Micron MT48LC8M16A2 Synchronous dram Datasheet

PRELIMINARY‡
128Mb x16
SDRAM Addendum
SYNCHRONOUS
DRAM
MT48LC8M16A2 – 2 MEG X 16 X 4 BANKS
FEATURES
ADDENDUM CHANGES
• Supports PC100 and PC133 functionality
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal pipelined operation; column address can
be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto Precharge, includes CONCURRENT AUTO
PRECHARGE, and Auto Refresh Modes
• Self Refresh Mode; standard and low power
• LVTTL-compatible inputs and outputs
• Single +3.3V ±0.3V power supply
• 64ms, 4,096-cycle refresh
The standard 128Mb SDRAM data sheets also pertain to the x16 device and should be referenced for a
complete description of SDRAM functionality and
operating modes. However, to meet the faster speed
grades, some of the AC timing parameters are slightly
different. This addendum data sheet will concentrate
on the key differences required to support the
enhanced speeds.
The Micron 128Mb data sheet provides full specifications and functionality unless specified herein.
OPTION
For the latest data sheet, please refer to the Micron Web
site: www.micron.com/dramds
8 MEG X 16
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
MARKING
• Configuration
8 Meg x 16 (2 Meg x 16 x 4 banks)
WRITE Recovery (tWR)
t
WR = “2 CLK”1
• Package
Plastic Package – OCPL2
54-pin TSOP II (400 mil)
• Timing (Cycle Time)
6.0ns @ CL = 3
• Self Refresh
Standard
• Operating Temperature Range
Commercial (0oC to +70oC)
8M16
A2
2 Meg x 16 x 4 banks
4K
4K (A0–A11)
4 (BA0, BA1)
512 (A0–A8)
KEY TIMING PARAMETERS
TG
SPEED
GRADE
CLOCK
FREQUENCY
ACCESS
TIME
CL = 3*
SETUP
TIME
HOLD
TIME
-6A
-6A
167 MHz
5.4ns
1.5ns
0.8ns
None
None
NOTE:
1. Refer to Micron Technical Note: TN-48-05.
2. Off-center parting line.
Part Number:
MT48LC8M16A2TG-6A
x16 Addendum
MT48lc8m16a2_addendum.fm - Rev. 7/02
‡PRODUCTS
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.
AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
PRELIMINARY
128Mb x16
SDRAM Addendum
IDD SPECIFICATIONS AND CONDITIONS
Notes: 1, 5, 6, 11, 13; notes appear in the standard data sheet; VDD/VDDQ = +3.3V ±0.3V
PARAMETER/CONDITION
Operating Current: Active Mode;
Burst = 2; READ or WRITE; tRC = tRC (MIN)
Standby Current: Power-Down Mode;
All banks idle; CKE = LOW
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active
after tRCD met;
No accesses in progress
Operating Current: Burst Mode; Continuous
burst; READ or WRITE; All banks active
Auto Refresh Current
CKE = HIGH; CS# = HIGH
Self Refresh Current:
CKE ≤ 0.2V
x16 Addendum
MT48lc8m16a2_addendum.fm - Rev 7/02
SYMBOL
-6A
UNITS
NOTES
IDD1
170
mA
3, 18,
19, 32
IDD2
2
mA
32
IDD3
50
mA
3, 12,
19, 32
IDD4
165
mA
t
IDD5
330
mA
t
IDD6
3
mA
Standard
IDD7
2
mA
3, 18,
19, 32
3, 12,
18, 19,
32, 33
4
RFC = tRFC (MIN)
RFC = 15.625µs
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.
PRELIMINARY
128Mb x16
SDRAM Addendum
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
Notes 5, 6, 8, 9,11; Notes appear on in the standard data sheet
AC CHARACTERISTICS
-6A
PARAMETER
SYMBOL
CL = 3
Access time from CLK (pos. edge)
MIN
t
AC(3)
MAX
UNITS
NOTES
5.4
ns
27
Address hold time
t
AH
0.8
ns
Address setup time
t
AS
1.5
ns
CLK high-level width
t
CH
2.5
ns
CLK low-level width
t
CL
2.5
ns
CK(3)
6
ns
CL = 3
Clock cycle time
t
CKE hold time
t
CKH
0.8
ns
CKE setup time
t
CKS
1.5
ns
CS#, RAS#, CAS#, WE#, DQM hold time
t
CMH
0.8
ns
CS#, RAS#, CAS#, WE#, DQM setup time
t
CMS
1.5
ns
Data-in hold time
t
DH
0.8
ns
Data-in setup time
t
1.5
ns
DS
CL = 3
Data-out high-impedance time
5.4
t
HZ(3)
ns
Data-out low-impedance time
t
LZ
1
ns
Data-out hold time (load)
t
OH
3
ns
OHN
1.8
ns
Data-out hold time (no load)
t
ACTIVE to PRECHARGE command
t
RAS
42
t
RC
60
ns
RCD
18
ns
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
t
Refresh period (4,096 rows)
t
AUTO REFRESH period
t
ns
t
RP
18
ns
RRD
12
ns
T
0.3
tWR
1 CLK +
6ns
12
67
t
Transition time
WRITE recovery
Exit SELF REFRESH to ACTIVE command
t
XSR
1.2
28
ms
60
t
time1
64
REF
10
ns
RFC
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
120,000
23
7
ns
ns
ns
ns
25
20
NOTE:
1. Auto precharge mode only. The precharge timing budget (tRP) begins 6ns for -6A after the first clock delay, after the last WRITE is
executed. May not exceed limit set for precharge mode.
x16 Addendum
MT48lc8m16a2_addendum.fm - Rev 7/02
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.
PRELIMINARY
128Mb x16
SDRAM Addendum
AC FUNCTIONAL CHARACTERISTICS
Notes appear in the standard data sheet.
PARAMETER
SYMBOL
-6A SPEED
UNITS
NOTES
CCD
1
t
CKED
1
t
14
CKE to clock enable or power-down exit setup mode
t
PED
1
t
14
DQM to input data delay
t
DQD
0
t
17
DQM to data mask during WRITEs
t
DQM
0
t
17
DQM to data high-impedance during READs
t
DQZ
2
t
17
WRITE command to input data delay
t
DWD
0
t
17
Data-in to ACTIVE command
t
DAL
5
t
Data-in to PRECHARGE command
t
DPL
2
t
15, 211
16, 21
Last data-in to burst STOP command
t
BDL
1
t
17
Last data-in to new READ/WRITE command
t
1
t
17
Last data-in to PRECHARGE command
t
RDL
2
t
16, 21
LOAD MODE REGISTER command to ACTIVE or
REFRESH command
Data-out to high-impedance from PRECHARGE
command (CL=3)
t
MRD
2
t
26
ROH(3)
3
t
17
READ/WRITE command to READ/WRITE command
t
t
CKE to clock disable or power-down entry mode
CDL
t
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
17
NOTE:
1. The Note 21 in the standard data sheet does not apply for this speed grade and should read “Based on tCK = 6ns”
DATA SHEET DESIGNATION
Preliminary: This data sheet contains initial characterization limits that are subject to change upon full
characterization of production devices.
®
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
E-mail: [email protected], Internet: http://www.micron.com, Customer Comment Line: 800-932-4992
Micron and the M logo are registered trademarks and the Micron logo is a trademark of Micron Technology, Inc.
x16 Addendum
MT48lc8m16a2_addendum.fm - Rev 7/02
4
©2002, Micron Technology Inc.
Similar pages