ON MSRF860 Switchmode soft recovery power rectifier Datasheet

MSR860, MSRF860
SWITCHMODEt Soft
Recovery Power Rectifiers
Plastic TO−220 Package
These state−of−the−art devices are designed for use as free wheeling
diodes in variable speed motor control applications and switching
power supplies.
Features
• Soft Recovery with Guaranteed Low Reverse Recovery Charge
•
•
•
•
•
(QRR) and Peak Reverse Recovery Current (IRRM)
150°C Operating Junction Temperature
Epoxy meets UL 94 V−0 @ 0.125 in
Low Forward Voltage
Low Leakage Current
Pb−Free Package is Available
http://onsemi.com
SOFT RECOVERY
POWER RECTIFIER
8.0 AMPERES, 600 VOLTS
1
4
3
4
Mechanical Characteristics:
4
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
Leads Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
600
V
IO
8.0
A
Peak Repetitive Forward Current (Rated
VR, Square Wave, 20 kHz, TC = 125°C)
IFRM
16
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
100
A
Tstg, TC
−65 to +150
°C
TJ
−65 to +150
°C
Parameter
Symbol
Value
Unit
MSR860
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
RqJC
RqJA
1.6
72.8
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 125°C)
Storage/Operating Case Temperature
Operating Junction Temperature
1
1
3
TO−220AC
CASE 221B
STYLE 1
MARKING DIAGRAMS
AY WWG
MSR860
KA
A
Y
WW
G
KA
THERMAL CHARACTERISTICS
MSRF860
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
RqJC
RqJA
°C/W
4.75
75
June, 2008 − Rev. 5
Device
1
AY WWG
MSRF860
KA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2008
3
TO−220 FULLPAK
CASE 221E
STYLE 1
Package
Shipping
MSR860
TO−220AC
50 Units/Rail
MSR860G
TO−220AC
(Pb−Free)
50 Units/Rail
MSRF860G
TO−220FP
(Pb−Free)
50 Units/Rail
Publication Order Number:
MSR860/D
MSR860, MSRF860
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (IF = 8.0 A) (Note 1)
Maximum
Typical
VF
Maximum Instantaneous Reverse Current (VR = 600 V)
Maximum
Typical
IR
Maximum Reverse Recovery Time (Note 2)
(VR = 400 V, IF = 8.0 A, di/dt = 200 A/ms)
trr
Maximum
Typical
Value
Unit
TJ = 25°C
TJ = 150°C
1.7
1.4
1.3
1.1
TJ = 25°C
TJ = 150°C
10
2.0
1000
80
TJ = 25°C
TJ = 125°C
120
95
190
125
V
mA
ns
Typical Recovery Softness Factor
(VR = 400 V, IF = 8.0 A, di/dt = 200 A/ms)
s = tb/ta
2.5
3.0
Maximum Peak Reverse Recovery Current
(VR = 400 V, IF = 8.0 A, di/dt = 200 A/ms)
IRRM
5.8
8.3
A
Maximum Reverse Recovery Charge
(VR = 400 V, IF = 8.0 A, di/dt = 200 A/ms)
QRR
350
700
nC
1. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%
2. TRR measured projecting from 25% of IRRM to zero current
TYPICAL ELECTRICAL CHARACTERISTICS
100
100
IR , REVERSE CURRENT ( mA)
TJ = 150°C
125°C
10
100°C
1
25°C
0.1
100°C
100
200
300
400
500
600
VR, REVERSE VOLTAGE (VOLTS)
25°C
10
Figure 2. Typical Reverse Current
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
TJ = 150°C
1
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
14
12
dc
10
SQUARE WAVE
8
6
4
RATED VR APPLIED
2
0
0
40
80
120
VF, FORWARD VOLTAGE DROP (VOLTS)
TC, CASE TEMPERATURE (°C)
Figure 1. Typical Forward Voltage
Figure 3. Current Derating, Case
http://onsemi.com
2
160
MSR860, MSRF860
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
TYPICAL ELECTRICAL CHARACTERISTICS
3.0
2.5
2.0
dc
1.5
SQUARE WAVE
1.0
RATED VR APPLIED
0.5
0
0
40
80
120
TA, AMBIENT TEMPERATURE (°C)
160
16
14
12
10
SQUARE WAVE
6
4
TJ = 150°C
2
0
0
2
4
6
8
10
12
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating, Ambient
250
TJ = 25°C
VR = 400 V
140
120
t rr , REVERSE RECOVERY TIME (ns)
t rr , REVERSE RECOVERY TIME (ns)
14
Figure 5. Power Dissipation
160
IF = 16 A
100
80
8A
60
4A
40
20
0
100
TJ = 125°C
VR = 400 V
200
IF = 16 A
150
8A
100
4A
50
0
200
300
400
