TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/208 Devices 2N1487 Qualified Level 2N1488 2N1489 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 250C (1) Operating & Storage Junction Temperature Range 2N1490 Symbol 2N1487 2N1498 2N1488 2N1490 Unit VCEO VCBO VCEX VEBO IB IC PT 40 60 60 55 100 100 Vdc Vdc Vdc Vdc Adc Adc W 10 3.0 6.0 75 TJ, Tstg -65 to +200 Symbol Max. 2.33 0 C TO-33* (TO-204AA) THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly @ 0.429 W/0C for TC > 250C RθJC Unit C/W 0 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N1487, 2N1489 2N1488, 2N1490 V(BR)CEO 40 55 Vdc 2N1487, 2N1489 2N1488, 2N1490 V(BR)CBO 60 100 Vdc 2N1487, 2N1489 2N1488, 2N1490 V(BR)CEX 60 100 Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Breakdown Voltage IC = 200 µAdc Collector-Emitter Breakdown Voltage IC = 0.5 mAdc, VEB = 1.5 Vdc Collector-Base Cutoff Current VCB = 30 Vdc Emitter-Base Cutoff Current VEB = 10 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 ICBO 25 µAdc IEBO 25 µAdc 120101 Page 1 of 2 2N1487, 2N1488, 2N1489, 2N1490 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit 2N1487, 2N1488 2N1489, 2N1490 hFE 15 25 45 75 2N1487, 2N1488 2N1489, 2N1490 VCE(sat) 3.0 1.0 Vdc 2N1487, 2N1488 2N1489, 2N1490 VBE(on) 3.0 2.0 Vdc ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 1.5 Adc, VCE = 4.0 Vdc Collector-Emitter Saturation Voltage IC = 1.5 Adc, IB = 300 mAdc IC = 1.5 Adc, IB = 100 mAdc Base-Emitter Voltage IC = 1.5 Adc, VCE = 4.0 Vdc DYNAMIC CHARACTERISTICS Small-Signal Short-Circuit Forward Current Transfer Ratio Cutoff Frequency IC = 100 mAdc, VCB = 12 Vdc Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz fhfb 500 kc Cobo 700 pF on + toff 25 µs SWITCHING CHARACTERISTICS Turn-On / Turn-Off Time VCC = 12 Vdc; IB0 = IB2 = 150 mAdc; IB1 = 300 mAdc; RC = 7.8 Ω (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 t 120101 Page 2 of 2