OKI MSM51V16400DSL-70SJ 4,194,304-word x 4-bit dynamic ram : fast page mode type Datasheet

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E2G0122-17-61
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4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM51V16400D/DSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM51V16400D/DSL achieves high integration, high-speed operation,
and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/
double-layer metal CMOS process. The MSM51V16400D/DSL is available in a 26/24-pin plastic SOJ
or 26/24-pin plastic TSOP. The MSM51V16400DSL (the self-refresh version) is specially designed
for lower-power applications.
FEATURES
• 4,194,304-word ¥ 4-bit configuration
• Single 3.3 V power supply, ±0.3 V tolerance
• Input
: LVTTL compatible, low input capacitance
• Output : LVTTL compatible, 3-state
• Refresh : 4096 cycles/64 ms, 4096 cycles/128 ms (SL version)
• Fast page mode, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• CAS before RAS self-refresh capability (SL version)
• Multi-bit test mode capability
• Package options:
26/24-pin 300 mil plastic SOJ
(SOJ26/24-P-300-1.27)
(Product : MSM51V16400D/DSL-xxSJ)
26/24-pin 300 mil plastic TSOP
(TSOPII26/24-P-300-1.27-K) (Product : MSM51V16400D/DSL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
Access Time (Max.)
tRAC
tAA
tCAC
tOEA
ar
This
version: Mar. 1998
MSM51V16400D/DSL
in
¡ Semiconductor
MSM51V16400D/DSL
¡ Semiconductor
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
MSM51V16400D/DSL-50 50 ns 25 ns 13 ns 13 ns
90 ns
270 mW
MSM51V16400D/DSL-60 60 ns 30 ns 15 ns 15 ns
110 ns
252 mW
MSM51V16400D/DSL-70 70 ns 35 ns 20 ns 20 ns
130 ns
234 mW
1.8 mW/
0.72 mW (SL version)
1/17
,
¡ Semiconductor
MSM51V16400D/DSL
PIN CONFIGURATION (TOP VIEW)
VCC 1
26 VSS
VCC 1
26 VSS
DQ1 2
25 DQ4
DQ1 2
25 DQ4
DQ2 3
24 DQ3
DQ2 3
24 DQ3
WE 4
23 CAS
WE 4
23 CAS
RAS 5
22 OE
RAS 5
22 OE
A11R 6
21 A9
A11R 6
21 A9
A10R 8
19 A8
A10R 8
19 A8
A0 9
18 A7
A0 9
18 A7
A1 10
17 A6
A1 10
17 A6
A2 11
16 A5
A2 11
16 A5
A3 12
15 A4
A3 12
15 A4
VCC 13
14 VSS
VCC 13
14 VSS
28-Pin Plastic SOJ
Pin Name
A0 - A9,
A9R - A11R
RAS
Note :
28-Pin Plastic TSOP
(K Type)
Function
Address Input
Row Address Strobe
CAS
Column Address Strobe
DQ1 - DQ4
Data Input/Data Output
OE
Output Enable
WE
Write Enable
VCC
Power Supply (3.3 V)
VSS
Ground (0 V)
The same power supply voltage must be provided to every VCC pin, and the same GND
voltage level must be provided to every VSS pin.
2/17
¡ Semiconductor
MSM51V16400D/DSL
BLOCK DIAGRAM
RAS
Timing
Generator
Timing
Generator
CAS
10
Column
Address
Buffers
10
Write
Clock
Generator
Column
Decoders
WE
OE
4
Internal
Address
Counter
A0 - A9
Refresh
Control Clock
Sense
Amplifiers
4
I/O
Selector
A10R, A11R
2
Row
Address
Buffers
12
Row
Decoders
Word
Drivers
4
4
4
4
10
Output
Buffers
Input
Buffers
DQ1 - DQ4
4
Memory
Cells
VCC
On Chip
VBB Generator
VSS
3/17
¡ Semiconductor
MSM51V16400D/DSL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
VT
–0.5 to 4.6
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD*
1
W
Operating Temperature
Topr
0 to 70
°C
Storage Temperature
Tstg
–55 to 150
°C
Voltage on Any Pin Relative to VSS
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
(Ta = 0°C to 70°C)
Symbol
Min.
