OKI MSM6389C 1,048,576-word x 1-bit solid-state recorder data register Datasheet

E2D0033-39-21
¡ Semiconductor
MSM6389C
¡ Semiconductor
This version: MSM6389C
Feb. 1999
Previous version: May. 1997
1,048,576-Word x 1-Bit Solid-State Recorder Data Register
GENERAL DESCRIPTION
The MSM6389C is a solid-state recorder data register in 1,048,576 words x 1 bit configuration.
The MSM6389C has a built-in internal address generator circuit allowing continuous serial read/
write operation by single external clock input. The internal address is automatically incremented by
one by read/write operation.
Address designation in units of 1024 words in the direction of words is possible by an external serial
address input.
The built-in refresh timer and refresh counter have eliminated the need of an external refresh circuit
and realized a low power consumption.
18-pin plastic QFJ is used as the package and the operating temperature range is between 0°C and
70°C.
The MSM6389C is suitable for storing large capacity data with battery backup. A solid state recording
and playback system can easily be constructed in combination with OKI’s voice synthesizer ICs.
FEATURES
• Configuration:
1,048,576 x 1 bit
• Serial access operation:
Serial access time
1.5 ms (3.0 ms)
Serial read/write cycle time
2.0 ms (4.0 ms)
Fast mode read/write cycle time 0.4 ms (0.4 ms)
Times in parentheses indicate ones in self-refresh mode.
• Low current consumption:
100 mA max. (for data holding, VCC=4.0V)
• Wide operating supply voltage range: Single 3.5 to 5.5V
• Auto-refresh/self-refresh changeable
• Package:
18-pin plastic QFJ (QFJ18-P-R290-1.27) (Product name: MSM6389CJS)
1/11
¡ Semiconductor
MSM6389C
BLOCK DIAGRAM
TEST
VCC
SAD
Load
Clock
Clock
SAS
FAM
RWCK
VSS
1,048,576
Data Register
DIN
I/O
Controller
DOUT
Y-decoder/sense Amp
Refresh
Counter
Timing
Generator
RFSH
RS/A
X-address
Counter
X-decoder/
Driver
Sin
Address
Register
Pout
Address
Multiplexer
CS
VBB
Generator
Y-address Counter
Reset Clock
Write
Clock
Generator
WE
Clock
Refresh
Timer
TEST
TAS
PIN CONFIGURATION (TOP VIEW)
WE DIN VSS DOUT
2
1
18 17
16 TEST
TEST 3
CS 4
15 NC
NC 5
14 NC
SAD 6
13 RWCK
SAS 7
12 FAM
8
9
10
TAS VCC RS/A
11
RFSH
NC: No connection
18-Pin Plastic QFJ
2/11
¡ Semiconductor
MSM6389C
PIN DESCRIPTIONS
Pin
Symbol
1
DIN
Data input
Write enable
Description
2
WE
3, 16
TEST
Test input
4
CS
Chip select
6
SAD
Serial address data
7
SAS
TAS
Serial address strobe
Power supply (+5V)
8
Transfer address strobe
9
VCC
10
RS/A
Self-refresh/auto-refresh select
11
RFSH
Refresh clock input
12
FAM
Fast access mode select
13
17
RWCK
Read/write clock
Data output
18
VSS
DOUT
Ground (0V)
3/11
¡ Semiconductor
MSM6389C
ABSOLUTE MAXIMUM RATINGS
Symbol
Condition
Rating
Unit
Terminal Voltage
Parameter
VT
Ta = 25°C, relative to VSS
–1.0 to +7.0
V
Output Short-Circuit Current
IOS
Ta = 25°C
50
mA
Power Dissipation
PD
Ta = 25°C
1
W
Operating Temperature
Top
—
0 to 70
°C
Storage Temperature
TSTG
—
–55 to +150
°C
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
Parameter
VCC
3.5
4.5
5.5
V
Supply Voltage
VSS
0
0
0
V
"H" Input Voltage
VIH
VCC – 0.5
VCC
VCC + 0.5
V
"L" Input Voltage
VIL
–0.5
0
+0.5
V
ELECTRICAL CHARACTERISTICS
DC Characteristics
(VCC = 3.5 V to 5.5 V, Ta = 0 to 70°C)
Symbol
Condition
Min.
Max.
