MSC2712GT1G, MSC2712YT1G General Purpose Amplifier Transistor NPN Surface Mount www.onsemi.com Features SC−59 CASE 318D STYLE 1 • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAMS 12G MG G MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc IC(P) 200 mAdc Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to +150 °C Collector Current − Continuous Collector Current − Peak 12M, 12Y = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 12Y MG G 1 BASE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 EMITTER ORDERING INFORMATION Device Package Shipping† MSC2712GT1G SC−59 (Pb−Free) 3000 / Tape & Reel MSC2712YT1G SC−59 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 February, 2015 − Rev. 7 1 Publication Order Number: MSC2712GT1/D MSC2712GT1G, MSC2712YT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 7.0 − Vdc Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO − 0.1 mAdc Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) ICEO − − − 0.1 2.0 1.0 mAdc mAdc mAdc DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE MSC2712GT1G MSC2712YT1G Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Current −Gain − Bandwidth Product (IC = 1 mA, VCE = 10.0 V, f = 10 MHz) − 200 120 400 240 − 0.5 50 − fT Vdc MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. www.onsemi.com 2 MSC2712GT1G, MSC2712YT1G TYPICAL ELECTRICAL CHARACTERISTICS 1000 6.0 mA 5.0 mA 240 2.0 mA 3.0 mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 280 200 1.0 mA 160 120 0.5 mA 80 IB = 0.2 mA TA = 100°C 25°C −25°C 100 40 TA = 25°C 0 0 1 2 3 VCE = 1.0 V 10 4 5 6 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN TA = 100°C 25°C −25°C 100 VCE = 6.0 V VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) Figure 2. DC Current Gain 1000 1 1 IC/IB = 10 TA = 100°C 25°C 0.1 −25°C 0.01 10 100 1000 1 10 IC, COLLECTOR CURRENT (mA) 100 1000 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain Figure 4. VCE(sat) versus IC 10 10,000 COMMON EMITTER VCE = 6 V IB, BASE CURRENT (mA) BASE−EMITTER SATURATION VOLTAGE (V) 1000 IC, COLLECTOR CURRENT (mA) Figure 1. Collector Saturation Voltage 10 100 1 TA = 25°C IC/IB = 10 0.1 TA = 100°C 25°C 1000 −25°C 100 10 1 0.1 1 10 100 1000 0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VBE, BASE−EMITTER VOLTAGE (V) Figure 5. VBE(sat) versus IC Figure 6. Base−Emitter Voltage www.onsemi.com 3 0.9 1 MSC2712GT1G, MSC2712YT1G TYPICAL ELECTRICAL CHARACTERISTICS 10 IC, COLLECTOR CURRENT (A) NPN 100 ms 10 ms 1 ms 1 Thermal Limit 0.1 0.01 0.001 0.1 Single Pulse Test at TA = 25°C 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 7. NPN Safe Operating Area www.onsemi.com 4 100 MSC2712GT1G, MSC2712YT1G PACKAGE DIMENSIONS SC*59 CASE 318D*04 ISSUE H D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 1 DIM A A1 b c D E e L HE E 2 b e C A MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR L A1 MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb *Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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