OKI MSM51V16805D-50JS 2,097,152-word x 8-bit dynamic ram : fast page mode type with edo Datasheet

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E2G0128-17-61
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2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSM51V16805D/DSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM51V16805D/DSL achieves high integration, high-speed operation,
and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/
double-layer metal CMOS process. The MSM51V16805D/DSL is available in a 28-pin plastic SOJ or
28-pin plastic TSOP. The MSM51V16805DSL (the self-refresh version) is specially designed for
lower-power applications.
FEATURES
• 2,097,152-word ¥ 8-bit configuration
• Single 3.3 V power supply, ±0.3 V tolerance
• Input
: LVTTL compatible, low input capacitance
• Output : LVTTL compatible, 3-state
• Refresh : 4096 cycles/64 ms, 4096 cycles/128 ms (SL version)
• Fast page mode with EDO, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• CAS before RAS self-refresh capability (SL version)
• Multi-bit test mode capability
• Package options:
28-pin 400 mil plastic SOJ
(SOJ28-P-400-1.27)
(Product : MSM51V16805D/DSL-xxJS)
28-pin 400 mil plastic TSOP
(TSOPII28-P-400-1.27-K) (Product : MSM51V16805D/DSL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
Access Time (Max.)
tRAC
tAA
tCAC
tOEA
ar
This
version: Mar. 1998
MSM51V16805D/DSL
in
¡ Semiconductor
MSM51V16805D/DSL
¡ Semiconductor
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
MSM51V16805D/DSL-50 50 ns 25 ns 13 ns 13 ns
84 ns
360 mW
MSM51V16805D/DSL-60 60 ns 30 ns 15 ns 15 ns
104 ns
324 mW
MSM51V16805D/DSL-70 70 ns 35 ns 20 ns 20 ns
124 ns
288 mW
1.8 mW/
0.72 mW (SL version)
1/17
,
¡ Semiconductor
MSM51V16805D/DSL
PIN CONFIGURATION (TOP VIEW)
VCC 1
28 VSS
VCC 1
28 VSS
DQ1 2
27 DQ8
DQ1 2
27 DQ8
DQ2 3
26 DQ7
DQ2 3
26 DQ7
DQ3 4
25 DQ6
DQ3 4
25 DQ6
DQ4 5
24 DQ5
DQ4 5
24 DQ5
WE 6
23 CAS
WE 6
23 CAS
RAS 7
22 OE
RAS 7
22 OE
A11R 8
21 A9R
A11R 8
21 A9R
A10R 9
20 A8
A10R 9
20 A8
A0 10
19 A7
A0 10
19 A7
A1 11
18 A6
A1 11
18 A6
A2 12
17 A5
A2 12
17 A5
A3 13
16 A4
A3 13
16 A4
VCC 14
15 VSS
VCC 14
15 VSS
28-Pin Plastic SOJ
Pin Name
A0 - A8,
A9R - A11R
Note :
28-Pin Plastic TSOP
(K Type)
Function
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
DQ1 - DQ8
Data Input/Data Output
OE
Output Enable
WE
Write Enable
VCC
Power Supply (3.3 V)
VSS
Ground (0 V)
The same power supply voltage must be provided to every VCC pin, and the same GND
voltage level must be provided to every VSS pin.
2/17
¡ Semiconductor
MSM51V16805D/DSL
BLOCK DIAGRAM
WE
RAS
OE
Timing
Generator
I/O
Controller
CAS
8
Output
Buffers
8
Input
Buffers
8
DQ1 - DQ8
9
Internal
Address
Counter
A0 - A8
9
A9R - A11R
Column
Address
Buffers
3
9
Refresh
Control Clock
Row
Row
Address 12 DecoBuffers
ders
Word
Drivers
Column Decoders
Sense Amplifiers
8
I/O
Selector
8
8
Memory
Cells
VCC
On Chip
VBB Generator
VSS
3/17
¡ Semiconductor
MSM51V16805D/DSL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
VT
–0.5 to 4.6
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD*
1
W
Operating Temperature
Topr
0 to 70
°C
Storage Temperature
Tstg
–55 to 150
°C
Voltage on Any Pin Relative to VSS
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
(Ta = 0°C to 70°C)
Symbol
Min.
Typ.
Max.
