NDF11N50Z N-Channel Power MOSFET 500 V, 0.52 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com VDSS RDS(ON) (MAX) @ 4.5 A 500 V 0.52 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol NDF Unit VDSS 500 V Continuous Drain Current, RqJC (Note 1) ID 12 A Continuous Drain Current TA = 100°C, RqJC (Note 1) ID 7.4 A Pulsed Drain Current, tP = 10 ms IDM 44 A Power Dissipation, RqJC PD 39 W Gate−to−Source Voltage VGS ±30 V Single Pulse Avalanche Energy, ID = 10 A EAS 420 mJ ESD (HBM) (JESD22−A114) Vesd 4000 V RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) VISO 4500 V Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns MOSFET dV/dt Rating Drain−to−Source Voltage dV/dt 60 V/ns Continuous Source Current (Body Diode) IS 12 A Maximum Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2. Id ≤ 10.5 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, TJ ≤ 150°C. N−Channel D (2) G (1) S (3) MARKING DIAGRAM NDF11N50ZG NDF11N50ZH TO−220FP CASE 221AH NDF11N50ZG or NDF11N50ZH AYWW Gate Source Drain A Y WW G, H = Location Code = Year = Work Week = Pb−Free, Halogen−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2015 February, 2015 − Rev. 6 1 Publication Order Number: NDF11N50Z/D NDF11N50Z THERMAL RESISTANCE Symbol NDF11N50Z Unit Junction−to−Case (Drain) Parameter RqJC 3.2 °C/W Junction−to−Ambient Steady State (Note 3) RqJA 50 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Test Conditions Symbol Min Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 1 mA BVDSS 500 Breakdown Voltage Temperature Coefficient Reference to 25°C, ID = 1 mA DBVDSS/ DTJ Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Leakage Current 25°C VDS = 500 V, VGS = 0 V 0.6 IDSS V/°C 1 125°C mA 50 VGS = ±20 V IGSS Static Drain−to−Source On−Resistance VGS = 10 V, ID = 4.5 A RDS(on) Gate Threshold Voltage VDS = VGS, ID = 100 mA VGS(th) VDS = 15 V, ID = 4.5 A gFS Gate−to−Source Forward Leakage V ±10 mA 0.48 0.52 W 3.9 4.5 V ON CHARACTERISTICS (Note 4) Forward Transconductance 3.0 7.7 S DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) Output Capacitance (Note 5) VDS = 25 V, VGS = 0 V, f = 1.0 MHz Reverse Transfer Capacitance (Note 5) Total Gate Charge (Note 5) Gate−to−Source Charge (Note 5) VDD = 250 V, ID = 10.5 A, VGS = 10 V Gate−to−Drain (“Miller”) Charge (Note 5) Ciss 1097 1375 1645 Coss 132 166 199 Crss 30 40 50 Qg 23 46 69 Qgs 4.5 8.7 13 Qgd 12.5 25 37.5 pF nC Plateau Voltage VGP 6.2 V Gate Resistance Rg 1.4 W td(on) 15 ns RESISTIVE SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time VDD = 250 V, ID = 10.5 A, VGS = 10 V, RG = 5 Ω Fall Time tr 32 td(off) 40 tf 23 SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted) Diode Forward Voltage IS = 10.5 A, VGS = 0 V VSD Reverse Recovery Time VGS = 0 V, VDD = 30 V IS = 10.5 A, di/dt = 100 A/ms trr 310 ns Qrr 2.5 mC Reverse Recovery Charge 1.6 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Insertion mounted 4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. 5. Guaranteed by design. www.onsemi.com 2 NDF11N50Z TYPICAL CHARACTERISTICS 25 25 VDS = 25 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 10 V 20 7.0 V 15 6.5 V 10 6.0 V 5 20 15 10 TJ = 25°C TJ = 150°C 5 TJ = −55°C 5.5 V 5.0 V 0 5 10 15 20 5 6 7 8 9 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 4.5 A TJ = 25°C 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 1.00 0.95 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0 1 2 3 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Region versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage ID = 4.5 A VGS = 10 V 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) 10 VGS = 10 V TJ = 25°C 0.90 10.0 2.75 0.25 −50 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.95 2.50 3 Figure 1. On−Region Characteristics 1.00 0.40 5.5 0 25 BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 1.15 ID = 1 mA 1.10 1.05 1.00 0.95 0.90 50 Figure 5. On−Resistance Variation with Temperature 25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 6. BVDSS Variation with Temperature www.onsemi.com 3 11 150 NDF11N50Z TYPICAL CHARACTERISTICS 10 C, CAPACITANCE (pF) TJ = 150°C TJ = 125°C 1 0.1 50 100 150 200 250 300 350 400 450 500 TJ = 25°C VGS = 0 V f = 1 MHz Ciss Coss Crss 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Drain−to−Source Leakage Current versus Voltage Figure 8. Capacitance Variation VGS, GATE−TO−SOURCE VOLTAGE (V) 0 3250 3000 2750 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 0.01 300 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 QT 250 VDS 200 VGS QGS 150 QGD 100 VDS = 250 V ID = 10.5 A TJ = 25°C 0 5 10 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) 45 50 0 50 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IDSS, LEAKAGE (mA) 100 Figure 9. Gate−to−Source Voltage and Drain−to−Source Voltage versus Total Charge 1000 t, TIME (ns) IS, SOURCE CURRENT (A) 20 VDD = 250 V ID = 10.5 A VGS = 10 V td(off) tr tf 100 td(on) 10 1 10 TJ = 150°C 1 125°C 25°C −55°C 0.1 1 10 RG, GATE RESISTANCE (W) 100 0.3 Figure 10. Resistive Switching Time Variation versus Gate Resistance 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 11. Diode Forward Voltage versus Current www.onsemi.com 4 1.2 NDF11N50Z TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 100 100 ms 10 ms 1 ms 10 ms VGS v 30 V SINGLE PULSE TC = 25°C 10 dc 1 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 Figure 12. Maximum Rated Forward Biased Safe Operating Area NDF11N50Z 10 DUTY CYCLE = 0.5 R(t) (C/W) 1 0.1 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1E−06 1E−05 RqJC = 3.2°C/W Steady State 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 PULSE TIME (s) Figure 13. Thermal Impedance (Junction−to−Case) for NDF11N50Z LEADS HEATSINK 0.110″ MIN Figure 14. Isolation Test Diagram Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 1E+02 1E+03 NDF11N50Z ORDERING INFORMATION Package Shipping NDF11N50ZG Order Number TO−220FP (Pb−Free, Halogen−Free) 50 Units / Rail NDF11N50ZH TO−220FP (Pb−Free, Halogen−Free) 50 Units / Rail www.onsemi.com 6 NDF11N50Z PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE F A B E A P E/2 0.14 Q D M B A H1 M A1 C NOTE 3 1 2 3 L L1 3X 3X SEATING PLANE c b b2 0.25 M B A M C A2 e SIDE VIEW FRONT VIEW SECTION D−D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1 AND H1 FOR MANUFACTURING PURPOSES. DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.90 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.60 7.10 12.50 14.73 --2.80 3.00 3.40 2.80 3.20 A NOTE 6 NOTE 6 H1 D D A SECTION A−A ALTERNATE CONSTRUCTION ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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