MICRON MTFC64GJVDN-4MIT

Micron Confidential and Proprietary
4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
Features
e·MMC™ Memory
MTFC4GMVEA-4M IT, MTFC8GLVEA-4M IT, MTFC16GJVEC-4M IT,
MTFC32GJVED-4M IT, MTFC64GJVDN-4M IT
Features
Figure 1: Micron e·MMC Device
• MultiMediaCard (MMC) controller and NAND Flash
• 153- or 169-ball WFBGA/VFBGA/LFBGA (RoHS 6/6compliant)
• VCC: 2.7–3.6V
• VCCQ (dual voltage): 1.65–1.95V; 2.7–3.6V
• Temperature ranges
– Industrial temperature: –40˚C to +85˚C
– Storage temperature: –40˚C to +85˚C
• Typical current consumption
– Standby current: 120µA for 4GB–16GB; 140µA for
32GB; 160µA for 64GB
– Active current (RMS): 80mA (4GB–64GB)
MMC
power
NAND Flash
power
MMC controller
MMC
interface
NAND Flash
MMC-Specific Features
• JEDEC/MMC standard version 4.41-compliant
(JEDEC Standard No. 84-A441) – SPI mode not
supported (see www.jedec.org/sites/default/files/
docs/JESD84-A441.pdf)
– Advanced 11-signal interface
– x1, x4, and x8 I/Os, selectable by host
– MMC mode operation
– Command classes: class 0 (basic); class 2 (block
read); class 4 (block write); class 5 (erase);
class 6 (write protection); class 7 (lock card)
– MMCplus™ and MMCmobile™ protocols
– Temporary write protection
– 52 MHz clock speed (MAX)
– Boot operation (high-speed boot)
– Sleep mode
– Replay-protected memory block (RPMB)
– Secure erase and trim
– Hardware reset signal
– Multiple partitions with enhanced attribute
– Permanent and power-on write protection
– Double data rate (DDR) function
– High-priority interrupt (HPI)
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MMC-Specific Features (Continued)
– Enhanced reliable write
– Configurable reliability settings
– Background operation
– Fully enhanced configurable
– Backward-compatible with previous MMC
modes
• ECC and block management implemented
1
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© 2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Confidential and Proprietary
4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
Features
e·MMC Performance
Table 1: MLC Partition Performance
Part Number
MTFC4GMVEA-4M IT
MTFC8GLVEA-4M IT
MTFC16GJVEC-4M IT
MTFC32GJVED-4M IT
MTFC64GJVDN-4M IT
Units
Sequential write
13.5
20
MB/s
Sequential read
44
44
MB/s
Condition
Note:
1. Sequential access of 1MB chunk. Additional performance data, such as power consumption or timing for different device modes, will be provided in a separate document upon customer request.
Ordering Information
Table 2: Ordering Information
Base Part Number
Density
Package
NAND Flash Type
Shipping Media
MTFC4GMVEA-4M IT
4GB
153-ball WFBGA
11.5mm x 13.0mm x 0.8mm
2 x 16Gb, MLC, 25nm
Tray
MTFC8GLVEA-4M IT
8GB
153-ball WFBGA
11.5mm x 13.0mm x 0.8mm
2 x 32Gb, MLC, 25nm
Tape and reel
Tape and reel
MTFC16GJVEC-4M IT
16GB
169-ball WFBGA
14.0mm x 18.0mm x 0.8mm
2 x 64Gb, MLC, 25nm
MTFC32GJVED-4M IT
32GB
169-ball VFBGA
14.0mm x 18.0mm x 1.0mm
4 x 64Gb, MLC, 25nm
169-ball LFBGA
14.0mm x 18.0mm x 1.4mm
8 x 64Gb, MLC, 25nm
MTFC64GJVDN-4M IT
64GB
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2
Tray
Tray
Tape and reel
Tray
Tape and reel
Tray
Tape and reel
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
Features
Part Numbering Information
Micron®e·MMC memory devices are available in different configurations and densities. Verify valid part numbers
by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 2: Marketing Part Number Chart
MT FC 4G
M
V
x
EA - 0
Micron Technology
M
WT
Production Status
Blank = Production
Product Family
ES = Engineering samples
FC = NAND Flash + controller
MS = Mechanical samples
NAND Flash Density
Operating Temperature Range
Blank = 0°C to 70°C
WT = Standard (–25°C to +85°C)
IT = Extended (–40°C to +85)°C
2G = 2GB
4G = 4GB
8G = 8GB
16G = 16GB
32G = 32GB
SLC Enhanced Area
64G = 64GB
F = 40%
M = 100%
NAND Flash Component
Mark Device
Maximum Boot Size
J
MLC 64Gb, x8, 3.3V (25nm)
0 = 1MB
L
MLC 32Gb, x8, 3.3V (25nm)
1 = 2MB
M
MLC 16Gb, x8, 3.3V (25nm)
2 = 4MB
3 = 8MB
Controller Revision
4 = 16MB
Mark (Rev.) Controller ID
T
Enhanced
Package Codes (Pb-free)
V
Combo
DN = 169 LFBGA 14mm x 18mm x 1.4mm
DQ = 100 LFBGA 14mm x 18mm x 1.4mm
EA = 153 WFBGA 11.5mm x 13mm x 0.8mm
EC = 169 WFBGA 14mm x 18mm x 0.8mm
ED = 169 VFBGA 14mm x 18mm x 1.0mm
Reserved for Future Use
Note:
1. Not all combinations are necessarily available. For a list of available devices or for further information on
any aspect of these products, please contact your nearest Micron sales office.
