OKI MSM5116160F-70JS 1,048,576-word ã 16-bit dynamic ram : fast page mode type Datasheet

FEDD5116160F-02
1Semiconductor
MSM5116160F
This version: August. 2002
Previous version : Sep..2001
1,048,576-Word × 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM5116160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM5116160F achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal
CMOS process. The MSM5116160F is available in a 42-pin plastic SOJ or 50/44-pin plastic TSOP.
FEATURES
· 1,048,576-word × 16-bit configuration
· Single 5V power supply, ±10% tolerance
· Input : TTL compatible, low input capacitance
· Output : TTL compatible, 3-state
· Refresh : 4096 cycles/64ms
· Fast page mode, read modify write capability
· CAS before RAS refresh, hidden refresh, RAS-only refresh capability
· Packages
42-pin 400mil plastic SOJ
(SOJ42-P-400-1.27)
(Product : MSM5116160F-xxJS)
50/44-pin 400mil plastic TSOP (TSOPII50/44-P-400-0.80-K) (Product : MSM5116160F-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Family
MSM5116160F
tRAC
tAA
tCAC
tOEA
Cycle Time
(Min.)
50ns
60ns
70ns
25ns
30ns
35ns
13ns
15ns
20ns
13ns
15ns
20ns
90ns
110ns
130ns
Power Dissipation
Operating
(Max.)
495mW
468mW
440mW
Standby
(Max.)
5.5mW
1/15
FEDD5116160F-02
1Semiconductor
MSM5116160F
PIN CONFIGURATION (TOP VIEW)
VCC 1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
VCC 6
DQ5 7
DQ6 8
DQ7 9
DQ8 10
NC 11
NC 12
WE 13
RAS 14
A11R 15
A10R 16
A0 17
A1 18
A2 19
A3 20
VCC 21
42 VSS
41 DQ16
40 DQ15
39 DQ14
38 DQ13
37 VSS
36 DQ12
35 DQ11
34 DQ10
33 DQ9
32 NC
31 LCAS
VCC 1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
VCC 6
DQ5 7
DQ6 8
DQ7 9
DQ8 10
NC 11
50 VSS
49 DQ16
NC 15
NC 16
WE 17
RAS 18
A11R 19
A10R 20
A0 21
A1 22
A2 23
A3 24
VCC 25
36 NC
35 LCAS
48 DQ15
47 DQ14
46 DQ13
45 VSS
44 DQ12
43 DQ11
42 DQ10
41 DQ9
40 NC
30 UCAS
29 OE
28 A9R
27 A8R
26 A7
25 A6
24 A5
23 A4
22 VSS
42-Pin Plastic
SOJ
34 UCAS
33 OE
32 A9R
31 A8R
30 A7
29 A6
28 A5
27 A4
26 VSS
50/44-Pin Plastic TSOP
(K Type)
Pin Name
Function
A0–A7
A8R-A11R
Address Input
RAS
Row Address Strobe
LCAS
Lower Byte Column Address Strobe
UCAS
DQ1–DQ16
Upper Byte Column Address Strobe
OE
Data Input/Data Output
Output Enable
WE
VCC
VSS
NC
Power Supply (5V)
Ground (0V)
No Connection
Write Enable
Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must
be provided to every VSS pin.
2/15
FEDD5116160F-02
1Semiconductor
MSM5116160F
BLOCK DIAGRAM
WE
RAS
I/O
Controller
LCAS
UCAS
I/O
Controller
8
8
4
Row
Address
Buffers
8
Output
Buffers
8
Input
Buffers
8
8
Input
Buffers
8
8
Output
Buffers
8
DQ1-DQ8
Column
Address
Buffers
8
Internal
Address
Counter
A0-A7
A8R-A11R
OE
Timing
Generator
Refresh
Control Clock
12
Row
Decoders
Column Decoders
Sense Amplifiers
Word
Memory
Drivers
Cells
16
I/O
Selector
16
DQ9-DQ16
8
VCC
On Chip
VBB Generator
On Chip
IVCC Generator
VSS
FUNCTION TABLE
Input Pin
DQ Pin
Function Mode
RAS
LCAS
UCAS
WE
OE
DQ1-DQ8
DQ9-DQ16
H
*
*
*
*
High-Z
High-Z
Standby
L
H
H
*
*
High-Z
High-Z
Refresh
L
L
H
H
L
DOUT
High-Z
Lower Byte Read
L
H
L
H
L
High-Z
DOUT
Upper Byte Read
L
L
L
H
L
DOUT
DOUT
Word Read
L
L
H
L
H
DIN
Don’t Care
Lower Byte Write
L
H
L
L
H
Don’t Care
DIN
Upper Byte Write
L
L
L
L
H
DIN
DIN
Word Write
L
L
L
H
H
High-Z
High-Z

