NEC NDL7673PD 1310 nm optical catv/analog applications ingaasp mqw-dfb laser diode module Datasheet

DATA SHEET
LASER DIODE
NDL7673P
1310 nm OPTICAL CATV/ANALOG APPLICATIONS
InGaAsP STRAINED MQW-DFB LASER DIODE MODULE
DESCRIPTION
NDL7673P is a 1310 nm DFB (Distributed Feed-Back) laser diode, that has a newly developed Strained Multiple
Quantum Well (MQW) structure, butterfly package module with optical isolator. It is especially designed for a 16 mW
light source of CATV analog applications.
PACKAGE DIMENSIONS
FEATURES
in millimeters
15.24
CSO = ð55 dBc Max.
• High output power
Pf = 16.0 mW
• Long wavelength
OP = 1310 nm
• High isolation
40 dB
• Internal InGaAs monitor PD
2.54
0.51
7
1
8
14
4 – φ 2.67
15.0
0.9
6.0
CTB = ð60 dBc Max.
8.89 ±0.13 10 MIN.
• Low distortion
12.7 ±0.13
RIN = ð155 dB/Hz Max.
• Low noise
• Internal thermoelectric cooler
• Hermetically sealed 14 pin butterfly Package
20.83 ±0.13
26.04 ±0.13
• Singlemode fiber pigtail
Optical Fiber
SM-9/125,
Length = 2 m
Part Number
7.0
ORDERING INFORMATION
2.03
5.6
• High reliability
11.0 ±0.2
• Wide operating temperature range
Available Connector
NDL7673P
Without Connector
NDL7673PC
With FC-UPC Connector
NDL7673PD
With SC-UPC Connector
29.97 ±0.13
PIN CONNECTIONS
FUNCTION
PIN No.
1
2
3
4
5
6
7
PIN No.
FUNCTION
8
9
10
11
12
13
NC
NC
CASE GROUND
LD CATHODE
NC
LD ANODE,
CASE GROUND
COOLER CATHODE
COOLER ANODE
THERMISTOR
PD ANODE
PD CATHODE
CASE GROUND
NC
NC
14
TOP VIEW
THERMISTOR
Cooler
#1
#7
+
PD
LD
#8
–
#14
The information in this document is subject to change without notice.
Document No. P10478EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
©
1996
NDL7673P
ABSOLUTE MAXIMUM RATINGS (TC = 25 qC)
Parameter
Symbol
Ratings
Unit
Operating Case Temperature
TC
ð20 to +65
qC
Storage Temperature
Tstg
ð40 to +70
qC
Lead Soldering Temperature (10 s)
Tsld
260
qC
Optical Output Power
Pf
25
mW
Forward Current of LD
IF
150
mA
Reverse Voltage of LD
VR
2.0
V
Forward Current of PD
IF
10
mA
Reverse Voltage of PD
VR
20
V
Cooler Current
IC
1.0
A
Cooler Voltage
VC
2.0
V
ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25 qC, TC = ð20 qC to +65 qC)
Parameter
Symbol
Threshold Current
Ith
Forward Voltage
VF
Optical Output Power from Fiber
(Recommended Operating Point)
Conditions
IF = 30 mA
*1
Pop
TYP.
MAX.
Unit
20
35
mA
0.9
1.2
1.4
V
15.0
16.0
Spontaneous Emission Power from Fiber
Ps
Ib = Ith
Differential Efficiency from Fiber
Kd
Pf d Pop
0.25
Peak Emission Wavelength
OP
Pf = Pop
1290
1310
SMSR
Pf = Pop
30
35
f
Pf = Pop
900
Sub-mode Suppression Ratio
1 dB Bandwidth
Relative Intensity Noise
Composite Second Order Distortion
Composite Triple Beat Distortion
Carrier to Noise Ratio
Isolation
*2
RIN
*3
CSO
CTB
*3
*3
CNR
mW
50
PW
mW/mA
1330
nm
dB
MHz
Pf = Pop
ð155
dB/Hz
Pf = Pop
ð55
dBc
Pf = Pop
ð60
dBc
Pf = Pop
IS
*1 Recommended Pop value is supplied with each device.
*2 Conditions : Pf = Pop, CW
Measuring Bandwidth: 50 MHz to 600 MHz
Optical Reflection ð40 dB
*3 Conditions : Pf = Pop, Optical Modulation Index = 3.5 %/channel
79 channel unmodulated carriers (55.25 MHz to 547.25 MHz)
Optical Reflection ð40 dB, Optical Loss = 12 dB
2
MIN.
49
35
dBc
40
dB
NDL7673P
ELECTRO-OPTICAL CHARACTERISTICS
(Applicable to Monitor PD: TLD = 25 qC, TC = ð20 qC to +65 qC)
Parameter
Symbol
Conditions
Monitor Current
Im
VR = 5 V, Pf = Pop
Dark Current
ID
VR = 5 V
J
Tracking Error
*4
MIN.
TYP.
MAX.
Unit
PA
50
2
Im = const.
10
nA
0.5
dB
*4 Tracking Error : J
J = 10 log
Pf
Pop
(mW)
Pf
TLD = TC = 25 ˚C
TLD = 25 ˚C,
TC = –20 to +65 ˚C
Pop
Pf
0
Im
Im (@ Pf(25 ˚C) = Pop)
ELECTRO-OPTICAL CHARACTERISTICS
(Applicable to Thermistor and TE Cooler: TLD = 25 qC, TC = ð20 qC to +65 qC)
Parameter
Symbol
*5
Conditions
MIN.
TYP.
MAX.
Unit
9.5
10
10.5
k:
Thermistor Resistance
R
TLD = 25 qC
Cooler Current
IC
'T = 40 K
0.6
0.8
A
Cooler Voltage
VC
'T = 40 K
1.1
1.5
V
'T
Cooling Capacity
*6
IC = 0.8 A, Pf = Pop
40
K
*5 B Constant = 3400 r100 K
*6 'T = |TC - TLD|
DFB LASER FAMILY FOR CATV/ANALOG APPLICATIONS
Pop: Operating point power (min. value)
FEATURES
3 mW min.
14 PIN BFY MODULE
WITH SMF
NDL7680P
4 mW min.
NDL7650P
6 mW min.
NDL7660P
8 mW min.
NDL7670P
12 mW min.
NDL7672P
15 mW min.
NDL7673P
3
NDL7673P
REFERENCE
Document Name
4
Document No.
NEC semiconductor device reliability/quality control system
LEI-1201
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
NDL7673P
[MEMO]
5
NDL7673P
CAUTION
Within this module there exists GaAs (Gallium Arsenide) material which is a harmful
substance if ingested. Please do not under any circumstances break the hermetic seal.
NEC Corporation
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER
mW MAX
WAVELENGTH
nm
CLASS lllb LASER PRODUCT
SEMICONDUCTOR LASER
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
NEC Building, 7-1, Shiba 5-chome,
Minato-ku, Tokyo 108-01, Japan
Type number:
Manufactured:
Serial Number:
This product conforms to FDA
regulations as applicable
to standards 21 CFR Chapter 1.
Subchapter J.
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from
a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales
representative.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94. 11
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