Fairchild NDP7060L N-channel logic level enhancement mode field effect transistor Datasheet

June 1996
NDP7060L / NDB7060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
75A, 60V. RDS(ON) = 0.015Ω @ VGS = 5V
Low drive requirements allowing operation directly from logic
drivers. VGS(TH) < 2.0V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
NDP7060L
60
V
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
60
V
VGSS
Gate-Source Voltage - Continuous
± 20
V
ID
Drain Current
- Nonrepetitive (tP < 50 µs)
PD
75
- Pulsed
225
Total Power Dissipation @ TC = 25°C
Operating and Storage Temperature Range
© 1997 Fairchild Semiconductor Corporation
Units
± 40
- Continuous
Derate above 25°C
TJ,TSTG
NDB7060L
A
150
W
1
W/°C
-65 to 175
°C
NDP7060L Rev. B2 / NDB7060L Rev. C
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
550
mJ
75
A
250
µA
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS
Single Pulse Drain-Source Avalanche
Energy
IAR
Maximum Drain-Source Avalanche Current
VDD = 25 V, ID = 75 A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
60
V
1
mA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
V
TJ = 125°C
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
TJ = 125°C
RDS(ON)
Static Drain-Source On-Resistance
1
1.3
2
0.65
0.8
1.5
0.01
0.015
0.016
0.024
VGS = 5 V, ID = 37.5 A
TJ = 125°C
ID(on)
On-State Drain Current
VGS = 5 V, VDS = 10 V
75
gFS
Forward Transconductance
VDS = 10 V, ID = 37.5 A
15
Ω
A
67
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
4200
4000
pF
1100
1600
pF
310
800
pF
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 75 A,
VGS = 5 V, RGEN = 10Ω
RGS = 10 Ω
VDS = 48 V,
ID = 75 A, VGS = 5 V
23
40
nS
460
600
nS
100
150
nS
270
400
nS
86
115
nC
13
nC
62
nC
NDP7060L Rev. B2 / NDB7060L Rev. C
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
75
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
225
A
VSD
Drain-Source Diode Forward Voltage
V
VGS = 0 V, IS = 37.5 A (Note 1)
TJ = 125°C
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
VGS = 0 V, IF = 60A,
dIF/dt = 100 A/µs
0.92
1.3
0.85
1.2
108
150
ns
4.6
10
A
1
°C/W
62.5
°C/W
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP7060L Rev. B2 / NDB7060L Rev. C
Typical Electrical Characteristics
120
2
6.0
4.0
5.0
4.5
3.5
R DS(on), NORMALIZED
100
80
3.0
60
40
2.5
20
0
0.5
1
1.5
2
V DS , DRAIN-SOURCE VOLTAGE (V)
2.5
4.0
1.2
4.5
5.0
1
6.0
10
0.8
20
40
60
80
I D , DRAIN CURRENT (A)
100
120
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2
V GS
I D = 40A
1.75
R DS(on), NORMALIZED
V GS = 10V
1.5
1.25
1
0.75
0.5
-50
-25
0
25
50
75
100
125
TJ , JUNCTION TEMPERATURE (°C)
150
DRAIN-SOURCE ON-RESISTANCE
R DS(ON), NORMALIZED
3.5
1.4
0
2
DRAIN-SOURCE ON-RESISTANCE
V GS = 3.0V
1.6
3
Figure 1. On-Region Characteristics.
= 5V
1.8
TJ = 125°C
1.6
1.4
1.2
25°C
1
0.8
-55°C
0.6
175
0
Figure 3. On-Resistance Variation
with Temperature.
20
40
60
80
ID , DRAIN CURRENT (A)
100
120
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1 .4
V DS = 10V
T = -55°C
J
V GS(th) , NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
80
125°C
60
25°C
40
D
, DRAIN CURRENT (A)
1.8
0.6
0
I
DRAIN-SOURCE ON-RESISTANCE
ID , DRAIN-SOURCE CURRENT (A)
VGS = 10V
20
0
0
1
V
GS
2
3
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
V DS = VGS
1 .2
I D = 250µA
1
0 .8
0 .6
0 .4
-50
-25
0
25
50
75
100
125
TJ , JUNCTION TEMPERATURE (°C)
150
175
Figure 6. Gate Threshold Variation with
Temperature.
NDP7060L Rev. B2 / NDB7060L Rev. C
Typical Electrical Characteristics (continued)
80
50
I D = 250µA
I , REVERSE DRAIN CURRENT (A)
1.1
1.05
1
0.95
0.9
-50
-25
0
T
10
T J = 125°C
25°C
1
-55°C
0.1
0.01
J
25
50
75
100
125
, JUNCTION TEMPERATURE (°C)
150
175
0.001
0.2
0.4
V
Figure 7. Breakdown Voltage Variation with
Temperature.
SD
0.6
0.8
1
1.2
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
10
7000
Ciss
I D = 75A
2000
Coss
1000
f = 1 MHz
V GS = 0V
500
Crss
300
V DS = 12V
48V
VGS , GATE-SOURCE VOLTAGE (V)
5000
CAPACITANCE (pF)
V GS = 0V
S
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.15
8
24V
6
4
2
200
0
1
2
3
V
DS
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
30
50
Figure 9. Capacitance Characteristics.
0
40
t on
t d(on)
VGEN
t d(off)
tf
90%
90%
V OUT
VO U T
10%
R GEN
RGS
10%
INVERTED
DUT
G
90%
V IN
S
160
to f f
tr
RL
D
120
Figure 10. Gate Charge Characteristics.
VDD
VIN
80
Q g , GATE CHARGE (nC)
50%
50%
10%
PULSE W IDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP7060L Rev. B2 / NDB7060L Rev. C
Typical Electrical Characteristics (continued)
300
V DS =10V
200
TJ = -55°C
R
100
80
60
ID , DRAIN CURRENT (A)
25°C
125°C
40
(O
DS
N)
Lim
it
10µ
s
100
µs
50
1m
10m
20
100
10
DC
VGS = 10V
SINGLE PULSE
R θJC = 1 o C/W
T C = 25 °C
5
20
FS
, TRANSCONDUCTANCE (SIEMENS)
100
g
2
s
s
ms
1
0
0
10
20
30
40
50
60
1
2
3
5
10
20
30
60
100
V DS , DRAIN-SOURCE VOLTAGE (V))
I D , DRAIN CURRENT (A)
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Figure 14. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.3
R θJC (t) = r(t) * RθJC
R
θJC = 1.0 °C/W
0.2
0.2
0.1
0.1
P(pk)
0.05
0.05
t1
0.02
0.03
0.02
0.01
Single Pulse
0.01
0.01
0.05
t2
TJ - T C = P * R θ
JC (t)
Duty Cycle, D = t1 /t2
0.1
0.5
1
5
t 1 ,TIME (ms)
10
50
100
500
1000
Figure 15. Transient Thermal Response Curve.
NDP7060L Rev. B2 / NDB7060L Rev. C
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