ON NDF06N62Z N-channel power mosfet 620 v, 0.98 , Datasheet

NDF06N62Z, NDP06N62Z
N-Channel Power MOSFET
620 V, 0.98 W,
Features
•
•
•
•
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and RoHS Compliant
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ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
NDF06N62Z
NDP06N62Z
Unit
Drain−to−Source Voltage
VDSS
620
V
Continuous Drain Current
RqJC
ID
6.0 (Note 1)
A
Continuous Drain Current
RqJC, TA = 100°C
ID
3.8 (Note 1)
A
Pulsed Drain Current,
VGS @ 10 V
IDM
20 (Note 1)
A
Power Dissipation RqJC
PD
Gate−to−Source Voltage
VGS
±30
V
Single Pulse Avalanche
Energy, ID = 6.0 A
EAS
113
mJ
ESD (HBM)
(JESD 22−A114)
Vesd
3000
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 14)
VISO
Peak Diode Recovery
dv/dt
4.5 (Note 2)
V/ns
Continuous Source
Current (Body Diode)
IS
6.0
A
Maximum Temperature for
Soldering Leads
TL
260
°C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
VDSS
RDS(ON) (TYP) @ 3 A
620 V
0.98 Ω
N−Channel
D (2)
31
113
4500
G (1)
W
−
S (3)
TO−220FP
CASE 221D
STYLE 1
MARKING
DIAGRAM
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. ISD = 6.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
NDF06N62ZG
or
NDP06N62ZG
AYWW
Gate
TO−220AB
CASE 221A
STYLE 5
A
Y
WW
G
Source
Drain
= Location Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 0
1
Device
Package
Shipping
NDF06N62ZG
TO−220FP
(Pb−Free)
50 Units/Rail
NDP06N62ZG
TO−220AB
(Pb−Free)
50 Units/Rail
In Development
Publication Order Number:
NDF06N62Z/D
NDF06N62Z, NDP06N62Z
THERMAL RESISTANCE
Symbol
NDF06N62Z
NDP06N62Z
Unit
Junction−to−Case (Drain)
Parameter
RqJC
4.0
1.1
°C/W
Junction−to−Ambient Steady State (Note 3)
RqJA
50
50
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
VGS = 0 V, ID = 1 mA
BVDSS
620
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
25°C
VDS = 620 V, VGS = 0 V
Gate−to−Source Forward Leakage
V
0.6
IDSS
V/°C
1
125°C
mA
50
VGS = ±20 V
IGSS
Static Drain−to−Source
On−Resistance
VGS = 10 V, ID = 3.0 A
RDS(on)
Gate Threshold Voltage
VDS = VGS, ID = 100 mA
VGS(th)
VDS = 15 V, ID = 3.0 A
gFS
5.0
S
Ciss
923
pF
Coss
106
Reverse Transfer Capacitance
Crss
23
Total Gate Charge
Qg
32
±10
mA
1.2
W
4.5
V
ON CHARACTERISTICS (Note 4)
Forward Transconductance
0.98
3.0
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Gate−to−Source Charge
nC
Qgs
6.3
Qgd
17
Plateau Voltage
Vgp
6.3
V
Gate Resistance
Rg
3.2
W
td(on)
13
ns
tr
19
td(off)
32
tf
28
VDD = 310 V, ID = 6.0 A,
VGS = 10 V
Gate−to−Drain (“Miller”) Charge
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 310 V, ID = 6.0 A,
VGS = 10 V, RG = 5 Ω
Fall Time
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 6.0 A, VGS = 0 V
VSD
Reverse Recovery Time
VGS = 0 V, VDD = 30 V
IS = 6.0 A, di/dt = 100 A/ms
trr
338
ns
Qrr
2.0
mC
Reverse Recovery Charge
3. Insertion mounted
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
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2
1.6
V
NDF06N62Z, NDP06N62Z
TYPICAL CHARACTERISTICS
12
6.8 V
VDS ≥ 30 V
6.6 V
15 V
8
6.4 V
6
6.2 V
6.0 V
4
5.8 V
2
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
10 V
10
7V
5.6 V
0
5
10
15
20
8
6
25
2
TJ = −55°C
3
4
6
5
7
8
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.5
1
0.5
5
6
7
8
9
10
VGS (V)
1.75
TJ = 25°C
1.5
1.25
VGS = 10 V
1
0.75
0.5
0
2
4
6
8
10
12
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.6
1.15
BVDSS, NORMALIZED BREAKDOWN
VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 25°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 3 A
TJ = 25°C
2.2
TJ = 150°C
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
2
0
10
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TJ = 25°C
ID, DRAIN CURRENT (A)
12
ID = 3 A
VGS = 10 V
1.8
1.4
1.0
0.6
0.2
−50
−25
0
25
50
75
100
125
150
1.1
ID = 1 mA
1.05
1.0
0.95
0.9
−50
TJ, JUNCTION TEMPERATURE (°C)
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. BVDSS Variation with Temperature
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3
150
NDF06N62Z, NDP06N62Z
TYPICAL CHARACTERISTICS
2000
100
VGS = 0 V
TJ = 25°C
10
C, CAPACITANCE (pF)
IDSS, LEAKAGE (mA)
VGS = 0 V
TJ = 150°C
1
TJ = 100°C
0.1
1500
Ciss
1000
Coss
500
Crss
0.01
0
100
200
300
500
400
0
600
0
Figure 7. Drain−to−Source Leakage Current
vs. Voltage
QT
300
VDS
10
200
VGS
5
0
VDS = 310V
TJ = 25°C
ID = 6 A
0
5
15
10
20
25
30
100
0
35
VDD = 310 V
ID = 6 A
VGS = 10 V
td(on)
10
1
1
10
100
Figure 9. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
100
VGS = 0 V
TJ = 25°C
ID, DRAIN CURRENT (A)
IS, SOURCE CURRENT (A)
tr
tf
RG, GATE RESISTANCE (W)
4
3
2
1
0
0.4
td(off)
100
Qg, TOTAL GATE CHARGE (nC)
6
5
200
1000
t, TIME (ns)
VGS, GATE−TO−SOURCE VOLTAGE (V)
400
Qgd
150
Figure 8. Capacitance Variation
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
20
Qgs
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
15
50
0.5
0.6
0.7
0.8
0.9
100 ms
10 ms
dc
1
VGS = 10 V
Single Pulse
TC = 25°C
0.1
0.01
1.0
10 ms 1 ms
10
RDS(on) Limit
Thermal Limit
Package Limit
1
10
100
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Diode Forward Voltage vs. Current
Figure 12. Maximum Rated Forward Biased
Safe Operating Area for NDF06N62Z
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4
1000
NDF06N62Z, NDP06N62Z
TYPICAL CHARACTERISTICS
10
R(t) (C/W)
1.0
0.1
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
0.01
SINGLE PULSE
RqJC = 4.0°C/W
Steady State
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
PULSE TIME (s)
Figure 13. Thermal Impedance for NDF06N62Z
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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5
100
1000
NDF06N62Z, NDP06N62Z
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
−T−
−B−
F
SEATING
PLANE
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
S
Q
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
TO−220AB
CASE 221A−09
ISSUE AE
−T−
B
F
T
SEATING
PLANE
C
S
A
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
4
Q
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
Y
M
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
U
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
N
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
DRAIN
SOURCE
DRAIN
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NDF06N62Z/D
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