Unit
VCC
3.0
3.3
3.6
V
VSS
0
0
0
V
Input High Voltage
VIH
2.0
—
VCC + 0.3
V
Input Low Voltage
VIL
–0.3
—
0.8
V
Capacitance
(VCC = 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
Symbol
Typ.
Max.
Unit
Input Capacitance
(A0 - A8, A9R - A11R)
CIN1
—
5
pF
Input Capacitance (RAS, CAS, WE, OE)
CIN2
—
7
pF
Output Capacitance (DQ1 - DQ8)
CI/O
—
7
pF
Parameter
4/17
¡ Semiconductor
MSM51V16805D/DSL
DC Characteristics
Parameter
(VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C)
Symbol
Condition
MSM51V16805 MSM51V16805 MSM51V16805
D/DSL-50
D/DSL-60
D/DSL-70 Unit Note
Min.
Max.
Min.
Max.
Min.
Max.
Output High Voltage
VOH IOH = –2.0 mA
2.4
VCC
2.4
VCC
2.4
VCC
V
Output Low Voltage
VOL IOL = 2.0 mA
0
0.4
0
0.4
0
0.4
V
Input Leakage Current
ILI
–10
10
–10
10
–10
10
mA
–10
10
–10
10
–10
10
mA
—
75
—
70
—
65
mA
1, 2
—
2
—
2
—
2
—
0.5
—
0.5
—
0.5
mA
1
—
200
—
200
—
200
mA
1, 5
—
75
—
70
—
65
mA
1, 2
—
5
—
5
—
5
mA
1
—
75
—
70
—
65
mA
1, 2
—
100
—
90
—
80
mA
1, 3
—
400
—
400
—
400
mA
—
300
—
300
—
300
mA
0 V £ VI £ VCC + 0.3 V;
All other pins not
under test = 0 V
Output Leakage Current
ILO
Average Power
Supply Current
ICC1
(Operating)
DQ disable
0 V £ VO £ VCC
RAS, CAS cycling,
tRC = Min.
RAS, CAS = VIH
Power Supply
Current (Standby)
ICC2 RAS, CAS
≥ VCC –0.2 V
RAS cycling,
Average Power
Supply Current
ICC3 CAS = VIH,
(RAS-only Refresh)
tRC = Min.
RAS = VIH,
Power Supply
Current (Standby)
ICC5 CAS = VIL,
DQ = enable
Average Power
Supply Current
ICC6
(CAS before RAS Refresh)
CAS before RAS
RAS = VIL,
Average Power
Supply Current
RAS cycling,
ICC7 CAS cycling,
(Fast Page Mode)
tHPC = Min.
Average Power
tRC = 31.3 ms,
Supply Current
ICC10 CAS before RAS,
tRAS £ 1 ms
(Battery Backup)
1, 4,
5
Average Power
Supply Current
(CAS before RAS
ICCS
RAS £ 0.2 V,
CAS £ 0.2 V
1, 5
Self-Refresh)
Notes : 1.
2.
3.
4.
5.
ICC Max. is specified as ICC for output open condition.
The address can be changed once or less while RAS = VIL.
The address can be changed once or less while CAS = VIH.
VCC – 0.2 V £ VIH £ VCC + 0.3 V, –0.3 V £ VIL £ 0.2 V.
SL version.
5/17
¡ Semiconductor
MSM51V16805D/DSL
AC Characteristics (1/2)
(VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3, 12, 13
Parameter
Random Read or Write Cycle Time
Symbol
MSM51V16805 MSM51V16805 MSM51V16805
D/DSL-50
D/DSL-60
D/DSL-70 Unit Note
Min.
Max.
Min.
Max.
Min.
Max.
