OKI MSM512100L-70SJ 2,097,152-word x 1-bit dynamic ram : fast page mode type Datasheet

E2G0016-17-41
¡ Semiconductor
MSM512100/L
¡ Semiconductor
This version:
Jan. 1998
MSM512100/L
Previous version: May 1997
2,097,152-Word ¥ 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM512100/L is a 2,097,152-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM512100/L achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer
metal CMOS process. The MSM512100/L is available in a 26/20-pin plastic SOJ. The MSM512100L
(the low-power version) is specially designed for lower-power applications.
FEATURES
• 2,097,152-word ¥ 1-bit configuration
• Single 5 V power supply, ±10% tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (L-version)
• Fast page mode, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Multi-bit test mode capability
• Package:
26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM512100/L-xxSJ)
xx indicates speed rank.
PRODUCT FAMILY
Family
Access Time (Max.)
tRAC
tAA
tCAC
tOEA
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
MSM512100/L-60
60 ns 30 ns 15 ns 15 ns
110 ns
440 mW
MSM512100/L-70
70 ns 35 ns 20 ns 20 ns
130 ns
385 mW
MSM512100/L-80
80 ns 40 ns 20 ns 20 ns
150 ns
330 mW
5.5 mW/
0.55 mW (L-version)
1/16
¡ Semiconductor
MSM512100/L
PIN CONFIGURATION (TOP VIEW)
DIN 1
26 VSS
WE 2
25 DOUT
RAS 3
24 CAS
NC 4
23 OE
A10R 5
22 A9
A0 9
18 A8
A1 10
17 A7
A2 11
16 A6
A3 12
15 A5
VCC 13
14 A4
26/20-Pin Plastic SOJ
Pin Name
A0 - A9, A10R
RAS
Function
Address Input
Row Address Strobe
CAS
Column Address Strobe
DIN
Data Input
DOUT
Data Output
OE
Output Enable
WE
Write Enable
VCC
Power Supply (5 V)
VSS
Ground (0 V)
NC
No Connection
2/16
¡ Semiconductor
MSM512100/L
BLOCK DIAGRAM
Timing
Generator
RAS
Timing
Generator
CAS
10
Column
Address
Buffers
10
Column
Decoders
Write
Clock
Generator
WE
OE
Internal
Address
Counter
A0 - A9
10
A10R
1
Row
Address
Buffers
Refresh
Control Clock
11
Row
Decoders
Word
Drivers
Sense
Amplifiers
Memory
Cells
I/O
Selector
Input
Buffer
Output
Buffer
DOUT
DIN
VCC
On Chip
VBB Generator
VSS
3/16
¡ Semiconductor
MSM512100/L
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
VT
–1.0 to 7.0
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD*
1
W
Operating Temperature
Topr
0 to 70
°C
Storage Temperature
Tstg
–55 to 150
°C
Voltage on Any Pin Relative to VSS
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
(Ta = 0°C to 70°C)
Symbol
Min.
Typ.
Max.
Unit
VCC
4.5
5.0
5.5
V
VSS
0
0
0
V
Input High Voltage
VIH
2.4
—
6.5
V
Input Low Voltage
VIL
–1.0
—
0.8
V
Capacitance
(VCC = 5 V ±10%, Ta = 25°C, f = 1 MHz)
Symbol
Typ.
Max.
Unit
CIN1
—
6
pF
Input Capacitance (RAS, CAS, WE, OE)
CIN2
—
7
pF
Output Capacitance (DOUT)
COUT
—
7
pF
Parameter
Input Capacitance (A0 - A9, A10R, DIN)
4/16
¡ Semiconductor
MSM512100/L
DC Characteristics
Parameter
(VCC = 5 V ±10%, Ta = 0°C to 70°C)
Symbol
Condition
MSM512100 MSM512100 MSM512100
/L-60
/L-70
/L-80
Unit Note
Min.
Max.
Min.
Max.
Min.
Max.
Output High Voltage
VOH IOH = –5.0 mA
2.4
VCC
2.4
VCC
2.4
VCC
V
Output Low Voltage
VOL IOL = 4.2 mA
0
0.4
0
0.4
0
0.4
V
Input Leakage Current
ILI
–10
10
–10
10
–10
10
mA
–10
10
–10
10
–10
10
mA
—
80
—
70
—
60
mA 1, 2
—
2
—
2
—
2
—
1
—
1
—
1
—
100
—
100
—
—
80
—
70
—
5
—
—
80
—
—
0 V £ VI £ 6.5 V;
All other pins not
under test = 0 V
Output Leakage Current
ILO
Average Power
Supply Current
ICC1
(Operating)
DOUT disable
0 V £ VO £ 5.5 V
RAS, CAS cycling,
tRC = Min.
