ON NDP04N62ZG N-channel power mosfet 620 v, 1.8 Datasheet

NDF04N62Z, NDP04N62Z,
NDD04N62Z
N-Channel Power MOSFET
620 V, 1.8 W
Features
•
•
•
•
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Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and RoHS Compliant
VDSS
RDS(ON) (TYP) @ 2 A
620 V
1.8 Ω
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol
NDF
NDP
NDD
620
Unit
N−Channel
V
D (2)
Drain−to−Source Voltage
VDSS
Continuous Drain Current
RqJC
ID
4.4
(Note 2)
4.4
4.1
A
Continuous Drain Current
RqJC, TA = 100°C
ID
2.8
(Note 2)
2.8
2.6
A
G (1)
Pulsed Drain Current,
VGS @ 10V
IDM
18
(Note 2)
18
16
A
Power Dissipation RqJC
(Note 1)
PD
28
96
83
W
Gate−to−Source Voltage
VGS
±30
V
Single Pulse Avalanche
Energy, ID = 4.0 A
EAS
120
mJ
ESD (HBM) (JESD22−A114)
Vesd
3000
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 14)
VISO
Peak Diode Recovery
dv/dt
4.5 (Note 3)
V/ns
IS
4.0
A
TL
TPKG
300
260
°C
TJ, Tstg
−55 to 150
°C
Continuous Source Current
(Body Diode)
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for
10 s Package Body for 10 s
Operating Junction and
Storage Temperature Range
4500
−
−
S (3)
4
V
4
1 2
1
1
3
2
2
3
3
3
DPAK
TO−220FP TO−220AB
IPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 2
STYLE 1
STYLE 5
STYLE 2
1
2
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Limited by maximum junction temperature
3. ISD = 4.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 1
1
Publication Order Number:
NDF04N62Z/D
NDF04N62Z, NDP04N62Z, NDD04N62Z
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
NDP04N62Z
NDF04N62Z
NDD04N62Z
RqJC
1.3
4.4
1.5
°C/W
(Note 4) NDP04N62Z
(Note 4) NDF04N62Z
(Note 1) NDD04N62Z
(Note 4) NDD04N62Z−1
RqJA
50
50
38
80
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
VGS = 0 V, ID = 1 mA
BVDSS
620
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
25°C
VDS = 620 V, VGS = 0 V
Gate−to−Source Forward Leakage
V
0.6
IDSS
V/°C
1
125°C
mA
50
VGS = ±20 V
IGSS
Static Drain−to−Source
On−Resistance
VGS = 10 V, ID = 2.0 A
RDS(on)
Gate Threshold Voltage
VDS = VGS, ID = 50 mA
VGS(th)
Forward Transconductance
VDS = 15 V, ID = 2.0 A
gFS
3.3
S
Ciss
535
pF
±10
mA
2.0
W
4.5
V
ON CHARACTERISTICS (Note 5)
1.8
3.0
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Coss
62
Reverse Transfer Capacitance
Crss
14
Total Gate Charge
Qg
19
Qgs
3.9
Qgd
10
Plateau Voltage
VGP
6.4
V
Gate Resistance
Rg
4.7
W
td(on)
12
ns
tr
13
td(off)
25
tf
14
Gate−to−Source Charge
VDD = 310 V, ID = 4.0 A,
VGS = 10 V
Gate−to−Drain (“Miller”) Charge
nC
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 310 V, ID = 4.0 A,
VGS = 10 V, RG = 5 Ω
Fall Time
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 4.0 A, VGS = 0 V
VSD
Reverse Recovery Time
VGS = 0 V, VDD = 30 V
IS = 4.0 A, di/dt = 100 A/ms
trr
285
ns
Qrr
1.3
mC
Reverse Recovery Charge
4. Insertion mounted
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
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2
1.6
V
NDF04N62Z, NDP04N62Z, NDD04N62Z
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
8
15 V
TJ = 25°C
6
10 V
7V
VDS ≥ 30 V
ID, DRAIN CURRENT (A)
8
6.8 V
6.6 V
4
6.4 V
6.2 V
6.0 V
2
6
4
TJ = 150°C
TJ = 25°C
2
5.8 V
5.6 V
0
5
10
15
20
0
25
4
5
7
6
8
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 2 A
TJ = 25°C
3
2.5
2
1.5
5
6
7
8
9
10
VGS (V)
3
TJ = 25°C
2.5
2
VGS = 10 V
1.5
1
0.5
1
1.5
2
2.5
3
3.5
4
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.6
1.15
ID = 2 A
VGS = 10 V
ID = 1 mA
BVDSS, NORMALIZED
BREAKDOWN VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
3
VGS, GATE−TO−SOURCE VOLTAGE (V)
3.5
1
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
2
1.4
0.8
0.2
−50
−25
0
25
50
75
100
125
150
1.1
1.05
1.0
0.95
0.9
−50
