Toshiba MT4S102T Uhf-shf low noise amplifier application Datasheet

MT4S102T
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type
MT4S102T
UHF-SHF Low Noise Amplifier Application
Unit:mm
1.2±0.05
FEATURES
3
P8
1
Absolute Maximum Ratings (Ta = 25°C)
TESQ
Symbol
Rating
Unit
Collector-Base voltage
VCBO
6
V
Collector-Emitter voltage
VCEO
3
V
Emitter-Base voltage
VEBO
1.2
V
Collector-Current
IC
20
mA
Base-Current
IB
10
mA
Collector Power dissipation
PC
60
mW
Junction temperature
Tj
150
°C
Tstg
−55~150
°C
Storage temperature Range
0.8±0.05
1. Collector
2. Emitter
3. Base
4. Emitter
2
Characteristics
2
0.52±0.05
4
0.12±0.05
Marking
1
High Gain:|S21e|2=16.0dB (@f=2GHz)
4
•
1.2±0.05
Low Noise Figure :NF=0.58dB (@f=2GHz)
3
0.9±0.05
•
JEDEC
JEITA
TOSHIBA
Weight: 0.0015 g
2-1G1B
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2007-11-01
MT4S102T
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition Frequency
Insertion Gain
Noise Figure
Symbol
Test Condition
Min
Typ.
Max
Unit
VCE=2V, IC=15mA, f=2GHz
21
25
⎯
GHz
2
VCE=2V, IC=15mA, f=2GHz
13.5
16.0
⎯
dB
2
VCE=2V, IC=15mA, f=5.2GHz
⎯
9.0
⎯
dB
NF(1)
VCE=2V, IC=10mA, f=2GHz
⎯
0.58
0.85
dB
NF(2)
VCE=2V, IC=10mA, f=5.2GHz
⎯
1.4
⎯
dB
Min
Typ.
Max
Unit
fT
|S21e| (1)
|S21e| (2)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector Cut-off Current
ICBO
VCB=6V, IE=0
⎯
⎯
1
µA
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
⎯
⎯
1
µA
DC Current Gain
hFE
VCE=2V, IC=15mA
200
⎯
400
-
Output Capacitance
Cob
VCB=2V, IE=0, f=1MHz
⎯
0.43
0.6
pF
Reverse Transfer Capacitance
Cre
VCB=2V, IE=0, f=1MHz (Note 1)
⎯
0.17
0.25
pF
Note 1: Cre is measured by 3 terminal method with capacitance bridge.
Caution:
This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of
fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.
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MT4S102T
IC-VCE
20
1000
COMMON EMITTER
Ta=25℃
IB=70µA
DC Current Gain hFE
Collector-current IC(mA)
25
hFE-IC
60µA
50µA
15
40µA
10
30µA
20µA
5
10µA
4µA
0
0.0
1.0
2.0
3.0
100
10
0.1
4.0
Collector-Emitter voltage VCE(V)
25
COMMON EMITTER
VCE=2V
Ta=25℃
1
0.1
0.01
0.001
0.2
0.4
100
VCE=2V
1V
20
15
10
5
f=1GHz
Ta=25℃
0
0.0
0.6
0.8
1.0
1
Base-Emitter voltage VBE(V)
10
100
Collector-current IC(mA)
|S21e|2-IC
fT-IC
20
35
Transition Frequency fT(GHz)
VCE=2V
Insertion Gain |S21e|2(dB)
10
|S21e|2-IC
Insertion Gain |S21e|2(dB)
Collector-current IC(mA)
10
1
Collector-current IC(mA)
IC-VBE
100
COMMON EMITTER
VCE=2V
Ta=25℃
1V
15
10
5
f=2GHz
Ta=25℃
0
1
10
100
30
VCE=2V
1V
25
20
15
10
f=2GHz
Ta=25℃
5
0
1
Collector-current IC(mA)
10
100
Collector-current IC(mA)
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MT4S102T
NF,Ga-IC
0.4
Ga
1.6
Noise Figure NF(dB)
0.5
18
1.8
IE=0
f=1MHz
Ta=25℃
Cob
0.3
0.2
Cre
0.1
1.4
14
1.2
12
1.0
10
0.8
0.1
1
0.6
VCE=2V
f=2GHz
Ta=25℃
0.4
1
10
Collector-Base voltage VCB(V)
8
NF
0.2
0.0
16
10
6
4
Associated Gain Ga(dB)
0.6
Output Capacitance Cob(pF)
Reverse Transfer Capacitance Cre(pF)
Cre,Cob-VCB
2
100
Collector-current IC(mA)
Collector Power dissipation PC(mW)
PC-Ta
100
75
60
50
25
0
0
25
50
75
100 125 150 175
Ambient temperature Ta(℃)
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2007-11-01
MT4S102T
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-11-01
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