OKI MSM5116800C-50TS-K 2,097,152-word x 8-bit dynamic ram : fast page mode type Datasheet

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E2G0110-18-42
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2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM5116800C is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM5116800C achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM5116800C is available in a 28-pin plastic SOJ or 28-pin plastic TSOP.
FEATURES
• 2,097,152-word ¥ 8-bit configuration
• Single 5 V power supply, ±10% tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 4096 cycles/64 ms
• Fast page mode, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Multi-bit test mode capability
• Package options:
28-pin 400 mil plastic SOJ
(SOJ28-P-400-1.27)
(Product : MSM5116800C-xxJS)
28-pin 400 mil plastic TSOP
(TSOPII28-P-400-1.27-K) (Product : MSM5116800C-xxTS-K)
(TSOPII28-P-400-1.27-L) (Product : MSM5116800C-xxTS-L)
xx indicates speed rank.
PRODUCT FAMILY
Family
Access Time (Max.)
tRAC
tAA
tCAC
tOEA
ar
This version:
Apr. 1998
MSM5116800C
in
¡ Semiconductor
MSM5116800C
¡ Semiconductor
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
MSM5116800C-50
50 ns 25 ns 13 ns 13 ns
90 ns
MSM5116800C-60
60 ns 30 ns 15 ns 15 ns
110 ns
495 mW
MSM5116800C-70
70 ns 35 ns 20 ns 20 ns
130 ns
440 mW
550 mW
5.5 mW
1/16
¡ Semiconductor
MSM5116800C
PIN CONFIGURATION (TOP VIEW)
VCC 1
28 VSS
VCC 1
28 VSS
VSS 28
DQ1 2
27 DQ8
DQ2 3
26 DQ7
DQ3 4
DQ4 5
1 VCC
DQ1 2
27 DQ8
DQ8 27
2 DQ1
DQ2 3
26 DQ7
DQ7 26
3 DQ2
25 DQ6
DQ3 4
25 DQ6
DQ6 25
4 DQ3
24 DQ5
DQ4 5
24 DQ5
DQ5 24
5 DQ4
WE 6
23 CAS
WE 6
23 CAS
CAS 23
6 WE
RAS 7
22 OE
RAS 7
22 OE
OE 22
7 RAS
A11R 8
21 A9R
A11R 8
21 A9R
A9R 21
8 A11R
A10R 9
20 A8
A10R 9
20 A8
A8 20
9 A10R
A0 10
19 A7
A0 10
19 A7
A7 19
10 A0
A1 11
18 A6
A1 11
18 A6
A6 18
11 A1
A2 12
17 A5
A2 12
17 A5
A5 17
12 A2
A3 13
16 A4
A3 13
16 A4
A4 16
13 A3
VCC 14
15 VSS
VCC 14
15 VSS
VSS 15
14 VCC
28-Pin Plastic TSOP
(K Type)
28-Pin Plastic SOJ
Pin Name
A0 - A8,
A9R - A11R
Note :
28-Pin Plastic TSOP
(L Type)
Function
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
DQ1 - DQ8
Data Input/Data Output
OE
Output Enable
WE
Write Enable
VCC
Power Supply (5 V)
VSS
Ground (0 V)
The same power supply voltage must be provided to every VCC pin, and the same GND
voltage level must be provided to every VSS pin.
2/16
¡ Semiconductor
MSM5116800C
BLOCK DIAGRAM
WE
RAS
OE
Timing
Generator
I/O
Controller
CAS
8
Output
Buffers
8
Input
Buffers
8
DQ1 - DQ8
9
Internal
Address
Counter
A0 - A8
9
A9R - A11R
Column
Address
Buffers
3
9
Refresh
Control Clock
Row
Row
Address 12 DecoBuffers
ders
Word
Drivers
Column Decoders
Sense Amplifiers
8
I/O
Selector
8
8
Memory
Cells
VCC
On Chip
VBB Generator
On Chip
IVCC Generator
VSS
3/16
¡ Semiconductor
MSM5116800C
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
–0.5 to VCC + 0.5
V
Voltage on VCC Supply Relative to VSS
VCC
–0.5 to 7
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD*
1
W
Operating Temperature
Topr
0 to 70
°C
Storage Temperature
Tstg
–55 to 150
°C
*: Ta = 25°C
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
Min.
Typ.
Max.
Unit
VCC
4.5
5.0
5.5
V
VSS
0
0
0
V
VIH
2.4
—
VCC + 0.5*1
V
VIL
–0.5*2
—
0.8
V
Notes : *1. The input voltage is VCC + 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which VCC is applied).
