NSC NDF7000A N-channel enhancement mode field effect transistor Datasheet

2N7000/2N7002/NDF7000A/NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These n-channel enhancement mode field effect transistors
are produced using National’s very high cell density third
generation DMOS technology. These products have been
designed to minimize on-state resistance provide rugged
and reliable performance and fast switching. They can be
used, with a minimum of effort, in most applications requiring up to 400 mA DC and can deliver pulsed currents up to
2A. This product is particularly suited to low voltage, low
current applications, such as small servo motor controls,
power MOSFET gate drivers, and other switching applications.
Y
Y
Y
Y
Y
Efficient high density cell design approaching
(3 million/in2)
Voltage controlled small signal switch
Rugged
High saturation current
Low RDS (ON)
TL/G/11378 – 2
TL/G/11378–1
TO-92
7000 Series
TO-236 AB
(SOT-23)
7002 Series
TL/G/11378 – 3
Absolute Maximum Ratings
Symbol
Parameter
2N7000
2N7002
NDF7000A
NDS7002A
Units
VDSS
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage (RGS s 1 MX)
60
V
VGSS
Gate-Source Voltage
g 40
V
ID
Drain CurrentÐContinuous
ÐPulsed
PD
Total Power Dissipation
@
TA e 25§ C
Derating above 25§ C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering
Purposes, (/16* from Case for 10 Seconds
C1995 National Semiconductor Corporation
TL/G/11378
200
115
400
280
mA
500
800
2000
1500
mA
400
200
625
300
mW
3.2
1.6
5
2.4
mW/§ C
b 55 to 150
b 65 to 150
300
§C
§C
RRD-B30M115/Printed in U. S. A.
2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor
March 1993
2N7000
Electrical Characteristics TC e 25§ C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
1
mA
1
mA
b 10
nA
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS e 0V, ID e 10 mA
IDSS
Zero Gate Voltage Drain Current
VDS e 48V, VGS e 0V
IGSSF
Gate-Body Leakage, Forward
VGS e b15V, VDS e 0V
60
V
TC e 125§ C
ON CHARACTERISTICS*
VGS(th)
Gate Threshold Voltage
VDS e VGS, ID e 1 mA
rDS(ON)
Static Drain-Source
On-Resistance
VGS e 10V, ID e 0.5A
Drain-Source On-Voltage
VGS e 10V, ID e 0.5A
VGS e 4.5V, ID e 75 mA
VDS(ON)
0.8
TC e 125§ C
2.1
3
V
1.2
5
X
1.9
9
X
0.6
2.5
V
0.14
0.4
V
ID(ON)
On-State Drain Current
VGS e 4.5V, VDS e 10V
75
600
mA
gFS
Forward Transconductance
VDS e 10V, ID e 200 mA
100
320
ms
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VDS e 25V, VGS e 0V, f e 1.0 MHz
20
60
Coss
Output Capacitance
11
25
pF
pF
Crss
Reverse Transfer Capacitance
4
5
pF
10
ns
10
ns
SWITCHING CHARACTERISTICS*
ton
Turn-On Time
toff
Turn-Off Time
VDD e 15V, ID e 0.5V, VGS e 10V,
RG e 25X, RL e 25X
BODY-DRAIN DIODE RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
200
mA
ISM*
Maximum Pulsed Drain-Source Diode Forward Current
500
mA
VSD*
Drain-Source Diode Forward Voltage
1.5
V
312.5
§ C/W
40
§ C/W
VGS e 0V, IS e 200 mA
THERMAL CHARACTERISTICS
RiJA
Thermal Resistance, Junction to Ambient
RiJC
Thermal Resistance, Junction to Case
*Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%.