104
—
124
—
135
160
25
—
—
30
—
—
Read Modify Write Cycle Time
tRWC
84
110
Fast Page Mode Cycle Time
Fast Page Mode Read Modify Write
Cycle Time
tHPC
20
—
—
—
tHPRWC
58
—
68
—
78
—
ns
Access Time from RAS
tRAC
—
50
—
60
—
70
ns
4, 5, 6
Access Time from CAS
tCAC
—
13
—
15
—
20
ns
4, 5
Access Time from Column Address
Access Time from CAS Precharge
tAA
tCPA
—
—
25
30
—
—
30
35
—
—
35
40
ns
ns
4, 6
4
Access Time from OE
Output Low Impedance Time from CAS
tOEA
tCLZ
—
0
13
—
—
0
15
—
—
0
20
—
ns
ns
4
4
Data Output Hold After CAS Low
tDOH
5
—
5
—
5
—
ns
CAS to Data Output Buffer Turn-off Delay Time
tCEZ
15
15
0
0
20
20
7, 8
13
0
0
ns
tREZ
0
0
13
RAS to Data Output Buffer Turn-off Delay Time
ns
7, 8
OE to Data Output Buffer Turn-off Delay Time
WE to Data Output Buffer Turn-off Delay Time
tOEZ
tWEZ
0
0
13
13
0
0
15
15
0
0
20
20
ns
ns
7
7
Transition Time
Refresh Period
tT
tREF
1
—
50
64
1
—
50
64
1
—
50
64
ns
ms
3
Refresh Period (SL version)
tREF
—
128
—
128
—
128
ms
14
RAS Precharge Time
tRP
30
—
40
—
50
—
ns
RAS Pulse Width
tRAS
50
10,000
60
10,000
70
10,000
ns
RAS Pulse Width (Fast Page Mode with EDO) tRASP
50
100,000
60
100,000
70
100,000
ns
RAS Hold Time
RAS Hold Time referenced to OE
tRSH
tROH
7
10
10
—
—
13
13
—
—
ns
7
—
—
CAS Precharge Time (Fast Page Mode with EDO)
tCP
7
—
10
—
10
—
ns
CAS Pulse Width
tCAS
7
10,000
10
10,000
13
10,000
ns
CAS Hold Time
tCSH
35
—
5
—
—
45
5
—
tCRP
40
5
—
CAS to RAS Precharge Time
—
ns
ns
RAS Hold Time from CAS Precharge
tRHCP
30
—
35
—
40
—
ns
OE Hold Time from CAS (DQ Disable)
tCHO
RAS to CAS Delay Time
tRCD
—
37
25
30
5
14
12
—
50
tRAD
5
14
12
—
45
RAS to Column Address Delay Time
5
11
9
35
ns
ns
ns
Row Address Set-up Time
tASR
0
—
0
—
0
—
ns
Row Address Hold Time
tRAH
7
—
10
—
10
—
ns
Column Address Set-up Time
tASC
0
—
0
—
0
—
ns
Column Address Hold Time
tCAH
7
—
10
—
13
—
ns
tRAL
25
—
30
—
35
—
ns
Column Address to RAS Lead Time
tRC
ns
ns
ns
ns
5
6
6/17
¡ Semiconductor
MSM51V16805D/DSL
AC Characteristics (2/2)
(VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3, 12, 13
Parameter
Symbol
MSM51V16805MSM51V16805 MSM51V16805
D/DSL-50
D/DSL-60
D/DSL-70 Unit Note
Min.
Max.
Min.
Max.
Min.
Max.
Read Command Set-up Time
tRCS
0
—
0
—
0
—
ns
Read Command Hold Time
tRCH
0
—
0
—
0
—
ns
9
Read Command Hold Time referenced to RAS
Write Command Set-up Time
tRRH
tWCS
0
0
—
—
0
0
—
—
0
0
—
—
ns
ns
9
10
Write Command Hold Time
tWCH
7
—
10
—
13
—
ns
Write Command Pulse Width
tWP
7
—
10
—
10
—
ns
WE Pulse Width (DQ Disable)
tWPE
7
—
10
—
10
—
ns
OE Command Hold Time
OE Precharge Time
tOEH
tOEP
7
—
10
—
13
—
ns
7
—
10
—
10
—
ns
OE Command Hold Time
tOCH
7
—
10
—
10
—
ns
Write Command to RAS Lead Time
Write Command to CAS Lead Time
tRWL
tCWL
7
7
—
—
10
10
—
—
13
13
—
—
ns
ns
Data-in Set-up Time
Data-in Hold Time
OE to Data-in Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
RAS to WE Delay Time
tDS
tDH
tOED
tCWD
tAWD
tRWD
0
7
13
30
42
67
—
—
—
—
—
—
0
10
15
34
49
79
—
—
—
—
—
—
0
13
20
44
59
94
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
11
11
CAS Precharge WE Delay Time
tCPWD
47
—
54
—
64
—
ns
10
CAS Active Delay Time from RAS Precharge
tRPC
5
—
5
—
5
—
ns
RAS to CAS Set-up Time (CAS before RAS)
RAS to CAS Hold Time (CAS before RAS)
tCSR
tCHR
5
10
—
—
5
10
—
—
5
10