*2. The input voltage is VSS – 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which VSS is applied).
Capacitance
(VCC = 5 V ±10%, Ta = 25°C, f = 1 MHz)
Parameter
Symbol
Typ.
Max.
Unit
Input Capacitance
(A0 - A8, A9R - A11R)
CIN1
—
5
pF
Input Capacitance (RAS, CAS, WE, OE)
CIN2
—
7
pF
Output Capacitance (DQ1 - DQ8)
CI/O
—
7
pF
4/16
¡ Semiconductor
MSM5116800C
DC Characteristics
Parameter
(VCC = 5 V ±10%, Ta = 0°C to 70°C)
Symbol
Condition
Output High Voltage
VOH IOH = –5.0 mA
Output Low Voltage
VOL IOL = 4.2 mA
Input Leakage Current
ILI
MSM5116800 MSM5116800 MSM5116800
C-50
C-60
C-70
Unit Note
Min.
Max.
Min.
Max.
Min.
Max.
2.4
0
VCC
2.4
0
VCC
0.4
2.4
0
VCC
0.4
0.4
V
V
–10
10
–10
10
–10
10
mA
–10
10
–10
10
–10
10
mA
—
100
—
90
—
80
mA
1, 2
—
2
—
2
—
2
mA
1
—
1
—
1
—
1
—
100
—
90
—
80
mA
1, 2
—
5
—
5
—
5
mA
1
—
100
—
90
—
80
mA
1, 2
—
100
—
90
—
80
mA
1, 3
0 V £ VI £ 6.5 V;
All other pins not
under test = 0 V
Output Leakage Current
ILO
Average Power
Supply Current
ICC1
(Operating)
Power Supply
Current (Standby)
ICC2
Current (Standby)
(CAS before RAS Refresh)
Average Power
Supply Current
(Fast Page Mode)
tRC = Min.
RAS, CAS = VIH
RAS, CAS
RAS cycling,
tRC = Min.
RAS = VIH,
ICC5 CAS = VIL,
DQ = enable
Average Power
Supply Current
RAS, CAS cycling,
ICC3 CAS = VIH,
(RAS-only Refresh)
Power Supply
0 V £ VO £ VCC
≥ VCC –0.2 V
Average Power
Supply Current
DQ disable
ICC6
RAS cycling,
CAS before RAS
RAS = VIL,
ICC7 CAS cycling,
tPC = Min.
Notes : 1. ICC Max. is specified as ICC for output open condition.
2. The address can be changed once or less while RAS = VIL.
3. The address can be changed once or less while CAS = VIH.
5/16
¡ Semiconductor
MSM5116800C
AC Characteristics (1/2)
(VCC = 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3, 11, 12
Parameter
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
Fast Page Mode Read Modify Write
Cycle Time
Access Time from RAS
Symbol
MSM5116800 MSM5116800 MSM5116800
C-50
C-70
C-60
Unit Note
Min.
Max.
Min.
Max.
Min.
Max.
tRC
tRWC
tPC
90
131
35
—
—
—
110
155
40
—
—
—
130
185
45
—
—
—
ns
ns
ns
tPRWC
76
—
85
—
100
—
ns
tRAC
—
50
—
60
—
70
ns
4, 5, 6
Access Time from CAS
tCAC
Access Time from Column Address
Access Time from CAS Precharge
tAA
tCPA
—
—
13
25
—
—
15
30
—
—
20
35
ns
ns
4, 5
4, 6
—
30
—
35
—
40
ns
4
Access Time from OE
Output Low Impedance Time from CAS
tOEA
tCLZ
—
0
13
—
—
0
15
—
—
0
20
—
ns
ns
4
4
CAS to Data Output Buffer Turn-off Delay Time
OE to Data Output Buffer Turn-off Delay Time
Transition Time
Refresh Period
tOFF
tOEZ
tT
tREF
0
0
3
—
13
0
0
3
—
15
15
50
64
0
0
3
—
20
13
50
64
20
50
64
ns
ns
ns
ms
7
7
3
RAS Precharge Time
tRP
30
—
40
—
50
—
ns
RAS Pulse Width
tRAS
50
10,000
60
10,000
70
10,000
ns
RAS Pulse Width (Fast Page Mode)
tRASP
50
100,000
60
100,000
70
100,000
ns
RAS Hold Time
tRSH
tROH
13
13
—
—
15
15
—
—
20
20
—
—
ns
ns
RAS Hold Time referenced to OE
CAS Precharge Time (Fast Page Mode)
tCP
7
—
10
—
10
—
ns
CAS Pulse Width
tCAS
13
10,000
15
10,000
20
10,000
ns
CAS Hold Time
CAS to RAS Precharge Time
tCSH
tCRP
50
5
—
—
60
5
—
—
70
5
—
—
ns
ns
RAS Hold Time from CAS Precharge
RAS to CAS Delay Time
RAS to Column Address Delay Time
tRHCP
tRCD
tRAD
30
17
12
—
37
25
35
20
15
—
45
30
40
20
15
—
50
35
ns
ns
ns
Row Address Set-up Time
tASR
0
—
0
—
0
—
ns
Row Address Hold Time