* : “H” or “L”
3/15
FEDD5116160F-02
1Semiconductor
MSM5116160F
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
–0.5 to VCC+ 0.5
V
Voltage VCC Supply relative to VSS
VCC
–0.5 to 7
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD*
1
W
Operating Temperature
Topr
0 to 70
°C
Storage Temperature
Tstg
–55 to 150
°C
*: Ta = 25°C
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Parameter
Power Supply Voltage
Symbol
Min.
Typ.
Max.
Unit
VCC
4.5
5.0
5.5
V
VSS
0
0
0
Input High Voltage
VIH
2.4

Input Low Voltage
VIL
− 0.5*2

V
*1
VCC + 0.5
0.8
V
V
Notes: *1. The input voltage is VCC + 2.0V when the pulse width is less than 20ns (the pulse width is with respect
to the point at which VCC is applied).
*2. The input voltage is VSS − 2.0V when the pulse width is less than 20ns (the pulse width respect to the
point at which VSS is applied).
PIN CAPACITANCE
(Vcc = 5V ± 10%, Ta = 25°C, f = 1 MHz)
Parameter
Symbol
Min.
Max.
Unit
CIN1
—
5
pF
(RAS, LCAS, UCAS, WE, OE)
CIN2
—
7
pF
Output Capacitance (DQ1 - DQ16)
CI/O
—
7
pF
Input Capacitance (A0 – A7, A8 – A11R)
Input Capacitance
4/15
FEDD5116160F-02
1Semiconductor
MSM5116160F
DC CHARACTERISTICS
(VCC = 5V ± 10%, Ta = 0 to 70°C)
Parameter
Symbol
Condition
Max.
Min.
Max.
2.4
VCC
2.4
VCC
2.4
VCC
V
0
0.4
0
0.4
0
0.4
V
All other pins not
under test = 0V
− 10
10
− 10
10
− 10
10
µA
DQ disable
− 10
10
− 10
10
− 10
10
µA