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4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
General Description
General Description
Micron e·MMC is a communication and mass data storage device that includes a MultiMediaCard (MMC) interface, a NAND Flash component, and a controller on an advanced 11-signal bus, which is compliant with the MMC system specification. Its cost
per bit, small package sizes, and high reliability make it an ideal choice for industrial
applications like infrastructure and networking equipment, PC and servers, a variety of
other industrial products.
The nonvolatile e·MMC draws no power to maintain stored data, delivers high performance across a wide range of operating temperatures, and resists shock and vibration disruption.
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4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
Signal Descriptions
Signal Descriptions
Table 3: Signal Descriptions
Symbol
Type
Description
CLK
Input
Clock: Each cycle of the clock directs a transfer on the command line and on the data line(s). The
frequency can vary between the minimum and the maximum clock frequency.
RST_n
Input
Reset: The RST_n signal is used by the host for resetting the device, moving the device to the preidle state. By default, the RST_n signal is temporarily disabled in the device. The host must set ECSD
register byte 162, bits[1:0] to 0x1 to enable this functionality before the host can use it.
CMD
I/O
Command: This signal is a bidirectional command channel used for command and response transfers. The CMD signal has two bus modes: open-drain mode and push-pull mode (see Operating
Modes). Commands are sent from the MMC host to the device, and responses are sent from the
device to the host.
DAT[7:0]
I/O
Data I/O: These are bidirectional data signals. The DAT signals operate in push-pull mode. By default, after power-on or assertion of the RST_n signal, only DAT0 is used for data transfer. The
MMC controller can configure a wider data bus for data transfer either using DAT[3:0] (4-bit mode)
or DAT[7:0] (8-bit mode). e·MMC includes internal pull-up resistors for data lines DAT[7:1]. Immediately after entering the 4-bit mode, the device disconnects the internal pull-up resistors on the
DAT[3:1] lines. Upon entering the 8-bit mode, the device disconnects the internal pull-ups on the
DAT[7:1] lines.
VCC
Supply
VCC: NAND interface (I/F) I/O and NAND Flash power supply.
VCCQ
Supply
VCCQ: e·MMC controller core and e·MMC I/F I/O power supply.
VSS1
Supply
VSS: NAND I/F I/O and NAND Flash ground connection.
VSSQ1
Supply
VSSQ: e·MMC controller core and e·MMC I/F ground connection.
VDDI
Internal voltage node: At least a 0.1μF capacitor is required to connect VDDI to ground. A 1μF capacitor is recommended. Do not tie to supply voltage or ground.
NC
–
No connect: No internal connection is present.
RFU
–
Reserved for future use: No internal connection is present. Leave it floating externally.
Note:
