Nell N-HFA16PB60 Fred ultrafast soft recovery diode, 16 a Datasheet

RoHS
N-HFA16PB60 RoHS
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 16 A
FEATURES
Ultrafast and ultrasoft recovery
Very low I RRM and Q rr
Compliant to RoHS
Designed and qualified for industrial level
BENEFITS
TO-247 AC modified
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
common
cathode
2
DESCRIPTION
HFA16PB60 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a
superb combination of characteristics which result in
performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600V and
16 A continuous current, the HFA16PB60 is especially
well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultrafast recovery time,
the FRED product line features extremely low values
of peak recovery current (IRRM) and does not exhibit
any tendency to “snap-off” during the tb portion of
recovery. The FRED features combine to offer
designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the
switching transistor. These FRED advantages can
help to significantly reduce snubbing, component
count and heatsink sizes. The FRED HFA16PB60 is
ideally suited for applications in power supplies and
power conversion systems (such as inverters), motor
drives, and many other similar applications where high
speed, high efficiency is needed.
3
Anode
1
Cathode
PRODUCT SUMMARY
Package
TO-247AC modified (2 pins)
l F(AV)
16A
VR
600 V
V F at l F
1.75 V
trr (typ.)
19 ns
T J max.
150ºC
Diode variation
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
SYMBOL
IF
Single pulse forward current
l FSM
Maximum repetitive forward current
l FRM
Maximum power dissipation
Operating junction and storage temperature range
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TEST CONDITIONS
VR
PD
T J , T Stg
Page 1 of 6
Tc = 100 ºC
VALUES
UNITS
600
V
16
150
A
60
Tc = 25 ºC
74
Tc = 100 ºC
29
- 55 to + 150
W
ºC
RoHS
N-HFA16PB60 RoHS
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
Cathode to anode
breakdown voltage
(TJ = 25 ºC unless otherwise specified)
SYMBOL
VBR
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
-
1.60
1.75
IF = 32 A
-
1.85
2.0
IF = 16 A, TJ = 125 ºC
-
1.45
1.65
V R = V R rated
-
1.0
T J = 125°C, V R = V R rated
-
400
10
1000
50
pF
-
nH
MAX.
UNITS
IR = 100 µA
IF = 16 A
Maximum forward voltage
VFM
Maximum reverse
leakage current
IRM
Junction capacitance
CT
V R = 200V
-
25
Series inductance
LS
Measured lead to lead 5 mm from package body
-
12
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
PARAMETER
SYMBOL
Reverse recovery time
Peak recovery current
Reverse recovery charge
Peak rate of fall of recovery
current during tb
TEST CONDITIONS
MIN.
TYP.
-
22
30
IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C
-
19
-
trr1
TJ = 25 ºC
-
42
60
trr2
TJ = 125 ºC
-
74
120
-
4.0
6.0
-
6.5
10
IRRM1
µA
IF= 16A
dIF/dt = -200 A/µs
VR = 200 V
TJ = 25 ºC
ns
IRRM2
TJ = 125 ºC
Qrr1
TJ = 25 ºC
-
80
180
Qrr2
TJ = 125 ºC
-
220
600
dl(rec)M/dt1
TJ = 25 ºC
-
188
-
TJ = 125 ºC
-
160
-
dl(rec)M/dt2
V
(TJ = 25 ºC unless otherwise specified)
I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT)
trr
UNITS
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
Lead temperature
Junction to case,
single leg conduction
Junction to case,
both legs conducting
SYMBOL
Tlead
TEST CONDITIONS
0.063'' from case (1.6 mm) for 10 s
MIN.
TYP.
–
MAX.
300
-
-
1.7
-
-
40
UNITS
°C
RthJC
K/W
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
–
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.25
-
-
6.0
-
-
0.21
-
oz.
-
12
(10)
kgf . cm
(lbf . in)
Weight
6.0
(5.0)
Mounting torque
Marking device
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Case style TO-247AC (JEDEC)
Page 2 of 6
40
HFA16PA60
g
RoHS
N-HFA16PB60 RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.2 Typical reverse current vs. reverse voltage
10000
100
Reverse current (µA), l R
Instantaneous forward current (A), lF
Fig.1 Maximum forward voltage drop vs.
Instantaneous forward current
10
TJ = 150 °С
TJ = 125 °С
TJ = 25 °С
1
1.0
TJ = 150 °С
1000
TJ = 125 °C
100
10
1
TJ = 25 ºC
0.1
0.01
1.2
1.4
1.6
1.8
2.0
2.2
0
2.4
200
100
Forward voltage drop (V), VFM
300
400
Reverse voltage (V), VR
Fig.3 Typical junction capacitance vs. reverse voltage
Junction capacitance (pF), CT
100
TJ = 25 °С
10
10
100
1000
Reverse voltage (V), VR
Fig.4 Maximum thermal Impedance ZthJC characteristics
Thermal response, ZthJC
10
1
P DM
0.1
Single pulse
(thermal response)
0.01
0.00001
0.0001
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
t2
Notes:
1. Duty factor D = t1/ t 2
2. Peak T = Pdm x ZthJC + Tc
0.01
Rectangular pulse duration (sec), t 1
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500
Page 3 of 6
0.1
1
600
RoHS
N-HFA16PB60 RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.5 Typical reverse recovery time vs. dIF/dt
Fig.6 Typical recovery current vs. dIF/dt
100
25
IF = 32 A
IF = 16 A
IF = 5 A
20
60
15
Irr (A)
t rr (ns)
80
10
40
20
VR = 200 V
TJ = 125 °С
TJ = 25 °С
IF = 32 A
IF = 16 A
IF = 5 A
5
VR = 200 V
TJ = 125 °С
TJ = 25 °С
0
0
100
1000
100
1000
dI F/dt (A/µs)
dI F/dt (A/µs)
Fig.8 Typical dI(rec)M/dt vs. dIF/dt
Fig.7 Typical Stored Charge vs. dIF/dtI
10000
800
dI (rec)M /dt (A/µs)
Qrr(nC)
600
VR = 200 V
TJ = 125 °С
TJ = 25 °С
IF = 32 A
IF = 16 A
IF = 5 A
400
200
0
100
IF = 32 A
IF = 16 A
IF = 5 A
1000
100
100
1000
1000
dIF/dt (A/µs)
dI F/dt (A/µs)
Fig.9 Reverse recovery parameter test circuit
VR = 200 V
0.01Ω
L = 70 µH
D.U.T.
dIF /dt
adjust
D
G
IRFP250
S
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VR = 200 V
TJ = 125 °С
TJ = 25 °С
Page 4 of 6
RoHS
N-HFA16PB60 RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.10 Reverse recovery waveform and definitions
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M /dt (5)
0.75 I
RRM
(1) dIF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
t rrx l RRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
ORDERING INFORMATION TABLE
Device code
-
N
1
16
PB
60
2
3
4
5
-
Nell Semiconductors product
2
-
FRED family
3
-
Current rating (16 =16A)
4
-
PB = TO-247AC modified
5
-
Voltage rating: (60 = 600 V)
1
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HFA
Page 5 of 6
RoHS
N-HFA16PB60 RoHS
SEMICONDUCTOR
Nell High Power Products
Outine Table
N-HFA16PB60
www.nellsemi.com
Page 6 of 6
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