90

85

80
mA
1,2
RAS, CAS = VIH

2

2

2
RAS, CAS
≥ VCC − 0.2V


1
1

mA
1
1

90

85

80
mA
1,2

5

5

5
mA
1

90

85

80
mA
1,2

85

80

75
mA
1,3
Output Low Voltage
VOL
IOL = 4.2mA
0V ≤ VI ≤ 6.5V;
Input Leakage
Current
ILI
Output Leakage
Current
ILO
Average Power
Supply Current
ICC1
(Operating)
ICC2
(Standby)
ICC3
Average Power
Supply Current
(Fast Page Mode)
RAS, CAS cycling,
tRC = Min.
CAS = VIH,
tRC = Min.
RAS = VIH,
ICC5
(Standby)
(CAS before RAS
Refresh)
0V ≤ VO ≤ VCC
RAS cycling,
(RAS-only Refresh)
Average Power
Supply Current
Unit Note
Min.
IOH = −5.0mA
Power Supply
Current
MSM5116160
F-70
Max.
VOH
Average Power
Supply Current
MSM5116160
F-60
Min.
Output High Voltage
Power Supply
Current
MSM5116160
F-50
CAS = VIL,
DQ = enable
ICC6
RAS = cycling,
CAS before RAS
RAS = VIL,
ICC7
CAS cycling,
tPC = Min.
Notes: 1. ICC Max. is specified as ICC for output open condition.
2. The address can be changed once or less while RAS = VIL.
3. The address can be changed once or less while CAS = VIH.
5/15
FEDD5116160F-02
1Semiconductor
MSM5116160F
AC CHARACTERISTICS (1/2)
(VCC = 5V ± 10%, Ta = 0 to 70°C) Note1,2,3
MSM5116160
F-50
MSM5116160
F-60
MSM5116160
F-70
Min.
Max.
Min.
Max.
Min.
Max.
tRC
90

110

130

ns
tRWC
131

155

185

ns
tPC
35

40

45

ns
Fast Page Mode Read Modify Write
tPRWC
Cycle Time
76

85

100

ns
Access Time from RAS
tRAC

50

60

70
ns
4, 5, 6
Access Time from CAS
tCAC

13

15

20
ns
4, 5
Access Time from Column Address
tAA

25

30

35
ns
4, 6
Access Time from CAS Precharge
tCPA

30

35

40
ns
4, 12
Access Time from OE
tOEA

13

15

20
ns
4
Output Low Impedance Time from
CAS
tCLZ
0

0

0

ns
4
CAS to Data Output Buffer Turnoff Delay Time
tOFF
0
13
0
15
0
20
ns
7
OE to Data Output Buffer Turn-off
Delay Time
tOEZ
0
13
0
15
0
20
ns
7
Transition Time
tT
3
50
3
50
3
50
ns
3
Refresh Period
tREF

64

64

64
ms
RAS Precharge Time
tRP
30

40

50

ns
RAS Pulse Width
tRAS
50
10,000
60
10,000
70
10,000
ns
RAS Pulse Width (Fast Page Mode) tRASP
50
100,000
60
100,000
70
100,000
ns
RAS Hold Time
tRSH
13

15

20

ns
RAS Hold Time referenced to OE
tROH
13

15

20

ns
CAS Precharge Time
(Fast Page Mode)
tCP
7

10

10

ns
CAS Pulse Width
tCAS
13
10,000
15
10,000
20
10,000
ns
CAS Hold Time
tCSH
50

60

70

ns
CAS to RAS Precharge Time
tCRP
5

5

5

ns
12
RAS Hold Time from CAS Precharge tRHCP
30

35

40

ns
12
RAS to CAS Delay Time
tRCD
17
37
20
45
20
50
ns
5
RAS to Column Address Delay Time
tRAD
12
25
15
30
15
35
ns
6
Row Address Set-up Time
tASR
0

0

0

ns
Parameter
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
Symbol
Unit
Note
14
6/15
FEDD5116160F-02
1Semiconductor
MSM5116160F
AC CHARACTERISTICS (2/2)
(VCC = 5V ± 10%, Ta = 0 to 70°C) Note1,2,3
Parameter
Symbol
MSM5116160
F-50
MSM5116160
F-60
MSM5116160
F-70
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Note
Row Address Hold Time
tRAH
7

