MOTOROLA MTP3N60E Tmos power fet 3.0 amperes 600 volts rds(on) = 2.2 ohm Datasheet

 Order this document
by MTP3N60E/D
SEMICONDUCTOR TECHNICAL DATA
 
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET
3.0 AMPERES
600 VOLTS
RDS(on) = 2.2 OHMS
This advanced high voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated
Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor — Absorbs High Energy in the
Avalanche Mode
• Source–to–Drain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode

D
G
S
CASE 221A–09, Style 5
TO-220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
600
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
600
Vdc
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–repetitive
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Pulsed
ID
ID
IDM
3.0
2.4
14
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
75
0.6
Watts
W/°C
TJ, Tstg
– 55 to 150
°C
WDSR(1)
mJ
WDSR(2)
290
46
7.5
RθJC
RθJA
1.67
62.5
°C/W
TL
260
°C
Operating and Storage Temperature Range
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse Drain–to–Source Avalanche Energy — TJ = 25°C
Single Pulse Drain–to–Source Avalanche Energy — TJ = 100°C
Repetitive Pulse Drain–to–Source Avalanche Energy
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case°
Thermal Resistance — Junction to Ambient°
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
(1) VDD = 50 V, ID = 3.0 A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
TMOS
 Motorola
Motorola, Inc.
1997
Power MOSFET Transistor Device Data
1
MTP3N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
600
—
—
Vdc
—
—
—
—
10
100
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VDS = 600 V, VGS = 0)
(VDS = 480 V, VGS = 0, TJ = 125°C)
µAdc
IDSS
Gate–Body Leakage Current — Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
—
—
100
nAdc
Gate–Body Leakage Current — Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
—
—
100
nAdc
2.0
1.5
—
—
4.0
3.5
—
2.1
2.2
—
—
—
—
9.0
7.5
gFS
1.5
—
—
mhos
Ciss
—
770
—
pF
Coss
—
105
—
Crss
—
19
—
td(on)
—
23
—
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
(TJ = 125°C)
VGS(th)
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 A)
RDS(on)
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 3.0 A)
(ID = 1.5 A, TJ = 100°C)
VDS(on)
Forward Transconductance (VDS = 15 Vdc, ID = 1.5 A)
Vdc
Ohms
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 V,
V VGS = 0,
0
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS*
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 300 V,
V ID ≈ 3.0
3 0 A,
A
RL = 100 Ω,
Ω RG = 12 Ω
Ω,
VGS(on) = 10 V))
Fall Time
Total Gate Charge
Gate–Source Charge
(VDS = 420 V,
V ID = 3
3.0
0A
A,
VGS = 10 V)
Gate–Drain Charge
ns
tr
—
34
—
td(off)
—
58
—
tf
—
35
—
Qg
—
28
31
Qgs
—
5.0
—
Qgd
—
17
—
VSD
—
—
1.4
Vdc
ton
—
**
—
ns
trr
—
400
—
—
—
3.5
4.5
—
—
—
7.5
—
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
Forward Turn–On Time
(IS = 3
3.0
0A
A, di/d
di/dt = 100 A/
A/µs))
Reverse Recovery Time
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Ld
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
Ls
nH
* Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
** Limited by circuit inductance.
2
Motorola TMOS Power MOSFET Transistor Device Data
MTP3N60E
I D, DRAIN CURRENT (AMPS)
8
VGS = 10 V
7V
6
4
6V
2
5V
0
0
2
6
10
14
8
12
16
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
18
4
20
VGS(th), GATE THRESHOLD VOLTAGE (NORMALIZED
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
1
0.9
0.8
0.7
–50
I D, DRAIN CURRENT (AMPS)
10
VDS ≥ 10 V
6
4
100°C
2
0
TJ = 25°C
0
1
–55°C
2
4
6
3
5
7
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
8
9
RDS(on) , DRAIN–TO–SOURCE ON–RESISTANCE
(NORMALIZED)
RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS)
100°C
TJ = 25°C
2
–55°C
0
4
6
8
150
1.1
VGS = 0
ID = 250 µA
1
0.9
0.8
–50
–25
0
25
50
75
100
125
150
Figure 4. Breakdown Voltage Variation
With Temperature
4
2
125
TJ, JUNCTION TEMPERATURE (°C)
6
0
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (°C)
1.2
Figure 3. Transfer Characteristics
VGS = 10 V
–25
Figure 2. Gate–Threshold Voltage Variation
With Temperature
VBR(DSS), DRAIN–TO–SOURCE BREAKDOWN VOLTAGE
(NORMALIZED)
Figure 1. On–Region Characteristics
8
VDS = VGS
ID = 0.25 mA
1.1
10
3
VGS = 10 V
ID = 2 A
2
1
0
–50
–25
0
25
50
75
100
125
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance versus Drain Current
Figure 6. On–Resistance Variation
With Temperature
Motorola TMOS Power MOSFET Transistor Device Data
150
3
MTP3N60E
SAFE OPERATING AREA INFORMATION
16
VGS = 20 V
SINGLE PULSE
TC = 25°C
I D, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
100
10 µs
10
100 µs
10 ms
1 ms
dc
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
8
TJ ≤ 150°C
4
0
10
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
12
0
1000
800
200
400
600
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Maximum Rated Forward Biased
Safe Operating Area
Figure 8. Maximum Rated Switching
Safe Operating Area
FORWARD BIASED SAFE OPERATING AREA
The power averaged over a complete switching cycle must
be less than:
The FBSOA curves define the maximum drain–to–source