—
—
ns
ns
WE to RAS Precharge Time (CAS before RAS)
WE Hold Time from RAS (CAS before RAS)
RAS to WE Set-up Time (Test Mode)
RAS to WE Hold Time (Test Mode)
tWRP
tWRH
tWTS
tWTH
10
10
10
10
—
—
—
—
10
10
10
10
—
—
—
—
10
10
10
10
—
—
—
—
ns
ns
ns
ns
tRASS
100
—
100
—
100
—
ms
14
tRPS
90
—
110
—
130
—
ns
14
tCHS
–50
—
–50
—
–50
—
ns
14
RAS Pulse Width
(CAS before RAS Self-Refresh)
RAS Precharge Time
(CAS before RAS Self-Refresh)
CAS Hold Time
(CAS before RAS Self-Refresh)
10
10
10
7/17
¡ Semiconductor
Notes:
MSM51V16805D/DSL
1. A start-up delay of 200 µs is required after power-up, followed by a minimum of eight
initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device
operation is achieved.
2. The AC characteristics assume tT = 2 ns.
3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals.
Transition times (tT) are measured between VIH and VIL.
4. This parameter is measured with a load circuit equivalent to 1 TTL load and 100 pF.
The output timing reference levels are VOH = 2.0 V and VOL = 0.8 V.
5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met.
tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified
tRCD (Max.) limit, then the access time is controlled by tCAC.
6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met.
tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified
tRAD (Max.) limit, then the access time is controlled by tAA.
7. tCEZ (Max.), tREZ (Max.), tWEZ (Max.) and tOEZ (Max.) define the time at which the
output achieves the open circuit condition and are not referenced to output voltage
levels.
8. tCEZ and tREZ must be satisfied for open circuit condition.
9. tRCH or tRRH must be satisfied for a read cycle.
10. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are
included in the data sheet as electrical characteristics only. If tWCS ≥ tWCS (Min.), then
the cycle is an early write cycle and the data out will remain open circuit (high
impedance) throughout the entire cycle. If tCWD ≥ tCWD (Min.) , tRWD ≥ tRWD (Min.),
tAWD ≥ tAWD (Min.) and tCPWD ≥ tCPWD (Min.), then the cycle is a read modify write
cycle and data out will contain data read from the selected cell; if neither of the above
sets of conditions is satisfied, then the condition of the data out (at access time) is
indeterminate.
11. These parameters are referenced to the CAS leading edge in an early write cycle, and
to the WE leading edge in an OE control write cycle, or a read modify write cycle.
12. The test mode is initiated by performing a WE and CAS before RAS refresh cycle.
This mode is latched and remains in effect until the exit cycle is generated.
The test mode specified in this data sheet is a 2-bit parallel test function. CA8 is not
used. In a read cycle, if all internal bits are equal, the DQ pin will indicate a high
level. If any internal bits are not equal, the DQ pin will indicate a low level.
The test mode is cleared and the memory device returned to its normal operating
state by performing a RAS-only refresh cycle or a CAS before RAS refresh cycle.
13. In a test mode read cycle, the value of access time parameters is delayed for 5 ns for the
specified value. These parameters should be specified in test mode cycle by adding the
above value to the specified value in this data sheet.
