reference levels for measuring input timing signals. Transition times (tT) are
measured between VIH and VIL.
4. This parameter is measured with a load circuit equivalent to 1 TTL load and 100pF.
The output timing reference levels are VOH = 2.0V and VOL = 0.8V.
5. Operation within the tRCD(Max.) limit ensures that tRAC(Max.) can be met.
tRCD(Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD(Max.) limit, then
the access time is controlled by tCAC.
6. Operation within the tRAD(Max.) limit ensures that tRAC(Max.) can be met.
tRAD(Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD(Max.) limit, then
the access time is controlled by tAA.
7. tOFF(Max.) and tOEZ(Max.) define the time at which the output achieves the open circuit condition and are
not referenced to output voltage levels.
8. tRCH or tRRH must be satisfied for a read cycle.
9. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are included in the data
sheet as electrical characteristics only. If tWCS ≥ tWCS(Min.), then the cycle is an early write cycle and the
data out will remain open circuit (high impedance) throughout the entire cycle. If tCWD ≥ tCWD(Min.), tRWD
≥ tRWD(Min.), tAWD ≥ tAWD(Min.) and tCPWD ≥ tCPWD(Min.), then the cycle is a read modify write cycle and
data out will contain data read from the selected cell; if neither of the above sets of conditions is satisfied,
then the condition of the data out (at access time) is indeterminate.
10. These parameters are referenced to the /CAS leading edge in an early write cycle, and to the /WE
leading edge in an /OE control write cycle, or a read modify write cycle.
11. The test mode is initiated by performing a /WE and /CAS before /RAS refresh cycle. This mode is
latched and remains in effect until the exit cycle is generated. The test mode specified in this data sheet
is a 4-bit parallel test function. CA0 and CA1 are not used. In a read cycle, if all internal bits are equal,
the DQ pin will indicate a high level. If any internal bits are not equal, the DQ pin will indicate a low levels.
The test mode is cleared and the memory device returned to its normal operating state by performing a
/RAS only refresh cycle or a /CAS before /RAS refresh cycle.
12. In a test mode read cycle, the value of access time parameters is delayed for 5ns for the specified value.
These parameters should be specified in test mode cycle by adding the above value to the specified
value in this data sheet.
Similar pages