Nell N-80APU12 Fred ultrafast soft recovery diode, 80 a Datasheet

RoHS
RoHS
N-80EPU12 Series
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 80 A
FEATURES
N-80APU12
N-80EPU12
Ultrafast recovery
175 °C operating junction temperature
Designed and qualified for industrial level
-
BENEFITS
Cathode
to base
Reduced RFI and EMI
Cathode
to base
2
Higher frequency operation
2
Reduced snubbing
Reduced parts count
1
Cathode
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI
in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
3
Anode
3
Anode
1
Anode
TO-247AC modified
TO-247AB
PRODUCT SUMMARY
trr
35 ns
IF(AV)
80 A
VR
1200 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Continuous forward current
lF(AV)
Single pulse forward current
Maximum repetitive forward current
ELECTRICAL SPECIFICATIONS
Breakdown voltage,
blocking voltage
Forward voltage
VF
Reverse leakage current
lR
Junction capacitance
CT
UNITS
1200
V
80
lFSM
TC = 25 °C
610
lFRM
Square wave, 20 kHz
129
A
- 55 to 175
°C
(TJ = 25 ºC unless otherwise specified)
SYMBOL
V BR,
Vr
VALUES
TC = 110 °C
T j , T Stg
Operating junction and storage temperatures
PARAMETER
TEST CONDITIONS
VR
Cathode to anode voltage
TEST CONDITIONS
MIN.
TYP.
MAX.
1200
-
-
l F = 80A
-
2.8
3.3
l F = 160A
-
3.3
-
l F = 80A, T J = 125°C
-
2.1
-
l R = 100µA
V R = V R rated
-
-
100
T J = 150°C, V R = V R rated
-
-
500
V R = 200V
-
50
-
Page 1 of 6
UNITS
V
µA
pF
N-80EPU12 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
DYNAMIC RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
SYMBOL
trr
(TJ = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
TYP.
MAX.
I F = 0.5A, I R = 1A, I RR =0.25A
-
35
40
I F = 1A, dI F /dt = 100 A/µs, V R =30V
-
30
-
T J = 25°C
-
330
-
-
430
-
T J = 125°C
Peak recovery current
lRRM
Reverse recovery charge
Qrr
IF = 80 A
dIF/dt = 200 A/µs
VR = 800 V
UNITS
ns
-
5
-
-
13
-
T J = 25°C
-
740
-
T J = 125°C
-
3450
-
MIN.
TYP.
MAX.
-
-
0.3
-
0.39
-
-
5.9
-
-
0.22
-
oz.
-
1.2
(10)
N⋅ m
(lbf . in)
T J = 25°C
T J = 125°C
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance,
junction to case
RthJC
Thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
Mounting surface, flat, smooth
and greased
Weight
Marking device
°C/W
0.6
(5)
Mounting torque
Case style TO-247AC modified
80EPU12
Case style TO-247AC
80APU12
Page 2 of 6
UNITS
g
N-80EPU12 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
thermal impedance- Z θJC (°C/W)
0.35
0.30
D = 0.9
0.25
0.7
0.20
0.5
Note:
P DM
0.15
0.3
0.10
t2
Duty Factor D = t 1 /t 2
Peak T J = P DM x Z θJC + T C
0.1
0.05
t1
Single pulse
0.05
0
10-5
10-4
10-3
10-2
10-1
1
Rectangular pulse duration (seconds)
Fig3. Reverse recovery time vs. current rate
of change
Fig.2 Forward current vs. forward voltage
500
Reverse recovery time-t rr (ns)
200
Forward current-l F (A)
180
160
T J = 175°C
140
120
T J = 125°C
100
80
60
T J = 25°C
40
T J = -55°C
T J = 125°C
V R = 800V
400
160A
300
200
80A
40A
100
20
0
0
0
1
3
2
0
4
Anode-to-cathode voltage-V F (V)
Fig.4 Reverse recovery charge vs. current
rate of change
7000
V R = 800V
6000
80A
5000
4000
600
800
1000
1200
Fig.5 Reverse recovery current vs. current
rate of change
50
160A
T J = 125°C
400
Current rate of change-di F /dt(A/µs)
Reverse recovery current-l RRM (A)
Reverse recovery charge-Q rr (nC)
8000
200
40A
3000
2000
1000
0
T J = 125°C
160A
V R = 800V
80A
40A
40
30
20
10
0
0
200
400
600
800
1000
1200
Current rate of change-di F /dt(A/µs)
Page 3 of 6
0
200
400
600
800
1000
1200
Current rate of change-di F /dt(A/µs)
N-80EPU12 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.7 Maximum average forward current vs.
case temperature
1.2
140
1
120
Duty cycle = 0.5
T J = 175°C
100
0.8
l F(AV) (A)
Dynamic parameters-K f
(Normalized to 1000A/µs )
Fig.6 Dynamic parameters vs. junction temperature
t rr
0.6
l RRM
80
60
0.4
40
Q rr
0.2
20
0
0
0
25
75
50
100
125
150
25
Junction temperature-T J (°C)
75
50
100
125
Case temperature (°C)
Fig.8 Junction capacitance vs. reverse voltage
Junction capacitance-C J (pF)
350
300
250
200
150
100
50
0
1
10
100
200
Reverse voltage-V R (V)
Ordering Information Tabel
Device code
N
150
-
80
E
P
U
2
3
4
5
1
1
-
Nell
2
-
Current rating
3
-
Single Diode
4
-
TO-247AC (Modified)
5
-
Ultrafast Recovery
6
-
Voltage Rating (12 = 1200 V)
12
(80 = 80A)
Page 4 of 6
E = 2 pins
A = 3 pins
175
N-80EPU12 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.9 Reverse recovery parameter test circuit
Fig.10 Reverse recovery waveform and definitions
Page 5 of 6
N-80EPU12 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Outine Table
N-80EPU12
Outine Table
N-80APU12
Page 6 of 6
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