14. Only SL version.
8/17
E2G0102-17-41O
,,,
,
,
,,,,
,,
¡ Semiconductor
MSM51V16805D/DSL
TIMING WAVEFORM
Read Cycle
tRC
tRP
tRAS
RAS
VIH –
VIL –
tCRP
tCSH
tCRP
CAS
tRCD
VIH –
VIL –
tRAD
tASR
Address
VIH –
VIL –
tRSH
tCAS
tRAH tASC
tRAL
tCAH
Column
Row
tRCS
WE
VIH –
VIL –
tAA
tROH
tREZ
tOEA
VIH –
OE
VIL –
tCAC
tRAC
DQ
VOH –
tOEZ
Open
VOL –
tRCH
tRRH
tCEZ
Valid Data-out
tCLZ
"H" or "L"
Write Cycle (Early Write)
tRC
tRP
tRAS
RAS
VIH –
VIL –
tCRP
tCRP
VIH –
CAS
VIL –
VIH –
VIL –
tASC
Row
tCAS
tCAH
tRAL
Column
tWCS
WE
tRSH
tRAD
tRAH
tASR
Address
tCSH
tRCD
VIH –
VIL –
tWCH
tWP
tCWL
tRWL
VIH –
OE
VIL –
tDS
DQ
VIH –
VIL –
tDH
Valid Data-in
Open
"H" or "L"
9/17
,,,
¡ Semiconductor
MSM51V16805D/DSL
Read Modify Write Cycle
tRWC
tRAS
VIH –
RAS
VIL –
tRCD
tRSH
tCAS
VIH –
VIL –
tASR
VIH –
Address
VIL –
WE
VIH –
VIL –
OE
VIH –
VIL –
tRAH
tASC
tCAH
Column
Row
tRAD
tRWD
tAA
tOEA
tOED
tCAC
VI/OH–
VI/OL–
tCWL
tRWL
tWP
tCWD
tAWD
tRCS
tRAC
DQ
tCRP
tCSH
tCRP
CAS
tRP
tCLZ
tOEZ
Valid
Data-out
tOEH
tDS
tDH
Valid
Data-in
"H" or "L"
10/17
,,,,
,
,
¡ Semiconductor
MSM51V16805D/DSL
Fast Page Mode Read Cycle (Part-1)
tRASP
RAS
VIH –
VIL –
tRHCP
tCRP
CAS
WE
tHPC
tRCD
tCP
tCP
tCAS
VIH –
VIL –
tCAS
tCAS
tRAD
tASR
Address
tRP
VIH –
VIL –
tASC
tRAH
Row
tCSH
tCAH
tASC
Column
tASC
tCAH
Column
Column
tRCS
tRRH
VIH –
VIL –
tCHO
DQ
tOCH
tRAC
tAA
OE
tCAH
tOEP
tAA
VIH –
VIL –
tCPA
tOEA
tCAC
VOH –
VOL –
tOEZ
tCAC
Valid
Data-out
Valid
Data-out
tCLZ
tOEA
tOEA
tCAC
tDOH
tOEP
tAA
tOEZ
Valid*
Data-out
* : Same Data,
tREZ
Valid*
Data-out
"H" or "L"
Fast Page Mode Read Cycle (Part-2)
tRASP
RAS
VIH –
VIL –
tRHCP
WE
OE
DQ
VIH –
VIL –
VIH –
VIL –
tCP
tRAH
tCSH
tASC tCAH
Row
tASC
Column
tCAH
Column
tRCS
tCAS
tASC
tCAH
Column
tRCS
tRAC
tAA
VIH –
VIL –
VOH –
VOL –
tCP
tCAS
tRAD
tASR
Address
tRCD
tCAS
VIH –
VIL –
tCRP
tHPC
tCRP
CAS
tRP
tRCH
tWPE
tAA
tAA
tCPA
tOEA
tCAC
tCLZ
tWEZ
Valid
Data-out
tCAC
tDOH
tCAC
Valid
Data-out
tCEZ
Valid
Data-out
"H" or "L"
11/17
,,,
,
,
¡ Semiconductor
MSM51V16805D/DSL
Fast Page Mode Write Cycle (Early Write)
tRP
tRASP
RAS
VIH –
VIL –
CAS
tRAD
tRAH
tASR
VIH –
VIL –
WE
VIH –
VIL –
OE
VIH –
VIL –
DQ
VIH –
VIL –
tCP
tCAS
tCSH
tASC tCAH
Row
tHPC
tCP
tCAS
VIH –
VIL –
Address
tHPC
tRCD
tCRP
tASC
Column
tWCS
tCAH
tWCS
tDH
Valid
Data-in
Column
tWCH
tDS
tRSH
tCAH
tASC
Column
tWCH
tDS
tCAS
tDH
Valid
Data-in
tWCS
tWCH
tDS
tDH
Valid
Data-in
"H" or "L"
Fast Page Mode Read Modify Write Cycle
