Renesas N0201S-T1-AT Npn silicon epitaxial transistor Datasheet

Data Sheet
N0201S
R07DS0719EJ0100
Rev.1.00
Mar 30, 2012
NPN SILICON EPITAXIAL TRANSISTOR
FEATURES




Complements to N0201R.
VCEO = 30 V
IC(DC) = 1.0 A
Miniature package SOT-23F (2SD999: Package variation of 3pPoMM)
PRODUCT LINEUP
Part Number
N0201S-T1-AT
Packing
Tape 3000p/reel
Package Name
SOT-23F
Package Code
PVSF0003ZA-A
Mass [TYP.]
0.0126g
ABSOLUTE MAXIMUM RATINGS (Ta = 25C)
Parameter
Collector to Base Voltage
Symbol
VCBO
Ratings
30
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse) *1
VCEO
25
VEBO
5.0
IC(DC)
1.0
IC(pulse)
1.5
Total Power Dissipation
PT1
0.2
Total Power Dissipation *2
PT2
1.0
Junction Temperature
Tj
150
Storage Temperature
Tstg
55 to 150
Note *1. PW  10 ms, Duty Cycle  50%
2
*2. FR-4 board size 2500 mm  1.6 mm, t  5 sec
Unit
V
V
V
A
A
W
W
C
C
ELECTRICAL CHARACTERISTICS (Ta = 25C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
Note *1. Pulsed
Symbol
ICBO
IEBO
hFE1*1
hFE2*1
VCE(sat)*1
1
Condition
VCB = 30 V, IE = 0
VEB = 5.0 V, IC = 0
VCE = 1.0 V, IC = 100 mA
VCE = 1.0 V, IC = 1.0 A
IC = 1.0 A, IB = 100 mA
VBE(sat)*
VBE*1
IC = 1.0 A, IB = 100 mA
VCE = 6.0 V, IC = 10 mA
fT
Cob
VCE = 6.0 V, IE = 10 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
MIN.
TYP.
90
50
200
140
0.21
600
1.0
630
100
18
MAX.
100
100
400
Unit
nA
nA
0.4
V
1.2
700
V
mV
MHz
pF
hFE Classification
Marking
hFE1
CM
90 to 180
R07DS0719EJ0100 Rev.1.00
Mar 30, 2012
CL
135 to 270
CK
200 to 400
Page 1 of 5
N0201S
TYPICAL CHARACTERISTICS (Ta = 25C)
DERATING FACTOR FORWARD BIAS
SAFE OPERATING AREA
10
100
IC - Collector Current - (A)
dT - Percentage of Rated Power - %
120
SAFE OPERATING AREA
80
60
40
20
Ta = 25˚C
Single pulse
1 ms
10 ms
1
100 ms
0.1
0.01
1
10
VCE - Collector to Emitter Voltage - (V)
0
0
20
100
40
60
80 100 120 140 160
TA - Ambient Temperature - ˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
4.5 4.0
5.0
3.5
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1
0.04
100
3.0
90
0.03
IC - Collector Current - (A)
IC - Collector Current - (A)
0.8
80
70
60
0.02
50
40
2.5
2.0
0.6
1.5
0.4
1.0
30
0.01
20
0.2
IB = 0.5 mA
IB = 10 μA
0
0
0
2
4
6
8
VCE - Collector to Emitter Voltage - (V)
10
VCE(sat) - Collector Saturation Voltage - (V)
VBE(sat) - Base Saturation Voltage - (V)
125˚C
25˚C
25˚C
100
VCE = 1 V
Pulsed
10
0.001
0.01
0.1
1
IC - Collector Current - (A)
R07DS0719EJ0100 Rev.1.00
Mar 30, 2012
0.4
0.8
1.2
1.6
VCE - Collector to Emitter Voltage - (V)
2
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1000
hFE - DC Current Gain
0
10
10
IC = 10IB
1
VBE(sat)
0.1
VCE(sat)
0.01
0.001
0.001
0.01
0.1
1
IC - Collector Current - (A)
10
Page 2 of 5
N0201S
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
10
1000
fT - Gain Bandwidth Product - (MHz)
IC - Collector Current - (A)
VCE = 6 V
Pulsed
1
TA = 125˚C
0.1
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
25˚C
−25˚C
0.01
0.001
VCE = 6 V
100
10
1
Cob - Output Capacitance - (pF)
100
0.3
0.6
0.9
VBE - Base to Emitter Voltage - (V)
10
100
IC - Collector Current - (mA)
1000
1.2
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
IE = 0
f = 1.0 MHz
10
SWITCHING TIME vs.
COLLECTOR CURRENT
1000
tSW - Switching Time - (ns)
0.0001
0.0
tstg
VCE = 10 V
IC = 10IB1 = −10IB2
PW = 50 μs
100
tf
ton
1
0.1
10
1
10
VCB - Collector to Base Voltage - (V)
R07DS0719EJ0100 Rev.1.00
Mar 30, 2012
100
10
100
1000
IC - Collector Current - (mA)
10000
Page 3 of 5
N0201S
PACKAGE DRAWING (Unit: mm)
3
2
1
1: Emitter
2: Base
3: Collector
R07DS0719EJ0100 Rev.1.00
Mar 30, 2012
Page 4 of 5
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