10

10

ns
Column Address Set-up Time
tASC
0

0

0

ns
11
Column Address Hold Time
tCAH
7

10

15

ns
11
Column Address to RAS Lead Time
tRAL
25

30

35

ns
Read Command Set-up Time
tRCS
0

0

0

ns
11
Read Command Hold Time
tRCH
0

0

0

ns
8, 11
Read Command Hold Time
referenced to RAS
tRRH
0

0

0

ns
8
Write Command Set-up Time
tWCS
0

0

0

ns
9, 11
Write Command Hold Time
tWCH
7

10

15

ns
11
Write Command Pulse Width
tWP
7

10

10

ns
OE Command Hold Time
tOEH
13

15

20

ns
Write Command to RAS Lead Time
tRWL
13

15

20

ns
Write Command to CAS Lead Time
tCWL
13

15

20

ns
13
Data-in Set-up Time
tDS
0

0

0

ns
10, 11
Data-in Hold Time
tDH
7

10

15

ns
10, 11
OE to Data-in Delay Time
tOED
13

15

20

ns
CAS to WE Delay Time
tCWD
36

40

50

ns
9
Column Address to WE Delay Time
tAWD
48

55

65

ns
9
RAS to WE Delay Time
tRWD
73

85

100

ns
9
tCPWD
53

60

70

ns
9
CAS Active Delay Time from RAS
Precharge
tRPC
5

5

5

ns
11
RAS to CAS Set-up Time
(CAS before RAS)
tCSR
10

10

10

ns
11
RAS to CAS Hold Time
(CAS before RAS)
tCHR
10

10

10

ns
12
CAS Precharge WE Delay Time
7/15
FEDD5116160F-02
1Semiconductor
MSM5116160F
Notes: 1. A start-up delay of 200µs is required after power-up, followed by a minimum of eight initialization
cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved.
2. The AC characteristics assume tT = 5ns.
3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals. Transition times (tT)
are measured between VIH and VIL.
4. -50 is measured with a load circuit equivalent to 2 TTL load and 50pF, and -60/-70 is measured with a
load circuit equivalent to 2 TTL load and 100pF.
5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met.
tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (Max.) limit,
then the access time is controlled by tCAC.
6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met.
tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (Max.) limit,
then the access time is controlled by tAA.
7. tOFF (Max.) and tOEZ (Max.) define the time at which the output achieved the open circuit condition and
are not referenced to output voltage levels.
8. tRCH or tRRH must be satisfied for a read cycle.
9. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are included in the data
sheet as electrical characteristics only. If tWCS ≥ tWCS (Min.), then the cycle is an early write cycle and
the data out will remain open circuit (high impedance) throughout the entire cycle. If tCWD ≥ tCWD
(Min.), tRWD ≥ tRWD(Min.), tAWD ≥ tAWD (Min.) and tCPWD ≥ tCPWD (Min.), then the cycle is a read modify
write cycle and data out will contain data read from the selected cell; if neither of the above sets of
conditions is satisfied, then the condition of the data out (at access time) is indeterminate.
10. These parameters are referenced to the UCAS and LCAS, leading edges in an early write cycle, and to
the WE leading edge in an OE control write cycle, or a read modify write cycle.
11. These parameters are determined by the falling edge of either UCAS or LCAS, whichever is earlier.
12. These parameters are determined by the rising edge of either UCAS or LCAS, whichever is later.