Typ.
Max.
Unit
VCC
3.0
3.3
3.6
V
VSS
0
0
0
V
Input High Voltage
VIH
2.0
—
VCC + 0.3
V
Input Low Voltage
VIL
–0.3
—
0.8
V
Capacitance
(VCC = 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
Symbol
Typ.
Max.
Unit
Input Capacitance
(A0 - A9, A10R, A11R)
CIN1
—
5
pF
Input Capacitance (RAS, CAS, WE, OE)
CIN2
—
7
pF
Output Capacitance (DQ1 - DQ4)
CI/O
—
7
pF
Parameter
4/17
¡ Semiconductor
MSM51V16400D/DSL
DC Characteristics
Parameter
(VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C)
Symbol
Condition
MSM51V16400 MSM51V16400 MSM51V16400
D/DSL-50
D/DSL-60
D/DSL-70 Unit Note
Min.
Max.
Min.
Max.
Min.
Max.
Output High Voltage
VOH IOH = –2.0 mA
2.4
VCC
2.4
VCC
2.4
VCC
V
Output Low Voltage
VOL IOL = 2.0 mA
0
0.4
0
0.4
0
0.4
V
Input Leakage Current
ILI
–10
10
–10
10
–10
10
mA
–10
10
–10
10
–10
10
mA
—
75
—
70
—
65
mA
1, 2
—
2
—
2
—
2
—
0.5
—
0.5
—
0.5
mA
1
—
200
—
200
—
200
mA
1, 5
—
75
—
70
—
65
mA
1, 2
—
5
—
5
—
5
mA
1
—
75
—
70
—
65
mA
1, 2
—
70
—
65
—
60
mA
1, 3
—
400
—
400
—
400
mA
—
300
—
300
—
300
mA
0 V £ VI £ VCC + 0.3 V;
All other pins not
under test = 0 V
Output Leakage Current
ILO
Average Power
Supply Current
ICC1
(Operating)
DQ disable
0 V £ VO £ VCC
RAS, CAS cycling,
tRC = Min.
RAS, CAS = VIH
Power Supply
Current (Standby)
ICC2 RAS, CAS
≥ VCC –0.2 V
RAS cycling,
Average Power
Supply Current
ICC3 CAS = VIH,
(RAS-only Refresh)
tRC = Min.
RAS = VIH,
Power Supply
Current (Standby)
ICC5 CAS = VIL,
DQ = enable
Average Power
Supply Current
ICC6
(CAS before RAS Refresh)
CAS before RAS
RAS = VIL,
Average Power
Supply Current
RAS cycling,
ICC7 CAS cycling,
(Fast Page Mode)
tPC = Min.
Average Power
tRC = 31.3 ms,
Supply Current
ICC10 CAS before RAS,
tRAS £ 1 ms
(Battery Backup)
1, 4,
5
Average Power
Supply Current
(CAS before RAS
ICCS
RAS £ 0.2 V,
CAS £ 0.2 V
1, 5
Self-Refresh)
Notes : 1.
2.
3.
4.
5.
ICC Max. is specified as ICC for output open condition.
The address can be changed once or less while RAS = VIL.
The address can be changed once or less while CAS = VIH.
VCC – 0.2 V £ VIH £ VCC + 0.3 V, –0.3 V £ VIL £ 0.2 V.
SL version.
5/17
¡ Semiconductor
MSM51V16400D/DSL
AC Characteristics (1/2)
(VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3, 11, 12
Parameter
MSM51V16400 MSM51V16400 MSM51V16400
D/DSL-60
D/DSL-70 Unit Note
Symbol D/DSL-50
Min.
Max.
Min.
Max.
Min.
Max.