2
2N7002
Electrical Characteristics TC e 25§ C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
1
mA
500
mA
100
nA
b 100
nA
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS e 0V, ID e 10 mA
IDSS
Zero Gate Voltage Drain Current
VDS e 60V, VGS e 0V
IGSSF
Gate-Body Leakage, Forward
VGS e 20V
Gate-Body Leakage, Reverse
VGS e b20V
60
V
TC e 125§ C
IGSSR
ON CHARACTERISTICS*
VGS(th)
Gate Threshold Voltage
VDS e VGS, ID e 250 mA
rDS(ON)
Static Drain-Source
On-Resistance
VGS e 10V, ID e 0.5A
1
TC e 125§ C
VGS e 5V, ID e 50 mA
TC e 125§ C
VDS(ON)
Drain-Source On-Voltage
2.1
2.5
V
1.2
7.5
X
2
13.5
X
1.7
7.5
X
2.8
13.5
X
VGS e 10V, ID e 0.5A
0.6
3.75
V
VGS e 5V, ID e 50 mA
0.09
1.5
V
ID(ON)
On-State Drain Current
VGS e 10V, VDS t 2 VDS(ON)
gFS
Forward Transconductance
VDS t 2 VDS(ON), ID e 200 mA
500
2700
mA
80
320
ms
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Crss
VDS e 25V, VGS e 0V, f e 1.0 MHz
20
50
pF
Output Capacitance
11
25
pF
Reverse Transfer Capacitance
4
5
pF
20
ns
20
ns
SWITCHING CHARACTERISTICS*
tON
Turn-On Time
tOFF
Turn-Off Time
VDD e 30V, ID e 200 mA, VGS e 10V,
RGEN e 25X, RL e 150X
BODY-DRAIN DIODE RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
115
mA
ISM
Maximum Pulsed Drain-Source Diode Forward Current
800
mA
VSD*
Drain-Source Diode Forward Voltage
1.5
V
625
§ C/W
VGS e 0V, IS e 115 mA
THERMAL CHARACTERISTICS
RiJA
Thermal Resistance, Junction to Ambient
*Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%.
3
NDF7000A
Electrical Characteristics TC e 25§ C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
1
mA
1
mA
b 10
nA
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS e 0V, ID e 10 mA
IDSS
Zero Gate Voltage Drain Current
VDS e 48V, VGS e 0V
IGSSF
Gate-Body Leakage, Forward
VGS e b15V
60
V
TC e 125§ C
ON CHARACTERISTICS*
VGS(th)
Gate Threshold Voltage
VDS e VGS, ID e 1 mA
rDS(ON)
Static Drain-Source
On-Resistance
VGS e 10V, ID e 0.5A
Drain-Source On-Voltage
VGS e 10V, ID e 500 mA
0.6
1
V
VGS e 4.5V, ID e 75 mA
0.14
0.225
V
VDS(ON)
0.8
TC e 125§ C
2.1
3
V
1.2
2
X
2
3.5
X
ID(ON)
On-State Drain Current
VGS e 4.5V, VDS t 2 VDS(ON)
400
600
mA
gFS
Forward Transconductance
VDS t 2 VDS(ON), ID e 200 mA
100
320
ms
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VDS e 25V, VGS e 0V, f e 1.0 MHz
20
60
Coss
Output Capacitance
11
25
pF
pF
Crss
Reverse Transfer Capacitance
4
5
pF
SWITCHING CHARACTERISTICS*
ton
Turn-On Time
toff
Turn-Off Time
VDD e 15V, ID e 500 mA, VGS e 10V,
RG e 25X, RL e 25X
10
ns
10
ns
400
mA
2000
mA
1.2
V
200
§ C/W
BODY-DRAIN DIODE RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD*
Drain-Source Diode Forward Voltage
VGS e 0V, IS e 400 mA
0.88
THERMAL CHARACTERISTICS
RiJA
Thermal Resistance, Junction to Ambient
*Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%.
