OKI MSM511664C-70JS 65,536-word x 16-bit dynamic ram : fast page mode type (byte write) Datasheet

E2G0014-17-41
¡ Semiconductor
MSM511664C/CL
¡ Semiconductor
This version:
Jan. 1998
MSM511664C/CL
Previous version: May 1997
65,536-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE)
DESCRIPTION
The MSM511664C/CL is a 65,536-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM511664C/CL achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer
metal CMOS process. The MSM511664C/CL is available in a 40-pin plastic SOJ or 44/40-pin plastic
TSOP. The MSM511664CL (the low-power version) is specially designed for lower-power applications.
FEATURES
• 65,536-word ¥ 16-bit configuration
• Single 5 V power supply, ±10% tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 256 cycles/4 ms, 256 cycles/32 ms (L-version)
• Byte write and fast page mode, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Package options:
40-pin 400 mil plastic SOJ
(SOJ40-P-400-1.27)
(Product : MSM511664C/CL-xxJS)
44/40-pin 400 mil plastic TSOP
(TSOPII44/40-P-400-0.80-K) (Product : MSM511664C/CL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
Access Time (Max.)
tRAC
tAA
tCAC
tOEA
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
MSM511664C/CL-60
60 ns 30 ns 20 ns 20 ns
110 ns
550 mW
MSM511664C/CL-70
70 ns 40 ns 25 ns 25 ns
120 ns
495 mW
MSM511664C/CL-80
80 ns 45 ns 30 ns 30 ns
135 ns
440 mW
5.5 mW/
1.1 mW (L-version)
1/16
¡ Semiconductor
MSM511664C/CL
PIN CONFIGURATION (TOP VIEW)
VCC 1
40 VSS
DQ1 2
39 DQ16
DQ2 3
38 DQ15
DQ3 4
37 DQ14
DQ4 5
36 DQ13
DQ5 6
35 DQ12
DQ6 7
34 DQ11
DQ7 8
33 DQ10
DQ8 9
32 DQ9
NC 10
31 NC
VCC 11
30 VSS
UWE 12
29 CAS
LWE 13
28 OE
RAS 14
27 NC
A0 15
26 NC
A1 16
25 NC
A2 17
24 A7
A3 18
23 A6
A4 19
22 A5
VCC 20
21 VSS
VCC
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
NC
1
2
3
4
5
6
7
8
9
10
44
43
42
41
40
39
38
37
36
35
VSS
DQ16
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
NC
VCC
UWE
LWE
RAS
A0
A1
A2
A3
A4
VCC
13
14
15
16
17
18
19
20
21
22
32
31
30
29
28
27
26
25
24
23
VSS
CAS
OE
NC
NC
NC
A7
A6
A5
VSS
44/40-Pin Plastic TSOP
(K Type)
40-Pin Plastic SOJ
Pin Name
A0 - A7
RAS
Row Address Strobe
CAS
Column Address Strobe
DQ1 - DQ16
Data Input/Data Output
OE
LWE
Note :
Function
Address Input
Output Enable
Lower Byte Write Enable
UWE
Upper Byte Write Enable
VCC
Power Supply (5 V)
VSS
Ground (0 V)
NC
No Connection
The same power supply voltage must be provided to every VCC pin, and the same GND
voltage level must be provided to every VSS pin.
2/16
¡ Semiconductor
MSM511664C/CL
BLOCK DIAGRAM
Timing
Generator
RAS
Timing
Generator
CAS
Column
Address
Buffers
8
8
UWE
LWE
Write
Clock
Generator
Column
Decoders
OE
16
Internal
Address
Counter
A0 - A7
Refresh
Control Clock
Sense
Amplifiers
16
I/O
Selector
Row
Address
Buffers
Row
Decoders
8
Word
Drivers
16
16
16
16
8
Output
Buffers
Input
Buffers
DQ1 - DQ16
16
Memory
Cells
VCC
On Chip
VBB Generator
VSS
FUNCTION TABLE
Input Pin
DQ Pin
Function Mode
RAS
CAS
LWE
UWE
OE
DQ1 - DQ8
DQ9 - DQ16
H
*
H
*
*
*
High-Z
High-Z
Standby
L
High-Z
Refresh
L
L
*
L
High-Z
DOUT
DOUT
Word Read
Lower Byte Write
*
H
*
H
L
L
L
H
H
DIN
L
L
H
L
H
Don't Care
Don't Care
DIN
DIN
Word Write
High-Z
—
L
L
L
L
H
DIN
L
L
H
H
H
High-Z
Upper Byte Write
*: "H" or "L"
3/16
¡ Semiconductor
MSM511664C/CL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
VT
–1.0 to 7.0
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD*
1
W
Operating Temperature
Topr
0 to 70
°C
Storage Temperature
Tstg
–55 to 150
°C
Voltage on Any Pin Relative to VSS
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
(Ta = 0°C to 70°C)
Symbol
Min.