1. VSS and VSSQ are connected internally.
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4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
153-Ball Signal Assignments
153-Ball Signal Assignments
Figure 3: 153-Ball FBGA (top view, ball down)
1
2
3
6
7
8
9
10
11
12
13
14
A
NC
NC
DAT0
RFU
RFU
NC
NC
NC
NC
NC
NC
NC
B
NC
DAT3 DAT4
DAT5 DAT6 DAT7
NC
NC
NC
NC
NC
NC
NC
NC
C
NC
VDDI
NC
VSSQ
RFU
NC
NC
NC
NC
NC
NC
NC
NC
D
NC
NC
NC
NC
NC
NC
NC
E
NC
NC
NC
RFU
RFU
NC
NC
NC
F
NC
NC
NC
VCC
RFU
NC
NC
NC
G
NC
NC
RFU
VSS
RFU
NC
NC
NC
H
NC
NC
NC
RFU
VSS
NC
NC
NC
J
NC
NC
NC
RFU
VCC
NC
NC
NC
K
NC
NC
NC
RST_n
RFU
NC
NC
NC
L
NC
NC
NC
NC
NC
NC
M
NC
NC
NC
VCCQ
CMD
CLK
NC
NC
NC
NC
NC
NC
NC
NC
N
NC
VSSQ
NC
VCCQ
VSSQ
NC
NC
NC
NC
NC
NC
NC
NC
NC
P
NC
NC
VCCQ
VSSQ
VCCQ
VSSQ
RFU
NC
NC
RFU
NC
NC
NC
NC
Notes:
4
5
DAT1 DAT2
VCCQ
VCC
RFU
VSS
RFU
RFU
VSS
RFU
VCC
1. Some test pads on the device are not shown. They are not solder balls and are for Micron internal use only.
2. Some previous versions of the JEDEC product or mechanical specification had defined
reserved for future use (RFU) balls as no connect (NC) balls. NC balls assigned in the previous specifications could have been connected to ground on the system board. To enable new feature introduction, some of these balls are assigned as RFU in the v4.4 mechanical specification. Any new PCB footprint implementations should use the new ball
assignments and leave the RFU balls floating on the system board.
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4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
169-Ball Signal Assignments
169-Ball Signal Assignments
Figure 4: 169-Ball FBGA (top view, ball down)
1
2
3
A
4
5
7
8
9
10
11
12
1
NC
13
14
NC
NC
NC
NC
B
6
NC
C
D
NC
NC
E
F
G
H
NC
J
NC
DAT3 DAT4
K
NC
VDDI
NC
VSSQ
L
NC
NC
NC
NC
M
NC
NC
NC
RFU
N
NC
NC
NC
P
NC
NC
R
NC
T
RFU
NC
NC
NC
NC
NC
NC
NC
DAT5 DAT6 DAT7
NC
NC
NC
NC
NC
NC
NC
NC
RFU
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
RFU
NC
NC
NC
VCC
RFU
NC
NC
NC
RFU
VSS
RFU
NC
NC
NC
NC
NC
RFU
VSS
NC
NC
NC
NC
NC
NC
RFU
VCC
NC
NC
NC
U
NC
NC
NC
RST_n
RFU
NC
NC
NC
V
NC
NC
NC
NC
NC
NC
W
NC
NC
NC
VCCQ
CMD
CLK
NC
NC
NC
NC
NC
NC
NC
NC
Y
NC
VSSQ
NC
VCCQ
VSSQ
NC
NC
NC
NC
NC
NC
NC
NC
NC
AA
NC
NC
VCCQ
VSSQ
VCCQ
VSSQ
RFU
NC
NC
RFU
NC
NC
NC
NC
NC
DAT0
DAT1 DAT2
RFU
VCCQ
VCC
RFU
VSS
RFU
RFU
VSS
RFU
VCC
AB
AC
AD
NC
AE
NC
AF
NC
AG
NC
AH
Notes:
NC
NC
NC
NC
1. Empty balls do not denote actual solder balls; they are position indicators only.
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4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
169-Ball Signal Assignments
2. Some test pads on the device are not shown. They are not solder balls and are for Micron internal use only.
3. Some previous versions of the JEDEC product or mechanical specification had defined
reserved for future use (RFU) balls as no connect (NC) balls. NC balls assigned in the previous specifications could have been connected to ground on the system board. To enable new feature introduction, some of these balls are assigned as RFU in the v4.4 mechanical specification. Any new PCB footprint implementations should use the new ball
assignments and leave the RFU balls floating on the system board.
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4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
Package Dimensions
Package Dimensions
Figure 5: 153-Ball WFBGA – 11.5mm x 13.0mm x 0.8mm (Package Code: EA)
Seating plane
A
153X Ø0.30
Dimensions apply
to solder balls postreflow on Ø0.30
SMD ball pads.
0.08 A
Ball A1 ID
(covered by SR)
Ball A1 ID
14 12 10 8 6 4 2
13 11 9 7 5 3 1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
6.5 CTR
13 ±0.1
0.5 TYP
0.5 TYP
0.7 ±0.1
6.5 CTR
0.17 MIN
11.5 ±0.1
Note:
1. Dimensions are in millimeters.
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4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
Package Dimensions
Figure 6: 169-Ball WFBGA – 14.0mm x 18.00mm x 0.8mm (Package Code: EC)
Seating plane
A
169X Ø0.3
Dimensions apply to
solder balls post-reflow
on Ø0.30 SMD OSP ball
pads.