tRAH
7
—
10
—
10
—
ns
Column Address Set-up Time
tASC
0
—
0
—
0
—
ns
Column Address Hold Time
Column Address to RAS Lead Time
tCAH
tRAL
7
25
—
—
15
30
—
—
15
35
—
—
ns
ns
Read Command Set-up Time
tRCS
0
—
0
—
0
—
ns
Read Command Hold Time
tRCH
0
—
0
—
0
—
ns
8
Read Command Hold Time referenced to RAS
tRRH
0
—
0
—
0
—
ns
8
5
6
6/16
¡ Semiconductor
MSM5116800C
AC Characteristics (2/2)
(VCC = 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3, 11, 12
Parameter
Symbol
MSM5116800 MSM5116800 MSM5116800
C-50
C-60
C-70
Unit Note
Min. Max.
Min.
Max.
Min.
Max.
tWCS
0
—
0
—
0
—
ns
Write Command Hold Time
tWCH
7
—
10
—
15
—
ns
Write Command Pulse Width
OE Command Hold Time
Write Command to RAS Lead Time
Write Command to CAS Lead Time
tWP
tOEH
tRWL
tCWL
7
13
—
—
10
15
—
—
10
20
—
—
ns
ns
13
13
—
—
15
15
—
—
20
20
—
—
ns
Data-in Set-up Time
Data-in Hold Time
OE to Data-in Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
RAS to WE Delay Time
tDS
tDH
tOED
tCWD
tAWD
tRWD
0
7
13
36
48
73
—
—
—
—
—
—
0
15
15
40
55
85
—
—
—
—
—
—
0
15
20
50
65
100
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
10
10
CAS Precharge WE Delay Time
9
Write Command Set-up Time
9
ns
tCPWD
53
—
60
—
70
—
ns
CAS Active Delay Time from RAS Precharge
tRPC
10
—
10
—
10
—
ns
RAS to CAS Set-up Time (CAS before RAS)
RAS to CAS Hold Time (CAS before RAS)
WE to RAS Precharge Time (CAS before RAS)
WE Hold Time from RAS (CAS before RAS)
RAS to WE Set-up Time (Test Mode)
RAS to WE Hold Time (Test Mode)
tCSR
tCHR
tWRP
tWRH
tWTS
tWTH
10
10
10
10
10
10
—
—
—
—
—
—
10
10
10
10
10
10
—
—
—
—
—
—
10
10
10
10
10
10
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
9
9
9
7/16
¡ Semiconductor
Notes:
MSM5116800C
1. A start-up delay of 200 µs is required after power-up, followed by a minimum of eight
initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device
operation is achieved.
2. The AC characteristics assume tT = 5 ns.
3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals.
Transition times (tT) are measured between VIH and VIL.
4. This parameter is measured with a load circuit equivalent to 2 TTL loads and 100 pF.
5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met.
tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified
tRCD (Max.) limit, then the access time is controlled by tCAC.
6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met.
tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified
tRAD (Max.) limit, then the access time is controlled by tAA.
7. tOFF (Max.) and tOEZ (Max.) define the time at which the output achieves the open
circuit condition and are not referenced to output voltage levels.
8. tRCH or tRRH must be satisfied for a read cycle.
9. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are
included in the data sheet as electrical characteristics only. If tWCS ≥ tWCS (Min.), then
the cycle is an early write cycle and the data out will remain open circuit (high
impedance) throughout the entire cycle. If tCWD ≥ tCWD (Min.) , tRWD ≥ tRWD (Min.),
tAWD ≥ tAWD (Min.) and tCPWD ≥ tCPWD (Min.), then the cycle is a read modify write
cycle and data out will contain data read from the selected cell; if neither of the above
sets of conditions is satisfied, then the condition of the data out (at access time) is
indeterminate.