Unit
"H" Output Voltage
Parameter
VOH
IOH = –0.5 mA
VCC – 0.5
—
V
"L" Output Voltage
VOL
IOL = 0.5 mA
—
0.4
V
Input Leakage Current
ILI
VI = 0 V to VCC
–1
+1
mA
Output Leakage Current
ILO
VO = 0 V to VCC
–1
+1
mA
Supply Current (in operating state)
ICC1
VCC = 4 V, tRWC = 2 µs
—
5
mA
Supply Current (in standby state)
ICC2
VCC = 4 V
—
100
mA
Supply Current (FAM)
ICC3
VCC = 4 V, tRWC = 0.4 ms
—
15
mA
4/11
¡ Semiconductor
MSM6389C
AC Characteristics
(VCC = 3.5 V to 5.5 V, Ta = 0 to 70°C)
Parameter
Symbol
MSM6389C-SELF MSM6389C-AUTO
Min.
Max.
Min.
Max.
Unit
Refresh Cycle
tREF
—
—
—
100
ms
Read/Write Cycle Time
tRWC
4,000
—
2,000
—
ns
Access Time
tACC
—
3,000
—
1,500
ns
Output Turn-off Delay Time
tOFF
0
50
0
50
ns
Input Signal Rise/Fall Time
tT
3
50
3
50
ns
RWCK Precharge Time
tRWP
1,000
—
500
—
ns
RWCK Pulse Width
tRW
3,000
10,000
1,500
10,000
ns
SAS Cycle Time
tSSC
100
—
100
—
ns
SAS Pulse Width
tSAS
50
—
50
—
ns
SAS Precharge Time
tSAP
50
—
50
—
ns
Address Setup Time
tAS
0
—
0
—
ns
Address Hold Time
tAH
50
—
50
—
ns
TAS Setup Time
tATS
50
—
50
—
ns
TAS to RWCK Setup Time
tTRS
50
—
50
—
ns
TAS Pulse Width
tTAS
50
—
50
—
ns
Read Command Setup Time
tRRS
0
—
0
—
ns
Read Command Hold Time
tRRH
50
—
50
—
ns
Write Command Setup Time
tWRS
0
—
0
—
ns
Write Command Hold Time
tWRH
50
—
50
—
ns
Write Command Pulse Width
tWP
50
—
50
—
ns
WE to RWCK Lead Tme
tRWL
50
—
50
—
ns
tDS
0
—
0
—
ns
Data Setup Time
tDH
50
—
50
—
ns
RWCK to WE Delay Time
tRWD
100
—
100
—
ns
RFSH Setup Time
tRFS
—
—
500
—
ns
RFSH Precharge Time
tRFP
—
—
500
—
ns
RFSH Pulse Width
tRF
—
—
1,500
10,000
ns
RFSH RWCK Precharge Time
tRRP
—
—
500
—
ns
Fast Mode Cycle Time
tFC
400
—
400
—
ns
Fast RWCK Mode Access Time
tFAC
—
300
—
300
ns
Fast RWCK Precharge Time
tFCP
100
—
100
—
ns
Fast Mode RWCK Pulse Width
tFR
300
—
300
—
ns
Fast Mode Setup Time
tFS
0
—
0
—
ns
Data Hold Time
Fast Mode Hold Time
tFH
50
—
50
—
ns
Fast Mode Width
tFCC
4,000
100,000
2,000
100,000
ns
Slow Mode Setup Time
tSS
0
—
0
—
ns
Slow Mode Hold Time
tSH
50
—
50
—
ns
Note: Switching to the fast mode should be made satisfying the timings of tFS and tSS at the "L" level
of RWCK.
5/11
¡ Semiconductor
MSM6389C
,
,,
TIMING DIAGRAMS
Read/Write/Read Modify Write Cycle
CS
tRWC
tRW
RWCK
tRWF
tRW
tSSC
tSAP
tSAS
tTRS
SAS
tAH
tAS
SAD
A0
A1
A2
A9
tATS
tTAS
TAS
tRWL
tRRS
tRRH
tDS
tDH
DIN
DOUT
tWRS
tWP
WE
tDH
tDS
DY1
tACC
tWRH
tRWD
DY2
tOFF
XnY0
XnY1
High-Z
6/11
¡ Semiconductor
MSM6389C
Auto-Refresh Mode
CS
TAS
RS/A
RWCK
tRFS
tRRP
WE
DIN
DOUT
XnY0 XnY1 XnY2
XnY4
XnY5 XnY6 XnY7
RFSH
tRF
tRFP
7/11
,
¡ Semiconductor
MSM6389C
Fast Access Mode
CS
SAS
SAD
TAS
tFR
tFCP
RWCK
tFS
tFCC
tSS
tSH
FAM
tFAC
DOUT
XnY0
Yn+1 Yn+3 Ym+1 Ym+3 Ym+4 – Y1021 Y1023 Y0Y2 Y3Y4 Xn+1Y5
XnYn Yn+2
Ym+2
Ym+5 Y1022 Xn+1 Y1
Xn+1Y6
8/11
¡ Semiconductor
MSM6389C
FUNCTIONAL DESCRIPTION
Serial Address Input (SAD)
Pin for inputting the start address for read/write. Address data can be input in units of 1024 words.