0.08 A
Ball A1 ID
Ball A1 ID
14 12 10 8 6 4 2
13 11 9 7 5 3
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
Y
AA
AB
AC
AD
AE
AF
AG
AH
13.5 CTR
6.5 CTR
18 ±0.1
0.7 ±0.1
0.5 TYP
0.5 TYP
6.5 CTR
0.17 MIN
14 ±0.1
Note:
1. Dimensions are in millimeters.
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Micron Confidential and Proprietary
4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
Package Dimensions
Figure 7: 169-Ball VFBGA – 14.0mm x 18.00mm x 1.0mm (Package Code: ED)
Seating plane
A
169X Ø0.3
Dimensions apply to
solder balls post-reflow
on Ø0.30 SMD ball pads.
0.08 A
Ball A1 ID
Ball A1 ID
14 12 10 8 6 4 2
13 11 9 7 5 3
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
Y
AA
AB
AC
AD
AE
AF
AG
AH
13.5 CTR
6.5 CTR
18 ±0.1
0.5 TYP
0.9 ±0.1
0.5 TYP
6.5 CTR
0.17 MIN
14 ±0.1
Note:
1. Dimensions are in millimeters.
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4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
Package Dimensions
Figure 8: 169-Ball LFBGA – 14.0mm x 18.00mm x 1.4mm (Package Code: DN)
Seating plane
A
169X Ø0.3
Dimensions apply
to solder balls postreflow on Ø0.30 SMD
ball pads.
0.08 A
Ball A1 ID
(covered by SR)
Ball A1 ID
14 12 10 8 6 4 2
13 11 9 7 5 3 1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
Y
AA
AB
AC
AD
AE
AF
AG
AH
13.5 CTR
6.5 CTR
18 ±0.1
0.5 TYP
1.3 ±0.1
0.5 TYP
6.5 CTR
0.16 MIN
14 ±0.1
Note:
1. Dimensions are in millimeters.
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Architecture
Architecture
Figure 9: e·MMC Functional Block Diagram
e·MMC
MMC
controller
RST_n
VDDI
VCCQ
Registers
CMD
CLK
VCC
DAT[7:0]
OCR
CSD
RCA
CID
ECSD
DSR
VSS1
VSSQ1
NAND Flash
Note:
1. VSS and VSSQ are internally connected.
MMC Protocol Independent of NAND Flash Technology
The MMC specification defines the communication protocol between a host and a device. The protocol is independent of the NAND Flash features included in the device.
The device has an intelligent on-board controller that manages the MMC communication protocol.
The controller also handles block management functions such as logical block allocation and wear leveling. These management functions require complex algorithms and
depend entirely on NAND Flash technology (generation or memory cell type).
The device handles these management functions internally, making them invisible to
the host processor.
Defect and Error Management
Micron e·MMC incorporates advanced technology for defect and error management. If
a defective block is identified, the device completely replaces the defective block with
one of the spare blocks. This process is invisible to the host and does not affect data
space allocated for the user.
The device also includes a built-in error correction code (ECC) algorithm to ensure that
data integrity is maintained.
To make the best use of these advanced technologies and ensure proper data loading
and storage over the life of the device, the host must exercise the following precautions:
• Check the status after WRITE, READ, and ERASE operations.
• Avoid power-down during WRITE and ERASE operations.
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CID Register
CID Register
The card identification (CID) register is 128 bits wide. It contains the device identification information used during the card identification phase as required by e·MMC protocol. Each device is created with a unique identification number.
Table 4: CID Register Field Parameters
Name
Field
Width
CID Bits
CID Value
Manufacturer ID
MID
8
[127:120]
FEh
Reserved
–
6
[119:114]
–
Card/BGA
CBX
2
[113:112]
01h
OEM/application ID
OID
8
[111:104]
–
Product name
PNM
48
[103:56]
MMC04G
MMC08G
MMC16G
MMC32G
MMC64G
Product revision
PRV
8
[55:48]
–
Product serial number
PSN
32
[47:16]
–
Manufacturing date
MDT
8
[15:8]
–
CRC7 checksum
CRC
7
[7:1]
–
–
1
0
–
Not used; always 1
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CSD Register
CSD Register
The card-specific data (CSD) register provides information about accessing the device
contents. The CSD register defines the data format, error correction type, maximum data access time, and data transfer speed, as well as whether the DS register can be used.
