CYSTEKEC MTC2103BJ4

Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 1/11
CYStech Electronics Corp.
N & P-Channel Enhancement Mode Power MOSFET
MTC2103BJ4
Features
N-CH
P-CH
BVDSS
30V
-30V
ID
8A
-6A
21mΩ
45mΩ
RDSON(MAX)
• Low Gate Charge
• Simple Drive Requirement
• 100% UIS test @ VD=15V, L=0.1mH, VG=10V, IL=7.5A, Rated VDS=30V, for N-CH
• 100% UIS test @ VD=15V, L=0.1mH, VG=-10V, IL=-6A, Rated VDS=-30V, for P-CH
• RoHS compliant & Halogen-free package
Equivalent Circuit
Outline
MTC2103BJ4
TO-252-4L
G：Gate D：Drain
S：Source
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Continuous Drain Current @ TC=25°C
ID
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
IDM
Avalanche Current
IAS
Avalanche Energy @ L=0.1mH, ID=10A(-10A for P-ch),RG=25Ω
EAS
Repetitive Avalanche Energy @ L=0.05mH *2
EAR
Total Power Dissipation (TC=25℃)
Pd
Total Power Dissipation (TC=100℃)
Operating Junction and Storage Temperature Range
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature
Limits
N-channel P-channel
30
±20
8
6
32
15
5
2.5
-30
±20
-6
-5
-24
-15
5
2.5
25
18
-55~+175
Unit
V
A
mJ
W
°C
*2. Duty cycle ≤ 1%
MTC2103BJ4
CYStek Product Specification
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 2/11
CYStech Electronics Corp.
Thermal Data
Parameter
Symbol
Thermal Resistance, Junction-to-case, max
Rth,j-c
Thermal Resistance, Junction-to-ambient, max * 1
Rth,j-a
2
Note : *1 62.5°C/W when mounted on a 1 in pad of 2 oz copper.
Value
6
90
Unit
°C/W
°C/W
N-CH Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1
RDS(ON) *1
Dynamic
Qg(VGS=10V)*1
Qg(VGS=4.5V)*1
Qgs *1
Qgd *1
td(ON) *1
tr
*1
td(OFF) *1
tf *1
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *2
VSD *1
trr *1
Qrr *1
Min.
Typ.
Max.
Unit
Test Conditions
30
1
8
-
1.5
16
18
34
3
±100
1
25
21
42
V
V
S
nA
μA
μA
A
mΩ
mΩ
VGS=0, ID=250μA
VDS =VGS, ID=250μA
VDS =5V, ID=8A
VGS=±20, VDS=0
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
VDS =10V, VGS =10V
VGS =10V, ID=8A
VGS =4.5V, ID=6A
-
11
6
1.2
3.3
11
16
36
20
1115
116
82
-
-
50
2
2.3
9.2
1.2
-
nC
ID=8A, VDS=15V, VGS=10V
ns
VDS=15V, ID=1A, VGS=10V,
RG=6Ω
pF
VGS=0V, VDS=15V, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=IS, VGS=0, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Pulse width limited by maximum junction temperature.
MTC2103BJ4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 3/11
P-CH Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1
RDS(ON) *1
Dynamic
Qg(VGS=-10V)*1
Qg(VGS=-4.5V)*1
Qgs *1
Qgd *1
td(ON) *1
tr
*1
td(OFF) *1
tf *1
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *2
VSD *1
trr *1
Qrr *1
Min.
Typ.
Max.
Unit
Test Conditions
-30
-1
-6
-
-1.5
16
36
60
-3
±100
-1
-25
45
76
V
V
S
nA
μA
μA
A
mΩ
mΩ
VGS=0, ID=-250μA
VDS =VGS, ID=-250μA
VDS =-5V, ID=-6A
VGS=±20, VDS=0
VDS =-24V, VGS =0
VDS =-20V, VGS =0, Tj=125°C
VDS =-5V, VGS =-10V
VGS =-10V, ID=-6A
VGS =-4.5V, ID=-5A
-
10
7.2
2.2
2
5.5
10
28
15
1320
500
460
-
nC
ID=-6A, VDS=-15V, VGS=-10V
ns
VDS=-15V, ID=-1A, VGS=-10V,
RG=6Ω
pF
VGS=0V, VDS=-15V, f=1MHz
-
55
2.2
-2.3
-9.2
-1.2
-
A
V
ns
nC
IF=IS, VGS=0V
IF=IS, VGS=0, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTC2103BJ4
MTC2103BJ4
Package
TO-252
(RoHS compliant & Halogen-free package)
Shipping
Marking
2500 pcs / Tape & Reel
2103
CYStek Product Specification
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 4/11
CYStech Electronics Corp.