13. tCWL should be satisfied by both UCAS and LCAS.
14. tCP is determined by the time both UCAS and LCAS are high.
8/15
FEDD5116160F-02
1Semiconductor
MSM5116160F
TIMING CHART
Read Cycle
RAS
tRC
tRAS
VIH
tRP
VIL
tCSH
tCRP
CAS
WE
tCRP
tRSH
tCAS
VIH
tRAD
VIL
tRAL
tASR
Address
tRCD
VIH
VIL
tRAH
tASC
Row
tCAH
Column
tRRH
tRCS
VIH
tAA
VIL
tRCH
tROH
tOEA
OE
VIH
VIL
tCAC
tRAC
DQ
tOFF
tOEZ
tCLZ
VOH
Valid Data-out
Open
VOL
“H” or “L”
Write Cycle (Early Write)
RAS
tRC
tRAS
VIH
tRP
VIL
tCSH
tCRP
CAS
tRAD
VIL
tRAL
VIH
VIL
tRAH
tASC
Row
tCAH
Column
tCWL
tWCS
tWP
WE
OE
DQ
tCRP
tRSH
tCAS
VIH
tASR
Address
tRCD
tWCH
VIH
VIL
tRWL
VIH
VIL
VIH
VIL
tDS
tD
Valid Data-in
Open
“H” or “L”
9/15
FEDD5116160F-02
1Semiconductor
MSM5116160F
Read Modify Write Cycle
tRWC
tRAS
RAS
VIH
tRP
VIL
tCSH
tCRP
CAS
tRAD
VIL
VIH
VIL
tCRP
tRSH
tCAS
VIH
tASR
Address
tRCD
tRAH
tASC
Row
tCWL
tRWL
tCAH
Colum
tRCS
tCWD
tWP
tRWD
WE
OE
VIH
VIL
tAWD
tAA
tOEH
tOE
VIH
tOED
VIL
tCAC
tDH
tRAC
DQ
VI/OH
VI/OL
tOEZ
tCLZ
Valid
Data-out
tDS
Valid
Data-in
“H” or “L”
10/15
FEDD5116160F-02
1Semiconductor
MSM5116160F
Fast Page Mode Read Cycle
tRASP
RAS
VIH
VIL
tRCD
tCRP
CAS
tCP
tCP
tRAD
tCSH
VIL
VIH
VIL
Row
tASC
tCAH
Column
tCAH
tASC
Column
tRCH
tCAH
Column
tRCS
tRCH
tRCS
tRCH
VIH
VIL
tAA
tAA
tAA
tOEA
tRRH
tOEA
VIH
VIL
tCPA
tOFF
tOEZ
tRAC
tCAC
DQ
tCRP
tRAL
tRAH tASC
tOEA
OE
tRSH
tCAS
tCAS
VIH
tRCS
WE
tRHCP
tCAS
tASR
Address
tRP
tPC
tOEZ
Valid
Data-out
Valid
Data-out
VOL
tOFF
tCAC
tOEZ t
CLZ
tCLZ
tCLZ
VOH
tCPA
tOFF
tCAC
Valid
Data-out
“H” or “L”
Fast Page Mode Write Cycle (Early Write)
tRP
tRASP
RAS
VIH
VIL
tCRP
tCP
tRCD
tCP
tCAS
CAS
tCAS
VIH
VIH
VIL
tRAH tASC
Row
tCSH
tCAH
tASC
Column
tCRP
tASC
tRAL
tCAH
Column
tRWL
tWCS
tWCH
tWP
tCWL
tWCS
VIH
tWCH
tWP
tCWL
tWCS
tWP
tWCH
VIL
tDS
VIH
DQ
tCAH
Column
tCWL
WE
tRSH
tCAS
tRAD
VIL
tASR
Address
tRHPC
tPC
VIL
tDH
Valid *
Data-in
tDS
tDH
Valid *
Data-in
tDS
tDH
Valid *
Data-in
Note: OE = “H” or “L”
“H” or “L”
11/15
FEDD5116160F-02
1Semiconductor
MSM5116160F
Fast Page Mode Read Modify Write Cycle
tRASP
tCSH
tPRWC
tRP
tRSH
VIH
RAS
VIL
tRCD
tCP
tCAS
tRAH
tASR
VIH
VIL
tCAH
tRAD
VIL
Address
tCR
tCAS
tCAH
VIH
CAS
tCP
tCAS
tCAH
tCWL
tASC
Row
tASC
Column
Column
tRCS
tPWD
tCWD
tRCS
tASC
tRAL
tCWL
Column
tRCS
tCPWD
tCWL
tCPWD
tCWD
tCWD
tAWD
tAWD
tRWL
VIH
WE
tAWD
VIL
tWP
tRAC
tAA
tDH
tOEA
VIH
OE
tCAC
tAA
VI/OL
Out
tCLZ
tCAC
tDS
tOED
tOEZ
tDS tCAC
Out
In
tDH
tOEA
tOED
tOEZ
tOEZ
VI/OH
DQ
tCPA
tOEA
tOED
VIL
tROH
tDH
tAA
tDS
tWP
tWP
tCPA
In
Out
In
tCLZ
tCLZ
Note: In = Valid Data-in, Out = Valid Data-out
“H” or “L”
RAS-only Refresh Cycle
tRC
tRAS
RAS
VIH
tRP
VIL
tCRP
CAS
Address
DQ
tRPC
VIH
VIL
VIH
VIL
VOH
VOL
tASR
tRA
Row
tOFF
Open
Note: WE, OE = “H” or “L”
“H” or “L”
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MSM5116160F
CAS before RAS Refresh Cycle
tRC
tRP
RAS
tRAS
VIH
VIL
tRPC
tCP
tRP
tCSR
tRPC
tCHR
CAS
VIH
VIL
tOFF
DQ
VOH
Open
VOL
Note: WE, OE, Address = “H” or “L”
“H” or “L”
Hidden Refresh Read Cycle
tRC
RAS
VIH
VIL
tRC
tRAS
tRAS
tCRP
tRCD
tRSH
tRP
tRP
tCHR
CAS
VIH
tRAD
VIL
tASR
Address
VIH
VIL
tRAH
tASC
tCAH
Column
Row
tRCS
WE
tCAC
tRRH
VIH
tRAL
VIL
tAA
tROH
OE
DQ
VIH
VIL
VOH
VOL
tOFF
tOEA