RAS, CAS = VIH
Power Supply
Current (Standby)
ICC2 RAS, CAS
≥ VCC –0.2 V
1
100
mA
1, 5
—
60
mA 1, 2
5
—
5
mA
—
70
—
60
mA 1, 2
60
—
50
—
40
mA 1, 3
200
—
200
—
200
mA
RAS cycling,
Average Power
ICC3 CAS = VIH,
Supply Current
(RAS-only Refresh)
tRC = Min.
RAS = VIH,
Power Supply
Current (Standby)
ICC5 CAS = VIL,
Supply Current
ICC6
(CAS before RAS Refresh)
1
DOUT = enable
Average Power
RAS cycling,
CAS before RAS
RAS = VIL,
Average Power
ICC7 CAS cycling,
Supply Current
(Fast Page Mode)
tPC = Min.
Average Power
tRC = 125 ms,
ICC10 CAS before RAS,
Supply Current
(Battery Backup)
Notes : 1.
2.
3.
4.
5.
mA
tRAS £ 1 ms
1, 4,
5
ICC Max. is specified as ICC for output open condition.
The address can be changed once or less while RAS = VIL.
The address can be changed once or less while CAS = VIH.
VCC – 0.2 V £ VIH £ 6.5 V, –1.0 V £ VIL £ 0.2 V.
L-version.
5/16
¡ Semiconductor
MSM512100/L
AC Characteristics (1/2)
(VCC = 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3, 11, 12
Parameter
MSM512100 MSM512100 MSM512100
/L-70
/L-80
/L-60
Unit Note
Symbol
Min.
Max.
Min.
Max.
Min.
Max.
tRC
110
—
130
—
150
—
ns
tRWC
130
—
155
—
175
—
ns
tPC
40
—
45
—
50
—
ns
tPRWC
60
—
70
—
75
—
ns
Access Time from RAS
tRAC
—
60
—
70
—
80
ns
4, 5, 6
Access Time from CAS
tCAC
—
15
—
20
—
20
ns
4, 5
Access Time from Column Address
tAA
—
30
—
35
—
40
ns
4, 6
Access Time from CAS Precharge
tCPA
—
35
—
40
—
45
ns
4
Access Time from OE
tOEA
—
15
—
20
—
20
ns
4
Output Low Impedance Time from CAS
tCLZ
0
—
0
—
0
—
ns
4
CAS to Data Output Buffer Turn-off Delay Time
tOFF
0
15
0
20
0
20
ns
7
OE to Data Output Buffer Turn-off Delay Time
tOEZ
0
15
0
20
0
20
ns
7
3
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
Fast Page Mode Read Modify Write
Cycle Time
Transition Time
tT
3
50
3
50
3
50
ns
Refresh Period
tREF
—
16
—
16
—
16
ms
Refresh Period (L-version)
tREF
—
128
—
128
—
128
ms
RAS Precharge Time
tRP
40
—
50
—
60
—
ns
RAS Pulse Width
tRAS
60
10,000
70
10,000
80
10,000
ns
RAS Pulse Width (Fast Page Mode)
tRASP
60
100,000
70
100,000
80
100,000
ns
RAS Hold Time
tRSH
15
—
20
—
20
—
ns
RAS Hold Time referenced to OE
tROH
15
—
20
—
20
—
ns
CAS Precharge Time (Fast Page Mode)
tCP
10
—
10
—
10
—
ns
CAS Pulse Width
tCAS
15
10,000
20
10,000
20
10,000
ns
CAS Hold Time
tCSH
60
—
70
—
80
—
ns
CAS to RAS Precharge Time
tCRP
5
—
5
—
5
—
ns
RAS Hold Time from CAS Precharge
tRHCP
35
—
40
—
45
—
ns
RAS to CAS Delay Time
tRCD
20
45
20
50
20
60
ns
5
RAS to Column Address Delay Time
tRAD
15
30
15
35
15
40
ns
6
Row Address Set-up Time
tASR
0
—
0
—
0
—
ns
Row Address Hold Time
tRAH
10
—
10
—
10
—
ns
Column Address Set-up Time
tASC
0
—
0
—
0
—
ns
Column Address Hold Time
tCAH
15
—
15
—
15
—
ns
Column Address Hold Time from RAS
tAR
50
—
55
—
60
—
ns
Column Address to RAS Lead Time
tRAL
30
—
35
—
40
—
ns
6/16
¡ Semiconductor
MSM512100/L
AC Characteristics (2/2)
(VCC = 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3, 11, 12
Parameter
Symbol
MSM512100 MSM512100 MSM512100
/L-70
/L-80
/L-60
Unit Note
Min.