—
—
—
110
—
—
130
—
—
ns
ns
tPC
90
131
35
—
ns
tPRWC
76
—
Access Time from RAS
tRAC
—
Access Time from CAS
tCAC
—
Access Time from Column Address
Access Time from CAS Precharge
tAA
tCPA
Access Time from OE
Output Low Impedance Time from CAS
Random Read or Write Cycle Time
Read Modify Write Cycle Time
tRC
tRWC
—
185
45
85
—
100
—
ns
50
—
60
—
70
ns
4, 5, 6
13
—
15
—
20
ns
4, 5
—
—
25
30
—
—
30
35
—
—
35
40
ns
ns
4, 6
4
tOEA
tCLZ
—
0
13
—
—
0
15
—
—
0
20
—
ns
ns
4
4
CAS to Data Output Buffer Turn-off Delay Time
tOFF
tOEZ
tT
tREF
0
0
3
—
13
OE to Data Output Buffer Turn-off Delay Time
Transition Time
Refresh Period
13
50
64
0
0
3
—
15
15
50
64
0
0
3
—
20
20
50
64
ns
ns
ns
ms
7
7
3
Refresh Period (SL version)
tREF
—
128
—
128
—
128
ms
13
RAS Precharge Time
tRP
30
—
40
—
50
—
ns
RAS Pulse Width
tRAS
50
10,000
60
10,000
70
10,000
ns
RAS Pulse Width (Fast Page Mode)
tRASP
50
100,000
60
100,000
70
100,000
ns
RAS Hold Time
tRSH
13
tROH
13
15
15
—
—
20
20
—
—
ns
RAS Hold Time referenced to OE
—
—
CAS Precharge Time (Fast Page Mode)
tCP
7
—
10
—
10
—
ns
CAS Pulse Width
tCAS
13
10,000
15
10,000
20
10,000
ns
CAS Hold Time
tCSH
CAS to RAS Precharge Time
tCRP
50
5
—
—
60
5
—
—
70
5
—
—
ns
ns
RAS Hold Time from CAS Precharge
tRHCP
RAS to CAS Delay Time
tRCD
RAS to Column Address Delay Time
tRAD
30
17
12
—
37
25
35
20
15
—
45
30
40
20
15
—
50
35
ns
ns
ns
Row Address Set-up Time
tASR
0
—
0
—
0
—
ns
Row Address Hold Time
tRAH
7
—
10
—
10
—
ns
Column Address Set-up Time
tASC
0
—
0
—
0
—
ns
Fast Page Mode Cycle Time
Fast Page Mode Read Modify Write
Cycle Time
155
40
ns
5
6
Column Address Hold Time
tCAH
7
—
10
—
15
—
ns
Column Address to RAS Lead Time
tRAL
25
—
30
—
35
—
ns
Read Command Set-up Time
tRCS
0
—
0
—
0
—
ns
Read Command Hold Time
tRCH
0
—
0
—
0
—
ns
8
Read Command Hold Time referenced to RAS
tRRH
0
—
0
—
0
—
ns
8
6/17
¡ Semiconductor
MSM51V16400D/DSL
AC Characteristics (2/2)
(VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3, 11, 12
Parameter
Symbol
MSM51V16400MSM51V16400 MSM51V16400
D/DSL-50
D/DSL-60
D/DSL-70 Unit Note
Min.
Max.
Min.
Max.
Min.
Max.
