May 1994 NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 42 and 40A, 100V. RDS(ON) = 0.038 and 0.042Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted NDP710A NDP710AE NDB710A NDB710AE Symbol Parameter NDP710B NDP710BE NDB710B NDB710BE Units VDSS Drain-Source Voltage 100 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) 100 V VGSS Gate-Source Voltage - Continuous ±20 V - Nonrepetitive (tP < 50 µs) ±40 V ID Drain Current - Continuous - Pulsed PD Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds © 1997 Fairchild Semiconductor Corporation 42 40 A 168 160 A 150 W 1 W/°C -65 to 175 °C 275 °C NDP710.SAM Electrical Characteristics (T Symbol Parameter C = 25°C unless otherwise noted) Conditions Type Min Typ Max Units 700 mJ 42 A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) EAS Single Pulse Drain-Source Avalanche Energy VDD = 25 V, ID = 42 A IAR Maximum Drain-Source Avalanche Current NDP710AE NDP710BE NDB710AE NDB710BE OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ALL IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V ALL IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse 100 V 250 µA 1 mA ALL 100 nA VGS = -20 V, VDS = 0 V ALL -100 nA VDS = VGS, ID = 250 µA ALL TJ = 125°C ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 10 V, ID = 21 A VGS = 10 V, ID = 20 A ID(on) gFS On-State Drain Current Forward Transconductance TJ = 125°C 2 2.9 4 V 1.4 2.2 3.6 V 0.026 0.038 Ω 0.044 0.08 Ω 0.042 Ω 0.09 Ω NDP710A NDP710AE NDB710A TJ = 125°C NDB710AE NDP710B NDP710BE NDB710B TJ = 125°C NDB710BE VGS = 10 V, VDS = 10 V NDP710A NDP710AE NDB710A NDB710AE 42 A NDP710B NDP710BE NDB710B NDB710BE 40 A VDS = 10 V, ID = 21 A ALL 20 VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL 2840 3600 pF ALL 550 700 pF ALL 175 200 pF 28 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance NDP710.SAM Electrical Characteristics (T Symbol Parameter C = 25°C unless otherwise noted) Conditions Type Min Typ Max Units SWITCHING CHARACTERISTICS (Note 2) tD(ON) Turn - On Delay Time tr Turn - On Rise Time tD(OFF) VDD = 50 V, ID = 42 A, VGS = 10 V, RGEN = 5 Ω ALL 15 25 nS ALL 111 180 nS Turn - Off Delay Time ALL 55 90 nS tf Turn - Off Fall Time ALL 81 130 nS Qg Total Gate Charge ALL 92 130 nC Qgs Gate-Source Charge ALL 15 nC Qgd Gate-Drain Charge ALL 44 nC VDS = 80 V, ID = 42 A, VGS = 10V DRAIN-SOURCE DIODE CHARACTERISTICS IS ISM VSD Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 21 A trr Reverse Recovery Time Irr Reverse Recovery Current VGS = 0 V, IS = 42 A, dIS/dt = 100 A/µs (Note 2) NDP710A NDP710AE NDB710A NDB710AE 42 A NDP710B NDP710BE NDB710B NDB710BE 40 A NDP710A NDP710AE NDB710A NDB710AE 168 A NDP710B NDP710BE NDB710B NDB710BE 160 A ALL 0.89 1.3 V 0.69 1.2 V ALL 128 180 ns ALL 8.7 13 A TJ = 125°C THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case ALL 1 °C/W RθJA Thermal Resistance, Junction-to-Ambient ALL 62.5 °C/W Notes: 1. NDP710A/710B and NDB710A/710B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP710.SAM Typical Electrical Characteristics V GS = 20V 2.5 12 10 100 