Typ.
Max.
Unit
VCC
4.5
5.0
5.5
V
VSS
0
0
0
V
Input High Voltage
VIH
2.4
—
6.5
V
Input Low Voltage
VIL
–1.0
—
0.8
V
Capacitance
Parameter
Input Capacitance (A0 - A7)
Input Capacitance
(RAS, CAS, UWE, LWE, OE)
Output Capacitance (DQ1 - DQ16)
(VCC = 5 V ±10%, Ta = 25°C, f = 1 MHz)
Symbol
Typ.
Max.
Unit
CIN1
—
7
pF
CIN2
—
7
pF
CI/O
—
7
pF
4/16
¡ Semiconductor
MSM511664C/CL
DC Characteristics
Parameter
(VCC = 5 V ±10%, Ta = 0°C to 70°C)
Symbol
Condition
MSM511664 MSM511664 MSM511664
C/CL-70
C/CL-60
C/CL-80
Unit Note
Min.
Max.
Min.
Max.
Min.
Max.
Output High Voltage
VOH IOH = –2.5 mA
2.4
VCC
2.4
VCC
2.4
VCC
V
Output Low Voltage
VOL IOL = 2.1 mA
0
0.4
0
0.4
0
0.4
V
–10
10
–10
10
–10
10
mA
–10
10
–10
10
–10
10
mA
—
100
—
90
—
80
mA 1, 2
—
2
—
2
—
2
—
1
—
1
—
1
—
200
—
200
—
—
100
—
90
—
5
—
—
100
—
—
0 V £ VI £ 6.5 V;
Input Leakage Current
ILI
All other pins not
under test = 0 V
Output Leakage Current
ILO
Average Power
Supply Current
ICC1
(Operating)
0 V £ VO £ 5.5 V
RAS, CAS cycling,
tRC = Min.
RAS, CAS = VIH
Power Supply
Current (Standby)
ICC2 RAS, CAS
≥ VCC –0.2 V
mA
1
200
mA
1, 5
—
80
mA 1, 2
5
—
5
mA
—
90
—
80
mA 1, 2
95
—
85
—
75
mA 1, 3
300
—
300
—
300
mA
RAS cycling,
Average Power
ICC3 CAS = VIH,
Supply Current
(RAS-only Refresh)
tRC = Min.
RAS = VIH,
Power Supply
Current (Standby)
ICC5 CAS = VIL,
Supply Current
ICC6
(CAS before RAS Refresh)
1
DQ = enable
Average Power
RAS cycling,
CAS before RAS
RAS = VIL,
Average Power
ICC7 CAS cycling,
Supply Current
(Fast Page Mode)
tPC = Min.
tRC = 125 ms,
Average Power
ICC10 CAS before RAS,
Supply Current
(Battery Backup)
Notes : 1.
2.
3.
4.
5.
DQ disable
tRAS £ 1 ms
1, 4,
5
ICC Max. is specified as ICC for output open condition.
The address can be changed once or less while RAS = VIL.
The address can be changed once or less while CAS = VIH.
VCC – 0.2 V £ VIH £ 6.5 V, –1.0 V £ VIL £ 0.2 V.
L-version.
5/16
¡ Semiconductor
MSM511664C/CL
AC Characteristics (1/2)
(VCC = 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3
Parameter
MSM511664 MSM511664 MSM511664
C/CL-60
C/CL-70
C/CL-80
Symbol
Unit Note
Min.
Max.
Min.
Max.
Min.