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned on.
Because these curves include the limitations of simultaneous
high voltage and high current, up to the rating of the device,
they are especially useful to designers of linear systems. The
curves are based on a case temperature of 25°C and a maximum junction temperature of 150°C. Limitations for repetitive
pulses at various case temperatures can be determined by
using the thermal response curves. Motorola Application
Note, AN569, “Transient Thermal Resistance–General Data
and Its Use” provides detailed instructions.
TJ(max) – TC
RθJC
10000
VDD = 300 V
ID = 3 A
VGS(on) = 10 V
TJ = 25°C
t, TIME (ns)
1000
td(off)
tf
td(on)
100
SWITCHING SAFE OPERATING AREA
tr
The switching safe operating area (SOA) of Figure 8 is the
boundary that the load line may traverse without incurring
damage to the MOSFET. The fundamental limits are the
peak current, IDM and the breakdown voltage, V(BR)DSS. The
switching SOA shown in Figure 8 is applicable for both turn–
on and turn–off of the devices for switching times less than
one microsecond.
10
1
1000
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
0.3
D = 0.5
0.2
0.2
0.1
0.1
0.05
P(pk)
0.05
0.02
t1
0.03
t2
DUTY CYCLE, D = t1/t2
0.01
0.02
SINGLE PULSE
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
RθJC(t) = r(t) RθJC
RθJC = 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
50
100
200
500
1k
t, TIME (ms)
Figure 10. Thermal Response
4
Motorola TMOS Power MOSFET Transistor Device Data
MTP3N60E
COMMUTATING SAFE OPERATING AREA (CSOA)
The Commutating Safe Operating Area (CSOA) of Figure
12 defines the limits of safe operation for commutated
source-drain current versus re-applied drain voltage when
the source-drain diode has undergone forward bias. The
curve shows the limitations of IFM and peak VR for a given
commutation speed. It is applicable when waveforms similar
to those of Figure 11 are present. Full or half-bridge PWM DC
motor controllers are common applications requiring CSOA
data.
The time interval tfrr is the speed of the commutation cycle.
Device stresses increase with commutation speed, so tfrr is
specified with a minimum value. Faster commutation speeds
require an appropriate derating of IFM, peak VR or both. Ultimately, tfrr is limited primarily by device, package, and circuit
impedances. Maximum device stress occurs during trr as the
diode goes from conduction to reverse blocking.
VDS(pk) is the peak drain–to–source voltage that the device
must sustain during commutation; IFM is the maximum forward source-drain diode current just prior to the onset of
commutation.
VR is specified at 80% of V(BR)DSS to ensure that the
CSOA stress is maximized as IS decays from IRM to zero.
RGS should be minimized during commutation. TJ has only
a second order effect on CSOA.
Stray inductances, Li in Motorola’s test circuit are assumed
to be practical minimums.
15 V
VGS
0
IFM
dlS/dt
90%
IS
10%
trr
ton
IRM
0.25 IRM
tfrr
VDS(pk)
VR
VDS
VdsL
Vf
MAX. CSOA
STRESS AREA
Figure 11. Commutating Waveforms
RGS
DUT
–
VR
4
I D, DRAIN CURRENT (AMPS)
+
IFM
IS
Li
VDS
+
3
20 V
–
VGS
2
VR = 80% OF RATED VDS
VdsL = Vf + Li ⋅ dls/dt
di/dt ≤ 60 A/µs
1
0
Figure 13. Commutating Safe Operating Area
Test Circuit
600
200
400
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0
800
V(BR)DSS
Vds(t)
Figure 12. Commutating Safe Operating Area (CSOA)
IO
L
VDS
ID
ID(t)
C
4700 µF
250 V
VDD
t
RGS
50 Ω
Figure 14. Unclamped Inductive Switching
Test Circuit
Motorola TMOS Power MOSFET Transistor Device Data
VDD
WDSR
ǒ Ǔǒ
Ǔ
t, (TIME)
tP
+
1 LI 2
O
2
V(BR)DSS
V(BR)DSS – VDD
Figure 15. Unclamped Inductive Switching
Waveforms
5
MTP3N60E
TJ = 25°C
1400
VGS = 0 V
1200
C, CAPACITANCE (pF)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
1600
1000
Ciss
Crss
800
600
400
200
0
10
VDS = 0 V
5
Coss
0
10
5
20
15
25
16
VDS = 100 V
TJ = 25°C
ID = 3 A
250 V
12
420 V
8
4
0
0
10
20
30
15
25
Qg, TOTAL GATE CHARGE (nC)
5
VGS
VDS
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 16. Capacitance Variation
40
Figure 17. Gate Charge versus
Gate–To–Source Voltage
+18 V
VDD
1 mA
Vin
35
10 V
15 V
SAME
DEVICE TYPE
AS DUT
100 k
2N3904
0.1 µF
2N3904
100 k
47 k
100
FERRITE
BEAD
DUT
Vin = 15 Vpk; PULSE WIDTH ≤ 100 µs, DUTY CYCLE ≤ 10%
Figure 18. Gate Charge Test Circuit
6
Motorola TMOS Power MOSFET Transistor Device Data
MTP3N60E
PACKAGE DIMENSIONS
–T–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
C
T
S
4
A
Q
1 2 3
STYLE 5:
PIN 1.
2.
3.
4.
U
H
K
Z
L
R
V
J
G
D
N
GATE
DRAIN
SOURCE
DRAIN
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
CASE 221A–09
ISSUE Z
Motorola TMOS Power MOSFET Transistor Device Data
7
MTP3N60E
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447
JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,
Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488
Customer Focus Center: 1–800–521–6274
Mfax: [email protected] – TOUCHTONE 1–602–244–6609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
Motorola Fax Back System
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
– http://sps.motorola.com/mfax/
HOME PAGE: http://motorola.com/sps/
8
◊
MTP3N60E/D
Motorola TMOS Power MOSFET Transistor Device
Data