Characteristic Curves
N-Channel
On-Resistance Variation with Drain Current and Gate Voltage
On-Region Characteristics
30
V = 10V 6V
7V
2.4
GS
25
2.2
5V
VGS = 3.5 V
20
RDS(ON) -Normalized
Drain-Source On-Resistance
ID - Drain Current(A)
2.0
4.5V
15
4V
10
5
3.5V
1.6
4.5 V
5.0 V
1.4
6.0 V
1.2
7.0 V
1.0
0
1.9
1
4
2
3
VDS - Drain Source Voltage(V)
6
0
5
On-Resistance Variation with Temperature
0.09
I D = 8A
VGS = 10V
12
18
ID - Drain Current(A)
RDS(ON) - On-Resistance( Ω )
1.3
1.0
0.7
0.07
0.06
0.05
0.04
TA = 125°C
0.03
TA = 25°C
0.01
-25
75
0
25
50
TJ - Junction Temperature (° C)
100
125
150
VDS = 10V
10
VGS = 0V
Is - Reverse Drain Current( A )
25° C
TA = -55° C
15
125°C
10
5
0
MTC2103BJ4
6
8
VGS- Gate-Source Voltage( V )
Body Diode Forward Voltage Variation
with Source Current and Temperature
100
25
1
4
2
Transfer Characteristics
30
20
30
ID = 4 A
0.08
1.6
0.4
-50
24
On-Resistance Variation with Gate-to-Source Voltage
0.02
ID - Drain Current(A)
10 V
0.8
0
RDS(on) - Normalized
Drain-Source On-Resistance
4.0 V
1.8
1.5
2.5
2.0
VGS - Gate-Source Voltage( V )
3.0
3.5
TA = 125°C
10
25° C
1
-55° C
0.1
0.01
0.001
0
0.2
0.6
0.8
1.0
0.4
VSD - Body Diode Forward Voltage( V )
1.2
1.4
CYStek Product Specification
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 5/11
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Gate Charge Characteristics
10
f = 1MHz
VGS = 0 V
1350
VDS = 5V
10V
8
1200
Ciss
1050
15V
Capacitance(pF)
VGS - Gate-Source Voltage( V )
ID = 8A
Capacitance Characteristics
1500
6
4
900
750
600
450
300
2
Coss
Crss
150
0
0
4
8
Q g - Gate Charge( nC )
0
12
0
16
Maximum Safe Operating Area
100
50
5
15
10
VDS - Drain-Source Voltage( V )
P( pk ),Peak Transient Power( W )
ID - Drain Current( A )
10
1ms
10ms
100ms
1
1s
10s
DC
VGS= 10V
0.1 Single Pulse
RθJA= 90°C/ W
TA = 25°C
0.01
0.1
1
10
VDS - Drain-Source Voltage( V )
30
Single Pulse
RθJA = 90°C/ W
TA = 25°C
40
30
20
10
0
0.001
100
25
Single Pulse Maximum Power Dissipation
RDS(ON) Limit
100μs
20
0.01
0.1
1
10
100
1000
Transient Thermal Response Curve
1
r( t ),Normalized Effective
Transient Thermal Resistance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
0.02
PDM
0.01
t1
0.01
t2
1.Duty Cycle,D =
t1
t2
Single Pulse
2.RθJA =90°C/ W
3.TJ - TA = P * RθJA (t)
4.R JA (t)=r(t) + RθJA
θ
0.001
10
-4
10
-3
10
-2
10
-1
1
10
100
1000
t 1 ,Time (sec)
MTC2103BJ4
CYStek Product Specification
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 6/11
CYStech Electronics Corp.
Characteristic Curves(Cont.)