The programmable part of the register (entries marked with W or E in the following table) can be changed by the PROGRAM_CSD (CMD27) command.
Table 5: CSD Register Field Parameters
Name
Cell
Width Type1
Field
CSD
Bits
CSD
Value
CSD structure
CSD_STRUCTURE
2
R
[127:126]
03h
System specification version
SPEC_VERS
4
R
[125:122]
4h
2
TBD
[121:120]
–
Reserved2
–
Data read access time 1
TAAC
8
R
[119:112]
4Fh
Data read access time 2 in CLK cycles (NSAC × 100)
NSAC
8
R
[111:104]
01h
Maximum bus clock frequency
TRAN_SPEED
8
R
[103:96]
32h
Card command classes
CCC
12
R
[95:84]
0F5h
Maximum read data block length
READ_BL_LEN
4
R
[83:80]
9h
Partial blocks for reads supported
READ_BL_PARTIAL
1
R
79
0h
Write block misalignment
WRITE_BLK_MISALIGN
1
R
78
0h
Read block misalignment
READ_BLK_MISALIGN
77
R
77
0h
DS register implemented
DSR_IMP
1
R
76
1h
2
R
[75:74]
–
Reserved
–
Device size
C_SIZE
12
R
[73:62]
FFFh
Maximum read current at VDD,min
VDD_R_CURR_MIN
3
R
[61:59]
7h
Maximum read current at VDD,max
VDD_R_CURR_MAX
3
R
[58:56]
7h
Maximum write current at VDD,min
VDD_W_CURR_MIN
3
R
[55:53]
7h
Maximum write current at VDD,max
VDD_W_CURR_MAX
3
R
[52:50]
7h
Device size multiplier
C_SIZE_MULT
3
R
[49:47]
7h
Erase group size
ERASE_GRP_SIZE
5
R
[46:42]
1Fh
Erase group size multiplier
ERASE_GRP_MULT
5
R
[41:37]
1Fh
Write protect group size
WP_GRP_SIZE
5
R
[36:32]
07h
MTFC4GMVEA-4M IT
MTFC8GLVEA-4M IT
0Fh
MTFC16GJVEC-4M IT,
MTFC32GJVED-4M IT,
MTFC64GJVDN-4M IT
1Fh
Write protect group enable
WP_GRP_ENABLE
1
R
31
1h
Manufacturer default ECC
DEFAULT_ECC
2
R
[30:29]
0h
Write-speed factor
R2W_FACTOR
3
R
[28:26]
2h
Maximum write data block length
WRITE_BL_LEN
4
R
[25:22]
9h
Partial blocks for writes supported
WRITE_BL_PARTIAL
1
R
21
0h
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4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
CSD Register
Table 5: CSD Register Field Parameters (Continued)
Name
Cell
Width Type1
Field
Reserved
–
CSD
Bits
CSD
Value
4
R
[20:17]
–
Content protection application
CONTENT_PROT_APP
1
R
16
0h
File-format group
FILE_FORMAT_GRP
1
R/W
15
0h
Copy flag (OTP)
COPY
1
R/W
14
0h
Permanent write protection
PERM_WRITE_PROTECT
1
R/W
13
0h
Temporary write protection
TMP_WRITE_PROTECT
1
R/W/E
12
0h
File format
FILE_FORMAT
2
R/W
[11:10]
0h
ECC
ECC
2
R/W/E
[9:8]
0h
CRC
CRC
7
R/W/E
[7:1]
–
1
–
0
1h
Not used; always 1
–
Notes:
1. R = Read-only
R/W = One-time programmable and readable
R/W/E = Multiple writable with value kept after a power cycle, assertion of the RST_n
signal, and any CMD0 reset, and readable
TBD = To be determined
2. Reserved bits should be read as 0.
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ECSD Register
ECSD Register
The 512-byte extended card-specific data (ECSD) register defines device properties and
selected modes. The most significant 320 bytes are the properties segment. This segment defines device capabilities and cannot be modified by the host. The lower 192
bytes are the modes segment. The modes segment defines the configuration in which
the device is working. The host can change the properties of modes segments using the
SWITCH command.
