MSRT150120(A)D thru MSRT150160(A)D Silicon Standard Recovery Diode VRRM = 1200 V - 1600 V IF(AV) = 150 A Features • High Surge Capability • Types from 1200 V to 1600 V VRRM Three Tower Package • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified MSRT150120(A)D MSRT150140(A)D MSRT150160(A)D Unit VRRM 1200 1400 1600 V VRMS 848 990 1131 V VDC Tj Tstg 1200 -55 to 150 -55 to 150 1400 -55 to 150 -55 to 150 1600 -55 to 150 -55 to 150 V °C °C Parameter Symbol Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Conditions Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions MSRT150120(A)D MSRT150140(A)D MSRT150160(A)D Unit Average forward current (per leg) IF(AV) TC = 140 °C 150 150 150 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 2250 2250 2250 A Maximum instantaneous forward voltage (per leg) VF IFM = 150 A, Tj = 25 °C 1.1 1.1 1.1 V Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C 10 10 10 μA Tj = 150 °C 5 5 5 mA 0.40 0.40 0.40 °C/W Parameter Thermal characteristics Maximum thermal resistance, junction - case (per leg) Feb 2016 RΘjc Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 MSRT150120(A)D thru MSRT150160(A)D Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2 MSRT150120(A)D thru MSRT150160(A)D Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3