Max.
Min.
Max.
Min.
Max.
Read Command Set-up Time
tRCS
0
—
0
—
0
—
ns
Read Command Hold Time
tRCH
0
—
0
—
0
—
ns
8
Read Command Hold Time referenced to RAS
tRRH
0
—
0
—
0
—
ns
8
9
Write Command Set-up Time
tWCS
0
—
0
—
0
—
ns
Write Command Hold Time
tWCH
10
—
10
—
10
—
ns
Write Command Hold Time from RAS
tWCR
45
—
50
—
60
—
ns
Write Command Pulse Width
tWP
10
—
10
—
10
—
ns
OE Command Hold Time
tOEH
15
—
20
—
20
—
ns
Write Command to RAS Lead Time
tRWL
15
—
20
—
20
—
ns
Write Command to CAS Lead Time
tCWL
15
—
20
—
20
—
ns
Data-in Set-up Time
tDS
0
—
0
—
0
—
ns
10
Data-in Hold Time
tDH
15
—
15
—
15
—
ns
10
Data-in Hold Time from RAS
tDHR
50
—
55
—
60
—
ns
OE to Data-in Delay Time
tOED
15
—
20
—
20
—
ns
CAS to WE Delay Time
tCWD
15
—
20
—
20
—
ns
9
Column Address to WE Delay Time
tAWD
30
—
35
—
40
—
ns
9
RAS to WE Delay Time
tRWD
60
—
70
—
80
—
ns
9
CAS Precharge WE Delay Time
tCPWD
35
—
40
—
45
—
ns
9
CAS Active Delay Time from RAS Precharge
tRPC
5
—
5
—
5
—
ns
RAS to CAS Set-up Time (CAS before RAS)
tCSR
5
—
5
—
5
—
ns
RAS to CAS Hold Time (CAS before RAS)
tCHR
10
—
10
—
10
—
ns
WE to RAS Precharge Time (CAS before RAS) tWRP
10
—
10
—
10
—
ns
WE Hold Time from RAS (CAS before RAS) tWRH
10
—
10
—
10
—
ns
RAS to WE Set-up Time (Test Mode)
tWTS
10
—
10
—
10
—
ns
RAS to WE Hold Time (Test Mode)
tWTH
10
—
10
—
10
—
ns
7/16
¡ Semiconductor
Notes:
MSM512100/L
1. A start-up delay of 200 µs is required after power-up, followed by a minimum of
eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before
proper device operation is achieved.
2. The AC characteristics assume tT = 5 ns.
3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals.
Transition times (tT) are measured between VIH and VIL.
4. This parameter is measured with a load circuit equivalent to 2 TTL loads and 100 pF.
5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met.
tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified
tRCD (Max.) limit, then the access time is controlled by tCAC.
6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met.
tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified
tRAD (Max.) limit, then the access time is controlled by tAA.
7. tOFF (Max.) defines the time at which the output achieves the open circuit condition and
is not referenced to output voltage levels.
8. tRCH or tRRH must be satisfied for a read cycle.
9. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are
included in the data sheet as electrical characteristics only. If tWCS ≥ tWCS (Min.), then
the cycle is an early write cycle and the data out will remain open circuit (high
impedance) throughout the entire cycle. If tCWD ≥ tCWD (Min.) , tRWD ≥ tRWD (Min.),
tAWD ≥ tAWD (Min.) and tCPWD ≥ tCPWD (Min.), then the cycle is a read modify write
cycle and data out will contain data read from the selected cell; if neither of the above
sets of conditions is satisfied, then the condition of the data out (at access time) is
indeterminate.
10. These parameters are referenced to the CAS leading edge in an early write cycle, and
to the WE leading edge in an OE control write cycle, or a read modify write cycle.
11. The test mode is initiated by performing a WE and CAS before RAS refresh cycle.
This mode is latched and remains in effect until the exit cycle is generated.
