ON NDP05N50Z N-channel power mosfet 500 v, 1.25 â ¦ Datasheet

NDF05N50Z, NDP05N50Z,
NDD05N50Z
N-Channel Power MOSFET
500 V, 1.25 W
Features
•
•
•
•
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Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
VDSS
RDS(on) (TYP) @ 2.2 A
500 V
1.25 W
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Symbol
NDF
VDSS
NDP
NDD
500
Unit
Continuous Drain Current RqJC
ID
5
(Note 1)
5
4.7
A
Continuous Drain Current
RqJC, TA = 100°C
ID
3.2
(Note 1)
3.2
3
A
Pulsed Drain Current, VGS @
10 V
IDM
20
(Note 1)
20
19
A
Power Dissipation RqJC
PD
28
96
83
W
Gate−to−Source Voltage
VGS
±30
V
Single Pulse Avalanche Energy,
ID = 5.0 A
EAS
130
mJ
ESD (HBM) (JESD22−A114)
Vesd
3000
V
RMS Isolation Voltage (t =
0.3 sec., R.H. ≤ 30%, TA =
25°C) (Figure 15)
VISO
Peak Diode Recovery
dv/dt
4.5 (Note 2)
V/ns
Continuous Source Current
(Body Diode)
IS
5
A
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for 10 s
Package Body for 10 s
TL
TPKG
300
260
°C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
December, 2009 − Rev. 0
D (2)
G (1)
4500
S (3)
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. IS = 4.4 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
© Semiconductor Components Industries, LLC, 2009
N−Channel
V
1
4
4
1 2
1
1
3
2
2
3
3
3
DPAK
TO−220FP TO−220AB
IPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 2
STYLE 1
STYLE 5
STYLE 2
1
2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NDF05N50Z/D
NDF05N50Z, NDP05N50Z, NDD05N50Z
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
Symbol
Value
Unit
NDP05N50Z
NDF05N50Z
NDD05N50Z
RqJC
1.3
4.4
1.5
°C/W
(Note 3) NDP05N50Z
(Note 3) NDF05N50Z
(Note 4) NDD05N50Z
(Note 3) NDD05N50Z−1
RqJA
50
50
38
80
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
BVDSS
VGS = 0 V, ID = 1 mA
500
DBVDSS/
DTJ
Reference to 25°C,
ID = 1 mA
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
Gate−to−Source Forward Leakage
IDSS
VDS = 500 V, VGS = 0 V
IGSS
VGS = ±20 V
Static Drain−to−Source
On−Resistance
RDS(on)
VGS = 10 V, ID = 2.2 A
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 50 mA
gFS
VDS = 15 V, ID = 2.5 A
V
0.6
V/°C
25°C
1
150°C
50
mA
±10
mA
1.5
W
4.5
V
ON CHARACTERISTICS (Note 5)
Forward Transconductance
1.25
3.0
3.5
S
530
pF
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
15
Total Gate Charge
Qg
18.5
Gate−to−Source Charge
Qgs
Gate−to−Drain (“Miller”) Charge
Qgd
Plateau Voltage
VGP
6.5
V
Gate Resistance
Rg
4.5
W
11
ns
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 250 V, ID = 5 A,
VGS = 10 V
68
nC
4
10
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VDD = 250 V, ID = 5 A,
VGS = 10 V, RG = 5 W
tf
15
24
14
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
VSD
IS = 5 A, VGS = 0 V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
VGS = 0 V, VDD = 30 V
IS = 5 A, di/dt = 100 A/ms
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
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2
1.6
V
255
ns
1.25
mC
NDF05N50Z, NDP05N50Z, NDD05N50Z
10.0
10.0
9.0
9.0
VGS = 8 V to 10 V
8.0
7.0 V
7.0
6.5 V
6.0
5.0
4.0
6.0 V
3.0
2.0
5.5 V
1.0
0.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
5
10
15
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
8.0
7.0
6.0
5.0
TJ = 25°C
4.0
TJ = 150°C
3.0
TJ = −55°C
2.0
1.0
5.0 V
0
VDS = 25 V
25
0.0
3
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
2.50
ID = 2.2 A
TJ = 25°C
2.25
2.00
1.75
1.50
1.25
1.00
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
9.5 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
2.500
VGS = 10 V
TJ = 25°C
2.250
2.000
1.750
1.500
1.250
1.000
0.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10.0
TJ = 150°C
ID = 2.2 A
VGS = 10 V
2.00
IDSS, LEAKAGE (mA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.0
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
2.75
2.25
0.5
ID, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate−to−Source
Voltage
2.50
10
1.75
1.50
1.25
1.00
0.75
1.0
0.50
0.25
−50
