Microsemi MXP3002 Gaas pin photodiode chip Datasheet

MXP3000 Series
GaAs PIN Photodiode Chips
OPTO ELECTRONIC PRODUCTS
P RODUCT P REVIEW
DESCRIPTION
The five devices offered feature
excellent dark current ratings of 1-3
nA, and a breakdown voltage of 20
Volts with the bandwidth options for
1.4 GHz (active area of 250 mm2),
1.75 GHz(active area of 200 mm2), 5
GHz (active area of 100 mm2), 7 GHz
(active area of 60 mm2), and 8.75
GHz (active area of 30 mm2),
The MXP3000 series of
photodiodes are originally offered in
die form for manufacturers of
photodiode modules, supervisory
pump laser circuits, and combination
PIN Photodiode-transimpedance
amplifier hybrids.
!"Low Dark Current
!"Extremely low capacitance
!"Wide bandwidth
!"Fast response time
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
!"850nm Fiber Optic
Applications
W W W . Microsemi .COM
Microsemi’s GaAs PIN
Photodiode chips are ideal for wide
bandwidth 850nm optical
networking applications.
KEY FEATURES
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Part Ratings and Characteristics
MXP3002
MXP3003
MXP3004
Item
Sym
MXP3001
MXP3005
Unit
Test Condition
Active Area(Dia.)
Photo Sensitive Area
Detection Range
Responsivity
Dark Current
Capacitance
Rise/Fall Time
Bandwidth
Breakdown Voltage
Chip Size
Bonding Pad Size
—
30
0.0007
60
0.0028
100
0.0078
200
0.0314
250
0.0491
—
—
R
Idark
C
tr/tf
850
0.45
1
0.3
40
850
0.45
1
0.4
50
850
0.45
1
0.6
70
850
0.45
2
1.5
200
850
0.45
3
2
250
mm2
mm2
Nm
A/W
nA
pF
ps
8.75
20
350 x 350
40 x 100
7
20
350 x 350
40 x 100
5
20
350 x 350
100
1.75
20
500 x 500
100
1.4
20
500 x 500
100
VB
GHz
—
VR=-5V, l = 850nm
VR=-5V
VR=-5V
VR=-5V, @ 850nm
VR=-5V, @ 850nm
IR=10uA
um x um
um x um
MXP3000 SERIES
Copyright  2000
MSC1592.PDF 2000-10-16
Microsemi
Opto Electronics Products Group
2830 S. Fairview Street, Santa Ana, CA 92704, (714) 979-8220 Fax (714)966-5256
http://www.microsemi.com/opto
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