Naina Semiconductor Ltd. MUR30005CT thru MUR30020CTR Super Fast Recovery Diode, 300A Features • • • • • Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Symbol Conditions MUR30005CT(R) MUR30010CT(R) VRRM 50 100 200 V VRMS 35 70 140 V 50 100 200 V VDC Average forward current Non-repetitive forward surge current, half sine-wave MUR30020CT(R) Units o IF(AV) TC ≤ 140 C 300 300 300 A IFSM TC = 25 oC 1500 1500 1500 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter Symbol DC forward voltage VF DC reverse current IR Maximum Reverse Recovery Time trr Conditions IF = 50 A TJ = 25 oC VR = 50 V TJ = 25 oC VR = 50 V TJ = 125oC IF = 0.5A IR = 1.0A IRR = 0.25A MUR30005CT(R) MUR30010CT(R) MUR30020CT(R) Units 1.3 1.3 1.3 V 25 25 25 µA 1 1 1 mA 90 90 90 nS Units Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range 1 Symbol MUR30005CT(R) MUR30010CT(R) MUR30020CT(R) RthJ-C 1.0 1.0 1.0 TJ , Tstg - 40 to +175 - 40 to +175 - 40 to +175 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com o C/W o C Naina Semiconductor Ltd. MUR30005CT thru MUR30020CTR Package Outline ALL DIMENSIONS IN MM Ordering Table MUR 1 300 2 05 3 CT 4 1 – Device Type > MUR = Dual Diode Recovery Module 2 – Current Rating = IF(AV) 3 – Voltage = code x 10 = VRRM 4 – Polarity > CT = Normal (Cathode to Base) > CTR = Reverse (Anode to Base) 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com