The test mode specified in this data sheet is a 4-bit parallel test function. RA10 and
CA0 are not used. In a read cycle, if all internal bits are equal, the data output pin
will indicate a high level. If any internal bits are not equal, the data output pin will
indicate a low level.
The test mode is cleared and the memory device returned to its normal operating
state by performing a RAS-only refresh cycle or a CAS before RAS refresh cycle.
12. In a test mode read cycle, the value of access time parameters is delayed for 5 ns for the
specified value. These parameters should be specified in test mode cycle by adding the
above value to the specified value in this data sheet.
8/16
E2G0089-17-41B
¡ Semiconductor
MSM512100/L
TIMING WAVEFORM
Read Cycle
tRC
tCSH
tCRP
CAS
tRP
tRAS
VIH –
RAS
VIL –
tRCD
VIH –
VIL –
tCRP
tRSH
tCAS
,,
,
,
,,
tRAD
tASR
Address
VIH –
VIL –
tRAH
tRAL
tCAH
tASC
Row
Column
tAR
tRRH
tRCS
WE
tRCH
VIH –
VIL –
tROH
OE
tOEA
VIH –
VIL –
tCAC
tAA
VOH –
VOL –
tOFF
tCLZ
tRAC
DOUT
tOEZ
Open
Valid Data
"H" or "L"
Write Cycle (Early Write)
tRC
tRCD
tCRP
tRSH
tCSH
V
CAS IH –
VIL –
tCAS
tRAD
tRAH
tRAL
tCAH
tASC
Row
Column
tWCR
tCWL
tWCS
tWCH
VIH –
WE
VIL –
OE
tWP
VIH –
VIL –
tRWL
tDHR
tDS
DIN
VIH –
VIL –
DOUT
VOH –
VOL –
tCRP
tAR
tASR
Address VIH –
VIL –
tRP
tRAS
VIH –
RAS V –
IL
tDH
Valid Data
Open
"H" or "L"
9/16
¡ Semiconductor
MSM512100/L
Read Modify Write Cycle
tRWC
tCRP
CAS
tRP
tRAS
VIH –
RAS V –
IL
tRSH
tRCD
tRWL
tCRP
tCAS
VIH –
VIL –
,
,
tASR
V
Address IH –
VIL –
tRAD
tRAH
tCSH
tAR
tASC
Row
tCWL
tRAL
tCAH
Column
tAWD
tRWD
tCWD
WE
VIH –
VIL –
tRCS
tOED
OE
tOEH
tOEA
VIH –
VIL –
tOEZ
tDS
DIN
tWP
VIH –
VIL –
tDH
Valid Data
tCAC
tAA
tRAC
DOUT
VOH –
VOL –
Valid
Data
Open
tCLZ
"H" or "L"
10/16
¡ Semiconductor
MSM512100/L
Fast Page Mode Read Cycle
tRASP
VIH –
RAS
VIL –
tRP
tRHCP
tCSH
tRCD
tCRP
V
CAS IH –
VIL –
tCAS
tAR
tASC
tPC
tCAS
tCP
tRSH
tCAS
tCP
tCRP
,
,
,
,
tASR
Address
VIH –
VIL –
tRAH
Row
tASC
tCAH
Column
tRAD
tCAH
Column
tRCH
Column
tRRH
tRCH
tRCS
tRCS
tRAL
tCAH
tASC
tRCS
tRCH
VIH –
WE
VIL –
tOEA
tOEA
tOEA
VIH –
OE
VIL –
tOEZ
tOEZ
tCAC
tCAC
tAA
tCPA
tAA
tRAC
DOUT
VOH –
VOL –
Valid
Data
tCLZ
tOEZ
tCAC
tAA
tCPA
Valid
Data
tOFF
tCLZ
Valid
Data
tOFF
tCLZ
tOFF
"H" or "L"
Fast Page Mode Write Cycle (Early Write)
tRP
tRASP
RAS
VIH –
VIL –
tRHCP
tCRP
CAS
VIH –
VIL –
tASR
Address
VIH –
VIL –
WE
VIH –
VIL –
DIN
VIH –
VIL –
tCAS
tRCD
tRAH
tAR
tASC
Row
tCAH
Column
tRAD
tWCR
tWCS
tPC
tCAS
tCP