Max.
tRC
110
—
120
—
135
—
ns
tRWC
—
—
170
—
tPC
155
40
50
—
185
55
—
—
ns
ns
tPRWC
85
—
95
—
100
—
ns
Access Time from RAS
tRAC
—
60
—
70
—
80
ns
4, 5, 6
Access Time from CAS
tCAC
—
20
—
25
—
30
ns
4, 5
Access Time from Column Address
Access Time from CAS Precharge
tAA
tCPA
—
—
30
35
—
—
40
45
—
—
45
50
ns
ns
4, 6
4
Access Time from OE
Output Low Impedance Time from CAS
tOEA
tCLZ
—
0
20
—
—
0
25
—
—
0
30
—
ns
ns
4
4
CAS to Data Output Buffer Turn-off Delay Time
tOFF
20
15
50
4
0
0
3
—
15
50
4
ns
ns
ns
ms
7
15
50
4
0
0
3
—
20
tOEZ
tT
tREF
0
0
3
—
20
OE to Data Output Buffer Turn-off Delay Time
Transition Time
Refresh Period
Refresh Period (L-version)
tREF
—
32
—
32
—
32
ms
RAS Precharge Time
tRP
40
—
40
—
45
—
ns
RAS Pulse Width
tRAS
60
10,000
70
10,000
80
10,000
ns
RAS Pulse Width (Fast Page Mode)
tRASP
60
100,000
70
100,000
80
100,000
ns
RAS Hold Time
tRSH
RAS Hold Time referenced to OE
tROH
20
15
—
—
25
15
—
—
30
15
—
—
ns
ns
CAS Precharge Time (Fast Page Mode)
tCP
10
—
10
—
10
—
ns
CAS Pulse Width
tCAS
20
10,000
25
10,000
30
10,000
ns
CAS Hold Time
tCSH
60
—
80
—
tCRP
5
—
70
5
—
CAS to RAS Precharge Time
—
5
—
ns
ns
RAS Hold Time from CAS Precharge
tRHCP
RAS to CAS Delay Time
tRCD
35
20
—
40
45
20
—
45
50
22
—
50
ns
ns
5
RAS to Column Address Delay Time
tRAD
15
30
15
30
17
35
ns
6
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
Fast Page Mode Read Modify Write
Cycle Time
7
3
Row Address Set-up Time
tASR
0
—
0
—
0
—
ns
Row Address Hold Time
tRAH
10
—
10
—
12
—
ns
Column Address Set-up Time
tASC
0
—
0
—
0
—
ns
Column Address Hold Time
tCAH
10
—
10
—
15
—
ns
Column Address Hold Time from RAS
Column Address to RAS Lead Time
tAR
tRAL
45
30
—
—
45
40
—
—
55
45
—
—
ns
ns
Read Command Set-up Time
tRCS
0
—
0
—
0
—
ns
Read Command Hold Time
tRCH
0
—
0
—
0
—
ns
8
Read Command Hold Time referenced to RAS
tRRH
0
—
0
—
0
—
ns
8
6/16
¡ Semiconductor
MSM511664C/CL
AC Characteristics (2/2)
(VCC = 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3
Parameter
Symbol
MSM511664 MSM511664 MSM511664
C/CL-60
C/CL-70
C/CL-80
Unit Note
Min.
Max.
Min.
Max.
Min.
Max.
Write Command Set-up Time
tWCS
0
—
0
—
0
—
ns
Write Command Hold Time
Write Command Hold Time from RAS
tWCH
tWCR
10
40
—
—
10
45
—
—
15
55
—
—
ns
ns
Write Command Pulse Width
OE Command Hold Time
tWP
tOEH
Write Command to RAS Lead Time
Write Command to CAS Lead Time
tRWL
tCWL
10
10
20
20
—
—
—
—
—
—
15
10
20
—
20
—
—
—
—
ns
ns
ns
—
10
10
20
20
tDS
0
—
0
—
0
—
ns
10
tDH
—
—
—
—
—
—
10
45
15
50
60
95
—
—
—
—
—
—
15
55
15
55
70
ns
ns
ns
ns
ns
ns
10
105
—
—
—
—
—
—
9
Data-in Set-up Time
Data-in Hold Time from RAS
OE to Data-in Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
tDHR
tOED
tCWD
tAWD
RAS to WE Delay Time
tRWD
10
40
15
40
50
80
CAS Precharge WE Delay Time
Data-in Hold Time
9
ns
tCPWD
55
—
70
—
75
—
ns
CAS Active Delay Time from RAS Precharge
tRPC
0
—
0
—
0
—
ns
RAS to CAS Set-up Time (CAS before RAS)
RAS to CAS Hold Time (CAS before RAS)
tCSR
tCHR
5
10
—
—
5
10
—
—
5
10
—
—
ns
ns
9
9
9
7/16
¡ Semiconductor
Notes:
MSM511664C/CL
1. A start-up delay of 100 µs is required after power-up, followed by a minimum of eight
initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device
operation is achieved.
2. The AC characteristics assume tT = 5 ns.
3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals.
Transition times (tT) are measured between VIH and VIL.
