NEC NDL5510C 1 000 to 1 600 nm optical fiber communications 50 mm ingaas avalanche photo diode module Datasheet

DATA SHEET
PHOTO DIODE
NDL5551P Series
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS
φ 50 µ m InGaAs AVALANCHE PHOTO DIODE MODULE
DESCRIPTION
NDL5551P Series is InGaAs avalanche photo diode modules with multimode fiber.
They are designed for
detectors of long wavelength transmission systems and cover the wavelength range between 1 000 and 1 600 nm.
FEATURES
•
Smaller dark current
ID = 5 nA
•
High quantum efficiency
η = 90 % @ λ = 1 300 nm, M = 1
•
High Speed response
fC = 1.2 G H z @M = 20
•
Detecting area size
φ 5 0 µm
•
Coaxial module with multimode fiber (GI-50/125)
•
NDL5551P1 and NDL5551P2 have a flange.
η = 77 % @ λ = 1 550 nm, M = 1
•
PACKAGE DIMENSIONS
in millimeters
NDL5551P1
Optical Fiber:
GI-50/125
Length: 1 m MIN.
Shrunk tube
φ 2.0
2
3
1
φ 2.0
18.0±0.1
30.0 MAX.
12.5 MIN.
φ 6.0 +0.0
–0.1
2–φ2.5
2
3
1
φ 2.0
12.0±0.1
LEAD CONNECTION
1 Anode (Negative)
2 Cathode (Positive)
3 Case
φ2.5
30.0 MAX.
12.5 MIN. 4.0±0.1
2–φ2.2
4.0±0.3
1
3.9±0.5
6.9±0.3
φ 6.0 +0.0
–0.1
7.0±0.3
1.5
2
3
3.0±0.3
φ 0.45
6.0
φ2.5
14.0±0.1
30.0 MAX.
φ 6.0+0.0
–0.1
12.5 MIN.
6.9±0.3
φ 2.5
Shrunk tube
2.5±0.1
0.5±0.1
Shrunk tube
+0.0
–0.1
NDL5551P2
Optical Fiber:
GI-50/125
Length: 1 m MIN.
7.0±0.15
NDL5551P
Optical Fiber:
GI-50/125
Length: 1 m MIN.
16.0±0.2
3
2
1
The information in this document is subject to change without notice.
Document No. P11103EJ2V0DS00 (2nd edition)
(Previous No. LD-2371)
Date Published March 1996 P
Printed in Japan
The mark • shows major revised points.
©
1994
NDL5551P Series
•
ORDERING INFORMATION
Part Number
Available Connector
NDL5551P
Without Connector
no flange
NDL5551PC
With FC-PC Connector
NDL5551PD
With SC-PC Connector
NDL5551P1
Without Connector
NDL5551P1C
With FC-PC Connector
NDL5551P1D
With SC-PC Connector
NDL5551P2
Without Connector
NDL5551P2C
With FC-PC Connector
NDL5551P2D
With SC-PC Connector
flat mount flange
vertical flange
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C)
Parameter
Symbol
Ratings
Unit
Forward Current
IF
10
mA
Reverse Current
IR
0.5
mA
Operating Case Temperature
TC
−40 to +85
°C
Storage Temperature
Tstg
−40 to +85
°C
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C)
Parameter
Reverse Breakdown Voltage
Symbol
V(BR)R
Conditions
ID = 100 µ A
MIN.
TYP.
MAX.
Unit
50
70
100
V
Temperature Coefficient of
Reverse Breakdown Voltage
δ
Dark Current
ID
VR = V(BR)R × 0.9
5
30
nA
Multiplied Dark Current
IDM
M = 2 to 10
1
5
nA
Terminal Capacitance
Ct
VR = V(BR)R × 0.9, f = 1 MHz
0.4
0.75
pF
Cut-off Frequency
fC
M = 10
*1
0.2
1
M = 20
Quantum Efficiency
Responsivity
Multiplication Factor
η
S
M
1.5
76
90
λ = 1 550 nm, M = 1
65
77
λ = 1 300 nm, M = 1
0.8
0.94
λ = 1 550 nm, M = 1
0.81
0.96
30
40
VR = V (@ ID = 1 µ A )
Excess Noise Exponent
x
λ = 1 300 nm, 1550 nm, IP0 = 1.0 µ A
Excess Noise Factor
F
M = 10, f = 35 MHz, B = 1 MHz
*1: δ =
2
V(BR)R < 25 °C + ∆T °C > −V(BR)R < 25 °C >
∆T °C ⋅ V(BR)R < 25 °C >
GHz
1.2
λ = 1 300 nm, M = 1
λ = 1 300 nm, IP0 = 1.0 µ A
%/°C
0.7
5
%
A/W
NDL5551P Series
•
WAVELENGTH DEPENDENCE
OF QUANTUM EFFICIENCY
Quantum Efficiency η (%)
100
TC = 25 ˚C
80
60
40
20
0
0.9
1.0
1.1 1.2 1.3 1.4 1.5
Wavelength λ ( µ m)
1.6
1.7
Responsivity (Relative Value) ∆ S/S (%)
TYPICAL CHARACTERISTICS
TEMPERATURE DEPENDENCE OF
RESPONSIVITY
10
λ = 1 300 nm
0
–10
–60 –40 –20
0
40 60
80 100
20
Operating Case Temperature TC (˚C)
DARK CURRENT vs.