Column
tASC
tCRP
tRAL
tCAH
Column
tRWL
tCWL
tWCH
tWCS
tDH
tDS
tWP
tDS
tCAH
tASC
tRSH
tCAS
tCP
Valid Data
tCWL
tWCH
tWP
tDH
Valid Data
tWCS
tDS
tCWL
tWCH
tWP
tDH
Valid Data
tDHR
DOUT
VOH –
VOL –
Open
Note: OE = "H" or "L"
"H" or "L"
11/16
,
,,,
,,,
¡ Semiconductor
MSM512100/L
Fast Page Mode Read Modify Write Cycle
tRASP
RAS
VIH –
VIL –
tRHCP
tCSH
tRCD
CAS
VIH –
VIL –
tASR
Address VIH –
VIL –
tAR
tRAH
tASC
Row
tCAH
tRWD
tCWD
VIH –
WE
VIL –
tAWD
tAA
tRAD
tCAC
tOEA
OE
VIH –
VIL –
tCP
tCAH
tASC
Column
tRCS
tPRWC
tCAS
tCP
tCAS
tCPWD
tCWD
tCAH
tCPA
tAA
tCAC
tDS
tCWL tRCS
tOEA
tOEZ
tCPWD
tCWD
tCWL
tRWL
tAWD
tCPA
tAA
tCAC
tWP
tDS
tOED
tRAL
Column
tAWD
tWP
tCRP
tCAS
tASC
Column
tCWL tRCS
tRP
tRSH
tOED
tOEA
tOEZ
tWP
tDS
tOED
tOEZ
tRAC
DOUT
VOH –
VOL –
tCLZ
Valid
Data
tCLZ
Valid
Data
tDH
DIN
VIH –
VIL –
Valid
Data
tCLZ
Valid
Data
tDH
Valid
Data
tDH
Valid
Data
"H" or "L"
12/16
,
,,
¡ Semiconductor
MSM512100/L
RAS-Only Refresh Cycle
tRC
tRP
tRAS
RAS
VIH –
VIL –
tRPC
tCRP
CAS
VIH –
VIL –
tASR
Address VIH –
VIL –
tRAH
Row
tOFF
DOUT
VOH –
VOL –
Open
Note: WE, OE = "H" or "L"
"H" or "L"
CAS before RAS Refresh Cycle
tRC
tRAS
RAS
VIH –
VIL –
tRPC
tRPC
tCP
CAS
WE
tRP
tCSR
tCHR
tWRP
tWRH
VIH –
VIL –
tWRP
VIH –
VIL –
tOFF
DOUT
VOH –
VOL –
Open
Note: OE, Address = "H" or "L"
"H" or "L"
13/16
,,,
,
,,
,
,,
¡ Semiconductor
MSM512100/L
Hidden Refresh Read Cycle
tRC
tRAS
RAS
VIH –
VIL –
tRCD
tCRP
CAS
VIH –
VIL –
VIH –
VIL –
tRSH
tRAH
tRAL
tCAH
tASC
Row
Column
tAR
tRCS
WE
VIH –
VIL –
OE
VIH –
VIL –
tCHR
tRAD
tASR
Address
tRAS
tRP
tRRH tWRP
tWRH
tROH
tOEA
tRAC
DOUT
VOH –
VOL –
tOEZ
tCAC
tAA
tOFF
Valid Data
tCLZ
"H" or "L"
Hidden Refresh Write Cycle
tRC
tRAS
RAS
VIH –
VIL –
tRCD
tCRP
CAS
VIH –
VIL –
tRAD
tASR
Address
VIH –
VIL –
tRAH
Row
tRAS
tRP
tRSH
tCHR
tAR
tRAL
tCAH
tASC
Column
tWCR
WE
VIH –
VIL –
OE
VIH –
VIL –
tRWL
tWCH
tWP
tWCS
VIH –
VIL –
DOUT
VOH –
VOL –
tWRH
tDH
tDS
DIN
tWRP
Valid Data
tDHR
Open
"H" or "L"
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,
¡ Semiconductor
MSM512100/L
Test Mode Initiate Cycle
tRC
tRP
RAS
VIH –
VIL –
tRPC
tCP
CAS
tRAS
tCSR
tWTS
WE
tCHR
VIH –
VIL –
tWTH
VIH –
VIL –
tOFF
DOUT
VOH –
VOL –
Open
Note: OE, Address, DIN = "H" or "L"
"H" or "L"
15/16
¡ Semiconductor
MSM512100/L
PACKAGE DIMENSIONS
(Unit : mm)
SOJ26/20-P-300-1.27
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
0.80 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
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