10. These parameters are referenced to the CAS leading edge in an early write cycle, and
to the WE leading edge in an OE control write cycle, or a read modify write cycle.
11. The test mode is initiated by performing a WE and CAS before RAS refresh cycle.
This mode is latched and remains in effect until the exit cycle is generated.
The test mode specified in this data sheet is a 2-bit parallel test function. CA8 is not
used. In a read cycle, if all internal bits are equal, the DQ pin will indicate a high
level. If any internal bits are not equal, the DQ pin will indicate a low level.
The test mode is cleared and the memory device returned to its normal operating
state by performing a RAS-only refresh cycle or a CAS before RAS refresh cycle.
12. In a test mode read cycle, the value of access time parameters is delayed for 5 ns for the
specified value. These parameters should be specified in test mode cycle by adding the
above value to the specified value in this data sheet.
8/16
E2G0093-17-41F
,,,
,
,,,,
¡ Semiconductor
MSM5116800C
TIMING WAVEFORM
Read Cycle
tRC
tRP
tRAS
RAS
VIH –
VIL –
tCRP
tCSH
tCRP
tRCD
VIH –
CAS
VIL –
tRAD
tASR
Address
VIH –
VIL –
tRSH
tCAS
tRAH tASC
tRAL
tCAH
Column
Row
tRCS
WE
VIH –
VIL –
tAA
tROH
tOEA
VIH –
OE
VIL –
tCAC
tRAC
DQ
tRCH
tRRH
VOH –
tOEZ
Open
VOL –
tOFF
Valid Data-out
tCLZ
"H" or "L"
Write Cycle (Early Write)
tRC
tRP
tRAS
RAS
VIH –
VIL –
tCRP
tCRP
VIH –
CAS
VIL –
WE
OE
VIH –
VIL –
tASC
Row
tCAS
tCAH
tRAL
Column
tWCS
VIH –
tWCH
tCWL
tWP
VIL –
tRWL
VIH –
VIL –
tDS
DQ
tRSH
tRAD
tRAH
tASR
Address
tCSH
tRCD
VIH –
VIL –
tDH
Valid Data-in
Open
"H" or "L"
9/16
,,,
¡ Semiconductor
MSM5116800C
Read Modify Write Cycle
tRWC
tRAS
RAS
VIH –
VIL –
tRP
tCRP
tCSH
tCRP
tRCD
tRSH
tCAS
VIH –
CAS
VIL –
tASR
VIH –
Address
VIL –
WE
VIH –
VIL –
OE
VIH –
VIL –
tRAH
tASC
tCAH
Column
Row
tRAD
tRWD
tAA
tAWD
tRCS
tOEA
tOED
tCAC
tRAC
DQ
VI/OH–
VI/OL–
tCWL
tRWL
tWP
tCWD
tCLZ
tOEZ
Valid
Data-out
tOEH
tDS
tDH
Valid
Data-in
"H" or "L"
10/16
,,,
,
,,,
¡ Semiconductor
MSM5116800C
Fast Page Mode Read Cycle
tRASP
VIH –
RAS V –
IL
VIH –
CAS
VIL –
Address
WE
VIH –
VIL –
tRP
tRHCP
tCRP
tPC
tRCD
tCP
tASR
tCP
tCAS
tCAS
tRAD
tRAH tASC
tCSH
tCAH
tASC
Column
Row
VIH –
VIL –
Column
tRCS
tRCH
tOFF
tOEZ
tRRH
tCPA
tOEA
tCAC
tRCH
tAA
tAA
tRAC
tOEA
tOFF
tCAC
tCAC
tOEZ
tCLZ
Valid
Data-out
tCLZ
tRCS
tCPA
tOEA
VOH –
DQ
VOL –
tRAL
tCAH
tASC
Column
tAA
VIH –
OE
VIL –
tCAS
tCAH
tRCH
tRCS
tCRP
tRSH
tOFF
tCLZ
tOEZ
Valid
Data-out
Valid
Data-out
"H" or "L"
Fast Page Mode Write Cycle (Early Write)
tRASP
VIH –
RAS V –
IL
tCRP
VIH –
CAS
VIL –
Address
