May 1994 NDP510A / NDP510AE / NDP510B / NDP510BE NDB510A / NDB510AE / NDB510B / NDB510BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 15 and 13A, 100V. RDS(ON) = 0.12 and 0.15Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted NDP510A NDP510AE NDB510A NDB510AE Symbol Parameter NDP510B NDP510BE NDB510B NDB510BE Units VDSS Drain-Source Voltage 100 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) 100 V VGSS Gate-Source Voltage - Continuous ±20 V - Nonrepetitive (tP < 50 µs) ±40 V ID Drain Current - Continuous - Pulsed PD 15 13 A 60 52 A Total Power Dissipation @ TC = 25°C 75 W Derate above 25°C 0.5 W/°C -65 to 175 °C 275 °C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds © 1997 Fairchild Semiconductor Corporation NDP510.SAM Electrical Characteristics (T Symbol Parameter C = 25°C unless otherwise noted) Conditions Type Min Typ Max Units 65 mJ 15 A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) EAS Single Pulse Drain-Source Avalanche Energy VDD = 25 V, ID = 15 A IAR Maximum Drain-Source Avalanche Current NDP510AE NDP510BE NDB510AE NDB510BE OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ALL IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V ALL IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse 100 V 250 µA 1 mA ALL 100 nA VGS = -20 V, VDS = 0 V ALL -100 nA VDS = VGS, ID = 250 µA ALL TJ = 125°C ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 10 V, ID = 7.5 A VGS = 10 V, ID = 6.5 A ID(on) gFS On-State Drain Current Forward Transconductance TJ = 125°C 2 3 4 V 1.4 2.3 3.6 V 0.088 0.12 Ω 0.16 0.24 Ω 0.15 Ω 0.3 Ω NDP510A NDP510AE NDB510A TJ = 125°C NDB510AE NDP510B NDP510BE NDB510B TJ = 125°C NDB510BE VGS = 10 V, VDS = 10 V NDP510A NDP510AE NDB510A NDB510AE 15 A NDP510B NDP510BE NDB510B NDB510BE 13 A VDS = 10 V, ID = 7.5 A ALL 6 VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL 740 900 pF ALL 160 180 pF ALL 40 50 pF 8.6 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance NDP510.SAM Electrical Characteristics (T Symbol Parameter C = 25°C unless otherwise noted) Conditions Type Min Typ Max Units SWITCHING CHARACTERISTICS (Note 2) tD(ON) Turn - On Delay Time tr Turn - On Rise Time tD(OFF) VDD = 50 V, ID = 15 A, VGS = 10 V, RGEN = 24 Ω ALL 10 20 nS ALL 63 100 nS Turn - Off Delay Time ALL 49 80 nS tf Turn - Off Fall Time ALL 45 75 nS Qg Total Gate Charge ALL 22.5 30 nC Qgs Gate-Source Charge ALL 4.5 nC Qgd Gate-Drain Charge ALL 10.5 nC VDS = 80 V, ID = 15 A, VGS = 10V DRAIN-SOURCE DIODE CHARACTERISTICS IS ISM VSD Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.5 A trr Reverse Recovery Time Irr Reverse Recovery Current VGS = 0 V, IS = 15 A, dIS/dt = 100 A/µs (Note 2) NDP510A NDP510AE NDB510A NDB510AE 15 A NDP510B NDP510BE NDB510B NDB510BE 13 A NDP510A NDP510AE NDB510A NDB510AE 60 A NDP510B NDP510BE NDB510B NDB510BE 52 A ALL 0.89 1.3 V 0.85 1.2 V ALL 98 140 ns ALL 6.8 10 A TJ = 125°C THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case ALL 2 °C/W RθJA Thermal Resistance, Junction-to-Ambient ALL 62.5 °C/W Notes: 1. NDP510A/510B and NDB510A/510B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP510.SAM Typical Electrical Characteristics 2 12 10 8.0 R DS(on) , NORMALIZED I D , DRAIN-SOURCE CURRENT (A) V GS = 20V 30 7.0 20 6.0 10 5.0 DRAIN-SOURCE ON-RESISTANCE 40 0 0 2 4 6 VDS , DRAIN-SOURCE VOLTAGE (V) V GS = 5V 6.0 7.0 1.6 8.0 10 12 20 1.2 0.8 8 0 Figure 1. On-Region Characteristics. 