Austin MT5C6405C-35/IT 16k x 4 sram sram memory array Datasheet

SRAM
MT5C6405
Austin Semiconductor, Inc.
16K x 4 SRAM
PIN ASSIGNMENT
(Top View)
SRAM MEMORY ARRAY
24-Pin DIP (C)
(300 MIL)
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-86859
• MIL-STD-883
A5
A6
A7
A8
A9
A10
A11
A12
A13
CE\
OE\
Vss
FEATURES
• High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
Vcc
A4
A3
A2
A1
A0
NC
DQ4
DQ3
DQ2
DQ1
WE\
A5
NC
NC
Vcc
NC
28-Pin LCC (EC)
3 2 1 28 27
OPTIONS
MARKING
• Timing
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
-12
-15
-20
-25
-35
-45*
-55*
-70*
• Package(s)
Ceramic DIP (300 mil)
Ceramic LCC
C
EC
DQ1
WE\
NC
Vss
OE\
GENERAL DESCRIPTION
No. 106
No. 204
The Austin Semiconductor SRAM family employs
high-speed, low-power CMOS designs using a four-transistor
memory cell. Austin Semiconductor SRAMs are fabricated
using double-layer metal, double-layer polysilicon
technology.
For flexibility in high-speed memory applications, Austin
Semiconductor offers chip enable (CE\) and output enable
(OE\) capability. These enhancements can place the outputs
in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is
accomplished when WE\ remains HIGH and CE\ and OE\ go
LOW. The device offers a reduced power standby mode when
disabled. This allows system designs to achieve low standby
power requirements.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TTL compatible.
L
*Electrical characteristics identical to those provided for the 35ns
access devices.
For more products and information
please visit our web site at
www.austinsemiconductor.com
MT5C6405
Rev. 2.1 06/05
NC
A4
A3
A2
A1
A0
DQ4
DQ3
DQ2
13 14 15 16 17
• Operating Temperature Ranges
Industrial (-40oC to +85oC)
IT
Military (-55oC to +125oC)
XT
• 2V data retention/low power
26
25
24
23
22
21
20
19
18
A6 4
A7 5
A8 6
A9 7
A10 8
A11 9
A12 10
A13 11
CE\ 12
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
SRAM
MT5C6405
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
VCC
I/O CONTROL
D
ROW DECODER
A
A
A
A
A
A
A
A
A
GND
1,048,576-BIT
MEMORY ARRAY
Q
CE\
(LSB)
OE\
WE\
POWER
DOWN
COLUMN DECODER
(LSB)
A A A A A A A A A A
TRUTH TABLE
MODE
STANDBY
READ
READ
WRITE
MT5C6405
Rev. 2.1 06/05
OE\
X
L
H
X
CE\
H
L
L
L
WE\
X
H
H
L
DQ
HIGH-Z
Q
HIGH-Z
D
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
MT5C6405
Austin Semiconductor, Inc.
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
ABSOLUTE MAXIMUM RATINGS*
Voltage on any Input or DQ Relative to Vss....-0.5V to +7.0V1
Storage Temperature…...................................-65oC to +150oC
Power Dissipation.................................................................1W
Max Junction Temperature..................................................+175°C
Lead Temperature (soldering 10 seconds)........................+260oC
Short Circuit Output Current...........................................20mA
1 All voltage referenced to Vss.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION
Input High (Logic 1) Voltage
CONDITIONS
SYM
MIN
MAX
VIH
2.2
Vcc+0.5V
V
1
VIL
-0.5
0.8
V
1, 2
0V < VIN < VCC
ILI
-10
10
µA
Outputs Disabled
0V < VOUT < VCC
ILO
-10
10
µA
Output High Voltage
IOH = -4.0mA
VOH
2.4
Output Low Voltage
IOL = 8.0mA
VOL
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
UNITS NOTES
0.4
V
1
V
1
CONDITIONS
SYM
-12
-15
MAX
-20
-25
-35
Power Supply
Current: Operating
CE\ < VIL; VCC = MAX
Output Open
Icc
140
125
110
100
90
mA
Power Supply
Current: Standby
CE\ > VIH; VCC = MAX
f = 0 Hz
ISBT1
50
45
40
35
30
mA
CE\ > (VCC -0.2); VCC = MAX
