Semiconductor MSM531632E 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit MASKROM DESCRIPTION The OKI MSM531632E is a high-speed CMOS Mask ROM that can electrically switch between 1,048,576-word x 16-bit or 2,097,152-word x 8-bit configurations. The MSM531622E operates on a single 5.0V power supply and is TTL compatible. The chip's asynchronous I/O requires no external clock assuring easy operation. A power-down mode provides low power dissipation when the chip is not selected. The CE and OE pins are provided as control signals that permit three-stated output allowing easy memory expansion on a system bus.The MSM531622E is suited for use as large capacity fixed memory for microcomputers and data terminals. FEATURES 3.0V or 3.3V single power supply 1,048,576-word x 16-bit / 2,097,152-word x 8-bit Access Time - Current Consumption 200ns - 20mA (When power supply is 3.0V±0.3V) 150ns - 30mA (When power supply is 3.3V±0.3V) Tri-state output configurations Internal powerdown function Package: 42-PIN PLASTIC DIP (DIP42-P-600) (MSM531632E-xxRS) 44-PIN PLASTIC SOP (SOP44-P-600-K) (MSM531632E-xxGS-K) 48-PIN PLASTIC TSOP (TSOP48-P-550-K) (MSM531632E-xxTS-K) 16MEPROM (42-PIN) pin compatible 1 MSM531632E PIN CONFIGURATION NC 1 48 NC NC 2 47 NC NC 1 44 NC NC 3 46 NC 43 A19 42 A8 A18 4 A17 5 45 A19 A18 1 42 A19 A18 2 A17 2 41 A8 A17 3 A7 3 A6 4 40 A9 39 A10 A7 4 A6 5 41 A9 A7 6 40 A10 A6 7 43 A9 42 A10 A5 5 38 A11 A5 6 39 A11 A5 8 41 A11 A4 9 40 A12 44 A8 A4 6 37 A12 A4 7 38 A12 A3 7 36 A13 A3 8 37 A13 A3 10 39 A13 A2 8 35 A14 A2 9 36 A14 A2 11 38 A14 A1 9 34 A15 A1 10 35 A15 A1 12 37 A15 34 A16 33 BYTE A0 13 CE 14 36 A16 VSS 15 34 VSS 33 D15/A-1 A0 10 33 A16 A0 11 CE 11 32 BYTE CE 12 VSS 12 OE 13 31 VSS VSS 13 30 D15/A-1 OE 14 32 VSS D0 14 29 D7 D0 15 30 D7 D0 17 32 D7 D8 15 28 D14 D8 16 29 D14 D8 18 31 D14 D1 16 27 D6 D1 17 28 D6 D1 19 30 D6 D9 20 29 D13 31 D15/A-1 OE 16 35 BYTE D9 17 26 D13 D9 18 27 D13 D2 18 25 D5 D2 19 26 D5 D2 21 28 D5 D10 22 D3 23 27 D12 D11 24 25 VCC D10 19 24 D12 D10 20 D3 20 23 D4 D3 21 25 D12 24 D4 D11 21 22 VCC D11 22 23 VCC 42 PIN DIP 44 PIN SOP Pin Name D15/A-1 A0 to A19 48 PIN TSOP Function Data output / address input Address input D0 to D15 Data output CE Chip enable OE 26 D4 Output enable BYTE VCC, VSS Mode switch NC No Connect Power supply 2 MSM531632E BLOCK DIAGRAM VCC VSS A-1 BYTE Output Switching Between 8 and 16 bits CE CE A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 OE OE Control Memory Cell Matrix 1,048,576-Word x 16 or 2,097,152 x 8 X Decoder Address Buffer Multiplexer Y Decoder Output Buffer D0 D2 D1 D4 D3 D6 D5 D8 D7 D10 D12 D14 D9 D11 D13 D15 FUNCTION TABLE 3 CE H OE X BYTE X A-1/D15 D0 to D7 D8 to D15 X Hi-Z Hi-Z L H X X Hi-Z Hi-Z L L H Input Inhibited (D15) D0 to D7 D8 to D15 L L L L D0 to D7 Hi-Z L L L H D8 to D15 Hi-Z DOUT Mode LSB MSB Hi-Z — — 16 bit A0 A19 8 bit A-1 A19 MSM531632E ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol VCC Conditions Input Voltage VI to VSS Output Voltage VO Power Dissipation Operating Temperature PD Topr Storage Temperature Tstg Parameter Power Supply Voltage Limits Unit –0.3 to 7 –0.3 to VCC +0.5 V V –0.3 to VCC +0.5 V 1.0 W Per Package Topr =25°C 0 to 70 °C –55 to 150 °C Recommended Operating Conditions (V CC=3.0V) Parameter Symbol Conditions Limits Unit Min. Typ. Max. 3.3 V VCC — 2.7 3.0 VSS — 0.0 0.0 0.0 V "H" Input Voltage VIH — 3.0 6.0 V "L" Input Voltage VIL Topr — 2.0 –0.3 0.0 0.8 V — 0 — 70 °C Power Supply Voltage Operating Temperature Recommended Operating Conditions (V CC=3.0V) Parameter