Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET BVDSS ID RDS(ON) MTA06N03J3 25V 80A 6mΩ Features • 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package & Halogen-free package Symbol Outline MTA06N03J3 TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω Repetitive Avalanche Energy@ L=0.05mH (Note 2) Total Power Dissipation @ TC=25℃ Total Power Dissipation @ TC=100℃ Operating Junction and Storage Temperature Range VDS VGS ID ID IDM IAS EAS EAR 25 ±20 80 50 170 53 140 40 83 45 -55~+175 Pd Tj, Tstg Unit V A mJ W °C Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1% MTA06N03J3 CYStek Product Specification Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 2/7 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 1.8 75 Unit °C/W °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS Min. Typ. Max. Unit Test Conditions 25 1 80 - 1.5 5.3 7.6 25 3 ±100 1 25 6 9.5 - V V nA VGS=0V, ID=250μA VDS = VGS, ID=250μA VGS=±20, VDS=0V VDS =20V, VGS =0V VDS =20V, VGS =0V, Tj=125°C VDS =10V, VGS =10V VGS =10V, ID=30A VGS =5V, ID=24A VDS =5V, ID=24A - 53 30 8 17 22 16 65 10 4840 620 435 1.2 - - 32 12 80 170 1.3 - IDSS *ID(ON) *RDS(ON) *GFS Dynamic *Qg(VGS=10V) *Qg(VGS=5V) *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr μA A mΩ S nC ID=30A, VDS=15V, VGS=10V ns VDS=15V, ID=25A, VGS=10V, RGS=2.7Ω pF VGS=0V, VDS=15V, f=1MHz Ω VGS=15mV, VDS=0V, f=1MHz A V ns nC IF=IS, VGS=0V IF=IS, VGS=0, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTA06N03J3 MTA06N03J3 Package TO-252 (RoHS compliant & Halogen-free) Shipping Marking 2500 pcs / Tape & Reel A06N03 CYStek Product Specification Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 3/7 CYStech Electronics Corp. Characteristic Curves ON-REGION CHARACTERISTIC ON- RESISTANCE VARIATION WITH DRAIN CURRENT AND GATE VOLTAGE 100 3 4.5V 7V 5V V GS= 3.5V 4.3V 4V 60 RDS(ON),NORMALIZED I D,DRAIN - SOURCE CURRENT( A ) 80 3.8V 40 3.5V 20 0 0 1 1.5 0.5 VDS ,DRAIN- SOURCEVOLTAGE( V ) 2.5 2 DRAIN - SOURCE ON - RESISTANCE 10V 4.5V 2 5V 5.5V 1.5 6V 7V 10V 1 0.5 3 4V 2.5 0 ID = 30A VGS= 10V ID = 30A 0.020 RDS(ON) ,ON-RESISTANCE(OHM) RDS(ON),NORMALIZED DRAIN - SOURCE ON - RESISTANCE ON-RESISTANCEVARIATION WITH GATE-TO-SOURCEVOLTAGE 0.025 1.4 1.2 1.0 0.8 -50 -25 0 25 50 75 100 125 150 0.015 0.010 TA = 125°C TA = 25°C 0.005 0 175 BODYDIODEFORWARD VOLTAGEVARIATION WITH SOURCE CURRENT AND TEMPERATURE TRANSFERCHARACTERISTICS 60 100 VDS= 10V VGS = 0V I ,REVERSE DRAIN CURRENT( A ) TA = -55 °C 25 °C 80 I D,DRAIN CURRENT( A ) 10 8 6 4 VGS ,GATETO SOURCEVOLTAGE 2 Tj ,JUNCTION TEMPERATURE(°C) 125 °C 60 40 TA = 125°C 10 1 25°C 0.1 -55°C 0.01 S 20 0 100 D 1.6 0.6 80 I ,DRAIN CURRENT( A ) ON- RESISTANCEVARIATION WITH TEMPERATURE 1.8 60 40 20 0 MTA06N03J3 2 1 VGS,GATETO SOURCEVOLTAGE 3 4 5 0.001 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD ,BODYDIODEFORWARD VOLTAGE( V ) CYStek Product Specification Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 4/7 CYStech Electronics Corp. Characteristic Curves(Cont.) CA P A CI T A N CE CH A RA CT ERI ST I CS G A T E C H A R G E C H A R A C T E R IS T IC S 12 10 ID = 3 0 A 4 Ci ss C-CAPACITANCE (pF) VGS ,GATE-SOURCE VOLTAGE (V) 10 V DS =5V 8 10V 15V 6 4 10 3 Co ss Cr ss 10 2 2 f = 1 M Hz V G S= 0 V 0 0 Q g 5 0 60 20 40 ,G A T E C H A R G E (n C ) MAXIMUM SAFEOPERATINGAREA it Lim on) 100 μs Rds( 25 30 SINGLEPULSE RθJC = 1.8°C/W TC = 25°C 2500 1ms POWER( W ) I D,DRAIN CURRENT( A ) 50 10m s 100m s DC 10 20 3000 10μ s 20 15 SINGLEPULSEMAXIMUM POWERDISSIPATION 300 200 100 10 V D S - D RA I N - t o - SO U R CE V LT A G E ( V ) 2000 1500 5 1000 2 1 0.5 VGS = 10V SINGLEPULSE RθJC= 1.8°C/W Tc = 25°C 500 0 0.5 1 2 5 3 20 10 30 50 0.01 0.1 VDS ,DRAIN- SOURCEVOLTAGE 10 1 SINGLEPULSETIME(SEC) 100 1000 Transient Thermal Response Curve r(t),Normalized Effective Transient Thermal Resistance 1 0.5 Duty Cycle = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 Notes: 0.05 DM 0.03 0.02 0.02 0.01 t1 1.Duty Cycle,D = t2 2.R =1.8°C/ W 3.TJ - TC = P * R (t) θJC Single Pulse 0.01 -2 10 θJC 4.R (t)=r(t) * R θJC -1 10 1 10 θJC 100 1000 t 1 ,Time (sec) MTA06N03J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 5/7 Reel Dimension Carrier Tape Dimension MTA06N03J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 6/7 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTA06N03J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 7/7 TO-252 Dimension C A Marking: D B Device Name G F L Date code 3 H E K 2 I Style: Pin 1.Gate 2.Drain 3.Source 1 J 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTA06N03J3 CYStek Product Specification