The 1,024 address data can be input as 10-bit (A0-A9) serial from the SAD pin.
Serial Address Strobe (SAS)
Pin for the clock used to store the serial address data into the internal register.
Address Transfer Strobe (TAS)
Input pin for setting the serial address data stored in the address register to the internal address
counter.
When the TAS falls, the Y address is set to address 0.
Read/Write Clock (RWCK)
Input pin for the data register information read/write clock.
Internal operation starts at the falling edge of RWCK. The information in the data register is output
to the DOUT pin in the read mode, and the information at the DIN pin is written into the data register
in the write mode. The internal address counter is automatically incremented when RWCK falls.
Write Enable (WE)
Input pin for selecting the read mode, write mode or read modify write mode.
The read mode is set when WE is "H", and the write mode is set when WE is "L". When WE falls from
"H" to "L" while RWCK is active, the read modify write mode is set.
Data Input (DIN)
Input pin for write data.
The information at the data input pin is stored at the falling edge of RWCK in the write mode, and
at the falling edge of WE in the read modify write mode.
Data Output (DOUT)
The data output pin is always kept in the high impedance state when RWCK or CS is kept at "H".
When "H" or "L" information is read in the read operation, the output pin is set to "H" to "L" and holds
the read information until RWCK is again set to "H". In the early write mode the output pin maintains
the high impedance state, so I/O common operation by connecting DIN and DOUT is possible.
Chip Select (CS)
Input pin for disabling all input and output pins. This pin enables parallel use of multiple
MSM6389Cs by connecting the data input and output pins.
Self/Auto Refresh Select (RS/A)
Pin for selecting a refresh mode in order to retain memory cell data.
If the RS/A pin is set to "L" level, the self-refresh mode is selected and no external refresh control is
required. If the RS/A pin is set to "H" level, the auto-refresh mode is selected and refresh operation
is required to retain memory cell data.
Refresh Clock Input (RFSH)
Input pin for controlling the external refresh when the auto refresh mode is selected. When the autorefresh mode is selected, 1024 refresh operations are required within 100ms via the RFSH pin while
the RWCK is at "H" level.
9/11
¡ Semiconductor
MSM6389C
Fast Access Mode Select (FAM)
Pin for fast read/write operations. Fast read/write is possible by keeping the FAM pin at "L" level.
The fast access mode is set or released by inputting "L" level or "H" level to the FAM pin when
the RWCK pin is at "L" level, and when tFS and tSS are satisfied.
When 1024-word data access is complete, be sure to insert a normal cycle in order to increment the
X address.
Test (TEST)
The TEST pin is fixed to "H" level.
Turning the power ON
To stabilize the device, it is required to pause for over 100ms after the VCC reaches the specified
voltage. Then it is needed to add eight or more RWCK cycles (read cycles or pseudo data write cycles).
10/11
¡ Semiconductor
MSM6389C
PACKAGE DIMENSIONS
(Unit : mm)
QFJ18-P-R290-1.27
Spherical surface
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
0.50 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, TQFP, LQFP, SOJ, QFJ (PLCC), SHP, and BGA are surface mount type
packages, which are very susceptible to heat in reflow mounting and humidity absorbed in
storage. Therefore, before you perform reflow mounting, contact Oki’s responsible sales person
on the product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
11/11
E2Y0002-29-11
NOTICE
1.
The information contained herein can change without notice owing to product and/or
technical improvements. Before using the product, please make sure that the information
being referred to is up-to-date.
2.
The outline of action and examples for application circuits described herein have been
chosen as an explanation for the standard action and performance of the product. When
planning to use the product, please ensure that the external conditions are reflected in the
actual circuit, assembly, and program designs.
3.
When designing your product, please use our product below the specified maximum
ratings and within the specified operating ranges including, but not limited to, operating
voltage, power dissipation, and operating temperature.
4.
Oki assumes no responsibility or liability whatsoever for any failure or unusual or
unexpected operation resulting from misuse, neglect, improper installation, repair, alteration
or accident, improper handling, or unusual physical or electrical stress including, but not
limited to, exposure to parameters beyond the specified maximum ratings or operation
outside the specified operating range.
5.
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right, etc. is granted by us in connection with the use of the product and/or the information
and drawings contained herein. No responsibility is assumed by us for any infringement
of a third party’s right which may result from the use thereof.
6.
The products listed in this document are intended for use in general electronics equipment
for commercial applications (e.g., office automation, communication equipment,
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MS-DOS is a registered trademark of Microsoft Corporation.
Copyright 1999 Oki Electric Industry Co., Ltd.
Printed in Japan
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