Table 6: ECSD Register Field Parameters
Name
Field
Size
(Bytes)
Cell
Type1
ECSD
Bytes
ECSD
Value
–
7
–
[511:505]
–
1
R
504
1h
Properties Segment
Reserved2
Supported command sets
S_CMD_SET
HPI features
HPI_FEATURES
1
R
503
3h
Background operations support
BKOPS_SUPPORT
1
R
502
1h
255
–
[501:247]
–
Reserved
–
Background operations status
BKOPS_STATUS
1
R
246
0h
Number of correctly programmed sectors
CORRECTLY_PRG_
SECTORS_NUM
4
R
[245:242]
–
1
R
241
78h
First initialization time after par- INI_TIMEOUT_PA
titioning
(first CMD1 to device ready)
Reserved
MTFC4GMVEA-4M IT
MTFC8GLVEA-4M IT
F4h
MTFC16GJVEC-4M IT
F6h
MTFC32GJVED-4M IT,
MTFC64GJVDN-4M IT
FFh
–
1
–
240
–
Power class for 52 MHz, DDR at
3.6V3
PWR_CL_DDR_52_360
1
R
239
0h
Power class for 52 MHz, DDR at
1.95V3
PWR_CL_DDR_52_195
1
R
238
0h
Reserved
2
–
[237:236]
–
Minimum write performance for MIN_PERF_DDR_W_8_52
8-bit at 52 MHz in DDR mode
–
1
R
235
0h
Minimum read performance for
8-bit at 52 MHz in DDR mode
MIN_PERF_DDR_R_8_52
1
R
234
0h
–
1
–
233
–
1
R
232
06h
Reserved
TRIM multiplier
TRIM_MULT
MTFC4GMVEA-4M IT,
MTFC8GLVEA-4M IT
MTFC16GJVEC-4M IT,
MTFC32GJVED-4M IT,
MTFC64GJVDN-4M IT
Secure feature support
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SEC_FEATURE_SUPPORT
0Fh
1
17
R
231
15h
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4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
ECSD Register
Table 6: ECSD Register Field Parameters (Continued)
Name
SECURE ERASE multiplier
Field
SEC_ERASE_MULT
MTFC4GMVEA-4M IT,
MTFC8GLVEA-4M IT
Size
(Bytes)
Cell
Type1
ECSD
Bytes
ECSD
Value
1
R
230
02h
MTFC16GJVEC-4M IT,
MTFC32GJVED-4M IT,
MTFC64GJVDN-4M IT
SECURE TRIM multiplier
SEC_TRIM_MULT
MTFC4GMVEA-4M IT,
MTFC8GLVEA-4M IT
06h
1
R
229
MTFC16GJVEC-4M IT,
MTFC32GJVED-4M IT,
MTFC64GJVDN-4M IT
Boot information
BOOT_INFO
Reserved
–
Boot partition size
BOOT_SIZE_MULT
Access size
ACC_SIZE
MTFC4GMVEA-4M IT,
MTFC8GLVEA-4M IT
09h
1
R
228
7h
1
–
227
–
1
R
226
80h
1
R
225
06h
MTFC16GJVEC-4M IT,
MTFC32GJVED-4M IT,
MTFC64GJVDN-4M IT
High-capacity erase unit size
HC_ERASE_GRP_SIZE
MTFC4GMVEA-4M IT,
MTFC8GLVEA-4M IT
03h
07h
1
R
224
MTFC16GJVEC-4M IT,
MTFC32GJVED-4M IT,
MTFC64GJVDN-4M IT
08h
10h
High-capacity erase timeout
ERASE_TIMEOUT_MULT
1
R
223
01h
Reliable write-sector count
REL_WR_SEC_C
1
R
222
01h
High-capacity write protect
group size
HC_WP_GRP_SIZE
1
R
221
01h
MTFC4GMVEA-4M IT
MTFC8GLVEA-4M IT,
MTFC16GJVEC-4M IT
02h
MTFC32GJVED-4M IT
04h
MTFC64GJVDN-4M IT
08h
Sleep current (VCC)
S_C_VCC
1
R
220
08h
Sleep current (VCCQ)
S_C_VCCQ
1
R
219
08h
1
–
218
–
1
R
217
10h
1
–
216
–
4
R
Reserved
Sleep/awake timeout
–
S_A_TIMEOUT
Reserved
Sector count
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–
SEC_COUNT
MTFC4GMVEA-4M IT
[215:212] 0070C000h
MTFC8GLVEA-4M IT
00E88000h
MTFC16GJVEC-4M IT
01D30000h
MTFC32GJVED-4M IT
03B20000h
MTFC64GJVDN-4M IT
07700000h
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ECSD Register
Table 6: ECSD Register Field Parameters (Continued)
Field
Size
(Bytes)
Cell
Type1
ECSD
Bytes
ECSD
Value
–
1
–
211
–
Minimum write performance for MIN_PERF_W_8_52
8-bit at 52 MHz
1
R
210
08h
Minimum read performance for
8-bit at 52 MHz
1
R
209
08h
Minimum write performance for MIN_PERF_W_8_26_4_52
8-bit at 26 MHz and 4-bit at 52
MHz
1
R
208
08h
Minimum read performance for
8-bit at 26 MHz and 4-bit at 52
MHz
1
R
207
08h
Minimum write performance for MIN_PERF_W_4_26
4-bit at 26 MHz
1
R
206
08h