tRASP
RAS
tRWD
VIH –
VIL –
tCRP
CAS
VIH –
VIL –
VIH –
VIL –
tCWD
tRAD
tASR
Address
tCP
tRCD
Row
tCWL
tCAH
tRCS
tAWD
VIH –
VIL –
tAWD
tDS tWP
VIH –
VIL –
tCAC
VI/OH –
VI/OL –
tOED
tOEZ
Valid
Data-out
tCLZ
tRWL
tCWD
tRAC
tOEA
DQ
tCPA
tCAH
Column
tAA
OE
tASC
Column
tRCS
WE
tCPWD
tHPRWC
tRAH
tASC
tAA
tOEH
tDS
tOED
tOEA
tCAC
tDH
Valid
Data-in
tOEZ
Valid
Data-out
tCLZ
tWP
tOEH
tDH
Valid
Data-in
"H" or "L"
12/17
_
^
]
K
S
R
Q
P
O
N
M
F
:
¡ Semiconductor
MSM51V16805D/DSL
RAS-Only Refresh Cycle
t RC
tRP
tRAS
RAS
V IH –
V IL –
tRPC
tCRP
CAS
V IH –
V IL –
tRAH
tASR
Address
V IH –
V IL –
Row
tCEZ
DQ
V OH –
V OL –
Open
Note: WE, OE = "H" or "L"
"H" or "L"
CAS before RAS Refresh Cycle
tRC
t RP
RAS
tRP
tRAS
VIH –
VIL –
t RPC
tRPC
tCP
CAS
tCSR
tCHR
tWRP
tWRH
VIH –
VIL –
WE
VIH –
VIL –
DQ
VOH –
VOL –
tWRP
t CEZ
Open
Note: OE, Address = "H" or "L"
"H" or "L"
13/17
,
,,
,,
,
,,
¡ Semiconductor
MSM51V16805D/DSL
Hidden Refresh Read Cycle
tRC
tRAS
RAS
CAS
VIH –
VIL –
tCRP
VIH –
VIL –
tASR
Address
WE
OE
VIH –
VIL –
tRSH
tRCD
tRAD
tASC
tRRH
tRAL
VIH –
VIL –
tAA
tROH
tOEA
VIH –
VIL –
VOH –
VOL –
tCHR
Column
tRCS
tRAC
DQ
tRP
tCAH
tRAH
Row
tRC
tRAS
tRP
tCEZ
tCAC
tCLZ
tOEZ
Open
tREZ
Valid Data-out
"H" or "L"
Hidden Refresh Write Cycle
tRC
tRAS
RAS
CAS
Address
VIH –
VIL –
VIH –
VIL –
VIH –
VIL –
tCRP
tASR
tRCD
tRAD
tASC
tRAH
VIH –
VIL –
OE
VIH –
VIL –
DQ
VIH –
VIL –
tRSH
tCAH
tRP
tCHR
tRAL
Column
Row
tWCS
WE
tRC
tRAS
tRP
tRWL
tWCH
tWP
tDS
tDH
Valid Data-in
"H" or "L"
14/17
M
L
K
_
^
]
\
S
R
Q
P
O
F
¡ Semiconductor
MSM51V16805D/DSL
CAS before RAS Self-Refresh Cycle
tRC
tRP
RAS
CAS
VIH –
VIL –
t RPC
tCP
VIH –
VIL –
WE
VIH –
VIL –
DQ
VOH –
VOL –
tRAS
tCSR
tCHR
tWTS
tWTH
t OFF
Open
Note: OE, Address = "H" or "L"
Only SL version
"H" or "L"
,
Test Mode Initiate Cycle
tRC
tRP
RAS
VIH –
VIL –
tRPC
tCP
CAS
tRAS
tCSR
VIH –
VIL –
tWTS
WE
tCHR
tWTH
VIH –
VIL –
tOFF
DQ
VOH –
VOL –
Open
Note: OE, Address = "H" or "L"
"H" or "L"
15/17
¡ Semiconductor
MSM51V16805D/DSL
PACKAGE DIMENSIONS
(Unit : mm)
SOJ28-P-400-1.27
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
1.30 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
16/17
¡ Semiconductor
MSM51V16805D/DSL
(Unit : mm)
TSOPII28-P-400-1.27-K
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
0.51 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
17/17
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