RF NBB-502 Cascadable broadband gaas mmic amplifier dc to 4ghz Datasheet

NBB-502
NBB-502Cascadable
Broadband
GaAs MMIC
Amplifier DC to
4GHz
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 4GHz
RoHS Compliant & Pb-Free Product
Package Style: MPGA, Bowtie, 3x3, Ceramic
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
3
Features
„
„
„
„
„
Reliable, Low-Cost HBT
Design
19.0dB Gain, +13.0dBm
P1dB@2GHz
High P1dB of
[email protected]
Single Power Supply Operation
50Ω I/O Matched for High
Freq. Use
Pin 1
Indicator
1
2
3
RF OUT
Ground
8
9
4
Ground
RF IN
7
6
5
Applications
„
„
„
Narrow and Broadband Commercial and Military Radio
Designs
Linear and Saturated Amplifiers
Gain Stage or Driver Amplifiers for MWRadio/Optical
Designs (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
Functional Block Diagram
Product Description
The NBB-502 cascadable broadband InGaP/GaAs MMIC amplifier is a
low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50Ω gain block is based on a reliable HBT
proprietary MMIC design, providing unsurpassed performance for smallsignal applications. Designed with an external bias resistor, the NBB-502
provides flexibility and stability. The NBB-502 is packaged in a low-cost,
surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. It is available in either 1,000 or 3,000
piece-per-reel quantities.
Ordering Information
NBB-502
NBB-502
NBB-502-T1
NBB-502-E
NBB-X-K1
Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz
Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz
Tape & Reel, 1000 Pieces
Fully Assembled Evaluation Board
Extended Frequency InGaP Amp Designer’s Tool Kit
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
9
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A5 DS060124
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
3-13
NBB-502
Absolute Maximum Ratings
Parameter
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
3
Rating
Unit
RF Input Power
+20
dBm
Power Dissipation
300
mW
Device Current
70
mA
Channel Temperature
200
°C
Operating Temperature
-45 to +85
°C
Storage Temperature
-65 to +150
°C
Exceeding any one or a combination of these limits may cause permanent
damage.
Parameter
Min.
Specification
Typ.
Max.
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
Unit
Overall
Small Signal Power Gain, S21
Condition
VD =+3.9V, ICC =35mA, Z0 =50Ω, TA =+25°C
19.0
16.0
Gain Flatness, GF
Input and Output VSWR
20.5
dB
19.0
dB
f=0.1GHz to 1.0GHz
f=1.0GHz to 2.0GHz
17.0
dB
f=2.0GHz to 4.0GHz
±0.8
dB
f=1.0GHz to 3.0GHz
1.55:1
f=0.1GHz to 4.0GHz
1.50:1
f=4.0GHz to 6.0GHz
1.55:1
f=6.0GHz to 10.0GHz
Bandwidth, BW
4.2
GHz
BW3 (3dB)
Output Power @
-1dB Compression, P1dB
13.0
dBm
f=2.0GHz
14.0
dBm
f=6.0GHz
4.0
dB
f=3.0GHz
Third Order Intercept, IP3
+23.0
dBm
f=2.0GHz
Reverse Isolation, S12
-17.0
dB
Noise Figure, NF
Device Voltage, VD
Gain Temperature Coefficient,
δGT/δT
3.6
3.9
4.2
f=0.1GHz to 10.0GHz
V
-0.0015
dB/°C
85
°C
MTTF versus Temperature
@ ICC =35mA
Case Temperature
Junction Temperature
MTTF
109.4
°C
>1,000,000
hours
179
°C/W
Thermal Resistance
θJC
3-14
J T – T CASE
--------------------------- = θ JC ( °C ⁄ Watt )
V D ⋅ I CC
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A5 DS060124
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