May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted NDP708A NDP708AE NDB708A NDB708AE Symbol Parameter NDP708B NDP708BE NDB708B NDB708BE Units VDSS Drain-Source Voltage 80 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) 80 V VGSS Gate-Source Voltage - Continuous ±20 V - Nonrepetitive (tP < 50 µs) ±40 V ID Drain Current - Continuous - Pulsed PD Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds © 1997 Fairchild Semiconductor Corporation 60 54 A 180 162 A 150 W 1 W/°C -65 to 175 °C 275 °C NDP708.SAM Electrical Characteristics (T Symbol Parameter C = 25°C unless otherwise noted) Conditions Type Min Typ Max Units 600 mJ 60 A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) EAS Single Pulse Drain-Source Avalanche Energy VDD = 25 V, ID = 60 A IAR Maximum Drain-Source Avalanche Current NDP708AE NDP708BE NDB708AE NDB708BE OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ALL IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V ALL IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse 80 V 250 µA 1 mA ALL 100 nA VGS = -20 V, VDS = 0 V ALL -100 nA VDS = VGS, ID = 250 µA ALL TJ = 125°C ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance TJ = 125°C VGS = 10 V, ID = 30 A TJ = 125°C NDP708A NDP708AE NDB708A NDB708AE TJ = 125°C NDP708B NDP708BE NDB708B NDB708BE VGS = 10 V, ID = 27 A ID(on) gFS On-State Drain Current Forward Transconductance VGS = 10 V, VDS = 10 V 2 2.6 4 V 1.4 1.9 3.6 V 0.016 0.022 Ω 0.025 0.04 Ω 0.25 Ω 0.044 Ω NDP708A NDP708AE NDB708A NDB708AE 60 A NDP708B NDP708BE NDB708B NDB708BE 54 A VDS = 10 V, ID = 30 A ALL 16 VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL 2800 3600 pF ALL 780 1000 pF ALL 285 400 pF 33 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance NDP708.SAM Electrical Characteristics (T Symbol Parameter C = 25°C unless otherwise noted) Conditions Type Min Typ Max Units SWITCHING CHARACTERISTICS (Note 2) tD(ON) Turn - On Delay Time tr Turn - On Rise Time tD(OFF) VDD = 40 V, ID = 60 A, VGS = 10 V, RGEN = 5 Ω ALL 15 25 nS ALL 143 230 nS Turn - Off Delay Time ALL 58 90 nS tf Turn - Off Fall Time ALL 108 180 nS Qg Total Gate Charge ALL 94 130 nC Qgs Gate-Source Charge ALL 16 nC Qgd Gate-Drain Charge ALL 51 nC VDS = 64 V, ID = 60 A, VGS = 10 V DRAIN-SOURCE DIODE CHARACTERISTICS IS ISM VSD Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 30 A trr Reverse Recovery Time Irr Reverse Recovery Current VGS = 0 V, IS = 60 A, dIS/dt = 100 A/µs (Note 2) NDP708A NDP708AE NDB708A NDB708AE 60 A NDP708B NDP708BE NDB708B NDB708BE 54 A NDP708A NDP708AE NDB708A NDB708AE 180 A NDP708B NDP708BE NDB708B NDB708BE 162 A ALL 0.91 1.3 V 0.82 1.2 V ALL 98 140 ns ALL 6.5 10 A TJ = 125°C THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case ALL 1 °C/W RθJA Thermal Resistance, Junction-to-Ambient ALL 62.5 °C/W Notes: 1. NDP708A/708B and NDB708A/708B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP708.SAM Typical Electrical Characteristics 2 120 10 8.0 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) V GS = 20V 100 7.0 80 6.0 60 40 5.0 20 4.0 0 1 V DS 2 3 , DRAIN-SOURCE VOLTAGE (V) 4 10 1 20 0.8 0 20 40 60 80 I , DRAIN CURRENT (A) 100 120 2 V R DS(on), NORMALIZED V GS = 10V 1.6 1.2 0.8 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8.0 1.2 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. ID = 30A 1.8 GS = 10V TJ = 125°C 1.6 1.4 1.2 25°C 1 0.8 -55°C 0.6 175 0 Figure 3. On-Resistance Variation with Temperature. 20 40 60 I D , DRAIN CURRENT (A) 80 100 Figure 4. On-Resistance Variation with Drain Current and Temperature. 60 25 125 Vth , NORMALIZED 50 40 30 20 10 0 2 3 4 V GS 5 6 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 7 GATE-SOURCE THRESHOLD VOLTAGE (V) 1.2 TJ = -55°C V DS = 10V I D, DRAIN CURRENT (A) 7.0 D 2.4 0.4 -50 6.0 1.4 5 Figure 1. On-Region Characteristics. 2 = 5V GS 1.6 0.6 0 V 1.8 V DS = V GS I D = 250µA 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 T J , JUNCTION TEMPERATURE (°C) 150 175 Figure 6. Gate Threshold Variation with Temperature. NDP708.SAM Typical Electrical Characteristics (continued) 100 I D = 250µA 50 I S , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE (V) 1.15 1.1 1.05 1 0.95 0.9 -50 -25 0 TJ 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 175 10 TJ = 125°C 2 25°C 1 -55°C 0.1 0.01 0.2 Figure 7. Breakdown Voltage Variation with Temperature. 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) 20 C iss VGS , GATE-SOURCE VOLTAGE (V) 2000 C oss 1000 V DS = 12V I D = 60A 3000 500 C rss f = 1 MHz V GS = 0 V 24 64 15 10 5 0 100 1 2 V DS 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50 Figure 9. Capacitance Characteristics. 0 40 t on t d(on) R GEN t d(off) V OUT tf Output, Vout 10% 10% 90% DUT G Input, Vin S 160 90% 90% D 120 t off tr RL VIN 80 Q g , GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. VDD VGS 1.4 Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 5000 CAPACITANCE (pF) V GS = 0V Inverted 50% 50% 10% Pulse Width Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDP708.SAM Typical Electrical Characteristics (continued) T J = -55°C L V GS = 1 0 V + tp 40 V DD 25°C t p is adjusted to reach 125°C 30 the desired peak inductive current, I L . 20 BV DSS tp 10 IL V DD VDS = 10V g FS , TRANSCONDUCTANCE (SIEMENS) 50 0 0 10 20 30 40 ID , DRAIN CURRENT (A) 50 60 Figure 13. Transconductance Variation with Drain Current and Temperature. 300 200 S RD I D, DRAIN CURRENT (A) 100 (O N) L im 10 it 10 1m 10 20 10 0µ Figure 14. Unclamped Inductive Load Circuit and Waveforms. µs s s ms 0m DC s 10 5 V GS = 20V SINGLE PULSE 2 T C = 25°C 1 0.5 1 2 3 5 10 20 30 VDS , DRAIN-SOURCE VOLTAGE (V)) 80 150 Figure 15. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.5 0.3 R θJC (t) = r(t) * RθJC R θJC = 1.0 °C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 t1 0.02 0.03 0.02 Single Pulse 0.01 0.01 0.02 0.05 t2 TJ - T C = P * R θ JC (t) Duty Cycle, D = t 1 /t2 0.01 0.1 0.2 0.5 1 2 5 t 1 ,TIME (ms) 10 20 50 100 200 500 1000 Figure 16. Transient Thermal Response Curve. NDP708.SAM