4
NDS7002A
Electrical Characteristics TC e 25§ C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
1
mA
500
mA
100
nA
b 100
nA
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS e 0V, ID e 10 mA
IDSS
Zero Gate Voltage Drain Current
VDS e 60V, VGS e 0V
IGSSF
Gate-Body Leakage, Forward
VGS e 20V
Gate-Body Leakage, Reverse
VGS e b20V
60
V
TC e 125§ C
IGSSR
ON CHARACTERISTICS*
VGS(th)
Gate Threshold Voltage
VDS e VGS, ID e 250 mA
rDS(ON)
Static Drain-Source
On-Resistance
VGS e 10V, ID e 0.5A
1
TC e 125§ C
VGS e 5V, ID e 50 mA
TC e 125§ C
VDS(ON)
Drain-Source On-Voltage
2.1
2.5
V
1.2
2
X
X
2
3.5
1.7
3
X
2.8
5
X
VGS e 10V, ID e 500 mA
0.6
1
V
VGS e 5.0V, ID e 50 mA
0.09
0.15
V
ID(ON)
On-State Drain Current
VGS e 10V, VDS t 2 VDS(ON)
500
2700
mA
gFS
Forward Transconductance
VDS t 2 VDS(ON), ID e 200 mA
80
320
ms
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Crss
VDS e 25V, VGS e 0V, f e 1.0 MHz
20
50
pF
Output Capacitance
11
25
pF
Reverse Transfer Capacitance
4
5
pF
20
ns
20
ns
SWITCHING CHARACTERISTICS*
tON
Turn-On Time
tOFF
Turn-Off Time
VDD e 30V, ID e 200 mA, VGS e 10V,
RG e 25X, RL e 150X
BODY-DRAIN DIODE RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
280
mA
ISM
Maximum Pulsed Drain-Source Diode Forward Current
1500
mA
1.2
V
417
§ C/W
VSD*
Drain-Source Diode Forward Voltage
VGS e 0V, IS e 400 mA
0.88
THERMAL CHARACTERISTICS
RiJA
Thermal Resistance, Junction to Ambient
*Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%.
5
Typical Electrical Characteristics
2N7000/2N7002/NDF7000A/NDS7002A
TL/G/11378–4
TL/G/11378 – 5
FIGURE 1. On-Region Characteristics
FIGURE 2. rDS(ON) Variation
with Drain Current and Gate Voltage
TL/G/11378 – 7
TL/G/11378–6
FIGURE 4. Breakdown Voltage
Variation with Temperature
FIGURE 3. Transfer Characteristics
TL/G/11378–8
TL/G/11378 – 9
FIGURE 5. Gate Threshold Variation with Temperature
FIGURE 6. On-Resistance Variation with Temperature
6
Typical Electrical Characteristics (Continued)
2N7000/2N7002/NDF7000A/NDS7002A (Continued)
TL/G/11378 – 10
TL/G/11378 – 11
FIGURE 8. Body Diode Forward Voltage
Variation with Current and Temperature
FIGURE 7. On-Resistance vs Drain Current
TL/G/11378 – 13
TL/G/11378 – 12
FIGURE 10. Gate Charge vs Gate-Source Voltage
FIGURE 9. Capacitance vs Drain-Source Voltage
TL/G/11378 – 14
TL/G/11378 – 15
FIGURE 11. 2N7000 Safe Operating Area
FIGURE 12. 2N7002 Safe Operating Area
7
Typical Electrical Characteristics (Continued)
2N7000/2N7002/NDF7000A/NDS7002A (Continued)
TL/G/11378 – 16
TL/G/11378 – 17
FIGURE 13. NDF7000A Safe Operating Area
FIGURE 14. NDS7002A Safe Operating Area
TL/G/11378 – 18
FIGURE 15. TO-92 Transient Thermal Response
TL/G/11378 – 19
FIGURE 16. SOT-23 Transient Thermal Response
8
Physical Dimensions inches (millimeters)
TL/G/11378 – 20
TO-92
9
2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor
Physical Dimensions inches (millimeters) (Continued)
TL/G/11378 – 21
Note 1: Meets all JEDEC dimensional requirements for TO-236AB.
Note 2: Controlling dimension: millimeters.
Note 3: Available also in TO-236AA. Contact your local National Semiconductor representative for delivery and ordering information.
Note 4: Tape and reel is the standard packaging method for TO-236.
TO-236AB (SOT-23) (Notes 3, 4)
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