4. This parameter is measured with a load circuit equivalent to 1 TTL load and 50 pF.
5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met.
tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified
tRCD (Max.) limit, then the access time is controlled by tCAC.
6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met.
tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified
tRAD (Max.) limit, then the access time is controlled by tAA.
7. tOFF (Max.) and tOEZ (Max.) define the time at which the output achieves the open
circuit condition and are not referenced to output voltage levels.
8. tRCH or tRRH must be satisfied for a read cycle.
9. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are
included in the data sheet as electrical characteristics only. If tWCS ≥ tWCS (Min.), then
the cycle is an early write cycle and the data out will remain open circuit (high
impedance) throughout the entire cycle. If tCWD ≥ tCWD (Min.) , tRWD ≥ tRWD (Min.),
tAWD ≥ tAWD (Min.) and tCPWD ≥ tCPWD (Min.), then the cycle is a read modify write
cycle and data out will contain data read from the selected cell; if neither of the above
sets of conditions is satisfied, then the condition of the data out (at access time) is
indeterminate.
10. These parameters are referenced to the CAS leading edge in an early write cycle, and
to the WE leading edge in an OE control write cycle, or a read modify write cycle.
8/16
E2G0092-17-41E
¡ Semiconductor
MSM511664C/CL
,
,,
,
,,,,
TIMING WAVEFORM
Read Cycle
tRC
tRP
tRAS
RAS
VIH –
VIL –
tAR
tCSH
tCRP
tRCD
VIH –
CAS
VIL –
VIH –
VIL –
tRSH
tCAS
tRAD
tASR
Address
tCRP
tRAH tASC
tRAL
tCAH
Column
Row
tRCS
WE
OE
VIH –
VIL –
tAA
tROH
tOEA
VIH –
VIL –
tCAC
tRAC
DQ
tRCH
tRRH
VOH –
tOEZ
Open
VOL –
tOFF
Valid Data-out
tCLZ
"H" or "L"
Write Cycle (Early Write)
tRC
tRP
tRAS
RAS
VIH –
VIL –
tAR
tCRP
CAS
VIH –
VIL –
WE
VIH –
VIL –
tCSH
tRCD
tRSH
tCAS
tRAD
tRAH
tASR
Address
tCRP
tASC
Row
tCAH
Column
tWCS
tWCH
VIH –
tRWL
VIH –
VIL –
tDS
DQ
tCWL
tWP
VIL –
tWCR
OE
tRAL
VIH –
VIL –
tDHR
tDH
Valid Data-in
Open
"H" or "L"
9/16
,
,,
¡ Semiconductor
MSM511664C/CL
Read Modify Write Cycle
tRWC
tRAS
RAS
VIH –
VIL –
tRP
tAR
tCRP
tCSH
tCRP
tRCD
tRSH
tCAS
VIH –
CAS
VIL –
tASR
VIH –
Address
VIL –
WE
VIH –
VIL –
OE
VIH –
VIL –
tRAH
tASC
tCAH
Column
Row
tRAD
tRWD
tAA
tAWD
tRCS
tOEA
tOED
tCAC
tRAC
DQ
VI/OH–
VI/OL–
tCWL
tRWL
tWP
tCWD
tCLZ
tOEZ
Valid
Data-out
tOEH
tDS
tDH
Valid
Data-in
"H" or "L"
10/16
,,,
,
,,,
¡ Semiconductor
MSM511664C/CL
Fast Page Mode Read Cycle
tRASP
VIH –
RAS V –
IL
VIH –
CAS
VIL –
Address
WE
VIH –
VIL –
tRP
tAR
tCRP
tRHCP
tPC
tRCD
tCP
tASR
tCP
tCAS
tCAS
tRAD
tRAH tASC
tCSH
tCAH
tASC
Column
Row
VIH –
VIL –
tCAC
VOH –
DQ
VOL –
Column
tRCS
tRCH