Minimum read performance for
4-bit at 26 MHz
1
R
205
08h
Name
Reserved
MIN_PERF_R_8_52
MIN_PERF_R_8_26_4_52
MIN_PERF_R_4_26
Reserved
1
–
204
–
Power class for 26 MHz at 3.6V3
PWR_CL_26_360
–
1
R
203
00h
Power class for 52 MHz at 3.6V3
PWR_CL_52_360
1
R
202
00h
Power class for 26 MHz at
1.95V3
PWR_CL_26_195
1
R
201
00h
Power class for 52 MHz at
1.95V3
PWR_CL_52_195
1
R
200
00h
Partition switching timing
PARTITION_SWITCH_TIME
1
R
199
1h
Out-of-interrupt busy timing
OUT_OF_INTERRUPT_TIME
1
R
198
02h
1
–
197
–
1
R
196
07h
1
–
195
–
1
R
194
2h
1
–
193
–
EXT_CSD_REV
1
R
192
5h
CMD_SET
1
R/W/E_
P
191
0h
1
–
190
–
1
R
189
0h
1
–
188
–
1
R/W/E_
P
187
0h
1
–
186
–
1
R/W/E_
P
185
0h
1
–
184
–
Reserved
Card type
–
CARD_TYPE
Reserved
CSD structure version
–
CSD_STRUCTURE
Reserved
Extended CSD revision
–
Modes Segment
Command set
Reserved
Command set revision
–
CMD_SET_REV
Reserved
Power class
–
POWER_CLASS
Reserved
High-speed interface timing
Reserved
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–
HS_TIMING
–
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ECSD Register
Table 6: ECSD Register Field Parameters (Continued)
Name
Bus width mode
Field
BUS_WIDTH
Reserved
Erased memory content
–
ERASED_MEM_CONT
Reserved
–
Size
(Bytes)
Cell
Type1
ECSD
Bytes
ECSD
Value
1
W/E_P
183
0h
1
–
182
–
1
R
181
0h
1
–
180
–
Partition configuration
PARTITION_CONFIG
1
R/W/E,
R/W/E_
P
179
0h
Boot configuration protection
BOOT_CONFIG_PROT
1
R/W,
R/W/C_
P
178
0h
Boot bus width
BOOT_BUS_WIDTH
1
R/W/E
177
0h
1
–
176
–
1
R/W/E_
P
175
00h
1
–
174
–
1
R/W,
R/W/C_
P
173
0h
1
–
172
–
1
R/W,
R/W/
C_P,
R/W/E_
P
171
0h
1
–
170
–
R/W
169
0h
Reserved
–
High-density erase group defini- ERASE_GROUP_DEF
tion
Reserved
–
Boot area write protection regis- BOOT_WP
ter
Reserved
User write protection register
–
USER_WP
Reserved
–
Firmware configuration
FW_CONFIG
1
RPMB size
RPMB_SIZE_MULT
1
R
168
1h
Write reliability setting register3 WR_REL_SET
1
R/W
167
00h4
Write reliability parameter regis- WR_REL_PARAM
ter
1
R
166
05h
1
–
165
–
Manually start background oper- BKOPS_START
ations
1
W/E_P
164
–
Enable background operations
handshake
BKOPS_EN
1
R/W
163
0h
Hardware reset function
RST_n_FUNCTION
1
R/W
162
0h
HPI management
HPI_MGMT
1
R/W/E_
P
161
0h
Partitioning support
PARTITIONING_SUPPORT
1
R
160
3h
Reserved
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–
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ECSD Register
Table 6: ECSD Register Field Parameters (Continued)
Field
Size
(Bytes)
Cell
Type1
ECSD
Bytes
ECSD
Value
MAX_ENH_SIZE_MULT MTFC4GMVEA-4M IT
3
R
[159:157]
0001C3h
Name
Maximum enhanced area size
MTFC8GLVEA-4M IT
0001D1h
MTFC16GJVEC-4M IT
0001D3h
MTFC32GJVED-4M IT
0001D9h
MTFC64GJVDN-4M IT
0001DCh
Partitions attribute
PARTITIONS_ATTRIBUTE
1
R/W
156
0h
Partitioning setting
PARTITION_SETTING_COMPLETED
1
R/W
155
0h
General-purpose partition size
GP_SIZE_MULT
12
R/W
[154:143]
0h
Enhanced user data area size
ENH_SIZE_MULT
3
R/W
[142:140]
0h
4
R/W
[139:136]
0h
1
–
135
–
1
R/W
134
0h
134
–
[133:0]
–
Enhanced user data start address ENH_START_ADDR
Reserved
–
Bad block management mode
SEC_BAD_BLK_MGMNT
Reserved
–
Notes:
1. R = Read-only
R/W = One-time programmable and readable
R/W/E = Multiple writable with the value kept after a power cycle, assertion of the
RST_n signal, and any CMD0 reset, and readable
R/W/C_P = Writable after the value is cleared by a power cycle and assertion of the