tRAC
tOEZ
tCLZ
Open
Valid Data-out
“H” or “L”
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MSM5116160F
Hidden Refresh Write Cycle
tRC
tRC
tRAS
RAS
tRAS
VIH
VIL
tCRP
tRSH
tRCD
tRP
tRP
tCHR
CAS
VIH
tRAD
VIL
tASR
Address
VIH
VIL
tRA
tRAL
tASC
Row
tCAH
Column
tWCS
WE
OE
DQ
tWCH
VIH
VIL
tWP
VIH
VIL
VIH
VIL
tDS
tDH
Valid Data-in
“H” or “L”
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1Semiconductor
MSM5116160F
NOTICE
1. The information contained herein can change without notice owing to product and/or technical improvements.
Before using the product, please make sure that the information being referred to is up-to-date.
2. The outline of action and examples for application circuits described herein have been chosen as an explanation
for the standard action and performance of the product. When planning to use the product, please ensure that
the external conditions are reflected in the actual circuit, assembly, and program designs.
3. When designing your product, please use our product below the specified maximum ratings and within the
specified operating ranges including, but not limited to, operating voltage, power dissipation, and operating
temperature.
4. Oki assumes no responsibility or liability whatsoever for any failure or unusual or
unexpected operation resulting from misuse, neglect, improper installation, repair, alteration
or accident, improper handling, or unusual physical or electrical stress including, but not
limited to, exposure to parameters beyond the specified maximum ratings or operation
outside the specified operating range.
5. Neither indemnity against nor license of a third party’s industrial and intellectual property right, etc. is granted
by us in connection with the use of the product and/or the information and drawings contained herein. No
responsibility is assumed by us for any infringement of a third party’s right which may result from the use
thereof.
6. The products listed in this document are intended for use in general electronics equipment for commercial
applications (e.g., office automation, communication equipment, measurement equipment, consumer
electronics, etc.). These products are not authorized for use in any system or application that requires special or
enhanced quality and reliability characteristics nor in any system or application where the failure of such
system or application may result in the loss or damage of property, or death or injury to humans.
Such applications include, but are not limited to, traffic and automotive equipment, safety devices, aerospace
equipment, nuclear power control, medical equipment, and life-support systems.
7. Certain products in this document may need government approval before they can be exported to particular
countries. The purchaser assumes the responsibility of determining the legality of export of these products and
will take appropriate and necessary steps at their own expense for these.
8. No part of the contents contained herein may be reprinted or reproduced without our prior permission.
Copyright 2002 Oki Electric Industry Co., Ltd.
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