500
100
200
dIF/dt (A/mS)
IRRM, PEAK REVERSE RECOVERY CURRENT (AMPS)
IF = 16 A
6
8A
4A
4
2
TJ = 25°C
VR = 400 V
0
200
300
400
500
Figure 7. Typical Reverse Recovery Time
8
100
300
dIF/dt (A/mS)
Figure 6. Typical Reverse Recovery Time
I RRM , PEAK REVERSE RECOVERY CURRENT (AMPS)
dc
8
400
500
14
12
IF = 16 A
10
8
4A
8A
6
4
TJ = 125°C
VR = 400 V
2
0
100
dIF/dt (A/mS)
200
300
400
dIF/dt (A/mS)
Figure 9. Typical Peak Reverse Recovery
Current
Figure 8. Typical Peak Reverse Recovery
Current
http://onsemi.com
3
500
MSR860, MSRF860
TYPICAL ELECTRICAL CHARACTERISTICS
900
Q RR , REVERSE RECOVERY CHARGE (nC)
Q RR , REVERSE RECOVERY CHARGE (nC)
350
300
250
IF = 16 A
200
8A
150
4A
100
TJ = 25°C
VR = 400 V
50
0
100
200
300
400
800
IF = 16 A
700
600
8A
500
400
4A
300
200
TJ = 125°C
VR = 400 V
100
0
500
100
200
dIF/dt (A/mS)
400
500
Figure 11. Typical Reverse Recovery Charge
Figure 10. Typical Reverse Recovery Charge
250
90
IF = 16 A
80
E OFF , SWITCHING OFF LOSSES ( m J)
E OFF , SWITCHING OFF LOSSES ( m J)
300
dIF/dt (A/mS)
70
60
50
8A
40
30
4A
20
TJ = 25°C
VR = 400 V
10
IF = 16 A
200
150
8A
100
4A
50
TJ = 125°C
VR = 400 V
0
0
100
200
300
dlF/dt (A/mS)
400
500
100
200
300
dIF/dt (A/mS)
400
500
Figure 13. Typical Switching Off Losses
Figure 12. Typical Switching Off Losses
r(t), TRANSIENT THERMAL RESPONSE
(NORMALIZED)
1.0
D = 0.5
0.1
0.1
0.05
P(pk)
0.01
t1
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
ZqJC(t) = r(t) RqJC
RqJC = 1.6°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.01
0.01
0.1
1.0
10
t, TIME (ms)
Figure 14. Thermal Response (MSR860)
http://onsemi.com
4
100
1000
MSR860, MSRF860
r(t), TRANSIENT THERMAL RESPONSE
(NORMALIZED) (°C/W)
10
D = 0.5
1.0
0.1
0.2
0.1
0.05
0.02
P(pk)
0.01
0.01
t1
SINGLE PULSE
0.001
0.000001
0.00001
t2
DUTY CYCLE, D = t1/t2
0.0001
0.001
0.01
t, TIME (s)
0.1
1.0
ZqJC(t) = r(t) RqJC
RqJC = 1.6°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
10
100
1000
Figure 15. Thermal Response, (MSRF860) Junction−to−Case (RqJC)
r(t), TRANSIENT THERMAL RESPONSE
(NORMALIZED) (°C/W)
100
10
D = 0.5
0.2
0.1
0.05
0.02
1.0
0.01
P(pk)
0.1
0.01
0.001
0.000001
t1
SINGLE PULSE
0.00001
t2
DUTY CYCLE, D = t1/t2
0.0001
0.001
0.01
t, TIME (s)
0.1
1.0
ZqJC(t) = r(t) RqJC
RqJC = 1.6°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
10
Figure 16. Thermal Response, (MSRF860) Junction−to−Ambient (RqJA)
http://onsemi.com
5
100
1000
MSR860, MSRF860
PACKAGE DIMENSIONS
TO−220 TWO−LEAD
CASE 221B−04
ISSUE E
C
B
Q
F
T
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
F
G
H
J
K
L
Q
R
S
T
U
4
A
1
U
3
H
K
L
R
D
J
G
INCHES
MIN
MAX
0.595
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.190
0.210
0.110
0.130
0.014
0.025
0.500
0.562
0.045
0.060
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
MILLIMETERS
MIN
MAX
15.11
15.75
9.65
10.29
4.06
4.82
0.64
0.89
3.61
4.09
4.83
5.33
2.79
3.30
0.36
0.64
12.70
14.27
1.14
1.52
2.54
3.04
2.04
2.79
1.14
1.39
5.97
6.48
0.000
1.27
STYLE 1:
PIN 1.
2.
3.
4.
CATHODE
N/A
ANODE
CATHODE
TO−220 FULLPAK, 2−LEAD
CASE 221E−01
ISSUE A
SEATING
PLANE
−T−
−B−
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
S
Q
U
A
1 2 3
H
−Y−
K
G
N
L
J
R
M
B
M
MILLIMETERS
MIN
MAX
15.67
16.07
9.96
10.36
4.50
4.90
0.60
1.00
3.08
3.28
2.54 BSC
2.98
3.38
0.45
0.64
12.68
14.27
1.14
1.52
5.08 BSC
3.10
3.50
2.56
2.96
2.34
2.74
6.48
6.88
STYLE 1:
PIN 1. CATHODE
2. N/A
3. ANODE
D 2 PL
0.25 (0.010)
INCHES
MIN
MAX
0.617
0.633
0.392
0.408
0.177
0.193
0.024
0.039
0.121
0.129
0.100 BSC
0.117
0.133
0.018
0.025
0.499
0.562
0.045
0.060
0.200 BSC
0.122
0.138
0.101
0.117
0.092
0.108
0.255
0.271
Y
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MSR860/D
Similar pages