Write Command Set-up Time
tWCS
0
—
0
—
0
—
ns
Write Command Hold Time
tWCH
7
—
10
—
15
—
ns
Write Command Pulse Width
OE Command Hold Time
Write Command to RAS Lead Time
Write Command to CAS Lead Time
tWP
tOEH
tRWL
tCWL
7
13
—
—
10
15
—
—
10
20
—
—
ns
ns
13
13
—
—
15
15
—
—
20
20
—
—
ns
ns
Data-in Set-up Time
Data-in Hold Time
OE to Data-in Delay Time
tDS
tDH
tOED
tCWD
tAWD
tRWD
—
—
—
—
—
—
0
10
15
40
55
85
—
—
—
—
—
—
0
15
20
50
65
100
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
10
10
CAS to WE Delay Time
Column Address to WE Delay Time
RAS to WE Delay Time
0
7
13
36
48
73
CAS Precharge WE Delay Time
tCPWD
53
—
60
—
70
—
ns
9
9
9
9
9
CAS Active Delay Time from RAS Precharge
tRPC
5
—
5
—
5
—
ns
RAS to CAS Set-up Time (CAS before RAS)
RAS to CAS Hold Time (CAS before RAS)
tCSR
tCHR
10
10
—
—
10
10
—
—
10
10
—
—
ns
ns
WE to RAS Precharge Time (CAS before RAS)
WE Hold Time from RAS (CAS before RAS)
RAS to WE Set-up Time (Test Mode)
RAS to WE Hold Time (Test Mode)
tWRP
tWRH
tWTS
tWTH
10
10
10
10
—
—
—
—
10
10
10
10
—
—
—
—
10
10
10
10
—
—
—
—
ns
ns
ns
ns
tRASS
100
—
100
—
100
—
ms
13
tRPS
90
—
110
—
130
—
ns
13
tCHS
–50
—
–50
—
–50
—
ns
13
RAS Pulse Width
(CAS before RAS Self-Refresh)
RAS Precharge Time
(CAS before RAS Self-Refresh)
CAS Hold Time
(CAS before RAS Self-Refresh)
7/17
¡ Semiconductor
Notes:
MSM51V16400D/DSL
1. A start-up delay of 200 µs is required after power-up, followed by a minimum of eight
initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device
operation is achieved.
2. The AC characteristics assume tT = 5 ns.
3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals.
Transition times (tT) are measured between VIH and VIL.
4. This parameter is measured with a load circuit equivalent to 1 TTL load and 100 pF.
The output timing reference levels are VOH = 2.0 V and VOL = 0.8 V.
5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met.
tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified
tRCD (Max.) limit, then the access time is controlled by tCAC.
6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met.
tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified
tRAD (Max.) limit, then the access time is controlled by tAA.
7. tOFF (Max.) and tOEZ (Max.) define the time at which the output achieves the open
circuit condition and are not referenced to output voltage levels.
8. tRCH or tRRH must be satisfied for a read cycle.
9. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are
included in the data sheet as electrical characteristics only. If tWCS ≥ tWCS (Min.), then
the cycle is an early write cycle and the data out will remain open circuit (high
impedance) throughout the entire cycle. If tCWD ≥ tCWD (Min.) , tRWD ≥ tRWD (Min.),
tAWD ≥ tAWD (Min.) and tCPWD ≥ tCPWD (Min.), then the cycle is a read modify write
cycle and data out will contain data read from the selected cell; if neither of the above
sets of conditions is satisfied, then the condition of the data out (at access time) is
indeterminate.
10. These parameters are referenced to the CAS leading edge in an early write cycle, and
to the WE leading edge in an OE control write cycle, or a read modify write cycle.
11. The test mode is initiated by performing a WE and CAS before RAS refresh cycle.
This mode is latched and remains in effect until the exit cycle is generated. In a test mode
CA0 and CA1 are not used and each DQ pin now accesses 4-bit locations. Since all 4 DQ
pins are used, a total of 16 data bits can be written in parallel into the memory array.
In a read cycle, if 4 data bits are equal, the DQ pin will indicate a high level. If the 4 data
bits are not equal, the DQ pin will indicate a low level. The test mode is cleared and the
memory device returned to its normal operating state by performing a RAS-only
refresh cycle or a CAS before RAS refresh cycle.
12. In a test mode read cycle, the value of access time parameters is delayed for 5 ns for the
specified value. These parameters should be specified in test mode cycle by adding the
above value to the specified value in this data sheet.