VIH –
VIL –
tCAS
tASR
tRAH tASC
Row
tRAD
VIH –
VIL –
tDS
VIH –
DQ
VIL –
tRHCP
tRSH
tRCD
tWCS
WE
tRP
tPC
tCSH
tCAH
Column
tCWL
tWCH
tWP
tDH
Valid Data-in
tCP
tCRP
tCP
tCAS
tASC
tCAH
tASC
Column
tCWL
tWCS
tWCH
tWP
tDS
tDH
Valid
Data-in
tCAS
tCAH
tRAL
Column
tRWL
tCWL
tWCS
tWCH
tWP
tDS
tDH
Valid
Data-in
Note: OE = "H" or "L"
"H" or "L"
11/16
¡ Semiconductor
MSM5116800C
,,,
,
,
,
,
Fast Page Mode Read Modify Write Cycle
tRASP
VIH –
RAS
VIL –
tRP
tCSH
tPRWC
tRCD
VIH –
CAS
VIL –
tASC
tCAH
tRAH
VIH –
VIL –
tCRP
tCAS
tASC
tCAH
tCAH
Column
Column
tASC
Column
Row
tRCS
tCPWD
tCWD
tRWD
tCWD
tRCS
V
WE IH –
VIL –
tCWL
tAWD
tCWL
tWP
tDH
VI/OH–
VI/OL –
Out
tCLZ
tOEA
tOED
tOEZ
tCAC
In
tDH
tDS
tOEA
tOEZ
tCAC
tWP
tCPA
tAA
tOED
VIH –
OE V –
IL
tCWL
tROH
tWP
tDH
tDS
tOEA
tRWL
tAWD
tCPA
tAA
tAA
tRAL
tRCS
tCPWD
tCWD
tAWD
tDS
tRAC
DQ
tCP
tCAS
tRAD
tASR
Address
tCP
tCAS
tRSH
Out
tOED
In
tCLZ
tOEZ
tCAC
Out
In
tCLZ
"H" or "L"
RAS-Only Refresh Cycle
tRC
RAS
CAS
Address
VIL –
VIH –
VIL –
VIH –
VIL –
tRP
tRAS
VIH –
tCRP
tASR
tRPC
tRAH
Row
tOFF
DQ
VOH –
VOL –
Open
Note: WE, OE = "H" or "L"
"H" or "L"
12/16
M
L
K
^
]
\
S
R
Q
P
¡ Semiconductor
MSM5116800C
CAS before RAS Refresh Cycle
tRC
tRP
RAS
tRP
tRAS
VIH –
VIL –
tRPC
tRPC
tCP
CAS
tCSR
tCHR
tWRP
tWRH
VIH –
VIL –
tWRP
,
,,
,
WE
VIH –
VIL –
DQ
VOH –
VOL –
tOFF
Open
Note: OE, Address = "H" or "L"
"H" or "L"
Hidden Refresh Read Cycle
tRC
tRAS
RAS
tRP
VIL –
VIH –
VIL –
VIH –
VIL –
tRSH
tRCD
tRAD
tASC
tRAH
tASR
Address
tRAS
tRP
VIH –
tCRP
CAS
tRC
Row
tCHR
tCAH
Column
tRCS
tRAL
VIH –
WE V
IL –
tRRH
tAA
tROH
tOEA
VIH –
OE V
IL –
tRAC
DQ
VOH –
VOL –
tCAC
tCLZ
tOFF
tOEZ
Valid Data-out
"H" or "L"
13/16
¡ Semiconductor
MSM5116800C
Hidden Refresh Write Cycle
tRC
tRAS
RAS
CAS
Address
VIH –
VIL –
OE
VIH –
VIL –
tASR
tRCD
tRSH
tRAD
tASC
tCAH
tRAH
Row
tCHR
tRAL
Column
tWCH
tWP
VIH –
VIL –
tWRP
tWRH
VIH –
VIL –
tDS
DQ
tRP
,
,,,,
,
VIH –
VIL –
tCRP
tWCS
WE
tRC
tRAS
tRP
VIH –
VIL –
tDH
Valid Data-in
"H" or "L"
Test Mode Initiate Cycle
tRC
tRP
RAS
VIH –
VIL –
tRPC
tCP
CAS
tRAS
tCSR
VIH –
VIL –
tWTS
WE
tCHR
tWTH
VIH –
VIL –
tOFF
DQ
VOH –
VOL –
Open
Note: OE, Address = "H" or "L"
"H" or "L"
14/16
¡ Semiconductor
MSM5116800C
PACKAGE DIMENSIONS
(Unit : mm)
SOJ28-P-400-1.27
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
1.30 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
15/16
¡ Semiconductor
MSM5116800C
(Unit : mm)
TSOPII28-P-400-1.27-K
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
0.51 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
16/16
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