MURT40005 thru MURT40020R
Silicon Super Fast
Recovery Diode
VRRM = 50 V - 200 V
IF(AV) = 400 A
Features
• High Surge Capability
• Types from 50 V to 200 V VRRM
Three Tower Package
• Isolation Type Package
• Electrically Isolated base plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
MURT40005(R)
MURT40010(R)
MURT40020(R)
Unit
VRRM
50
100
200
V
RMS reverse voltage
VRMS
35
71
141
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
50
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
200
-55 to 150
-55 to 150
V
°C
°C
Parameter
Symbol
Repetitive peak reverse voltage
Conditions
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
MURT40005(R)
MURT40010(R)
MURT40020(R)
Unit
IF(AV)
TC = 125 °C
400
400
400
A
IFSM
tp = 8.3 ms, half sine
3300
3300
3300
A
Maximum instantaneous
forward voltage (per leg)
VF
IFM = 200 A, Tj = 25 °C
1.0
1.0
1.0
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
IR
Tj = 25 °C
25
25
25
μA
Tj = 125 °C
3
3
3
mA
Maximum reverse recovery
time (per leg)
Trr
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
150
150
150
nS
0.35
0.35
0.35
°C/W
Parameter
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Thermal characteristics
Thermal resistance, junction case (per leg)
RΘJC
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MURT40005 thru MURT40020R
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MURT40005 thru MURT40020R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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