13. Only SL version.
8/17
E2G0101-17-41N
,,,
,
,,,,
¡ Semiconductor
MSM51V16400D/DSL
TIMING WAVEFORM
Read Cycle
tRC
tRP
tRAS
RAS
VIH –
VIL –
tCRP
tCSH
tCRP
CAS
tRCD
VIH –
VIL –
tRAD
tASR
Address
VIH –
VIL –
tRSH
tCAS
tRAH tASC
tRAL
tCAH
Column
Row
tRCS
WE
OE
VIH –
VIL –
tAA
tROH
tOEA
VIH –
VIL –
tCAC
tRAC
DQ
tRCH
tRRH
VOH –
tOEZ
Open
VOL –
tOFF
Valid Data-out
tCLZ
"H" or "L"
Write Cycle (Early Write)
tRC
tRP
tRAS
RAS
VIH –
VIL –
tCRP
tCRP
VIH –
CAS
VIL –
WE
OE
VIH –
VIL –
tASC
Row
tCAS
tCAH
tRAL
Column
tWCS
VIH –
tWCH
tCWL
tWP
VIL –
tRWL
VIH –
VIL –
tDS
DQ
tRSH
tRAD
tRAH
tASR
Address
tCSH
tRCD
VIH –
VIL –
tDH
Valid Data-in
Open
"H" or "L"
9/17
,,,
¡ Semiconductor
MSM51V16400D/DSL
Read Modify Write Cycle
tRWC
tRAS
RAS
VIH –
VIL –
tRP
tCRP
tCSH
tCRP
tRCD
tRSH
tCAS
VIH –
CAS
VIL –
tASR
VIH –
Address
VIL –
WE
VIH –
VIL –
OE
VIH –
VIL –
tRAH
tASC
tCAH
Column
Row
tRAD
tRWD
tAA
tAWD
tRCS
tOEA
tOED
tCAC
tRAC
DQ
VI/OH–
VI/OL–
tCWL
tRWL
tWP
tCWD
tCLZ
tOEZ
Valid
Data-out
tOEH
tDS
tDH
Valid
Data-in
"H" or "L"
10/17
,,,
,
,,
,
¡ Semiconductor
MSM51V16400D/DSL
Fast Page Mode Read Cycle
tRASP
VIH –
RAS V –
IL
VIH –
CAS
VIL –
Address
WE
VIH –
VIL –
tRP
tRHCP
tCRP
tPC
tRCD
tCP
tASR
tCP
tCAS
tCAS
tRAD
tRAH tASC
tCSH
tCAH
tASC
Column
Row
VIH –
VIL –
tCAC
VOH –
DQ
VOL –
Column
tRCS
tRCH
tRRH
tCPA
tOEA
tOFF
tOEZ
tRCH
tAA
tAA
tCAC
tOEA
tOFF
tCAC
tOEZ
tCLZ
Valid
Data-out
tCLZ
tRCS
tCPA
tOEA
tRAC
tRAL
tCAH
tASC
Column
tAA
VIH –
OE
VIL –
tCAS
tCAH
tRCH
tRCS
tCRP
tRSH
tCLZ
tOFF
tOEZ
Valid
Data-out
Valid
Data-out
"H" or "L"
Fast Page Mode Write Cycle (Early Write)
tRASP
VIH –
RAS V –
IL
tCRP
VIH –
CAS
VIL –
Address
VIH –
VIL –
tCAS
tASR
tRAH tASC
Row
tRAD
VIH –
VIL –
tDS
VIH –
DQ
VIL –
tRHCP
tRSH
tRCD
tWCS
WE
tRP
tPC
tCSH
tCAH
Column
tCWL
tWCH
tWP
tDH
Valid Data-in
tCP
tCRP
tCP
tCAS
tASC
tCAH
tASC
Column
tCWL
tWCS
tWCH
tWP
tDS
tDH
Valid
Data-in
tCAS
tCAH
tRAL
Column
tRWL
tCWL
tWCS
tWCH
tWP
tDS
tDH
Valid
Data-in
Note: OE = "H" or "L"
"H" or "L"
11/17
¡ Semiconductor
MSM51V16400D/DSL
,,
,,
,
,
,
Fast Page Mode Read Modify Write Cycle
tRASP
VIH –
RAS
VIL –
tRP
tCSH
tPRWC
tRCD
VIH –
CAS
VIL –
tASC
tCAH
tRAH
VIH –
VIL –
tCRP
tCAS
tASC
tCAH
tCAH
Column
Column
tASC
Column
Row
tRCS
tCPWD
tCWD
tRWD
tCWD
tRCS
V
WE IH –