P-Channel
Typical Output Characteristics
VGS = -10V
On-Resistance Variation with Drain Current and Gate Voltage
2.4
-6.0V
-5.0V -4.5V
-4.0V
-I DDrain Current( A )
20
15
-3.5V
10
-3.0V
5
3
2
1
-VDS Drain-Source Voltage( V)
4
5
2.2
VGS = -4V
2.0
-4.5V
1.8
-6.0V
1.6
-7.0V
1.4
-8.0V
1.2
-10V
1.0
0.8
0
15
10
-ID Drain Current( A)
5
20
25
On-Resistance Variation with Gate-Source Voltage
On-ResistanceVariationwithTemperature
0.12
1.6
ID =-6A
VGS=-10V
ID= -3A
1.4
0.09
RDS(on) - On-Resistance(Ω)
RDS(ON) Normalized Drain-Source On-Resistance
0
0
RDS(ON) - Normalized Drain-Source On-Resistance
25
1.2
1.0
0.8
-25
0
25
50
75
100
125
TA = 25°C
0.03
0
0.6
-50
TA = 125°C
0.06
150
2
4
8
6
-VGS Gate-Source Voltage(V)
10
° C)
Tj -JunctionTemperature(
Body Diode Forward Voltage Variation with
Source Current and Temperature
Transfer Characteristics
15
VDS= -5.0V
VSD =0V
10
12
125°C
-IS -Reverse Drain Current( A )
-I D -Drain Current( A )
100
25°C
TA = -55°C
9
6
3
0
1
MTC2103BJ4
2
3
-VGS ,Gate-Source Voltage
4
5
1
0.1
TA = 125°C
25°C
-55°C
0.01
0.001
0.0001
0
0.2
0.8
0.4
0.6
-VSD - Body Diode Forward Voltage( V)
1.0
1.2
1.4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 7/11
Characteristic Curves(Cont.)
Gate Charge Characteristics
10
ID =-6A
Ciss
1200
-10V
-VGS ,Gate-Source Voltage( V )
f = 1MHZ
VGS = 0V
1400
-15V
8
1000
Capacitance( pF )
6
4
800
600
Coss
400
Crss
2
200
0
0
0
4
6
Qg ,Gate Charge( nC)
2
8
0
12
10
5
Maximum Safe Operating Area
100
15
20
10
-VDS Drain-Source Voltage( V)
100μs
10
s
1
10m
s
100m
s
1s
SINGLEPULSE
R JA = 90°C/W
TA = 25°C
θ
25
1ms
20
Power( W )
10
30
25
Single Pulse Maximum Power Dissipation
30
RDS(ON)Limit
-ID ,Drain Current( A )
Capacitance Characteristics
1600
VDS =-5V
DC
15
10
0.1
VGS = -10V
SINGLEPULSE
RθJA = 90°C/W
0.01 TA = 25°C
0.1
5
1
10
-VDS ,Drain-Source Voltage( V )
0
0.01
100
0.1
1
Single Pulse Time( sec )
10
100
300
Transient Thermal Response Curve
1
r ( t ) ,Normalized Effective
Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
R
JA
R
JA
(t)= r(t) R
JA
= 90 C/W
P(pk)
t1
t2
SINGLE PULSE
0.001
0.0001
MTC2103BJ4
Tj - TA = P R JA (t)
Duty Cycle,D= t 1 / t 2
0.001
0.01
0.1
t1 , Time( ms )
1
10
100
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 8/11
Reel Dimension
Carrier Tape Dimension
MTC2103BJ4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 9/11
Recommended soldering footprint
Unit : mm
MTC2103BJ4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 10/11
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC2103BJ4
CYStek Product Specification
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 11/11
CYStech Electronics Corp.
TO-252 Dimension
Marking:
Tab
Device Name
Date code
2103
□□□□
Style: Pin 1.Soure 1 2.Gate 1 3.&Tab
Drain 1& Drain 2 4. Source 2 5. Gate 2
4-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J4
Inches
Min.
Max.
0.0826 0.0984
0.0433 0.0512
0.0118 0.0276
0.0217 0.0295
0.0157 0.0315
0.157
0.0236
0.2087 0.2244
0.2638 0.2874
0.0866 0.1181
DIM
A
A1
B
B1
B2
C
D
D2
D3
Millimeters
Min.
Max.
2.10
2.50
1.10
1.30
0.30
0.70
0.55
0.75
0.40
0.80
0.40
0.60
5.30
5.70
6.70
7.30
2.20
3.00
DIM
E
E2
H
L
L1
L2
L3
P
Inches
Min.
Max.
0.2480 0.2638
0.1890 0.2146
0.3622 0.3996
0.0512 0.0669
0.0354 0.0590
0.0197 0.0433
0.0000 0.0118
0.0461 0.0539
Millimeters
Min.
Max.
6.30
6.70
4.80
5.45
9.20
10.15
1.30
1.70
0.90
1.50
0.50
1.10
0.00
0.30
1.17
1.37
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : KFC; Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC2103BJ4
CYStek Product Specification