Diotech MURF3010PT Super fast recovery silicon rectifier Datasheet

MURF3005PT THRU MURF3060PT
SUPER FAST RECOVERY SILICON RECTIFIER
Reverse Voltage - 50 to 600 Volts
Forward Current - 30.0 Ampere
FEATURES
TO-3P
15.8± 0.2
5.0± 0.15
8.0± 0.2
21± 0.5
Super-Fast Switching
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
4.9± 0.25
6.5± 0.3
Glass Passivated Die Construction
2.0± 0.15
3.6± 0.15
PIN
1
MECHANICAL DATA
2
3
2.4± 0.2
20.4± 0.4
Case: TO-3P, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: See Diagram
Weight: 5.6 grams (approx.)
Mounting Position: Any
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
2.2± 0.15
3.0± 0.1
1.2± 0.15
0.6± 0.1
5.4± 0.15
Dimensions in millimeters
+
PIN 1 PIN 3 -
Case, PIN 2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
MURF
MURF
3005PT 3010PT
MURF
3015PT
MURF
3020PT
MURF
3030PT
MURF
MURF
3040PT 3060PT Unit
VRRM
VRWM
VR
50
100
150
200
300
400
600
V
VR(RMS)
35
70
105
140
210
280
420
V
Average Rectified Output Current
@TC = 100°C
IO
30
A
Non-Repetitive Peak Forward Surge
Current 8.3ms Single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
300
A
Forward Voltage
V FM
@IF = 15.0A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
0.975
1.3
1.7
10
500
IRM
V
µA
Reverse Recovery Time (Note 1)
trr
35
50
nS
Typical Junction Capacitance (Note 2)
Cj
150
120
pF
Operating and Storage Temperature Range
Tj, TSTG
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
-65 to +150
°C
MURF3005PT THRU MURF3060PT
RATINGS AND CHARACTERISTIC CURVES
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
30
24
18
12
6
0
0
50
100
3005 - 3020
3040 - 3060
1.0
Pulse width = 300µ s
2% duty cycle
0.1
0
150
TC, CASE TEMPERATURE ( °C)
Fig. 1 Forward Current Derating Curve
50.
01.
51.
V F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
300
400
Tj = 25° C
f = 1.0MHz
8.3 ms single half-sine-wave
JEDEC method
Cj, CAPACITANCE (pF)
IFSM , PEAK FORWARD SURGE CURRENT (A)
3030 - 3040
10
200
100
3005PT 3040PT
100
3060PT
10
0
1
100
10
0.1
1.0
10
V R, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Surge Current
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
(-)
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M Ω, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
100
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