Symbol Conditions Limits Min. Typ. Max. Unit VCC — 3.0 3.3 3.6 V VSS — 0.0 0.0 0.0 V "H" Input Voltage VIH — 3.3 "L" Input Voltage — 0.0 6.0 0.6 V VIL Topr 2.0 –0.3 — 0 — 70 °C Power Supply Voltage Operating Temperature V 4 MSM531632E DC CHARACTERISTICS (V CC=3.0V±0.3V) ( Ta = 0 to 70°C) Parameter Symbol Conditions Max. — Unit VOH1 IOH = –100uA VOH2 IOH = –400uA VCC – 0.4 — — VOL1 IOL = 100uA 0.1 IOI = 1.0mA — — — VOL2 — 0.4 Input Leakage Current ILI –10 — 10 Output Leakage Current ILO VI = 0 to VCC VO = 0 to VCC CE = VIH MIN V uA –10 — 10 uA Power Supply Current (Operating) ICC CE = VIL,OE = VIH,tC = 200ns — — 20 mA ICCSC CE = VCC–0.2V — — 10 uA ICCST CE = VIH MIN — — 50 uA "H" Output Voltage "L" Output Voltage Power Supply Current (Standby) DC CHARACTERISTICS (V CC=3.3V±0.3V) Parameter Symbol Conditions V V V (VCC = 5V±10%, Ta = 0 to 70°C) Limits Typ. — – 0.1 Min. Max. — Unit VOH1 IOH = –100uA VCC VOH2 IOH = –400uA — — VOL1 IOL = 100uA IOI = 1.0mA VCC – 0.4 — — — 0.1 — ILI VI = 0 to VCC –10 — 0.4 10 uA Output Leakage Current ILO VO = 0 to VCC CE = VIH MIN –10 — 10 uA Power Supply Current (Operating) ICC CE = VIL,OE = VIH,tC = 150ns — — 30 mA ICCSC CE = VCC–0.2V — — 10 uA ICCST CE = VIH MIN — — 50 uA "H" Output Voltage "L" Output Voltage Input Leakage Current Power Supply Current (Standby) 5 Limits Typ. — Min. VCC – 0.1 VOL2 V V V V MSM531632E AC CHARACTERISTICS Timing conditions Parameter Transtion Time Conditions VIH=3.0V, VIL=0.0V tr=tf=5ns Timing Reference Level Input Voltage=1.5V Output Voltage=0.8V&2.0V Load Condition CL=50pF Input Signal Level Read Cycle (Vcc=3.0V±0.3V) (Ta = 0 to 70°C) Symbol Conditions tC Address Access time tACC CE Access time Parameter Rated Value Unit Min. Typ. — 200 — — ns — — — 200 ns tCE — — — 200 ns OE Access time tOE — — — 100 ns CE Output Disable time tCHZ — 0 — 70 ns OE Output Disable time tOHZ — 0 — 60 ns Output Hold time tOH — 0 — — ns Cycle time Max. Read Cycle (Vcc=3.3V±0.3V) (Ta = 0 to 70°C) Parameter Symbol Conditions Value Min. Typ. Max. Unit tC — 150 — — ns Address Access time tACC — — — 150 ns CE Access time tCE — — — 150 ns OE Access time tOE — — — 80 ns CE Output Disable time tCHZ — 0 — 60 ns OE Output Disable time tOHZ — 0 — 50 ns Output Hold time tOH — 0 — — ns Cycle time 6 MSM531632E Read Cycle (Note 1) tC Address tACC tOH OE tOHZ tOE (Note 3) DOUT Read Cycle (Note 2) tC CE tCHZ tCE (Note 3) OE tOE DOUT Note ) 1. CE is low level. 2. Address is fixed before or at the same time when CE level falls. 3. tCHZ & tOHZ indicate the time until floating. They are not determined by the output level. I/O CAPACITANCE Parameter Symbol Conditions Rated Value Input Capacitance CI VI=0V Min. — Output Capacitance CO VO=0V — 7 Unit Typ. — Max. 8 pF — 10 pF Semiconductor NOTICE The information contained herein can change without notice owing to product and/or technical improvements. Before using the product, please make sure that the information being referred to is up-todate. The outline of action and examples for application circuits described herein have been chosen as an explanation for the standard action and performance of the product. When planning to use the product, please ensure that the external conditions are reflected in the actual circuit, assembly, and program designs. When designing your product, please use our product below the specified maximum ratings and within the specified operating ranges including, but not limited to, operating voltage, power dissipation, and operating temperature. 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