REVERSE VOLTAGE
DARK CURRENT and PHOTO
CURRENT vs. REVERSE VOLTAGE
10–3
10–6
Dark Current ID (A)
λ = 1 300 nm
IP0 = 1.0 µ A
TC = 25 ˚C
10–4
Iph
–5
TC = 85 ˚C
10–8
TC = 65 ˚C
10–9
TC = 25 ˚C
TC = –20 ˚C
10–10
0
20
10–6
40
60
80
Reverse Voltage VR (V)
100
MULTIPLICATION FACTOR vs.
REVERSE VOLTAGE
10–7
103
Multiplication Factor M
Dark Current, Photo Current ID, lph (A)
10
10–7
10–8
ID
10–9
10–10
0
20
40
60
80
Reverse Voltage VR (V)
100
TC = 65 ˚C
102
TC = –20 ˚C
TC = 25 ˚C
101
TC = 85 ˚C
100
0
20
40
60
80
Reverse Voltage VR (V)
100
3
TEMPERATURE DEPENDENCE OF DARK
CURRENT and MULTIPLIED DARK CURRENT
10–6
FREQUENCY RESPONSE
λ = 1 300 nm
RL = 50 Ω
M=8
TC = 25 ˚C
λ = 1 300 nm
ID @ VR = 0.9 V(BR)R
10–7
IDM
10–8
10–9
Response (3 dB/div.)
Dark Current, Multiplied Dark Current ID, IDM (A)
NDL5551P Series
10–10
1
10
Multiplication Factor M
100
EXCESS NOISE FACTOR vs.
MULTIPLICATION FACTOR
Excess Noise Factor F
100
0.5
0.4
20
10
5
2
1
4
1 300 nm ( ), 1 550 nm ( )
f = 35 MHz, B = 1 MHz
50
1
2
5
10
20
Multiplication Factor M
50
100
Terminal Capacitance Ct (pF)
Cut-off Frequency fC (GHz)
TC = 25 ˚C
1
0.1
2.0
3.0
4.0
Frequency f (GHz)
5.0
TERMINAL CAPACITANCE vs.
REVERSE VOLTAGE
CUT-OFF FREQUENCY vs.
MULTIPLICATION FACTOR
10
1.0
0
10–11
–60 –40 –20 0
20
40
60
80 100
Operating Case Temperature TC (˚C)
2
1
0.5
0.2
0.1
1
2
5
10
20
50
Reverse Voltage VR (V)
100
NDL5551P Series
•
HANDLING PRECAUTION for PD/APD MODULE
The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the
ferrule and the module body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC
recommends the following handling precautions.
1. Do not make the fiber bend radius less than 30 mm (*3).
2. Do not bend the fiber within the 18 mm section from the module body (*4).
3. Do not stress the ferrule with a lateral force exceeding 500 g (*5).
30
m
m
fiber
in
m
)
(*3
ferrule (*5)
18 mm min. (*4)
(*1)
(*2)
module body
5
NDL5551P Series
•
InGaAs APD/PD FAMILY
Features
Packages
TO-18 type Can
APD
φ30 µ m
φ50 µ m
(for 2.5 Gb/s)
(for 2.5 Gb/s)
NDL5530
PIN-PD
φ50 µ m
φ80 µ m
φ50 µ m
φ80 µ m
Remarks
(for 2.5 Gb/s)
NDL5500
NDL5510
3 pins
*3,4
NDL5490L
TO-18 type Can
NDL5405L
3 pins
NDL5471RC
3 pins
NDL5471RD
RC: FC receptacle
with Micro Lens
Small Can
*3,4
NDL5490
NDL5531
φ5.6 µ m
Chip on Carrier
NDL5530C
NDL5520C
NDL5500C
NDL5510C
Receptacle Module
RD: SC receptacle
*2
Coaxial Module with
NDL5521P
NDL5551P
NDL5561P
MMF
NDL5521P1
NDL5551P1
NDL5561P1
NDL5521P2
NDL5551P2
NDL5561P2
NDL5553P
NDL5461P
P1, P2: With flange
*2
NDL5461P1
*2
NDL5461P2
*1
*1
NDL5553P1
*1
NDL5553P2
NDL5553PS
Coaxial Module with
SMF
*1
NDL5481P
*5
NDL5553P1S
*1
NDL5481P1
NDL5553P2S
*1
*5
NDL5481P2
*5
14-pin DIP Module
NDL5506P
∆T = 45 K (@ Ic = 1.1 A)
with TEC
NDL5506PS
PS: With SMF
6-pin BFY Module
NDL5522P
NDL5422P
with MMF
*1 For OTDR
*2 With GI-62.5/125
*3 Under development
*4 Internal pre-amplifier for 1Gb/s
*5 For analog application (optical CATV)
Remark Modules are available with FC-PC connector or optional SC-PC connector.
6
With Pre-AMP
NDL5551P Series
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
IEI-1205
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Semiconductor device package manual
IEI-1213
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
7
NDL5551P Series
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstance break the
hermetic seal.
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from
a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales
representative.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94. 11
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