MUR6080PT, MUR60100PT Ultra Fast Recovery Diodes A C A Dimensions TO-247AD A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode MUR6080PT MUR60100PT VRSM V 800 1000 Symbol IFRMS IFAVM IFRM IFSM Test Conditions A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 70 60 375 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 200 210 185 195 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 200 180 170 160 A2s TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot TC=25oC Md Mounting torque P1 Inches Min. Max. Unit TVJ=150oC Weight Millimeter Min. Max. Maximum Ratings TVJ=45oC I2t VRRM V 800 1000 Dim. o C 138 W 0.8...1.2 Nm 6 g typical ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com MUR6080PT, MUR60100PT Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 750 250 7 uA uA mA VF IF=36A; TVJ=150oC TVJ=25oC 2 2.4 V VTO For power-loss calculations only 1.5 V TVJ=TVJM 12.5 rT RthJC RthCK RthJA 0.9 35 o _ VR=540V; IF=30A; -diF/dt=240A/us; L<0.05uH; TVJ=100 C IRM K/W 0.25 IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC trr m 35 50 ns 16 18 A FEATURES APPLICATIONS ADVANTAGES * International standard package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * RoHS compliant * Rectifiers in switch mode power supplies (SMPS) * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling P2 ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com MUR6080PT, MUR60100PT Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Fig. 7 Transient thermal impedance junction to case. P3 ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com