V GS = 5V 8.0 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 120 7.0 80 60 6.0 40 5.0 20 0 0 2 4 6 V DS , DRAIN-SOURCE VOLTAGE (V) 10 12 20 1 0 20 40 60 80 I D , DRAIN CURRENT (A) 100 120 2.5 V I D = 15A V GS = 10V R DS(on), NORMALIZED 2 1.5 1 -25 0 = 10V GS 25 50 75 100 125 T J , JUNCTION TEMPERATURE (°C) 150 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8.0 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2.5 TJ = 125°C 2 1.5 25°C 1 -55°C 0.5 175 0 Figure 3. On-Resistance Variation with Temperature. 20 40 60 80 I D , DRAIN CURRENT (A) 100 120 Figure 4. On-Resistance Variation with Drain Current and Temperature. 60 J = -55°C 25 125 Vth , NORMALIZED 50 40 30 20 10 0 2 3 4 V GS 5 6 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 7 GATE-SOURCE THRESHOLD VOLTAGE (V) 1.2 T V DS = 10V I D, DRAIN CURRENT (A) 7.0 1.5 0.5 8 Figure 1. On-Region Characteristics. 0.5 -50 6.0 2 V DS = V 1.1 I D GS = 250µA 1 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 T J , JUNCTION TEMPERATURE (°C) 150 175 Figure 6. Gate Threshold Variation with Temperature. NDP710.SAM Typical Electrical Characteristics (continued) 30 I D = 250µA V GS = 0V 10 I , REVERSE DRAIN CURRENT (A) 1.1 1.05 1 0.95 TJ = 125°C 25°C -55°C 1 0.1 S BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE (V) 1.15 0.9 -50 -25 0 T J 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 175 0.01 0.2 Figure 7. Breakdown Voltage Variation with Temperature. 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 20 6000 V DS = 20V , GATE-SOURCE VOLTAGE (V) I D = 42A C iss 3000 1000 C oss 300 100 0.1 C rss V GS = 0 V 80 10 5 GS f = 1 MHz 0 0.2 0.5 1 2 5 10 20 VDS , DRAIN TO SOURCE VOLTAGE (V) 50 Figure 9. Capacitance Characteristics. 0 40 t on t d(on) R GEN t d(off) V OUT tf Output, Vout 10% 10% 90% DUT G Input, Vin S 160 90% 90% D 120 t off tr RL VIN 80 Q g , GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. VDD VGS 50 15 V CAPACITANCE (pF) 2000 200 1.4 Inverted 50% 50% 10% Pulse Width Figure 36. Switching Test Circuit. Figure 12. Switching Waveforms. NDP710.SAM Typical Electrical Characteristics (continued) 50 , TRANSCONDUCTANCE (SIEMENS) VDS = 10V VGS = 10V 40 T J = -55°C + VDD - t p is adjusted to reach the desired peak inductive current, I L . tp 25°C 30 L tp 125°C 20 10 BV DSS VDD g FS IL 0 0 10 20 30 40 ID , DRAIN CURRENT (A) 50 60 Figure 13. Transconductance Variation with Drain Current and Temperature. 300 D I , DRAIN CURRENT (A) 100 RD S( ) ON Lim 10 it 10 0µ Figure 14. Unclamped Inductive Load Circuit and Waveforms. µs s 50 1m 10 10 10 s ms 0m DC s 5 V GS = 20V SINGLE PULSE 2 T C = 25°C 1 0.5 1 2 3 5 10 20 50 V DS , DRAIN-SOURCE VOLTAGE (V)) 100 150 Figure 15. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.5 0.3 R θJC (t) = r(t) * RθJC R θJC = 1.0 °C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 t1 0.02 0.03 0.02 Single Pulse 0.01 0.01 0.02 0.05 t2 TJ - T C = P * R θ JC (t) Duty Cycle, D = t 1 /t2 0.01 0.1 0.2 0.5 1 2 5 t 1 ,TIME (ms) 10 20 50 100 200 500 1000 Figure 16. Transient Thermal Response Curve. NDP710.SAM