Renesas N0202R Pnp silicon epitaxial transistor Datasheet

Data Sheet
N0202R
R07DS0720EJ0100
Rev.1.00
Mar 30, 2012
PNP SILICON EPITAXIAL TRANSISTOR
FEATURES




Complements to N0202S.
VCEO = 20 V
IC(DC) = 2.0 A
Miniature package SOT-23F (2SB1114: Package variation of 3pPoMM)
PRODUCT LINEUP
Part Number
N0202R-T1-AT
Packing
Tape 3000p/reel
Package Name
SOT-23F
Package Code
PVSF0003ZA-A
Mass [TYP.]
0.0126g
ABSOLUTE MAXIMUM RATINGS (Ta = 25C)
Parameter
Collector to Base Voltage
Symbol
VCBO
Ratings
20
Unit
V
VCEO
20
VEBO
6.0
IC(DC)
2.0
IC(pulse)
3.0
Total Power Dissipation
PT1
0.2
Total Power Dissipation *2
PT2
1.0
Junction Temperature
Tj
150
Storage Temperature
Tstg
55 to 150
Note *1. PW  10 ms, Duty Cycle  50%
2
*2. FR-4 board size 2500 mm  1.6 mm, t  5 sec
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse) *1
V
V
A
A
W
W
C
C
ELECTRICAL CHARACTERISTICS (Ta = 25C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
Note *1. Pulsed
Symbol
ICBO
IEBO
hFE1*1
hFE2*1
VCE(sat)*1
Condition
VCB = 16 V, IE = 0
VEB = 6.0 V, IC = 0
VCE = 2.0 V, IC = 100 mA
VCE = 2.0 V, IC = 2.0 A
IC = 1.5 A, IB = 50 mA
VBE(sat)*
VBE*1
IC = 1.5 A, IB = 50 mA
VCE = 6 V, IC = 100 mA
fT
Cob
VCE = 6.0 V, IE = 10 mA
VCB = 10.0 V, IE = 0, f = 1.0 MHz
1
MIN.
TYP.
135
40
650
Unit
nA
nA
350
MAX.
100
100
600
0.3
0.5
V
1.05
680
90
55
1.2
750
V
mV
MHz
pF
hFE Classification
Marking
hFE1
ZM
135 to 270
R07DS0720EJ0100 Rev.1.00
Mar 30, 2012
ZL
200 to 400
ZK
300 to 600
Page 1 of 5
N0202R
TYPICAL CHARACTERISTICS (Ta = 25C)
DERATING FACTOR FORWARD BIAS
SAFE OPERATING AREA
−10
100
IC - Collector Current - (A)
dT - Percentage of Rated Power - %
120
SAFE OPERATING AREA
80
60
40
20
Ta = 25˚C
1 ms Single pulse
10 ms
−1
100 ms
−0.1
−0.01
−1
−10
VCE - Collector to Emitter Voltage - (V)
0
0
20
40
60
80 100 120 140 160
TA - Ambient Temperature - ˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
−0.1
−100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
−1
−4.0
−100
−90
−80
−0.06
−70
−60
−0.04
−50
−40
−30
−0.02
−10
−0.8
IC - Collector Current - (A)
IC - Collector Current - (A)
−0.08
−3.0
−2.0
−0.6
IB = −1.0 mA
−0.4
−0.2
−20
IB = −10 A
0
−2
−4
−6
−8
VCE - Collector to Emitter Voltage - (V)
0
VCE(sat) - Collector Saturation Voltage - (V)
VBE(sat) - Base Saturation Voltage - (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1000
125˚C
hFE - DC Current Gain
0
−10
25˚C
25˚C
VCE = −2 V
Pulsed
100
−0.001
−0.01
−0.1
−1
IC - Collector Current - (A)
R07DS0720EJ0100 Rev.1.00
Mar 30, 2012
−10
−0.4
−0.8
−1.2
−1.6
VCE - Collector to Emitter Voltage - (V)
0
−10
−2
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
IC = 30IB
−1
VBE(sat)
−0.1
VCE(sat)
−0.01
−0.001
−0.01
−0.1
−1
IC - Collector Current - (A)
−10
Page 2 of 5
N0202R
−1
1000
VCE = −6 V
Pulsed
fT - Gain Bandwidth Product - (MHz)
IC - Collector Current - (A)
−10
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TA = 125˚C
25˚C
−0.1
−25˚C
−0.01
−0.001
VCE = −1 V
100
10
−1
Cob - Output Capacitance - (pF)
1000
−0.3
−0.6
−0.9
VBE - Base to Emitter Voltage - (V)
−1.2
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
IE = 0
f = 1.0 MHz
100
10
1
−0.1
−1
−10
−100
VCB - Collector to Base Voltage - (V)
R07DS0720EJ0100 Rev.1.00
Mar 30, 2012
10000
tSW - Switching Time - (ns)
−0.0001
−0.0
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
−10
−100
−1000
IC - Collector Current - (mA)
−10000
SWITCHING TIME vs.
COLLECTOR CURRENT
VCE = −10 V
IC = 30IB1 = −30IB2
PW = 50 μs
ton
1000
tstg
100
tf
10
−10
−100
−1000
IC - Collector Current - (mA)
−10000
Page 3 of 5
N0202R
PACKAGE DRAWING (Unit: mm)
3
2
1
1: Emitter
2: Base
3: Collector
R07DS0720EJ0100 Rev.1.00
Mar 30, 2012
Page 4 of 5
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