10 20 I D , DRAIN CURRENT (A) 2.5 V V GS = 10V R DS(on), NORMALIZED 2 1.5 1 -25 0 25 50 75 100 125 T J , JUNCTION TEMPERATURE (°C) 150 DRAIN-SOURCE ON-RESISTANCE R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 7.5A = 10V GS TJ = 125°C 2 1.5 25°C 1 -55°C 0.5 0 175 Figure 3. On-Resistance Variation with Temperature. 0 5 10 15 20 25 30 I D , DRAIN CURRENT (A) 35 40 45 Figure 4. On-Resistance Variation with Drain Current and Temperature. 1.2 T V DS = 10V J = -55°C 25 125 Vth , NORMALIZED 20 15 D 10 5 0 2 3 4 5 6 7 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 8 GATE-SOURCE THRESHOLD VOLTAGE (V) 25 I , DRAIN CURRENT (A) 40 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2.5 0.5 -50 30 V DS = V GS I D = 250µA 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) 150 175 J Figure 6. Gate Threshold Variation with Temperature. NDP510.SAM Typical Electrical Characteristics (continued) 15 10 I D = 250µA I , REVERSE DRAIN CURRENT (A) 1.04 1.02 1 0.98 0.96 -50 -25 0 TJ 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 TJ = 125°C 25°C 1 -55°C 0.1 0.01 0.2 175 Figure 7. Breakdown Voltage Variation with Temperature. V GS , GATE-SOURCE VOLTAGE (V) 500 C oss 200 100 f = 1 MHz C rss V GS = 0 V V DS = 20V I D = 15A 50 80 15 10 5 0 0.2 0.5 1 2 5 10 20 VDS , DRAIN TO SOURCE VOLTAGE (V) 50 Figure 9. Capacitance Characteristics. 0 10 t on t d(on) V OUT R GEN tf 90% Output, Vout 10% 10% 90% DUT G Input, Vin S Figure 11. Switching Test Circuit. 40 t d(off) 90% D 30 t off tr RL V IN 20 Q g , GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. VDD VGS 1.2 20 C iss 1000 30 0.1 0.4 0.6 0.8 1 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 1600 CAPACITANCE (pF) VGS = 0V 5 S BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE (V) 1.06 Inverted 50% 50% 10% Pulse Width Figure 12. Switching Waveforms. NDP510.SAM Typical Electrical Characteristics (continued) V DS = 10V VGS = 10V T J = -55°C 12 L tp + VDD - 25°C t p is adjusted to reach the desired peak inductive current, I L . tp 9 125°C 6 3 BV DSS IL VDD g FS , TRANSCONDUCTANCE (SIEMENS) 15 0 0 4 8 12 ID , DRAIN CURRENT (A) 16 20 Figure 13. Transconductance Variation with Drain Current and Temperature. 100 50 I D, DRAIN CURRENT (A) R ( DS ON im )L it 10 10 20 1m 10 10 5 DC V GS = 20V 2 Figure 14. Unclamped Inductive Load Circuit and Waveforms. 0µ µs s s ms SINGLE PULSE T C = 25°C 1 0.5 1 2 3 V DS 5 10 20 50 , DRAIN-SOURCE VOLTAGE (V) 100 150 Figure 15. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.5 0.3 R θJC (t) = r(t) * RθJC R = 2.0 °C/W θJC 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 0.02 0.03 0.01 0.02 0.01 0.01 t1 t2 TJ - T C = P * R θJC (t) Duty Cycle, D = t1 /t2 Single Pulse 0.1 1 10 100 1000 t 1 ,TIME (ms) Figure 16. Transient Thermal Response Curve. NDP510.SAM