All Other Inputs < 0.2V
or > (VCC - 0.2V), f = 0 Hz
ISBC2
25
25
25
25
25
mA
PARAMETER
UNITS NOTES
3
CAPACITANCE
DESCRIPTION
Input Capacitance
Output Capacitance
MT5C6405
Rev. 2.1 06/05
CONDITIONS
o
TA = 25 C, f = 1MHz
Vcc = 5V
SYM
MAX
UNITS
NOTES
CI
8
pF
4
CO
10
pF
4
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
MT5C6405
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION
READ CYCLE
READ cycle time
Address access time
Chip Enable access time
Output hold from address change
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Chip Enable to power-up time
Chip disable to power-down time
Output Enable access time
Output Enable to output in Low-Z
Output disable to output in High-Z
WRITE CYCLE
WRITE cycle time
Chip Enable to end of write
Address valid to end of write
Address setup time
Address hold from end of write
WRITE pulse width
Data setup time
Data hold time
Write disable to output in Low-Z
Write Enable to output in High-Z
MT5C6405
Rev. 2.1 06/05
-12
-15
-20
-25
-35
SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
tRC
tAA
tACE
tOH
tLZCE
tHZCE
tPU
tPD
tAOE
tLZOE
tHZOE
12
tWC
tCW
tAW
tAS
tAH
tWP
tDS
tDH
12
10
10
0
0
10
7
0
2
0
tLZWE
tHZWE
15
12
12
2
2
20
15
15
2
2
7
0
2
2
8
0
12
6
0
6
7
20
15
15
0
0
15
10
0
2
0
8
15
0
0
35
15
8
10
25
20
20
0
0
20
12
0
2
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
15
25
10
8
15
2
2
0
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
35
35
12
20
8
7
15
12
12
0
0
12
8
0
2
0
2
2
0
0
35
25
25
10
15
7
6
25
20
20
10
35
25
25
0
0
25
15
0
2
0
7
6, 7
6
7
6, 7
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
MT5C6405
Austin Semiconductor, Inc.
+5V
AC TEST CONDITIONS
+5V
480
Input pulse levels ...................................... Vss to 3.0V
Input rise and fall times ......................................... 5ns
Input timing reference levels ................................ 1.5V
Output reference levels ....................................... 1.5V
Output load ................................. See Figures 1 and 2
480
Q
Q
30pF
255
5 pF
255
Fig. 1 Output Load
Equivalent
Fig. 2 Output Load
Equivalent
7.
At any given temperature and voltage condition,
tHZCE is less than tLZCE, and tHZWE is less than tLZWE.
8. WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
11. tRC = Read Cycle Time.
12. CE2 timing is the same as CE1\ timing. The waveform
is inverted.
NOTES
1.
2.
3.
All voltages referenced to VSS (GND).
-3V for pulse width < 20ns
ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
unloaded, and f =
1
Hz.
t
RC (MIN)
4. This parameter is guaranteed but not tested.
5. Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
6. tHZCE, tHZOE and tHZWE are specified with CL = 5pF as
in Fig. 2. Transition is measured ±200mV typical from
steady state voltage, allowing for actual tester RC time
constant.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION
CONDITIONS
VCC for Retention Data
SYM
MIN
MAX
UNITS
NOTES
VDR
2
---
V
1
mA
---
ns
4
ns
4, 11
CE\ > (VCC - 0.2V)
Data Retention Current
VIN > (VCC - 0.2V)
or < 0.2V
VCC = 2V
Chip Deselect to Data
Retention Time
Operation Recovery Time
ICCDR
tCDR
0
tR
tRC
LOW Vcc DATA RETENTION WAVEFORM
DATA RETENTION MODE
VCC
4.5V
VDR > 2V
t CDR
CE\
VIH
VIL
1234
123456789
123
123456789
123
1234
123456789
123
1234
123456789
123
1234
4.5V
tR
V DR
12345678
1234
123
12345678
1234
123
12345678
1234
123
12345678
1234
123
123
123
123
123 DON’T CARE
1234
1234
1234
1234UNDEFINED
MT5C6405
Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
SRAM
MT5C6405
Austin Semiconductor, Inc.