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. BVDSS Variation with Temperature
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3
150
NDF04N62Z, NDP04N62Z, NDD04N62Z
TYPICAL CHARACTERISTICS
1200
10,000
VGS = 0 V
VGS = 0 V
TJ = 25°C
TJ = 150°C
C, CAPACITANCE (pF)
IDSS, LEAKAGE (nA)
1000
1000
TJ = 100°C
100
800
Ciss
600
400
Coss
200
10
0
100
200
300
500
400
150
Figure 8. Capacitance Variation
VDD = 310 V
ID = 4 A
VGS = 10 V
300
100
t, TIME (ns)
VDS
200
Qgs
Qgd
VGS
5
VDS = 310 V
TJ = 25°C
ID = 4 A
2
4
6
8
12
10
14
16
18
200
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QT
10
td(off)
tr
tf
td(on)
10
100
0
20
1
1
10
100
Qg, TOTAL GATE CHARGE (nC)
RG, GATE RESISTANCE (W)
Figure 9. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
4
100
VGS = 0 V
TJ = 25°C
ID, DRAIN CURRENT (A)
IS, SOURCE CURRENT (A)
100
Figure 7. Drain−to−Source Leakage Current
vs. Voltage
400
0
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
15
0
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
20
VGS, GATE−TO−SOURCE VOLTAGE (V)
0
600
Crss
3
2
1
0
0.4
0.5
0.6
0.7
0.8
0.9
10
1 ms
100 ms 10 ms
dc
1
VGS ≤ 30 V
Single Pulse
TC = 25°C
0.1
0.01
1.0
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
1
10
100
1000
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Diode Forward Voltage vs. Current
Figure 12. Maximum Rated Forward Biased
Safe Operating Area for NDF04N62Z
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4
NDF04N62Z, NDP04N62Z, NDD04N62Z
TYPICAL CHARACTERISTICS
10
R(t) (C/W)
1.0
0.1
0.01
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
SINGLE PULSE
RqJC = 4.4°C/W
Steady State
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
PULSE TIME (s)
Figure 13. Thermal Impedance for NDF04N62Z
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
100
1000
NDF04N62Z, NDP04N62Z, NDD04N62Z
ORDERING INFORMATION
Package
Shipping†
NDF04N62ZG
TO−220FP
(Pb−Free)
50 Units / Rail
NDP04N62ZG
TO−220AB
(Pb−Free)
50 Units / Rail
(In Development)
NDD04N62Z−1G
IPAK
(Pb−Free)
75 Units / Rail
(In Development)
NDD04N62ZT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
(In Development)
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
NDF04N62ZG
or
NDP04N62ZG
AYWW
Gate
Source
1 2 3
Gate Drain Source
Drain
A
Y
WW
G
= Location Code
= Year
= Work Week
= Pb−Free Package
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6
4
Drain
YWW
4N
62ZG
YWW
4N
62ZG
4
Drain
2
1 Drain 3
Gate Source
NDF04N62Z, NDP04N62Z, NDD04N62Z
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
−T−
−B−
F
SEATING
PLANE
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
S
Q
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
TO−220AB
CASE 221A−09
ISSUE AE
−T−
B
F
T
SEATING
PLANE
C
S
A
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
4
Q
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
Y
M
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
U
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
N
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7
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
NDF04N62Z, NDP04N62Z, NDD04N62Z
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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8
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
NDF04N62Z, NDP04N62Z, NDD04N62Z
PACKAGE DIMENSIONS
DPAK
CASE 369AA−01
ISSUE A
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
H
3
U
F
J
L
D
M
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
−−−
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
2 PL
0.13 (0.005)
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
−−−
0.035 0.050
0.155
−−−
T
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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