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
150
0.1
0
Figure 5. On−Resistance Variation with
Temperature
50
100 150 200 250 300 350 400 450 500
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NDF05N50Z, NDP05N50Z, NDD05N50Z
TYPICAL CHARACTERISTICS
TJ = 25°C
VGS = 0 V
f = 1 MHz
C, CAPACITANCE (pF)
1000
900
800
700
600
Ciss
500
400
300
200
100
0
Crss
0
5
Coss
10 15 20 25 30 35 40 45
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
50
Figure 7. Capacitance Variation
IS, SOURCE CURRENT (A)
td(off)
tr
tf
td(on)
10
1
200
VGS
QGS
QGD
150
100
VDS = 250 V
ID = 5 A
TJ = 25°C
0
2
4
6
8
10 12 14 16
Qg, TOTAL GATE CHARGE (nC)
18
50
0
20
100
100
1.0
250
VDS
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
VDD = 250 V
ID = 5 A
VGS = 10 V
10
RG, GATE RESISTANCE (W)
10
TJ = 150°C
1.0
125°C
0.1
100
0.3
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
100
10
VGS v 30 V
SINGLE PULSE
TC = 25°C
100 ms
1 ms
10 ms
0.01
0.1
10 ms
dc
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
25°C
−55°C
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
ID, DRAIN CURRENT (A)
t, TIME (ns)
1000
300
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1100
VGS, GATE−TO−SOURCE VOLTAGE (V)
1200
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area NDD05N50Z
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4
1000
1.2
NDF05N50Z, NDP05N50Z, NDD05N50Z
TYPICAL CHARACTERISTICS
10
R(t) (C/W)
50% (DUTY CYCLE)
1
0.1
20%
10%
5.0%
2.0%
1.0%
SINGLE PULSE
0.01
1E−06
RqJC = 4.4°C/W
Steady State
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
PULSE TIME (s)
Figure 12. Thermal Impedance (Junction−to−Case) for NDF05N50Z
10
R(t) (C/W)
1 50% (DUTY CYCLE)
20%
10%
0.1
5.0%
2.0%
1.0%
0.01
1E−06
RqJC = 1.5°C/W
Steady State
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
PULSE TIME (s)
Figure 13. Thermal Impedance (Junction−to−Case) for NDD05N50Z
R(t) (C/W)
100
10 50% (DUTY CYCLE)
20%
10%
5.0%
1
2.0%
1.0%
0.1
0.01
1E−06
RqJA = 38°C/W
Steady State
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 14. Thermal Impedance (Junction−to−Ambient) for NDD05N50Z
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5
1E+02
1E+03
NDF05N50Z, NDP05N50Z, NDD05N50Z
LEADS
HEATSINK
0.110″ MIN
Figure 15. Mounting Position for Isolation Test
Measurement made between leads and heatsink with all leads shorted together.
ORDERING INFORMATION
Package
Shipping†
NDF05N50ZG
TO−220FP
(Pb−Free)
50 Units / Rail
(In Development)
NDP05N50ZG
TO−220AB
(Pb−Free)
50 Units / Rail
(In Development)
NDD05N50Z−1G
IPAK
(Pb−Free)
75 Units / Rail
NDD05N50ZT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
NDF05N50ZG
or
NDP05N50ZG
AYWW
Gate
Source
1 2 3
Gate Drain Source
Drain
A
Y
WW
G
= Location Code
= Year
= Work Week
= Pb−Free Package
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6
4
Drain
YWW
5N
50ZG
YWW
5N
50ZG
4
Drain
2
1 Drain 3
Gate Source
NDF05N50Z, NDP05N50Z, NDD05N50Z
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
Y
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
TO−220
CASE 221A−09
ISSUE AF
−T−
B
F
T
SEATING
PLANE
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
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7
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
NDF05N50Z, NDP05N50Z, NDD05N50Z
PACKAGE DIMENSIONS
DPAK
CASE 369AA−01
ISSUE A
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
H
3
U
F
J
L
D
0.13 (0.005)
M
T
6.20
0.244
2.58
0.101
3.0
0.118
5.80
0.228
1.6
0.063
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
−−−
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
2 PL
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
−−−
0.035 0.050
0.155
−−−
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
IPAK
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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8
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
NDF05N50Z, NDP05N50Z, NDD05N50Z
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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