READ CYCLE NO. 1 8, 9
ttRC
RC
ADDRESS
VALID
ttAA
AA
ttOH
OH
DQ
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2 7, 8, 10
ttRC
RC
CE\
ttAOE
AOE
t
HZOE
tHZOE
tLZOE
tLZOE
OE\
ttLZCE
LZCE
tACE
tACE
DQ
tHZCE
tHZCE
HIGH-Z
DATA VALID
ttPU
PU
ttPD
PD
Icc
1234
1234
1234DON’T CARE
1234
1234
1234
1234 UNDEFINED
MT5C6405
Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
SRAM
MT5C6405
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12
(Chip Enabled Controlled)
t
WC
tWC
ADDRESS
tAW
tAW
ttAS
AS
t
AH
tAH
tCW
tCW
CE\
1234567890123456789012
1
1
WE\ 1234567890123456789012
t WP
tWP1
1123456789012345678901234567890121234567890
1123456789012345678901234567890121234567890
t DH
tDH
ttDS
DS
DQ
D
DATA VAILD
Q
HIGH-ZHIGH Z
Q
WRITE CYCLE NO. 2 7, 12, 13
(Write Enabled Controlled)
tWC
tWC
ADDRESS
tAW
tAW
12345678901234567
121
12345678901234567
12
12345678901234567
121
CE\
ttAS
AS
WE\
ttAH
AH
tCW
tCW
12345678901234567890123
1
1212345678901234567890123
112345678901234567890123
t WP
tWP1
123456789
123456789
123456789
tDS
DQ
D
Q
Q
t DH
tDH
DATA VALID
HIGH-Z
HIGH-Z
1234
1234
1234DON’T CARE
1234
12345
12345
12345
12345UNDEFINED
NOTE: Output enable (OE\) is inactive (HIGH).
MT5C6405
Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
SRAM
MT5C6405
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #106 (Package Designator C)
SMD 5962-86859, Case Outline L
D
A
Q
L
E
S1
b2
e
b
eA
c
SYMBOL
A
b
b2
c
D
E
eA
e
L
Q
S1
SMD SPECIFICATIONS
MIN
MAX
--0.200
0.014
0.026
0.045
0.065
0.008
0.018
--1.280
0.220
0.310
0.300 BSC
0.100 BSC
0.125
0.200
0.015
0.060
0.005
---
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C6405
Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
SRAM
MT5C6405
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #204 (Package Designator EC)
SMD 5962-86859, Case Outline U
D1
B2
D2
L2
e
E3
E
E1
E2
h x 45o
D
L
hx45o
B1
D3
A
A1
SYMBOL
A
A1
B1
B2
D
D1
D2
D3
E
E1
E2
E3
e
h
L
L2
SMD SPECIFICATIONS
MIN
MAX
0.060
0.075
0.050
0.065
0.022
0.028
0.072 REF
0.342
0.358
0.200 BSC
0.100 BSC
--0.358
0.540
0.560
0.400 BSC
0.200 BSC
--0.558
0.050 BSC
0.040 REF
0.045
0.055
0.075
0.095
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C6405
Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
MT5C6405
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: MT5C6405C-25L/XT
Device Number
EXAMPLE: MT5C6405EC-15L/IT
Package Speed
Options** Process
Type
ns
Device Number
Package Speed
Options** Process
Type
ns
MT5C6405
C
-12
L
/*
MT5C6405
EC
-12
L
/*
MT5C6405
C
-15
L
/*
MT5C6405
EC
-15
L
/*
MT5C6405
C
-20
L
/*
MT5C6405
EC
-20
L
/*
MT5C6405
C
-25
L
/*
MT5C6405
EC
-25
L
/*
MT5C6405
C
-35
L
/*
MT5C6405
EC
-35
L
/*
MT5C6405
C
-45
L
/*
MT5C6405
EC
-45
L
/*
MT5C6405
C
-55
L
/*
MT5C6405
EC
-55
L
/*
MT5C6405
C
-70
L
/*
MT5C6405
EC
-70
L
/*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
XT = Extended Temperature Range
883C = Full Military Processing
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
** OPTIONS
L = 2V Data Retention/Low Power
MT5C6405
Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
SRAM
Austin Semiconductor, Inc.
MT5C6405
ASI TO DSCC PART NUMBER
CROSS REFERENCE*
ASI Package Designator EC
ASI Package Designator C
ASI Part #
MT5C6805C-35/883C
MT5C6805C-35L/883C
MT5C6805C-45/883C
MT5C6805C-45L/883C
MT5C6805C-55/883C
MT5C6805C-55L/883C
MT5C6805C-70/883C
MT5C6805C-70L/883C
SMD Part #
5962-8685918LA
5962-8685917LA
5962-8685916LA
5962-8685915LA
5962-8685914LA
5962-8685913LA
5962-8685912LA
5962-8685911LA
ASI Part #
MT5C6805EC-35/883C
MT5C6805EC-35L/883C
MT5C6805EC-45/883C
MT5C6805EC-45L/883C
MT5C6805EC-55/883C
MT5C6805EC-55L/883C
MT5C6805EC-70/883C
MT5C6805EC-70L/883C
SMD Part #
5962-8685918UA
5962-8685917UA
5962-8685916UA
5962-8685915UA
5962-8685914UA
5962-8685913UA
5962-8685912UA
5962-8685911UA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
MT5C6405
Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
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