tRRH
tCPA
tOEA
tOFF
tOEZ
tRCH
tAA
tAA
tCAC
tOEA
tOFF
tCAC
tOEZ
tCLZ
Valid
Data-out
tCLZ
tRCS
tCPA
tOEA
tRAC
tRAL
tCAH
tASC
Column
tAA
VIH –
OE
VIL –
tCAS
tCAH
tRCH
tRCS
tCRP
tRSH
tCLZ
tOFF
tOEZ
Valid
Data-out
Valid
Data-out
"H" or "L"
Fast Page Mode Write Cycle (Early Write)
tRASP
tAR
VIH –
RAS V –
IL
tCRP
VIH –
CAS
VIL –
Address
VIH –
VIL –
tRAH tASC
Row
tWCS
tDS
VIH –
VIL –
tCSH
tCAH
Column
tCWL
tWCH
tWP
tRAD
tRHCP
tRSH
tRCD
VIH –
WE
VIL –
DQ
tPC
tCAS
tASR
tRP
tWCR
tDH
Valid Data-in
tDHR
tCP
tCRP
tCP
tCAS
tASC
tCAH
tASC
Column
tCWL
tWCS
tWCH
tWP
tDS
tDH
Valid
Data-in
tCAS
tCAH
tRAL
Column
tRWL
tCWL
tWCS
tWCH
tWP
tDS
tDH
Valid
Data-in
Note: OE = "H" or "L"
"H" or "L"
11/16
¡ Semiconductor
MSM511664C/CL
,,,
,
,,
,
Fast Page Mode Read Modify Write Cycle
tRASP
VIH –
RAS
VIL –
tAR
tRP
tCSH
tPRWC
tRCD
VIH –
CAS
VIL –
tASC
tCAH
tRAH
VIH –
VIL –
tCRP
tCAS
tASC
tCAH
tCAH
Column
Column
tASC
Column
Row
tRCS
tCPWD
tCWD
tRWD
tCWD
tRCS
V
WE IH –
VIL –
tCWL
tAWD
tCWL
tWP
tDH
VI/OH–
VI/OL –
Out
tCLZ
tOEA
tOED
tOEZ
tCAC
In
tDH
tDS
tOEA
tOEZ
tCAC
tWP
tCPA
tAA
tOED
VIH –
OE V –
IL
tCWL
tROH
tWP
tDH
tDS
tOEA
tRWL
tAWD
tCPA
tAA
tAA
tRAL
tRCS
tCPWD
tCWD
tAWD
tDS
tRAC
DQ
tCP
tCAS
tRAD
tASR
Address
tCP
tCAS
tRSH
Out
tOED
In
tCLZ
tOEZ
tCAC
Out
In
tCLZ
"H" or "L"
RAS-Only Refresh Cycle
tRC
RAS
VIL –
CAS
Address
VIH –
VIL –
VIH –
VIL –
tRP
tRAS
VIH –
tCRP
tASR
tRPC
tRAH
Row
tOFF
DQ
VOH –
VOL –
Open
Note: WE, OE = "H" or "L"
"H" or "L"
12/16
,,
,
,,
¡ Semiconductor
MSM511664C/CL
CAS before RAS Refresh Cycle
tRC
tRP
RAS
VIH –
VIL –
DQ
tRP
tRPC
tRPC
tCSR
tCP
CAS
tRAS
VIH –
VIL –
tCHR
tOFF
VOH –
VOL –
Open
Note: WE, OE, Address = "H" or "L"
"H" or "L"
Hidden Refresh Read Cycle
tRC
tRAS
RAS
VIH –
tRP
tAR
VIH –
VIL –
VIH –
VIL –
tRSH
tRCD
tRAD
tASC
tRAH
tASR
Address
tRAS
tRP
VIL –
tCRP
CAS
tRC
Row
tCHR
tCAH
Column
tRCS
tRAL
VIH –
WE V
IL –
tRRH
tAA
tROH
tOEA
VIH –
OE V
IL –
tRAC
DQ
VOH –
VOL –
tCAC
tCLZ
tOFF
tOEZ
Valid Data-out
"H" or "L"
13/16
,
,,
,
¡ Semiconductor
MSM511664C/CL
Hidden Refresh Write Cycle
tRC
tRP
tRAS
RAS
VIH –
tRP
tAR
VIH –
VIH –
VIL –
tRSH
tRCD
tRAD
tASC
tRAH
VIL –
tASR
Address
tRAS
VIL –
tCRP
CAS
tRC
tCHR
tCAH t
RAL
Column
Row
tWCS
VIH –
WE V
IL –
tWCH
tWP
tWCR
VIH –
OE V
IL –
tDS
V –
DQ IH
VIL –
tDH
Valid Data-in
tDHR
"H" or "L"
14/16
¡ Semiconductor
MSM511664C/CL
PACKAGE DIMENSIONS
(Unit : mm)
SOJ40-P-400-1.27
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
1.70 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
15/16
¡ Semiconductor
MSM511664C/CL
(Unit : mm)
TSOPII44/40-P-400-0.80-K
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
0.49 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
16/16
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