VIL –
tCWL
tAWD
tCWL
tWP
tDH
VI/OH–
VI/OL –
Out
tCLZ
tOEA
tOED
tOEZ
tCAC
In
tDH
tDS
tOEA
tOEZ
tCAC
tWP
tCPA
tAA
tOED
VIH –
OE V –
IL
tCWL
tROH
tWP
tDH
tDS
tOEA
tRWL
tAWD
tCPA
tAA
tAA
tRAL
tRCS
tCPWD
tCWD
tAWD
tDS
tRAC
DQ
tCP
tCAS
tRAD
tASR
Address
tCP
tCAS
tRSH
Out
tOED
In
tCLZ
tOEZ
tCAC
Out
In
tCLZ
"H" or "L"
RAS-Only Refresh Cycle
tRC
RAS
CAS
Address
VIL –
VIH –
VIL –
VIH –
VIL –
tRP
tRAS
VIH –
tCRP
tASR
tRPC
tRAH
Row
tOFF
DQ
VOH –
VOL –
Open
Note: WE, OE = "H" or "L"
"H" or "L"
12/17
M
L
K
^
]
\
S
R
Q
P
¡ Semiconductor
MSM51V16400D/DSL
CAS before RAS Refresh Cycle
tRC
tRP
RAS
tRP
tRAS
VIH –
VIL –
tRPC
tRPC
tCP
CAS
tCSR
tCHR
tWRP
tWRH
VIH –
VIL –
tWRP
,
,,
,
WE
VIH –
VIL –
DQ
VOH –
VOL –
tOFF
Open
Note: OE, Address = "H" or "L"
"H" or "L"
Hidden Refresh Read Cycle
tRC
tRAS
RAS
tRP
VIL –
VIH –
VIL –
VIH –
VIL –
tRSH
tRCD
tRAD
tASC
tRAH
tASR
Address
tRAS
tRP
VIH –
tCRP
CAS
tRC
Row
tCHR
tCAH
Column
tRCS
tRAL
VIH –
WE V
IL –
tRRH
tAA
tROH
tOEA
VIH –
OE V
IL –
tRAC
DQ
VOH –
VOL –
tCAC
tCLZ
tOFF
tOEZ
Valid Data-out
"H" or "L"
13/17
¡ Semiconductor
MSM51V16400D/DSL
Hidden Refresh Write Cycle
tRC
tRAS
VIH –
VIL –
RAS
Address
VIH –
VIL –
tCRP
tRCD
tRSH
tRAD
tASC
tASR
tCAH
tRAH
Row
WE
VIH –
VIL –
OE
VIH –
VIL –
tCHR
tRAL
Column
tWCS
tDS
DQ
tRP
,
,,,,
,
VIH –
VIL –
CAS
tRC
tRAS
tRP
VIH –
VIL –
tWCH
tWP
tWRP
tWRH
tDH
Valid Data-in
"H" or "L"
CAS before RAS Self-Refresh Cycle
tRASS
tRP
VIH –
RAS
VIL –
tRPS
tRPC
tCP
tRPC
tCSR
tCHS
VIH –
CAS
VIL –
tOFF
DQ VOH –
VOL –
Open
Note: WE, OE, Address = "H" or "L"
Only SL version
"H" or "L"
14/17
,
¡ Semiconductor
MSM51V16400D/DSL
Test Mode Initiate Cycle
tRC
tRP
RAS
VIH –
VIL –
tRPC
tCP
CAS
tRAS
tCSR
VIH –
VIL –
tWTS
WE
tCHR
tWTH
VIH –
VIL –
tOFF
DQ
VOH –
VOL –
Open
Note: OE, Address = "H" or "L"
"H" or "L"
15/17
¡ Semiconductor
MSM51V16400D/DSL
PACKAGE DIMENSIONS
(Unit : mm)
SOJ26/24-P-300-1.27
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
0.80 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
16/17
¡ Semiconductor
MSM51V16400D/DSL
(Unit : mm)
TSOPII26/24-P-300-1.27-K
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
0.29 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
17/17
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