RST_n signal (the value not cleared by CMD0 reset) and readable
R/W/E_P = Multiple writable with the value reset after a power cycle, assertion of the
RST_n signal, and any CMD0 reset, and readable
W/E_P = Multiple writable with the value reset after power cycle, assertion of the RST_n
signal, and any CMD0 reset, and not readable
TBD = To be determined
2. Reserved bits should be read as 0.
3. Micron has tested power failure under best application knowledge conditions with positive results. Customers may request a dedicated test for their specific application condition.
4. Set at 00h when shipped for optimized write performance; can be set to 1Fh to enable
protection on previously written data if power failure occurs during a WRITE operation.
This byte is one-time programmable.
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DC Electrical Specifications – Device Power
DC Electrical Specifications – Device Power
The device current consumption for various device configurations is defined in the
power class fields of the ECSD register.
VCC is used for the NAND Flash device and its interface voltage; V CCQ is used for the
controller and the e·MMC interface voltage. A CREG capacitor must be connected to the
VDDI terminal to stabilize regulator output on the system.
Figure 10: Device Power Diagram
VCC
VCCQ
Core regulator
NAND
control signals
CLK
CMD
Core
logic block
NAND Flash
NAND
I/O block
CREG
MMC
I/O block
VDDI
NAND
data bus
DAT[7:0]
MMC controller
Note: Stresses greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only, and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not guaranteed. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Table 7: Absolute Maximum Ratings
Parameters
Symbol
Min
Max
Unit
Voltage input
VIN
–0.6
4.6
V
VCC supply
VCC
–0.6
4.6
V
VCCQ supply
VCCQ
–0.6
4.6
V
Storage temperature
TSTG
–40
85
°C
Note:
1. Voltage on any pin relative to VSS.
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DC Electrical Specifications – Device Power
Table 8: Operating Conditions
Parameters
Supply voltage (controller
and I/O)
Supply voltage (NAND)
Symbol
Min
Typ
Max
Unit
VCCQ
1.65
–
1.95
V
2.70
–
3.6
3.6
V
VCC
2.70
–
Supply power-on for 3.3V
tPRUH
–
–
35
ms
Supply power-on for 1.8V
tPRUL
–
–
25
ms
VDDI capacitance value
CREG1
0.1
–
–
µF
Operating temperature
TA
–40
–
85
ºC
Note:
1. CREG is used to stabilize the internal regulator output to controller core logic voltages.
Micron recommends using the following capacitor values:
CVCC (capacitor for VCC) = 4.3µF.
CVCCQ (capacitor for VCCQ) = 4.3µF
CREG = 1.0µF.
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4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
Revision History
Revision History
Rev. D – 07/12
•
•
•
•
•
Updated MMC-Specific Features
Updated Ordering Information table
Added Part Numbering information
Updated 169-ball LFBGA package dimension drawing (package code DN)
Corrected typographical error in ECSD Register table and updated note 4
Rev. C – 05/12
• Updated CSD Register and ECSD Register
• Corrected Ordering Information
• To Production status
Rev. B – 02/12
• Changed the part numbers and the minimum operating temperature from -25 to -40
degrees C
Rev. A – 01/12
• Initial release
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
www.micron.com/productsupport Customer Comment Line: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.
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